Freescale Semiconductor
Data Sheet: Technical Data
K20 Sub-Family Data Sheet
Document Number: K20P121M100SF2
Rev. 7, 02/2013
K20P121M100SF2
Supports the following:
MK20DX256ZVMC10,
MK20DN512ZVMC10
Features
• Operating Characteristics
– Voltage range: 1.71 to 3.6 V
– Flash write voltage range: 1.71 to 3.6 V
– Temperature range (ambient): -40 to 105°C
• Performance
– Up to 100 MHz ARM Cortex-M4 core with DSP
instructions delivering 1.25 Dhrystone MIPS per
MHz
• Memories and memory interfaces
– Up to 512 KB program flash memory on nonFlexMemory devices
– Up to 256 KB program flash memory on
FlexMemory devices
– Up to 256 KB FlexNVM on FlexMemory devices
– 4 KB FlexRAM on FlexMemory devices
– Up to 128 KB RAM
– Serial programming interface (EzPort)
– FlexBus external bus interface
• Clocks
– 3 to 32 MHz crystal oscillator
– 32 kHz crystal oscillator
– Multi-purpose clock generator
• System peripherals
– Multiple low-power modes to provide power
optimization based on application requirements
– Memory protection unit with multi-master
protection
– 16-channel DMA controller, supporting up to 63
request sources
– External watchdog monitor
– Software watchdog
– Low-leakage wakeup unit
• Human-machine interface
– Low-power hardware touch sensor interface (TSI)
– General-purpose input/output
• Analog modules
– Two 16-bit SAR ADCs
– Programmable gain amplifier (PGA) (up to x64)
integrated into each ADC
– Two 12-bit DACs
– Three analog comparators (CMP) containing a 6-bit
DAC and programmable reference input
– Voltage reference
• Timers
– Programmable delay block
– Eight-channel motor control/general purpose/PWM
timer
– Two 2-channel quadrature decoder/general purpose
timers
– Periodic interrupt timers
– 16-bit low-power timer
– Carrier modulator transmitter
– Real-time clock
• Communication interfaces
– USB full-/low-speed On-the-Go controller with onchip transceiver
– Two Controller Area Network (CAN) modules
– Three SPI modules
– Two I2C modules
– Six UART modules
– Secure Digital host controller (SDHC)
– I2S module
• Security and integrity modules
– Hardware CRC module to support fast cyclic
redundancy checks
– 128-bit unique identification (ID) number per chip
Freescale reserves the right to change the detail specifications as may be
required to permit improvements in the design of its products.
© 2011–2013 Freescale Semiconductor, Inc.
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
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Freescale Semiconductor, Inc.
Table of Contents
1 Ordering parts...........................................................................5
6 Peripheral operating requirements and behaviors....................24
1.1 Determining valid orderable parts......................................5
6.1 Core modules....................................................................24
2 Part identification......................................................................5
6.1.1
Debug trace timing specifications.......................24
2.1 Description.........................................................................5
6.1.2
JTAG electricals..................................................24
2.2 Format...............................................................................5
6.2 System modules................................................................27
2.3 Fields.................................................................................5
6.3 Clock modules...................................................................27
2.4 Example............................................................................6
6.3.1
MCG specifications.............................................27
3 Terminology and guidelines......................................................6
6.3.2
Oscillator electrical specifications.......................29
3.1 Definition: Operating requirement......................................6
6.3.3
32 kHz Oscillator Electrical Characteristics........32
3.2 Definition: Operating behavior...........................................7
6.4 Memories and memory interfaces.....................................32
3.3 Definition: Attribute............................................................7
6.4.1
Flash electrical specifications.............................32
3.4 Definition: Rating...............................................................8
6.4.2
EzPort Switching Specifications.........................37
3.5 Result of exceeding a rating..............................................8
6.4.3
Flexbus Switching Specifications........................38
3.6 Relationship between ratings and operating
requirements......................................................................8
6.5 Security and integrity modules..........................................41
6.6 Analog...............................................................................41
3.7 Guidelines for ratings and operating requirements............9
6.6.1
ADC electrical specifications..............................41
3.8 Definition: Typical value.....................................................9
6.6.2
CMP and 6-bit DAC electrical specifications......49
3.9 Typical value conditions....................................................10
6.6.3
12-bit DAC electrical characteristics...................51
4 Ratings......................................................................................11
6.6.4
Voltage reference electrical specifications..........54
4.1 Thermal handling ratings...................................................11
6.7 Timers................................................................................55
4.2 Moisture handling ratings..................................................11
6.8 Communication interfaces.................................................55
4.3 ESD handling ratings.........................................................11
6.8.1
USB electrical specifications...............................55
4.4 Voltage and current operating ratings...............................11
6.8.2
USB DCD electrical specifications......................56
5 General.....................................................................................12
6.8.3
USB VREG electrical specifications...................56
5.1 AC electrical characteristics..............................................12
6.8.4
CAN switching specifications..............................57
5.2 Nonswitching electrical specifications...............................12
6.8.5
DSPI switching specifications (limited voltage
5.2.1
Voltage and current operating requirements......13
5.2.2
LVD and POR operating requirements...............14
5.2.3
Voltage and current operating behaviors............14
5.2.4
Power mode transition operating behaviors.......16
6.8.7
Inter-Integrated Circuit Interface (I2C) timing..... 60
5.2.5
Power consumption operating behaviors............17
6.8.8
UART switching specifications............................61
5.2.6
EMC radiated emissions operating behaviors....20
6.8.9
SDHC specifications...........................................61
5.2.7
Designing with radiated emissions in mind.........21
6.8.10
I2S switching specifications................................62
5.2.8
Capacitance attributes........................................21
5.3 Switching specifications.....................................................21
range).................................................................57
6.8.6
DSPI switching specifications (full voltage
range).................................................................58
6.9 Human-machine interfaces (HMI)......................................65
6.9.1
TSI electrical specifications................................65
5.3.1
Device clock specifications.................................21
7 Dimensions...............................................................................66
5.3.2
General switching specifications.........................21
7.1 Obtaining package dimensions.........................................66
5.4 Thermal specifications.......................................................22
8 Pinout........................................................................................66
5.4.1
Thermal operating requirements.........................22
8.1 K20 Signal Multiplexing and Pin Assignments..................66
5.4.2
Thermal attributes...............................................23
8.2 K20 Pinouts.......................................................................71
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
Freescale Semiconductor, Inc.
3
9 Revision History........................................................................72
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
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Freescale Semiconductor, Inc.
Ordering parts
1 Ordering parts
1.1 Determining valid orderable parts
Valid orderable part numbers are provided on the web. To determine the orderable part
numbers for this device, go to freescale.com and perform a part number search for the
following device numbers: PK20 and MK20 .
2 Part identification
2.1 Description
Part numbers for the chip have fields that identify the specific part. You can use the
values of these fields to determine the specific part you have received.
2.2 Format
Part numbers for this device have the following format:
Q K## A M FFF R T PP CC N
2.3 Fields
This table lists the possible values for each field in the part number (not all combinations
are valid):
Field
Description
Values
Q
Qualification status
• M = Fully qualified, general market flow
• P = Prequalification
K##
Kinetis family
• K20
A
Key attribute
• D = Cortex-M4 w/ DSP
• F = Cortex-M4 w/ DSP and FPU
M
Flash memory type
• N = Program flash only
• X = Program flash and FlexMemory
Table continues on the next page...
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
Freescale Semiconductor, Inc.
5
Terminology and guidelines
Field
Description
Values
FFF
Program flash memory size
•
•
•
•
•
•
•
32 = 32 KB
64 = 64 KB
128 = 128 KB
256 = 256 KB
512 = 512 KB
1M0 = 1 MB
2M0 = 2 MB
R
Silicon revision
• Z = Initial
• (Blank) = Main
• A = Revision after main
T
Temperature range (°C)
• V = –40 to 105
• C = –40 to 85
PP
Package identifier
•
•
•
•
•
•
•
•
•
•
•
FM = 32 QFN (5 mm x 5 mm)
FT = 48 QFN (7 mm x 7 mm)
LF = 48 LQFP (7 mm x 7 mm)
LH = 64 LQFP (10 mm x 10 mm)
MP = 64 MAPBGA (5 mm x 5 mm)
LK = 80 LQFP (12 mm x 12 mm)
LL = 100 LQFP (14 mm x 14 mm)
MC = 121 MAPBGA (8 mm x 8 mm)
LQ = 144 LQFP (20 mm x 20 mm)
MD = 144 MAPBGA (13 mm x 13 mm)
MJ = 256 MAPBGA (17 mm x 17 mm)
CC
Maximum CPU frequency (MHz)
•
•
•
•
•
5 = 50 MHz
7 = 72 MHz
10 = 100 MHz
12 = 120 MHz
15 = 150 MHz
N
Packaging type
• R = Tape and reel
• (Blank) = Trays
2.4 Example
This is an example part number:
MK20DN512ZVMD10
3 Terminology and guidelines
3.1 Definition: Operating requirement
An operating requirement is a specified value or range of values for a technical
characteristic that you must guarantee during operation to avoid incorrect operation and
possibly decreasing the useful life of the chip.
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Terminology and guidelines
3.1.1 Example
This is an example of an operating requirement:
Symbol
VDD
Description
1.0 V core supply
voltage
Min.
0.9
Max.
1.1
Unit
V
3.2 Definition: Operating behavior
An operating behavior is a specified value or range of values for a technical
characteristic that are guaranteed during operation if you meet the operating requirements
and any other specified conditions.
3.2.1 Example
This is an example of an operating behavior:
Symbol
IWP
Description
Min.
Digital I/O weak pullup/ 10
pulldown current
Max.
130
Unit
µA
3.3 Definition: Attribute
An attribute is a specified value or range of values for a technical characteristic that are
guaranteed, regardless of whether you meet the operating requirements.
3.3.1 Example
This is an example of an attribute:
Symbol
CIN_D
Description
Input capacitance:
digital pins
Min.
—
Max.
7
Unit
pF
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
Freescale Semiconductor, Inc.
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Terminology and guidelines
3.4 Definition: Rating
A rating is a minimum or maximum value of a technical characteristic that, if exceeded,
may cause permanent chip failure:
• Operating ratings apply during operation of the chip.
• Handling ratings apply when the chip is not powered.
3.4.1 Example
This is an example of an operating rating:
Symbol
VDD
Description
1.0 V core supply
voltage
Min.
–0.3
Max.
Unit
1.2
V
3.5 Result of exceeding a rating
Failures in time (ppm)
40
30
The likelihood of permanent chip failure increases rapidly as
soon as a characteristic begins to exceed one of its operating ratings.
20
10
0
Operating rating
Measured characteristic
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Terminology and guidelines
3.6 Relationship between ratings and operating requirements
e
Op
ing
rat
r
(
ng
ati
in.
t (m
)
n.
mi
rat
e
Op
ing
)
t (m
e
ir
qu
re
n
me
ing
rat
e
Op
ax
.)
e
ir
qu
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n
me
ing
rat
e
Op
ng
ati
ax
(m
.)
r
Fatal range
Degraded operating range
Normal operating range
Degraded operating range
Fatal range
Expected permanent failure
- No permanent failure
- Possible decreased life
- Possible incorrect operation
- No permanent failure
- Correct operation
- No permanent failure
- Possible decreased life
- Possible incorrect operation
Expected permanent failure
–∞
∞
Operating (power on)
g
lin
nd
Ha
in
rat
n.)
mi
g(
nd
Ha
g
lin
ing
rat
ax
(m
.)
Fatal range
Handling range
Fatal range
Expected permanent failure
No permanent failure
Expected permanent failure
–∞
Handling (power off)
∞
3.7 Guidelines for ratings and operating requirements
Follow these guidelines for ratings and operating requirements:
• Never exceed any of the chip’s ratings.
• During normal operation, don’t exceed any of the chip’s operating requirements.
• If you must exceed an operating requirement at times other than during normal
operation (for example, during power sequencing), limit the duration as much as
possible.
3.8 Definition: Typical value
A typical value is a specified value for a technical characteristic that:
• Lies within the range of values specified by the operating behavior
• Given the typical manufacturing process, is representative of that characteristic
during operation when you meet the typical-value conditions or other specified
conditions
Typical values are provided as design guidelines and are neither tested nor guaranteed.
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
Freescale Semiconductor, Inc.
9
Terminology and guidelines
3.8.1 Example 1
This is an example of an operating behavior that includes a typical value:
Symbol
Description
IWP
Digital I/O weak
pullup/pulldown
current
Min.
10
Typ.
70
Max.
130
Unit
µA
3.8.2 Example 2
This is an example of a chart that shows typical values for various voltage and
temperature conditions:
5000
4500
4000
TJ
IDD_STOP (μA)
3500
150 °C
3000
105 °C
2500
25 °C
2000
–40 °C
1500
1000
500
0
0.90
0.95
1.00
1.05
1.10
VDD (V)
3.9 Typical value conditions
Typical values assume you meet the following conditions (or other conditions as
specified):
Symbol
Description
Value
Unit
TA
Ambient temperature
25
°C
VDD
3.3 V supply voltage
3.3
V
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
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Freescale Semiconductor, Inc.
Ratings
4 Ratings
4.1 Thermal handling ratings
Symbol
Description
Min.
Max.
Unit
Notes
TSTG
Storage temperature
–55
150
°C
1
TSDR
Solder temperature, lead-free
—
260
°C
2
Solder temperature, leaded
—
245
1. Determined according to JEDEC Standard JESD22-A103, High Temperature Storage Life.
2. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic
Solid State Surface Mount Devices.
4.2 Moisture handling ratings
Symbol
MSL
Description
Moisture sensitivity level
Min.
Max.
Unit
Notes
—
3
—
1
1. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic
Solid State Surface Mount Devices.
4.3 ESD handling ratings
Symbol
Description
Min.
Max.
Unit
Notes
VHBM
Electrostatic discharge voltage, human body model
-2000
+2000
V
1
VCDM
Electrostatic discharge voltage, charged-device model
-500
+500
V
2
Latch-up current at ambient temperature of 105°C
-100
+100
mA
3
ILAT
1. Determined according to JEDEC Standard JESD22-A114, Electrostatic Discharge (ESD) Sensitivity Testing Human Body
Model (HBM).
2. Determined according to JEDEC Standard JESD22-C101, Field-Induced Charged-Device Model Test Method for
Electrostatic-Discharge-Withstand Thresholds of Microelectronic Components.
3. Determined according to JEDEC Standard JESD78, IC Latch-Up Test.
4.4 Voltage and current operating ratings
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
Freescale Semiconductor, Inc.
11
General
Symbol
Description
Min.
Max.
Unit
VDD
Digital supply voltage
–0.3
3.8
V
IDD
Digital supply current
—
185
mA
VDIO
Digital input voltage (except RESET, EXTAL, and XTAL)
–0.3
5.5
V
VAIO
Analog1,
RESET, EXTAL, and XTAL input voltage
–0.3
VDD + 0.3
V
Maximum current single pin limit (applies to all digital pins)
–25
25
mA
ID
VDDA
Analog supply voltage
VDD – 0.3
VDD + 0.3
V
VUSB_DP
USB_DP input voltage
–0.3
3.63
V
VUSB_DM
USB_DM input voltage
–0.3
3.63
V
VREGIN
USB regulator input
–0.3
6.0
V
RTC battery supply voltage
–0.3
3.8
V
VBAT
1. Analog pins are defined as pins that do not have an associated general purpose I/O port function.
5 General
5.1 AC electrical characteristics
Unless otherwise specified, propagation delays are measured from the 50% to the 50%
point, and rise and fall times are measured at the 20% and 80% points, as shown in the
following figure.
Figure 1. Input signal measurement reference
All digital I/O switching characteristics assume:
1. output pins
• have CL=30pF loads,
• are configured for fast slew rate (PORTx_PCRn[SRE]=0), and
• are configured for high drive strength (PORTx_PCRn[DSE]=1)
2. input pins
• have their passive filter disabled (PORTx_PCRn[PFE]=0)
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General
5.2 Nonswitching electrical specifications
5.2.1 Voltage and current operating requirements
Table 1. Voltage and current operating requirements
Symbol
Description
Min.
Max.
Unit
VDD
Supply voltage
1.71
3.6
V
VDDA
Analog supply voltage
1.71
3.6
V
VDD – VDDA VDD-to-VDDA differential voltage
–0.1
0.1
V
VSS – VSSA VSS-to-VSSA differential voltage
–0.1
0.1
V
1.71
3.6
V
• 2.7 V ≤ VDD ≤ 3.6 V
0.7 × VDD
—
V
• 1.7 V ≤ VDD ≤ 2.7 V
0.75 × VDD
—
V
• 2.7 V ≤ VDD ≤ 3.6 V
—
0.35 × VDD
V
• 1.7 V ≤ VDD ≤ 2.7 V
—
0.3 × VDD
V
0.06 × VDD
—
V
-5
—
mA
VBAT
VIH
VIL
RTC battery supply voltage
Input high voltage
Input low voltage
VHYS
Input hysteresis
IICDIO
Digital pin negative DC injection current — single pin
• VIN < VSS-0.3V
IICAIO
IICcont
1
Analog2, EXTAL, and XTAL pin DC injection current —
single pin
3
mA
• VIN < VSS-0.3V (Negative current injection)
-5
—
• VIN > VDD+0.3V (Positive current injection)
—
+5
-25
—
—
+25
Contiguous pin DC injection current —regional limit,
includes sum of negative injection currents or sum of
positive injection currents of 16 contiguous pins
• Negative current injection
• Positive current injection
mA
VODPU
Open drain pullup voltage level
VDD
VDD
V
VRAM
VDD voltage required to retain RAM
1.2
—
V
VPOR_VBAT
—
V
VRFVBAT
Notes
VBAT voltage required to retain the VBAT register file
4
1. All 5 V tolerant digital I/O pins are internally clamped to VSS through an ESD protection diode. There is no diode
connection to VDD. If VIN is less than VDIO_MIN, a current limiting resistor is required. The negative DC injection current
limiting resistor is calculated as R=(VDIO_MIN-VIN)/|IICDIO|.
2. Analog pins are defined as pins that do not have an associated general purpose I/O port function. Additionally, EXTAL and
XTAL are analog pins.
3. All analog pins are internally clamped to VSS and VDD through ESD protection diodes. If VIN is less than VAIO_MIN or greater
than VAIO_MAX, a current limiting resistor is required. The negative DC injection current limiting resistor is calculated as
R=(VAIO_MIN-VIN)/|IICAIO|. The positive injection current limiting resistor is calculated as R=(VIN-VAIO_MAX)/|IICAIO|. Select the
larger of these two calculated resistances if the pin is exposed to positive and negative injection currents.
4. Open drain outputs must be pulled to VDD.
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
Freescale Semiconductor, Inc.
13
General
5.2.2 LVD and POR operating requirements
Table 2. VDD supply LVD and POR operating requirements
Symbol
Description
Min.
Typ.
Max.
Unit
VPOR
Falling VDD POR detect voltage
0.8
1.1
1.5
V
VLVDH
Falling low-voltage detect threshold — high
range (LVDV=01)
2.48
2.56
2.64
V
Low-voltage warning thresholds — high range
1
VLVW1H
• Level 1 falling (LVWV=00)
2.62
2.70
2.78
V
VLVW2H
• Level 2 falling (LVWV=01)
2.72
2.80
2.88
V
VLVW3H
• Level 3 falling (LVWV=10)
2.82
2.90
2.98
V
VLVW4H
• Level 4 falling (LVWV=11)
2.92
3.00
3.08
V
—
±80
—
mV
1.54
1.60
1.66
V
VHYSH
Low-voltage inhibit reset/recover hysteresis —
high range
VLVDL
Falling low-voltage detect threshold — low range
(LVDV=00)
Low-voltage warning thresholds — low range
1
VLVW1L
• Level 1 falling (LVWV=00)
1.74
1.80
1.86
V
VLVW2L
• Level 2 falling (LVWV=01)
1.84
1.90
1.96
V
VLVW3L
• Level 3 falling (LVWV=10)
1.94
2.00
2.06
V
VLVW4L
• Level 4 falling (LVWV=11)
2.04
2.10
2.16
V
—
±60
—
mV
VHYSL
Low-voltage inhibit reset/recover hysteresis —
low range
Notes
VBG
Bandgap voltage reference
0.97
1.00
1.03
V
tLPO
Internal low power oscillator period — factory
trimmed
900
1000
1100
μs
1. Rising thresholds are falling threshold + hysteresis voltage
Table 3. VBAT power operating requirements
Symbol
Description
VPOR_VBAT Falling VBAT supply POR detect voltage
Min.
Typ.
Max.
Unit
0.8
1.1
1.5
V
Notes
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General
5.2.3 Voltage and current operating behaviors
Table 4. Voltage and current operating behaviors
Symbol
VOH
Min.
Typ.1
Max.
Unit
• 2.7 V ≤ VDD ≤ 3.6 V, IOH = -9mA
VDD – 0.5
—
—
V
• 1.71 V ≤ VDD ≤ 2.7 V, IOH = -3mA
VDD – 0.5
—
—
V
• 2.7 V ≤ VDD ≤ 3.6 V, IOH = -2mA
VDD – 0.5
—
—
V
• 1.71 V ≤ VDD ≤ 2.7 V, IOH = -0.6mA
VDD – 0.5
—
—
V
—
—
100
mA
Description
Notes
Output high voltage — high drive strength
Output high voltage — low drive strength
IOHT
Output high current total for all ports
VOL
Output low voltage — high drive strength
2
• 2.7 V ≤ VDD ≤ 3.6 V, IOL = 9mA
—
—
0.5
V
• 1.71 V ≤ VDD ≤ 2.7 V, IOL = 3mA
—
—
0.5
V
• 2.7 V ≤ VDD ≤ 3.6 V, IOL = 2mA
—
—
0.5
V
• 1.71 V ≤ VDD ≤ 2.7 V, IOL = 0.6mA
—
—
0.5
V
—
—
100
mA
Output low voltage — low drive strength
IOLT
Output low current total for all ports
IINA
Input leakage current, analog pins and digital
pins configured as analog inputs
3, 4
• VSS ≤ VIN ≤ VDD
• All pins except EXTAL32, XTAL32,
EXTAL, XTAL
• EXTAL (PTA18) and XTAL (PTA19)
• EXTAL32, XTAL32
IIND
—
0.002
0.5
μA
—
0.004
1.5
μA
—
0.075
10
μA
Input leakage current, digital pins
4, 5
• VSS ≤ VIN ≤ VIL
• All digital pins
—
0.002
0.5
μA
—
0.002
0.5
μA
—
0.004
1
μA
• VIN = VDD
• All digital pins except PTD7
• PTD7
IIND
Input leakage current, digital pins
4, 5, 6
• VIL < VIN < VDD
• VDD = 3.6 V
—
18
26
μA
• VDD = 3.0 V
—
12
49
μA
• VDD = 2.5 V
—
8
13
μA
• VDD = 1.7 V
—
3
6
μA
Table continues on the next page...
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
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15
General
Table 4. Voltage and current operating behaviors (continued)
Symbol
IIND
Description
Min.
Max.
Unit
Input leakage current, digital pins
• VDD < VIN < 5.5 V
ZIND
Typ.1
Notes
4, 5
—
1
50
μA
Input impedance examples, digital pins
4, 7
• VDD = 3.6 V
—
—
48
kΩ
• VDD = 3.0 V
—
—
55
kΩ
• VDD = 2.5 V
—
—
57
kΩ
• VDD = 1.7 V
—
—
85
kΩ
RPU
Internal pullup resistors
20
35
50
kΩ
8
RPD
Internal pulldown resistors
20
35
50
kΩ
9
1.
2.
3.
4.
5.
6.
7.
Typical values characterized at 25°C and VDD = 3.6 V unless otherwise noted.
Open drain outputs must be pulled to VDD.
Analog pins are defined as pins that do not have an associated general purpose I/O port function.
Digital pins have an associated GPIO port function and have 5V tolerant inputs, except EXTAL and XTAL.
Internal pull-up/pull-down resistors disabled.
Characterized, not tested in production.
Examples calculated using VIL relation, VDD, and max IIND: ZIND=VIL/IIND. This is the impedance needed to pull a high
signal to a level below VIL due to leakage when VIL < VIN < VDD. These examples assume signal source low = 0 V.
8. Measured at VDD supply voltage = VDD min and Vinput = VSS
9. Measured at VDD supply voltage = VDD min and Vinput = VDD
I IND
Digital input
Source
+
–
Z IND
5.2.4 Power mode transition operating behaviors
All specifications except tPOR, and VLLSx→RUN recovery times in the following table
assume this clock configuration:
•
•
•
•
•
CPU and system clocks = 100 MHz
Bus clock = 50 MHz
FlexBus clock = 50 MHz
Flash clock = 25 MHz
MCG mode: FEI
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
16
Freescale Semiconductor, Inc.
General
Table 5. Power mode transition operating behaviors
Symbol
tPOR
Description
Min.
Max.
After a POR event, amount of time from the point VDD
reaches 1.71 V to execution of the first instruction
across the operating temperature range of the chip.
• VDD slew rate ≥ 5.7 kV/s
• VDD slew rate < 5.7 kV/s
• VLLS1 → RUN
• VLLS2 → RUN
• VLLS3 → RUN
• LLS → RUN
• VLPS → RUN
• STOP → RUN
Unit
Notes
μs
1
—
300
—
1.7 V / (VDD
slew rate)
—
134
μs
—
96
μs
—
96
μs
—
6.2
μs
—
5.9
μs
—
5.9
μs
1. Normal boot (FTFL_OPT[LPBOOT]=1)
5.2.5 Power consumption operating behaviors
Table 6. Power consumption operating behaviors
Symbol
IDDA
IDD_RUN
Description
Analog supply current
Typ.
Max.
Unit
Notes
—
—
See note
mA
1
Run mode current — all peripheral clocks
disabled, code executing from flash
• @ 1.8V
• @ 3.0V
IDD_RUN
Min.
2
—
45
70
mA
—
47
72
mA
Run mode current — all peripheral clocks
enabled, code executing from flash
• @ 1.8V
3, 4
—
61
85
mA
—
63
71
mA
—
72
87
mA
• @ 3.0V
• @ 25°C
• @ 125°C
IDD_WAIT
Wait mode high frequency current at 3.0 V — all
peripheral clocks disabled
—
35
—
mA
2
IDD_WAIT
Wait mode reduced frequency current at 3.0 V —
all peripheral clocks disabled
—
15
—
mA
5
IDD_VLPR
Very-low-power run mode current at 3.0 V — all
peripheral clocks disabled
—
N/A
—
mA
6
Table continues on the next page...
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
Freescale Semiconductor, Inc.
17
General
Table 6. Power consumption operating behaviors (continued)
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
IDD_VLPR
Very-low-power run mode current at 3.0 V — all
peripheral clocks enabled
—
N/A
—
mA
7
IDD_VLPW
Very-low-power wait mode current at 3.0 V — all
peripheral clocks disabled
—
N/A
—
mA
8
IDD_STOP
Stop mode current at 3.0 V
• @ –40 to 25°C
—
0.59
1.4
mA
• @ 70°C
—
2.26
7.9
mA
• @ 105°C
—
5.94
19.2
mA
• @ –40 to 25°C
—
93
435
μA
• @ 70°C
—
520
2000
μA
• @ 105°C
—
1350
4000
μA
IDD_VLPS
IDD_LLS
IDD_VLLS3
IDD_VLLS2
IDD_VLLS1
IDD_VBAT
Very-low-power stop mode current at 3.0 V
Low leakage stop mode current at 3.0 V
9
• @ –40 to 25°C
—
4.8
20
μA
• @ 70°C
—
28
68
μA
• @ 105°C
—
126
270
μA
Very low-leakage stop mode 3 current at 3.0 V
9
• @ –40 to 25°C
—
3.1
8.9
μA
• @ 70°C
—
17
35
μA
• @ 105°C
—
82
148
μA
• @ –40 to 25°C
—
2.2
5.4
μA
• @ 70°C
—
7.1
12.5
μA
• @ 105°C
—
41
125
μA
• @ –40 to 25°C
—
2.1
7.6
μA
• @ 70°C
—
6.2
13.5
μA
• @ 105°C
—
30
46
μA
—
0.33
0.39
μA
—
0.60
0.78
μA
—
1.97
2.9
μA
Very low-leakage stop mode 2 current at 3.0 V
Very low-leakage stop mode 1 current at 3.0 V
Average current with RTC and 32kHz disabled at
3.0 V
• @ –40 to 25°C
• @ 70°C
• @ 105°C
Table continues on the next page...
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
18
Freescale Semiconductor, Inc.
General
Table 6. Power consumption operating behaviors (continued)
Symbol
Description
Min.
IDD_VBAT
Average current when CPU is not accessing RTC
registers
Typ.
Max.
Unit
Notes
10
• @ 1.8V
• @ –40 to 25°C
• @ 70°C
• @ 105°C
—
0.71
0.81
μA
—
1.01
1.3
μA
—
2.82
4.3
μA
—
0.84
0.94
μA
—
1.17
1.5
μA
—
3.16
4.6
μA
• @ 3.0V
• @ –40 to 25°C
• @ 70°C
• @ 105°C
1. The analog supply current is the sum of the active or disabled current for each of the analog modules on the device. See
each module's specification for its supply current.
2. 100MHz core and system clock, 50MHz bus and FlexBus clock, and 25MHz flash clock . MCG configured for FEI mode.
All peripheral clocks disabled.
3. 100MHz core and system clock, 50MHz bus and FlexBus clock, and 25MHz flash clock. MCG configured for FEI mode. All
peripheral clocks enabled.
4. Max values are measured with CPU executing DSP instructions.
5. 25MHz core and system clock, 25MHz bus clock, and 12.5MHz FlexBus and flash clock. MCG configured for FEI mode.
6. 2 MHz core, system, FlexBus, and bus clock and 1MHz flash clock. MCG configured for BLPE mode. All peripheral clocks
disabled. Code executing from flash.
7. 2 MHz core, system, FlexBus, and bus clock and 1MHz flash clock. MCG configured for BLPE mode. All peripheral clocks
enabled but peripherals are not in active operation. Code executing from flash.
8. 2 MHz core, system, FlexBus, and bus clock and 1MHz flash clock. MCG configured for BLPE mode. All peripheral clocks
disabled.
9. Data reflects devices with 128 KB of RAM. For devices with 64 KB of RAM, power consumption is reduced by 2 μA.
10. Includes 32kHz oscillator current and RTC operation.
5.2.5.1
Diagram: Typical IDD_RUN operating behavior
The following data was measured under these conditions:
• MCG in FBE mode for 50 MHz and lower frequencies. MCG in FEE mode at greater
than 50 MHz frequencies.
• USB regulator disabled
• No GPIOs toggled
• Code execution from flash with cache enabled
• For the ALLOFF curve, all peripheral clocks are disabled except FTFL
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
Freescale Semiconductor, Inc.
19
General
Figure 2. Run mode supply current vs. core frequency
5.2.6 EMC radiated emissions operating behaviors
Table 7. EMC radiated emissions operating behaviors as measured on 144LQFP and
144MAPBGA packages
Symbol
Description
Frequency
band (MHz)
144LQFP
144MAPBGA
Unit
Notes
1,2
VRE1
Radiated emissions voltage, band 1
0.15–50
23
12
dBμV
VRE2
Radiated emissions voltage, band 2
50–150
27
24
dBμV
VRE3
Radiated emissions voltage, band 3
150–500
28
27
dBμV
VRE4
Radiated emissions voltage, band 4
500–1000
14
11
dBμV
IEC level
0.15–1000
K
K
—
VRE_IEC
2, 3
1. Determined according to IEC Standard 61967-1, Integrated Circuits - Measurement of Electromagnetic Emissions, 150
kHz to 1 GHz Part 1: General Conditions and Definitions and IEC Standard 61967-2, Integrated Circuits - Measurement of
Electromagnetic Emissions, 150 kHz to 1 GHz Part 2: Measurement of Radiated Emissions—TEM Cell and Wideband
TEM Cell Method. Measurements were made while the microcontroller was running basic application code. The reported
emission level is the value of the maximum measured emission, rounded up to the next whole number, from among the
measured orientations in each frequency range.
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
20
Freescale Semiconductor, Inc.
General
2. VDD = 3.3 V, TA = 25 °C, fOSC = 12 MHz (crystal), fSYS = 96 MHz, fBUS = 48MHz
3. Specified according to Annex D of IEC Standard 61967-2, Measurement of Radiated Emissions—TEM Cell and Wideband
TEM Cell Method
5.2.7 Designing with radiated emissions in mind
To find application notes that provide guidance on designing your system to minimize
interference from radiated emissions:
1. Go to www.freescale.com.
2. Perform a keyword search for “EMC design.”
5.2.8 Capacitance attributes
Table 8. Capacitance attributes
Symbol
Description
Min.
Max.
Unit
CIN_A
Input capacitance: analog pins
—
7
pF
CIN_D
Input capacitance: digital pins
—
7
pF
5.3 Switching specifications
5.3.1 Device clock specifications
Table 9. Device clock specifications
Symbol
Description
Min.
Max.
Unit
System and core clock
—
100
MHz
System and core clock when Full Speed USB in
operation
20
—
MHz
Bus clock
—
50
MHz
FlexBus clock
—
50
MHz
fFLASH
Flash clock
—
25
MHz
fLPTMR
LPTMR clock
—
25
MHz
Notes
Normal run mode
fSYS
fSYS_USB
fBUS
FB_CLK
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
Freescale Semiconductor, Inc.
21
General
5.3.2 General switching specifications
These general purpose specifications apply to all signals configured for GPIO, UART,
CAN, CMT, and I2C signals.
Table 10. General switching specifications
Symbol
Description
Min.
Max.
Unit
Notes
GPIO pin interrupt pulse width (digital glitch filter
disabled) — Synchronous path
1.5
—
Bus clock
cycles
1, 2
GPIO pin interrupt pulse width (digital glitch filter
disabled, analog filter enabled) — Asynchronous path
100
—
ns
3
GPIO pin interrupt pulse width (digital glitch filter
disabled, analog filter disabled) — Asynchronous path
16
—
ns
3
External reset pulse width (digital glitch filter disabled)
100
—
ns
3
2
—
Bus clock
cycles
Mode select (EZP_CS) hold time after reset
deassertion
Port rise and fall time (high drive strength)
4
• Slew disabled
• 1.71 ≤ VDD ≤ 2.7V
—
12
ns
• 2.7 ≤ VDD ≤ 3.6V
—
6
ns
• 1.71 ≤ VDD ≤ 2.7V
—
36
ns
• 2.7 ≤ VDD ≤ 3.6V
—
24
ns
• Slew enabled
Port rise and fall time (low drive strength)
5
• Slew disabled
• 1.71 ≤ VDD ≤ 2.7V
—
12
ns
• 2.7 ≤ VDD ≤ 3.6V
—
6
ns
• 1.71 ≤ VDD ≤ 2.7V
—
36
ns
• 2.7 ≤ VDD ≤ 3.6V
—
24
ns
• Slew enabled
1. This is the minimum pulse width that is guaranteed to pass through the pin synchronization circuitry. Shorter pulses may or
may not be recognized. In Stop, VLPS, LLS, and VLLSx modes, the synchronizer is bypassed so shorter pulses can be
recognized in that case.
2. The greater synchronous and asynchronous timing must be met.
3. This is the minimum pulse width that is guaranteed to be recognized as a pin interrupt request in Stop, VLPS, LLS, and
VLLSx modes.
4. 75 pF load
5. 15 pF load
5.4 Thermal specifications
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
22
Freescale Semiconductor, Inc.
General
5.4.1 Thermal operating requirements
Table 11. Thermal operating requirements
Symbol
Description
Min.
Max.
Unit
TJ
Die junction temperature
–40
125
°C
TA
Ambient temperature
–40
°C
5.4.2 Thermal attributes
Board type
Symbol
Description
Unit
Notes
Single-layer (1s)
RθJA
Thermal
65
resistance, junction
to ambient (natural
convection)
°C/W
1
Four-layer (2s2p)
RθJA
Thermal
36
resistance, junction
to ambient (natural
convection)
°C/W
1
Single-layer (1s)
RθJMA
Thermal
52
resistance, junction
to ambient (200 ft./
min. air speed)
°C/W
1
Four-layer (2s2p)
RθJMA
Thermal
31
resistance, junction
to ambient (200 ft./
min. air speed)
°C/W
1
—
RθJB
Thermal
17
resistance, junction
to board
°C/W
2
—
RθJC
Thermal
13
resistance, junction
to case
°C/W
3
—
ΨJT
Thermal
3
characterization
parameter, junction
to package top
outside center
(natural
convection)
°C/W
4
1.
2.
3.
4.
121 MAPBGA
Determined according to JEDEC Standard JESD51-2, Integrated Circuits Thermal Test Method Environmental
Conditions—Natural Convection (Still Air), or EIA/JEDEC Standard JESD51-6, Integrated Circuit Thermal Test Method
Environmental Conditions—Forced Convection (Moving Air).
Determined according to JEDEC Standard JESD51-8, Integrated Circuit Thermal Test Method Environmental
Conditions—Junction-to-Board.
Determined according to Method 1012.1 of MIL-STD 883, Test Method Standard, Microcircuits, with the cold plate
temperature used for the case temperature. The value includes the thermal resistance of the interface material
between the top of the package and the cold plate.
Determined according to JEDEC Standard JESD51-2, Integrated Circuits Thermal Test Method Environmental
Conditions—Natural Convection (Still Air).
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
Freescale Semiconductor, Inc.
23
Peripheral operating requirements and behaviors
6 Peripheral operating requirements and behaviors
6.1 Core modules
6.1.1 Debug trace timing specifications
Table 12. Debug trace operating behaviors
Symbol
Description
Min.
Max.
Unit
Tcyc
Clock period
Frequency dependent
MHz
Twl
Low pulse width
2
—
ns
Twh
High pulse width
2
—
ns
Tr
Clock and data rise time
—
3
ns
Tf
Clock and data fall time
—
3
ns
Ts
Data setup
3
—
ns
Th
Data hold
2
—
ns
Figure 3. TRACE_CLKOUT specifications
TRACE_CLKOUT
Ts
Th
Ts
Th
TRACE_D[3:0]
Figure 4. Trace data specifications
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
24
Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors
6.1.2 JTAG electricals
Table 13. JTAG limited voltage range electricals
Symbol
J1
Description
Min.
Max.
Unit
Operating voltage
2.7
3.6
V
TCLK frequency of operation
MHz
• Boundary Scan
0
10
• JTAG and CJTAG
0
25
• Serial Wire Debug
0
50
1/J1
—
ns
• Boundary Scan
50
—
ns
• JTAG and CJTAG
20
—
ns
• Serial Wire Debug
10
—
ns
J4
TCLK rise and fall times
—
3
ns
J5
Boundary scan input data setup time to TCLK rise
20
—
ns
J6
Boundary scan input data hold time after TCLK rise
0
—
ns
J7
TCLK low to boundary scan output data valid
—
25
ns
J8
TCLK low to boundary scan output high-Z
—
25
ns
J9
TMS, TDI input data setup time to TCLK rise
8
—
ns
J10
TMS, TDI input data hold time after TCLK rise
1
—
ns
J11
TCLK low to TDO data valid
—
17
ns
J12
TCLK low to TDO high-Z
—
17
ns
J13
TRST assert time
100
—
ns
J14
TRST setup time (negation) to TCLK high
8
—
ns
J2
TCLK cycle period
J3
TCLK clock pulse width
Table 14. JTAG full voltage range electricals
Symbol
J1
Description
Min.
Max.
Unit
Operating voltage
1.71
3.6
V
TCLK frequency of operation
• Boundary Scan
0
10
• JTAG and CJTAG
0
20
• Serial Wire Debug
0
40
1/J1
—
ns
• Boundary Scan
50
—
ns
• JTAG and CJTAG
25
—
ns
• Serial Wire Debug
12.5
—
ns
—
3
ns
J2
TCLK cycle period
J3
TCLK clock pulse width
J4
MHz
TCLK rise and fall times
Table continues on the next page...
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
Freescale Semiconductor, Inc.
25
Peripheral operating requirements and behaviors
Table 14. JTAG full voltage range electricals (continued)
Symbol
Description
Min.
Max.
Unit
J5
Boundary scan input data setup time to TCLK rise
20
—
ns
J6
Boundary scan input data hold time after TCLK rise
0
—
ns
J7
TCLK low to boundary scan output data valid
—
25
ns
J8
TCLK low to boundary scan output high-Z
—
25
ns
J9
TMS, TDI input data setup time to TCLK rise
8
—
ns
J10
TMS, TDI input data hold time after TCLK rise
1.4
—
ns
J11
TCLK low to TDO data valid
—
22.1
ns
J12
TCLK low to TDO high-Z
J13
TRST assert time
J14
TRST setup time (negation) to TCLK high
—
22.1
ns
100
—
ns
8
—
ns
J2
J3
J3
TCLK (input)
J4
J4
Figure 5. Test clock input timing
TCLK
J5
Data inputs
J6
Input data valid
J7
Data outputs
Output data valid
J8
Data outputs
J7
Data outputs
Output data valid
Figure 6. Boundary scan (JTAG) timing
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
26
Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors
TCLK
J9
TDI/TMS
J10
Input data valid
J11
TDO
Output data valid
J12
TDO
J11
TDO
Output data valid
Figure 7. Test Access Port timing
TCLK
J14
J13
TRST
Figure 8. TRST timing
6.2 System modules
There are no specifications necessary for the device's system modules.
6.3 Clock modules
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
Freescale Semiconductor, Inc.
27
Peripheral operating requirements and behaviors
6.3.1 MCG specifications
Table 15. MCG specifications
Symbol
Description
Min.
Typ.
Max.
Unit
—
32.768
—
kHz
31.25
—
38.2
kHz
—
± 0.3
± 0.6
%fdco
1
Total deviation of trimmed average DCO output
frequency over fixed voltage and temperature
range of 0–70°C
—
± 1.5
± 4.5
%fdco
1
fintf_ft
Internal reference frequency (fast clock) —
factory trimmed at nominal VDD and 25°C
—
4
—
MHz
fintf_t
Internal reference frequency (fast clock) — user
trimmed at nominal VDD and 25 °C
3
—
5
MHz
fints_ft
Internal reference frequency (slow clock) —
factory trimmed at nominal VDD and 25 °C
fints_t
Internal reference frequency (slow clock) — user
trimmed — over fixed voltage and temperature
range of 0–70°C
Δfdco_res_t Resolution of trimmed average DCO output
frequency at fixed voltage and temperature —
using SCTRIM and SCFTRIM
Δfdco_t
floc_low
Loss of external clock minimum frequency —
RANGE = 00
(3/5) x
fints_t
—
—
kHz
floc_high
Loss of external clock minimum frequency —
RANGE = 01, 10, or 11
(16/5) x
fints_t
—
—
kHz
31.25
—
39.0625
kHz
20
20.97
25
MHz
40
41.94
50
MHz
60
62.91
75
MHz
80
83.89
100
MHz
—
23.99
—
MHz
—
47.97
—
MHz
—
71.99
—
MHz
—
95.98
—
MHz
—
180
—
—
150
—
—
—
1
Notes
FLL
ffll_ref
fdco
FLL reference frequency range
DCO output
frequency range
Low range (DRS=00)
2, 3
640 × ffll_ref
Mid range (DRS=01)
1280 × ffll_ref
Mid-high range (DRS=10)
1920 × ffll_ref
High range (DRS=11)
2560 × ffll_ref
fdco_t_DMX32 DCO output
frequency
Low range (DRS=00)
4, 5
732 × ffll_ref
Mid range (DRS=01)
1464 × ffll_ref
Mid-high range (DRS=10)
2197 × ffll_ref
High range (DRS=11)
2929 × ffll_ref
Jcyc_fll
FLL period jitter
• fVCO = 48 MHz
• fVCO = 98 MHz
tfll_acquire
FLL target frequency acquisition time
ps
ms
6
Table continues on the next page...
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
28
Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors
Table 15. MCG specifications (continued)
Symbol
Description
Min.
Typ.
Max.
Unit
48.0
—
100
MHz
—
1060
—
µA
—
600
—
µA
2.0
—
4.0
MHz
Notes
PLL
fvco
VCO operating frequency
Ipll
PLL operating current
• PLL @ 96 MHz (fosc_hi_1 = 8 MHz, fpll_ref =
2 MHz, VDIV multiplier = 48)
Ipll
PLL operating current
• PLL @ 48 MHz (fosc_hi_1 = 8 MHz, fpll_ref =
2 MHz, VDIV multiplier = 24)
fpll_ref
PLL reference frequency range
Jcyc_pll
PLL period jitter (RMS)
Jacc_pll
7
7
8
• fvco = 48 MHz
—
120
—
ps
• fvco = 100 MHz
—
50
—
ps
PLL accumulated jitter over 1µs (RMS)
8
• fvco = 48 MHz
—
1350
—
ps
• fvco = 100 MHz
—
600
—
ps
± 2.98
%
Dlock
Lock entry frequency tolerance
± 1.49
—
Dunl
Lock exit frequency tolerance
± 4.47
—
± 5.97
%
tpll_lock
Lock detector detection time
—
—
150 × 10-6
+ 1075(1/
fpll_ref)
s
9
1. This parameter is measured with the internal reference (slow clock) being used as a reference to the FLL (FEI clock
mode).
2. These typical values listed are with the slow internal reference clock (FEI) using factory trim and DMX32=0.
3. The resulting system clock frequencies should not exceed their maximum specified values. The DCO frequency deviation
(Δfdco_t) over voltage and temperature should be considered.
4. These typical values listed are with the slow internal reference clock (FEI) using factory trim and DMX32=1.
5. The resulting clock frequency must not exceed the maximum specified clock frequency of the device.
6. This specification applies to any time the FLL reference source or reference divider is changed, trim value is changed,
DMX32 bit is changed, DRS bits are changed, or changing from FLL disabled (BLPE, BLPI) to FLL enabled (FEI, FEE,
FBE, FBI). If a crystal/resonator is being used as the reference, this specification assumes it is already running.
7. Excludes any oscillator currents that are also consuming power while PLL is in operation.
8. This specification was obtained using a Freescale developed PCB. PLL jitter is dependent on the noise characteristics of
each PCB and results will vary.
9. This specification applies to any time the PLL VCO divider or reference divider is changed, or changing from PLL disabled
(BLPE, BLPI) to PLL enabled (PBE, PEE). If a crystal/resonator is being used as the reference, this specification assumes
it is already running.
6.3.2 Oscillator electrical specifications
This section provides the electrical characteristics of the module.
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
Freescale Semiconductor, Inc.
29
Peripheral operating requirements and behaviors
6.3.2.1
Oscillator DC electrical specifications
Table 16. Oscillator DC electrical specifications
Symbol
Description
Min.
Typ.
Max.
Unit
VDD
Supply voltage
1.71
—
3.6
V
IDDOSC
IDDOSC
Supply current — low-power mode (HGO=0)
Notes
1
• 32 kHz
—
500
—
nA
• 4 MHz
—
200
—
μA
• 8 MHz (RANGE=01)
—
300
—
μA
• 16 MHz
—
950
—
μA
• 24 MHz
—
1.2
—
mA
• 32 MHz
—
1.5
—
mA
Supply current — high gain mode (HGO=1)
1
• 32 kHz
—
25
—
μA
• 4 MHz
—
400
—
μA
• 8 MHz (RANGE=01)
—
500
—
μA
• 16 MHz
—
2.5
—
mA
• 24 MHz
—
3
—
mA
• 32 MHz
—
4
—
mA
Cx
EXTAL load capacitance
—
—
—
2, 3
Cy
XTAL load capacitance
—
—
—
2, 3
RF
Feedback resistor — low-frequency, low-power
mode (HGO=0)
—
—
—
MΩ
Feedback resistor — low-frequency, high-gain
mode (HGO=1)
—
10
—
MΩ
Feedback resistor — high-frequency, low-power
mode (HGO=0)
—
—
—
MΩ
Feedback resistor — high-frequency, high-gain
mode (HGO=1)
—
1
—
MΩ
Series resistor — low-frequency, low-power
mode (HGO=0)
—
—
—
kΩ
Series resistor — low-frequency, high-gain mode
(HGO=1)
—
200
—
kΩ
Series resistor — high-frequency, low-power
mode (HGO=0)
—
—
—
kΩ
—
0
—
kΩ
RS
2, 4
Series resistor — high-frequency, high-gain
mode (HGO=1)
Table continues on the next page...
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
30
Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors
Table 16. Oscillator DC electrical specifications (continued)
Symbol
Vpp5
1.
2.
3.
4.
5.
Description
Min.
Typ.
Max.
Unit
Peak-to-peak amplitude of oscillation (oscillator
mode) — low-frequency, low-power mode
(HGO=0)
—
0.6
—
V
Peak-to-peak amplitude of oscillation (oscillator
mode) — low-frequency, high-gain mode
(HGO=1)
—
VDD
—
V
Peak-to-peak amplitude of oscillation (oscillator
mode) — high-frequency, low-power mode
(HGO=0)
—
0.6
—
V
Peak-to-peak amplitude of oscillation (oscillator
mode) — high-frequency, high-gain mode
(HGO=1)
—
VDD
—
V
Notes
VDD=3.3 V, Temperature =25 °C
See crystal or resonator manufacturer's recommendation
Cx,Cy can be provided by using either the integrated capacitors or by using external components.
When low power mode is selected, RF is integrated and must not be attached externally.
The EXTAL and XTAL pins should only be connected to required oscillator components and must not be connected to any
other devices.
6.3.2.2
Symbol
Oscillator frequency specifications
Table 17. Oscillator frequency specifications
Description
Min.
Typ.
Max.
Unit
fosc_lo
Oscillator crystal or resonator frequency — low
frequency mode (MCG_C2[RANGE]=00)
32
—
40
kHz
fosc_hi_1
Oscillator crystal or resonator frequency — high
frequency mode (low range)
(MCG_C2[RANGE]=01)
3
—
8
MHz
fosc_hi_2
Oscillator crystal or resonator frequency — high
frequency mode (high range)
(MCG_C2[RANGE]=1x)
8
—
32
MHz
fec_extal
Input clock frequency (external clock mode)
—
—
50
MHz
tdc_extal
Input clock duty cycle (external clock mode)
40
50
60
%
Crystal startup time — 32 kHz low-frequency,
low-power mode (HGO=0)
—
750
—
ms
Crystal startup time — 32 kHz low-frequency,
high-gain mode (HGO=1)
—
250
—
ms
Crystal startup time — 8 MHz high-frequency
(MCG_C2[RANGE]=01), low-power mode
(HGO=0)
—
0.6
—
ms
Crystal startup time — 8 MHz high-frequency
(MCG_C2[RANGE]=01), high-gain mode
(HGO=1)
—
1
—
ms
tcst
Notes
1, 2
3, 4
1. Other frequency limits may apply when external clock is being used as a reference for the FLL or PLL.
2. When transitioning from FBE to FEI mode, restrict the frequency of the input clock so that, when it is divided by FRDIV, it
remains within the limits of the DCO input clock frequency.
3. Proper PC board layout procedures must be followed to achieve specifications.
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
Freescale Semiconductor, Inc.
31
Peripheral operating requirements and behaviors
4. Crystal startup time is defined as the time between the oscillator being enabled and the OSCINIT bit in the MCG_S register
being set.
NOTE
The 32 kHz oscillator works in low power mode by default and
cannot be moved into high power/gain mode.
6.3.3 32 kHz Oscillator Electrical Characteristics
This section describes the module electrical characteristics.
6.3.3.1
32 kHz oscillator DC electrical specifications
Table 18. 32kHz oscillator DC electrical specifications
Symbol
Description
Min.
Typ.
Max.
Unit
VBAT
Supply voltage
1.71
—
3.6
V
Internal feedback resistor
—
100
—
MΩ
Cpara
Parasitical capacitance of EXTAL32 and XTAL32
—
5
7
pF
Vpp1
Peak-to-peak amplitude of oscillation
—
0.6
—
V
RF
1. When a crystal is being used with the 32 kHz oscillator, the EXTAL32 and XTAL32 pins should only be connected to
required oscillator components and must not be connected to any other devices.
6.3.3.2
Symbol
fosc_lo
tstart
fec_extal32
32 kHz oscillator frequency specifications
Table 19. 32 kHz oscillator frequency specifications
Description
Min.
Typ.
Max.
Unit
Oscillator crystal
—
32.768
—
kHz
Crystal start-up time
—
1000
—
ms
1
Externally provided input clock frequency
—
32.768
—
kHz
2
700
—
VBAT
mV
2, 3
vec_extal32 Externally provided input clock amplitude
Notes
1. Proper PC board layout procedures must be followed to achieve specifications.
2. This specification is for an externally supplied clock driven to EXTAL32 and does not apply to any other clock input. The
oscillator remains enabled and XTAL32 must be left unconnected.
3. The parameter specified is a peak-to-peak value and VIH and VIL specifications do not apply. The voltage of the applied
clock must be within the range of VSS to VBAT.
6.4 Memories and memory interfaces
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
32
Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors
6.4.1 Flash electrical specifications
This section describes the electrical characteristics of the flash memory module.
6.4.1.1
Flash timing specifications — program and erase
The following specifications represent the amount of time the internal charge pumps are
active and do not include command overhead.
Table 20. NVM program/erase timing specifications
Symbol
Description
Min.
Typ.
Max.
Unit
thvpgm4
thversscr
Longword Program high-voltage time
—
7.5
18
μs
Sector Erase high-voltage time
—
13
113
ms
1
—
416
3616
ms
1
Notes
thversblk256k Erase Block high-voltage time for 256 KB
Notes
1. Maximum time based on expectations at cycling end-of-life.
6.4.1.2
Symbol
Flash timing specifications — commands
Table 21. Flash command timing specifications
Description
Min.
Typ.
Max.
Unit
—
—
1.7
ms
Read 1s Block execution time
trd1blk256k
• 256 KB program/data flash
trd1sec2k
Read 1s Section execution time (flash sector)
—
—
60
μs
1
tpgmchk
Program Check execution time
—
—
45
μs
1
trdrsrc
Read Resource execution time
—
—
30
μs
1
tpgm4
Program Longword execution time
—
65
145
μs
Erase Flash Block execution time
tersblk256k
tersscr
• 256 KB program/data flash
Erase Flash Sector execution time
2
—
435
3700
ms
—
14
114
ms
2
Program Section execution time
tpgmsec512
• 512 bytes flash
—
2.4
—
ms
tpgmsec1k
• 1 KB flash
—
4.7
—
ms
tpgmsec2k
• 2 KB flash
—
9.3
—
ms
trd1all
Read 1s All Blocks execution time
—
—
1.8
ms
trdonce
Read Once execution time
—
—
25
μs
Program Once execution time
—
65
—
μs
tersall
Erase All Blocks execution time
—
870
7400
ms
2
tvfykey
Verify Backdoor Access Key execution time
—
—
30
μs
1
tpgmonce
1
Table continues on the next page...
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
Freescale Semiconductor, Inc.
33
Peripheral operating requirements and behaviors
Table 21. Flash command timing specifications (continued)
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
Swap Control execution time
tswapx01
• control code 0x01
—
200
—
μs
tswapx02
• control code 0x02
—
70
150
μs
tswapx04
• control code 0x04
—
70
150
μs
tswapx08
• control code 0x08
—
—
30
μs
—
ms
Program Partition for EEPROM execution time
tpgmpart64k
• 256 KB FlexNVM
—
450
tpgmpart256k
Set FlexRAM Function execution time:
tsetramff
• Control Code 0xFF
—
70
—
μs
tsetram32k
• 32 KB EEPROM backup
—
0.8
1.2
ms
tsetram64k
• 64 KB EEPROM backup
—
1.3
1.9
ms
tsetram256k
• 256 KB EEPROM backup
—
4.5
5.5
ms
Byte-write to FlexRAM for EEPROM operation
teewr8bers
Byte-write to erased FlexRAM location execution
time
—
175
260
μs
3
Byte-write to FlexRAM execution time:
teewr8b32k
• 32 KB EEPROM backup
—
385
1800
μs
teewr8b64k
• 64 KB EEPROM backup
—
475
2000
μs
teewr8b128k
• 128 KB EEPROM backup
—
650
2400
μs
teewr8b256k
• 256 KB EEPROM backup
—
1000
3200
μs
Word-write to FlexRAM for EEPROM operation
teewr16bers Word-write to erased FlexRAM location
execution time
—
175
260
μs
Word-write to FlexRAM execution time:
teewr16b32k
• 32 KB EEPROM backup
—
385
1800
μs
teewr16b64k
• 64 KB EEPROM backup
—
475
2000
μs
teewr16b128k
• 128 KB EEPROM backup
—
650
2400
μs
teewr16b256k
• 256 KB EEPROM backup
—
1000
3200
μs
Longword-write to FlexRAM for EEPROM operation
teewr32bers Longword-write to erased FlexRAM location
execution time
—
360
540
μs
Longword-write to FlexRAM execution time:
teewr32b32k
• 32 KB EEPROM backup
—
630
2050
μs
teewr32b64k
• 64 KB EEPROM backup
—
810
2250
μs
teewr32b128k
• 128 KB EEPROM backup
—
1200
2675
μs
teewr32b256k
• 256 KB EEPROM backup
—
1900
3500
μs
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
34
Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors
1. Assumes 25 MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
6.4.1.3
Flash high voltage current behaviors
Table 22. Flash high voltage current behaviors
Symbol
Description
IDD_PGM
IDD_ERS
6.4.1.4
Symbol
Min.
Typ.
Max.
Unit
Average current adder during high voltage
flash programming operation
—
2.5
6.0
mA
Average current adder during high voltage
flash erase operation
—
1.5
4.0
mA
Reliability specifications
Table 23. NVM reliability specifications
Description
Min.
Typ.1
Max.
Unit
Notes
Program Flash
tnvmretp10k Data retention after up to 10 K cycles
5
50
—
years
tnvmretp1k
Data retention after up to 1 K cycles
20
100
—
years
nnvmcycp
Cycling endurance
10 K
50 K
—
cycles
2
Data Flash
tnvmretd10k Data retention after up to 10 K cycles
5
50
—
years
tnvmretd1k
Data retention after up to 1 K cycles
20
100
—
years
nnvmcycd
Cycling endurance
10 K
50 K
—
cycles
2
FlexRAM as EEPROM
tnvmretee100 Data retention up to 100% of write endurance
5
50
—
years
tnvmretee10 Data retention up to 10% of write endurance
20
100
—
years
Write endurance
3
nnvmwree16
• EEPROM backup to FlexRAM ratio = 16
35 K
175 K
—
writes
nnvmwree128
• EEPROM backup to FlexRAM ratio = 128
315 K
1.6 M
—
writes
nnvmwree512
• EEPROM backup to FlexRAM ratio = 512
1.27 M
6.4 M
—
writes
nnvmwree4k
• EEPROM backup to FlexRAM ratio = 4096
10 M
50 M
—
writes
nnvmwree32k
• EEPROM backup to FlexRAM ratio =
32,768
80 M
400 M
—
writes
1. Typical data retention values are based on measured response accelerated at high temperature and derated to a constant
25°C use profile. Engineering Bulletin EB618 does not apply to this technology. Typical endurance defined in Engineering
Bulletin EB619.
2. Cycling endurance represents number of program/erase cycles at -40°C ≤ Tj ≤ 125°C.
3. Write endurance represents the number of writes to each FlexRAM location at -40°C ≤Tj ≤ 125°C influenced by the cycling
endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup per subsystem. Minimum and
typical values assume all byte-writes to FlexRAM.
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
Freescale Semiconductor, Inc.
35
Peripheral operating requirements and behaviors
6.4.1.5
Write endurance to FlexRAM for EEPROM
When the FlexNVM partition code is not set to full data flash, the EEPROM data set size
can be set to any of several non-zero values.
The bytes not assigned to data flash via the FlexNVM partition code are used by the flash
memory module to obtain an effective endurance increase for the EEPROM data. The
built-in EEPROM record management system raises the number of program/erase cycles
that can be attained prior to device wear-out by cycling the EEPROM data through a
larger EEPROM NVM storage space.
While different partitions of the FlexNVM are available, the intention is that a single
choice for the FlexNVM partition code and EEPROM data set size is used throughout the
entire lifetime of a given application. The EEPROM endurance equation and graph
shown below assume that only one configuration is ever used.
Writes_subsystem =
EEPROM – 2 × EEESPLIT × EEESIZE
EEESPLIT × EEESIZE
× Write_efficiency × nnvmcycd
where
• Writes_subsystem — minimum number of writes to each FlexRAM location for
subsystem (each subsystem can have different endurance)
• EEPROM — allocated FlexNVM for each EEPROM subsystem based on DEPART;
entered with the Program Partition command
• EEESPLIT — FlexRAM split factor for subsystem; entered with the Program
Partition command
• EEESIZE — allocated FlexRAM based on DEPART; entered with the Program
Partition command
• Write_efficiency —
• 0.25 for 8-bit writes to FlexRAM
• 0.50 for 16-bit or 32-bit writes to FlexRAM
• nnvmcycd — data flash cycling endurance (the following graph assumes 10,000
cycles)
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
36
Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors
Figure 9. EEPROM backup writes to FlexRAM
6.4.2 EzPort Switching Specifications
Table 24. EzPort switching specifications
Num
Description
Min.
Max.
Unit
Operating voltage
1.71
3.6
V
EP1
EZP_CK frequency of operation (all commands except
READ)
—
fSYS/2
MHz
EP1a
EZP_CK frequency of operation (READ command)
—
fSYS/8
MHz
EP2
EZP_CS negation to next EZP_CS assertion
2 x tEZP_CK
—
ns
EP3
EZP_CS input valid to EZP_CK high (setup)
5
—
ns
EP4
EZP_CK high to EZP_CS input invalid (hold)
5
—
ns
EP5
EZP_D input valid to EZP_CK high (setup)
2
—
ns
EP6
EZP_CK high to EZP_D input invalid (hold)
5
—
ns
EP7
EZP_CK low to EZP_Q output valid
—
16
ns
EP8
EZP_CK low to EZP_Q output invalid (hold)
0
—
ns
EP9
EZP_CS negation to EZP_Q tri-state
—
12
ns
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
Freescale Semiconductor, Inc.
37
Peripheral operating requirements and behaviors
EZP_CK
EP3
EP2
EP4
EZP_CS
EP9
EP7
EP8
EZP_Q (output)
EP5
EP6
EZP_D (input)
Figure 10. EzPort Timing Diagram
6.4.3 Flexbus Switching Specifications
All processor bus timings are synchronous; input setup/hold and output delay are given in
respect to the rising edge of a reference clock, FB_CLK. The FB_CLK frequency may be
the same as the internal system bus frequency or an integer divider of that frequency.
The following timing numbers indicate when data is latched or driven onto the external
bus, relative to the Flexbus output clock (FB_CLK). All other timing relationships can be
derived from these values.
Table 25. Flexbus limited voltage range switching specifications
Num
Description
Min.
Max.
Unit
Notes
Operating voltage
2.7
3.6
V
Frequency of operation
—
FB_CLK
MHz
FB1
Clock period
20
—
ns
FB2
Address, data, and control output valid
—
11.5
ns
1
FB3
Address, data, and control output hold
0.5
—
ns
1
FB4
Data and FB_TA input setup
8.5
—
ns
2
FB5
Data and FB_TA input hold
0.5
—
ns
2
1. Specification is valid for all FB_AD[31:0], FB_BE/BWEn, FB_CSn, FB_OE, FB_R/W,FB_TBST, FB_TSIZ[1:0], FB_ALE,
and FB_TS.
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
38
Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors
2. Specification is valid for all FB_AD[31:0] and FB_TA.
Table 26. Flexbus full voltage range switching specifications
Num
Description
Min.
Max.
Unit
Operating voltage
1.71
3.6
V
Frequency of operation
Notes
—
FB_CLK
MHz
1/FB_CLK
—
ns
Address, data, and control output valid
—
13.5
ns
1
FB3
Address, data, and control output hold
0
—
ns
1
FB4
Data and FB_TA input setup
13.7
—
ns
2
FB5
Data and FB_TA input hold
0.5
—
ns
2
FB1
Clock period
FB2
1. Specification is valid for all FB_AD[31:0], FB_BE/BWEn, FB_CSn, FB_OE, FB_R/W,FB_TBST, FB_TSIZ[1:0], FB_ALE,
and FB_TS.
2. Specification is valid for all FB_AD[31:0] and FB_TA.
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
Freescale Semiconductor, Inc.
39
Peripheral operating requirements and behaviors
FB1
FB_CLK
FB3
FB5
FB_A[Y]
Address
FB4
FB2
FB_D[X]
Address
Data
FB_RW
FB_TS
FB_ALE
AA=1
FB_CSn
AA=0
FB_OEn
FB4
FB_BEn
FB5
AA=1
FB_TA
FB_TSIZ[1:0]
AA=0
TSIZ
Figure 11. FlexBus read timing diagram
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
40
Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors
FB1
FB_CLK
FB2
FB3
FB_A[Y]
Address
FB_D[X]
Address
Data
FB_RW
FB_TS
FB_ALE
AA=1
FB_CSn
AA=0
FB_OEn
FB4
FB_BEn
FB5
AA=1
FB_TA
AA=0
FB_TSIZ[1:0]
TSIZ
Figure 12. FlexBus write timing diagram
6.5 Security and integrity modules
There are no specifications necessary for the device's security and integrity modules.
6.6 Analog
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
Freescale Semiconductor, Inc.
41
Peripheral operating requirements and behaviors
6.6.1 ADC electrical specifications
The 16-bit accuracy specifications listed in Table 27 and Table 28 are achievable on the
differential pins ADCx_DP0, ADCx_DM0, ADCx_DP1, ADCx_DM1, ADCx_DP3, and
ADCx_DM3.
The ADCx_DP2 and ADCx_DM2 ADC inputs are connected to the PGA outputs and are
not direct device pins. Accuracy specifications for these pins are defined in Table 29 and
Table 30.
All other ADC channels meet the 13-bit differential/12-bit single-ended accuracy
specifications.
6.6.1.1
16-bit ADC operating conditions
Table 27. 16-bit ADC operating conditions
Symbol
Description
Conditions
Min.
Typ.1
Max.
Unit
VDDA
Supply voltage
Absolute
1.71
—
3.6
V
ΔVDDA
Supply voltage
Delta to VDD (VDD - VDDA)
-100
0
+100
mV
2
ΔVSSA
Ground voltage
Delta to VSS (VSS - VSSA)
-100
0
+100
mV
2
VREFH
ADC reference
voltage high
1.13
VDDA
VDDA
V
VREFL
ADC reference
voltage low
VSSA
VSSA
VSSA
V
VADIN
Input voltage
• 16-bit differential mode
VREFL
—
31/32 *
VREFH
V
• All other modes
VREFL
—
• 16-bit mode
—
8
10
• 8-bit / 10-bit / 12-bit
modes
—
4
5
—
2
5
CADIN
RADIN
RAS
Input capacitance
Input resistance
Notes
VREFH
pF
kΩ
Analog source
resistance
13-bit / 12-bit modes
fADCK < 4 MHz
—
—
5
kΩ
fADCK
ADC conversion
clock frequency
≤ 13-bit mode
1.0
—
18.0
MHz
4
fADCK
ADC conversion
clock frequency
16-bit mode
2.0
—
12.0
MHz
4
Crate
ADC conversion
rate
≤ 13-bit modes
No ADC hardware averaging
3
5
20.000
—
818.330
Ksps
Continuous conversions
enabled, subsequent
conversion time
Table continues on the next page...
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
42
Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors
Table 27. 16-bit ADC operating conditions (continued)
Symbol
Crate
Description
Conditions
ADC conversion
rate
16-bit mode
Min.
Typ.1
Max.
Unit
Notes
5
No ADC hardware averaging
37.037
—
461.467
Ksps
Continuous conversions
enabled, subsequent
conversion time
1. Typical values assume VDDA = 3.0 V, Temp = 25 °C, fADCK = 1.0 MHz, unless otherwise stated. Typical values are for
reference only, and are not tested in production.
2. DC potential difference.
3. This resistance is external to MCU. To achieve the best results, the analog source resistance must be kept as low as
possible. The results in this data sheet were derived from a system that had < 8 Ω analog source resistance. The RAS/CAS
time constant should be kept to < 1 ns.
4. To use the maximum ADC conversion clock frequency, the ADHSC bit must be set and the ADLPC bit must be clear.
5. For guidelines and examples of conversion rate calculation, download the ADC calculator tool.
SIMPLIFIED
INPUT PIN EQUIVALENT
CIRCUIT
Z ADIN
SIMPLIFIED
CHANNEL SELECT
CIRCUIT
Pad
leakage
due to
input
protection
Z AS
R AS
ADC SAR
ENGINE
R ADIN
V ADIN
C AS
V AS
R ADIN
INPUT PIN
R ADIN
INPUT PIN
R ADIN
INPUT PIN
C ADIN
Figure 13. ADC input impedance equivalency diagram
6.6.1.2
16-bit ADC electrical characteristics
Table 28. 16-bit ADC characteristics (VREFH = VDDA, VREFL = VSSA)
Symbol
Description
IDDA_ADC
Supply current
Conditions1
Min.
Typ.2
Max.
Unit
Notes
0.215
—
1.7
mA
3
Table continues on the next page...
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
Freescale Semiconductor, Inc.
43
Peripheral operating requirements and behaviors
Table 28. 16-bit ADC characteristics (VREFH = VDDA, VREFL = VSSA) (continued)
Symbol
fADACK
Description
ADC
asynchronous
clock source
Sample Time
TUE
DNL
INL
EFS
Conditions1
Min.
Typ.2
Max.
Unit
Notes
• ADLPC = 1, ADHSC = 0
1.2
2.4
3.9
MHz
• ADLPC = 1, ADHSC = 1
2.4
4.0
6.1
MHz
tADACK = 1/
fADACK
• ADLPC = 0, ADHSC = 0
3.0
5.2
7.3
MHz
• ADLPC = 0, ADHSC = 1
4.4
6.2
9.5
MHz
LSB4
5
LSB4
5
LSB4
5
LSB4
VADIN =
VDDA
See Reference Manual chapter for sample times
Total unadjusted
error
• 12-bit modes
—
±4
±6.8
•
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