MMG2401NR2

Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 3, 5/2006 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz Power Gain: 27.5 dB Typ (@ f = 2450 MHz, Class AB) High Gain, High Efficiency and High Linearity EVM = 3% Typ @ Pout = +19 dBM, 14% PAE RoHS Compliant In Tape and Reel. R2 Suffix = 1,500 Units per 12 mm, 7 inch Reel. 2400--2500 MHz, 27.5 dB, 26.5 dBm 802.11g WLAN POWER AMPLIFIER InGaP HBT CASE 1483--01 QFN 3x3 Table 1. Maximum Ratings Rating Symbol Value Unit Collector Supply VCC 5 V Base Supply First Stage VB1 5 V Base Supply Second Stage VB2 5 V VBIAS 5 V IDC 171 mA Symbol Value Unit RθJC 185 (1) °C/W Case Operating Temperature Range TC -- 40 to +85 °C Storage Temperature Range Tstg -- 55 to +150 °C Detector Bias Supply DC Current Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) II (Minimum) ARCHIVE INFORMATION ARCHIVE INFORMATION • • • • • Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 1 260 °C 1. Simulated. © Freescale Semiconductor, Inc., 2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor MMG2401NR2 1 Symbol Min Typ Max Unit P1dB 24 26.5 — dBm Gp 26 27.5 29 dB Error Vector Magnitude (Pout = 19 dBm, 64 QAM/54 Mbps) EVM — 3 — % Total Current (Pout = 19 dBm) ICtotal — 210 — mA Quiescent Current IDCQ — 156 — mA Bias Control Reference Current (ICQ = 66 mA) Iref — 8.4 — mA Gain Flatness (Over 100 MHz) GF — ±0.2 — dB Gain Variation over Temperature (--40 to 85°C) — — ±1 — dB Input Return Loss IRL — --10 --7.5 dB Reverse Isolation — — --35 — dB Second Harmonic (Pout = 19 dBm) — — --45 — dBc Third Harmonic (Pout = 19 dBm) — — --35 — dBc Ramp--On Time (10--90%) tON — 100 — ns Characteristic Output Power at 1dB Compression ARCHIVE INFORMATION Power Gain (Pout = 19 dBm) ARCHIVE INFORMATION Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted.) VCC = 3.3 Vdc, VBIAS = 3 Vdc, ICQ = 83 mA, f = 2450 MHz MMG2401NR2 2 RF Device Data Freescale Semiconductor Name Pin Number VB1 1 RFIN 2, 3 Description VCC1 NC VB2 12 11 10 Base power supply for first stage amplifier. RF input for the power amplifier. This pin is DC--shorted to GND and AC--coupled to the transistor base of the first stage. VBIAS 4 Detector bias voltage supply. VREF 5 Detector output voltage reference. Vout -- VREF is useful for tracking detector performance over temperature. VOUT 6 Detector output voltage. Collector power supply for second stage amplifier. VCC2 7 RFOUT 8, 9 RF output for the power amplifier. This pin is DC--coupled and requires a DC--blocking series capacitor. VB2 10 Base power supply for second stage amplifier. NC 11 Not connected. VCC1 12 Collector power supply for first stage amplifier. GND Backside Center Metal The center metal base of the QFN 3x3 package provides both DC and RF ground as well as heat sink contact for the power amplifier. VB1 1 9 RFOUT RFIN 2 8 RFOUT RFIN 3 7 VCC2 6 4 5 VBIAS VREF VOUT (Top View) Figure 1. Pin Connections ARCHIVE INFORMATION ARCHIVE INFORMATION Table 6. Functional Pin Description MMG2401NR2 RF Device Data Freescale Semiconductor 3 VB1 VCC1 C11 C1 C2 C3 C4 VB2 VCC2 C5 C12 C10 C9 C8 C7 C6 L1 RF INPUT RF OUTPUT Z2 C15 C14 VBIAS Z1, Z2 PCB VREF C13 VOUT 0.10″ x 0.5395″ Microstrip Getek ML200M, 0.005″, εr = 3.8 Figure 2. MMG2401NR2 Test Circuit Schematic Table 7. MMG2401NR2 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C6 1 μF Chip Capacitor 12065A105JAT2A AVX C2, C7 0.1 μF Chip Capacitor 12065A104JAT2A AVX C3, C8 0.01 μF Chip Capacitor 12065A103JAT2A AVX C4, C9, C11, C12 100 pF Chip Capacitor 08055A101FAT2A AVX C5, C10, C13, C14, C15 20 pF Chip Capacitor 12065A200CAT2A AVX L1 7.5 nH Chip Inductor 0402CS--7N5XJBC Coilcraft ARCHIVE INFORMATION ARCHIVE INFORMATION Z1 MMG2401NR2 4 RF Device Data Freescale Semiconductor C1 C2 C3 C4 C11 C12 C5 VB2 VB1 ARCHIVE INFORMATION ARCHIVE INFORMATION VCC1 VCC2 VBIAS C14 C15 VREF VOUT C13 L1 C10 C9 C8 C7 C6 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 3. MMG2401NR2 Test Circuit Component Layout MMG2401NR2 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 28 TC = 25_C --40_C 85_C 26 VCC = 3.3 Vdc VB1 = 2.9 Vdc f = 2450 MHz 24 5 0 10 15 20 5 4 3 2 85_C 1 5 0 10 15 20 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 4. Power Gain versus Output Power Figure 5. Error Vector Magnitude versus Output Power 25 10 TC = --40_C 20 25_C 15 85_C 10 VCC = 3.3 Vdc VB1 = 2.9 Vdc f = 2450 MHz 5 0 5 0 10 15 20 1 TC = 85_C 0.1 --40_C 25_C VCC = 3.3 Vdc VB1 = 2.9 Vdc f = 2450 MHz 0.01 5 0 25 10 15 20 25 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 7. Detector Output Voltage versus Output Power Figure 6. Efficiency versus Output Power 4 250 VCC = 3.3 Vdc VB1 = 2.9 Vdc f = 2450 MHz 2 200 I CC , TOTAL CURRENT (mA) 3 AM to PM (_) TC = 25_C --40_C 0 25 25 η, EFFICIENCY (%) VCC = 3.3 Vdc VB1 = 2.9 Vdc f = 2450 MHz 6 1 TC = 85_C 150 0 25_C 100 --1 --2 --40_C VCC = 3.3 Vdc VB1 = 2.9 Vdc f = 2450 MHz 50 --3 --4 ARCHIVE INFORMATION 27 25 ARCHIVE INFORMATION EVM, ERROR VECTOR MAGNITUDE (%) 7 Vout , DETECTOR OUTPUT VOLTAGE (V) Gp, POWER GAIN (dB) 29 0 0 5 10 15 20 25 30 0 5 10 15 20 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 8. AM to PM versus Output Power Figure 9. Total Current versus Output Power 25 MMG2401NR2 6 RF Device Data Freescale Semiconductor 0 30 --5 20 VCC = 3.3 Vdc VB1 = 2.9 Vdc 10 2.1 REVERSE TRANSCONDUCTANCE ISOLATION (dB) 2 2.2 2.3 2.4 2.5 2.6 2.7 --10 --15 --20 VCC = 3.3 Vdc VB1 = 2.9 Vdc --25 2 2.8 2.1 2.2 2.3 2.4 2.5 2.6 2.7 f, FREQUENCY (GHz) f, FREQUENCY (GHz) Figure 10. Power Gain (S21) versus Frequency Figure 11. Input Return Loss (S11) versus Frequency 2.8 0 --20 --30 --40 --50 --60 VCC = 3.3 Vdc VB1 = 2.9 Vdc --70 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 --5 --10 --15 --20 VCC = 3.3 Vdc VB1 = 2.9 Vdc --25 2.8 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 f, FREQUENCY (GHz) f, FREQUENCY (GHz) Figure 12. Reverse Transconductance Isolation (S12) versus Frequency Figure 13. Output Return Loss (S22) versus Frequency 2.8 ARCHIVE INFORMATION 25 15 ARCHIVE INFORMATION IRL, INPUT RETURN LOSS (dB) 35 ORL, OUTPUT RETURN LOSS (dB) G p , POWER GAIN (dB) TYPICAL CHARACTERISTICS MMG2401NR2 RF Device Data Freescale Semiconductor 7 A 4X D C b 1 E E/2 PIN1 ID N=12 4X D 1 2 3 0.45 1 2 3 B 2 F F/2 (Ny--1)e L 0.25 MIN. SEATING PLANE TOP VIEW SIDE VIEW e (Nx--1)e 2 BOTTOM VIEW NOTES: 1. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.20 AND 0.25 MM FROM TERMINAL TIP. 2. N IS THE NUMBER OF TERMINALS (12). Nx IS THE NUMBER OF TERMINALS IN X--DIRECTION AND Ny IS THE NUMBER OF TERMINALS IN Y--DIRECTION. 3. ALL DIMENSIONS ARE IN MILLIMETERS. DIM A B C D E F b e Nx Ny SYMBOLS EXPOSED PAD MIN 1.15 MIN NOM MAX 3.00 BSC 3.00 BSC -0.85 1.00 0.24 0.42 0.60 SEE EXPOSED PAD SEE EXPOSED PAD 0.18 0.23 0.30 0.50 BSC 3 3 E NOM 1.30 MAX 1.45 MIN 1.15 STANDARD DETAIL ”A” -- PIN #1 ID AND TIE BAR MARK OPTION F NOM 1.30 MAX 1.45 Figure 14. MMG2401NR2 Specific Mechanical Outline Information ARCHIVE INFORMATION ARCHIVE INFORMATION 0.25 MIN. MMG2401NR2 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS A 3 M PIN 1 INDEX AREA 2X 0.1 C DETAIL G B M 2X 0.1 C 1.55 1.25 12 10 EXPOSED DIE ATTACH PAD DETAIL M PIN 1 INDEX 9 1 1.55 1.25 3 7 DETAIL N 6 12X 0.75 0.50 9 4 12X 0.30 0.18 0.10 M 8X 0.5 C A B VIEW M -- M CASE 1483--01 ISSUE A QFN 3x3 NOTES: 1. ALL DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. THE COMPLETE JEDEC DESIGNATOR FOR THIS PACKAGE IS: HF--PQFP--N. 4. FOR ANVIL SINGULATED QFN PACKAGES, MAXIMUM DRAFT ANGLED IS 12 _. 5. PACKAGE WARPAGE MAX 0.05 MM. 6. CORNER CHAMFER MAY NOT BE PRESENT. DIMENSIONS OF OPTIONAL FEATURES ARE FOR REFERENCE ONLY. 7. CORNER LEADS CAN BE USED FOR THERMAL OR GROUND AND ARE TIED TO THE DIE ATTACH PAD. THESE LEADS ARE NOT INCLUDED IN THE LEAD COUNT. 8. COPLANARITY APPLIES TO LEAD, CORNER LEADS, AND DIE ATTACH PAD. 9. THIS DIMENSION APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.20 MM AND 0.25 MM FROM TERMINAL TIP. ARCHIVE INFORMATION ARCHIVE INFORMATION 3 Page 1 of 3 MMG2401NR2 RF Device Data Freescale Semiconductor 9 0.60 0.24 (45_) (0.25) 0.60 0.24 DETAIL N CORNER CONFIGURATION 6 6 ARCHIVE INFORMATION DETAIL N PREFERRED CORNER CONFIGURATION ARCHIVE INFORMATION (0.25) 0.1 C 1.0 0.8 1.00 0.75 0.05 C 0.05 0.00 C DETAIL G VIEW ROTATED 90_ CW 8 SEATING PLANE CASE 1483--01 ISSUE A QFN 3x3 Page 2 of 3 MMG2401NR2 10 RF Device Data Freescale Semiconductor 0.217 0.137 DETAIL S (0.25) 0.217 0.137 (0.1) DETAIL S BACKSIDE PIN 1 INDEX DETAIL M PREFERRED BACKSIDE PIN 1 INDEX 7 TIE BAR MARK OPTION PIN 1 ID 4X 0.23 0.13 (45_ ) 4X 0.65 0.30 (0.45) (0.35) R0.2 PIN 1 ID DETAIL M DETAIL M BACKSIDE PIN 1 INDEX OPTION BACKSIDE PIN 1 INDEX OPTION CASE 1483--01 ISSUE A QFN 3x3 ARCHIVE INFORMATION ARCHIVE INFORMATION (0.25) Page 3 of 3 MMG2401NR2 RF Device Data Freescale Semiconductor 11 Home Page: www.freescale.com E--mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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ARCHIVE INFORMATION ARCHIVE INFORMATION How to Reach Us: Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006, 2008. All rights reserved. MMG2401NR2 Document Number: MMG2401 Rev. 3, 5/2006 12 RF Device Data Freescale Semiconductor