Freescale Semiconductor
Technical Data
Document Number: MRF5S9100
Rev. 4, 5/2006
Replaced by MRF5S9100NR1/NBR1. There are no form, fit or function changes with
this part replacement. N suffix added to part number to indicate transition to lead - free
terminations.
MRF5S9100MR1
MRF5S9100MBR1
RF Power Field Effect Transistors
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 26 volt base station equipment.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 26 Volts,
IDQ = 950 mA, Pout = 20 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 19.5 dB
Drain Efficiency — 28%
ACPR @ 750 kHz Offset — - 46.8 dBc @ 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 100 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
880 MHz, 20 W AVG., 26 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF5S9100MR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF5S9100MBR1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain- Source Voltage
Rating
VDSS
- 0.5, +68
Vdc
Gate - Source Voltage
VGS
- 0.5, + 15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
336
1.92
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1,2)
Unit
ARCHIVE INFORMATION
ARCHIVE INFORMATION
N - Channel Enhancement - Mode Lateral MOSFETs
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 20 W CW
RθJC
0.52
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S9100MR1 MRF5S9100MBR1
1
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 μA)
VGS(th)
2
2.8
3.5
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 950 mAdc)
VGS(Q)
—
3.7
—
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 2.0 Adc)
VDS(on)
—
0.21
0.3
Vdc
gfs
—
7
—
S
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
70
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2.2
—
pF
On Characteristics
Forward Transconductance
(VDS = 10 Vdc, ID = 6 Adc)
Dynamic Characteristics (1)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 950 mA, Pout = 20 W Avg. N - CDMA, f = 880 MHz,
Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB
@ 0.01% Probability on CCDF
Power Gain
Gps
18
19.5
—
dB
Drain Efficiency
ηD
26
28
—
%
ACPR
—
- 46.8
- 45
dBc
IRL
—
- 19
-9
dB
Adjacent Channel Power Ratio
Input Return Loss
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Off Characteristics
1. Part is internally input matched.
MRF5S9100MR1 MRF5S9100MBR1
2
RF Device Data
Freescale Semiconductor
B1
+
C22
+
C21
+
C20
C19
VSUPPLY
C17
C18
C6
Z2
C1
ARCHIVE INFORMATION
C8
DUT
Z1
Z3
Z4
Z5
C3
C4
Z6
Z7
+
C15
+
C14
+
C13
L2
L1
RF
INPUT
C16
Z9
RF
OUTPUT
C10
Z10
Z11
Z12
Z13
Z14
Z15
Z8
C12
C2
Z1, Z15
Z2
Z3
Z4
Z5
Z6, Z11
Z7
C7
C5
0.200″ x 0.080″ Microstrip
0.105″ x 0.080″ Microstrip
0.954″ x 0.080″ Microstrip
0.115″ x 0.220″ Microstrip
0.375″ x 0.220″ Microstrip
0.200″ x 0.220″ x 0.620″ Taper
0.152″ x 0.620″ Microstrip
Z8
Z9
Z10
Z12
Z13
Z14
PCB
C9
C11
0.163″ x 0.620″ Microstrip
0.238″ x 0.620″ Microstrip
0.077″ x 0.620″ Microstrip
0.381″ x 0.220″ Microstrip
0.114″ x 0.220″ Microstrip
1.052″ x 0.080″ Microstrip
Arlon GX0300, 0.030″, εr = 2.55
Figure 1. MRF5S9100MR1(MBR1) Test Circuit Schematic
Table 6. MRF5S9100MR1(MBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Ferrite Bead, Surface Mount
2743019447
Fair - Rite
C1, C12, C18
18 pF Chip Capacitors
100B180JP 500X
ATC
C2
0.6 - 4.5 pF Variable Capacitor, Gigatrim
27271SL
Johanson Dielectrics
C3, C11
0.8 - 8.0 pF Variable Capacitors, Gigatrim
27291SL
Johanson Dielectrics
C4
6.2 pF Chip Capacitor
100B6R2JP 500X
ATC
C5, C6
12 pF Chip Capacitors
100B120JP 500X
ATC
C7, C8
11 pF Chip Capacitors
100B110JP 500X
ATC
C9, C10
5.1 pF Chip Capacitors
100B5R1JP 500X
ATC
C13
470 mF, 63 V Electrolytic Capacitor
NACZF471M63V
Nippon
C14, C15
22 mF, 50 V Tantalum Capacitors
T491X226K035AS
Kemet
C16, C17, C19
0.56 mF, 50 V Chip Capacitors
C1825C564J5GAC
Kemet
C20, C21
47 mF, 16 V Tantalum Capacitors
T491D4T6K016AS
Kemet
C22
100 mF, 50 V Electrolytic Capacitor
515D107M050BB6A
Multicomp
L1
7.15 nH Inductor
1606 - 7
CoilCraft
L2
22 nH Inductor
B07T - 5
CoilCraft
ARCHIVE INFORMATION
VBIAS
MRF5S9100MR1 MRF5S9100MBR1
RF Device Data
Freescale Semiconductor
3
C21 C20
C15 C14
VGG
C13
B1
C18
C19
C16
C6
C8
VDD
C17
C10
ARCHIVE INFORMATION
C2
C3
C5
WB2
WB1
C4
L1
CUT OUT AREA
C1
C12
L2
C9
C7
C11
MRF9100M
Rev 2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF5S9100MR1(MBR1) Test Circuit Component Layout
ARCHIVE INFORMATION
C22
MRF5S9100MR1 MRF5S9100MBR1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
40
18
ηD
30
14
IRL
12
ACPR
6
830
20
−30
−40
10
−50
ALT
8
840
−60
850
860
870
880
890
900
910
−70
920
−10
−15
−20
−25
−30
f, FREQUENCY (MHz)
18
16
8
Gps
6
ηD
VDD = 26 Vdc, Pout = 2 W (Avg.), IDQ = 950 mA
N−CDMA IS−95 (Pilot, Sync, Paging, Traffic
Codes 8 through 13)
14
IRL
12
10
−40
−50
ACPR
−60
8
6
830
4
−70
ALT
840
850
860
870
880
890
900
910
−80
920
−10
−15
−20
−25
−30
IRL, INPUT RETURN LOSS (dB)
G ps , POWER GAIN (dB)
20
10
ACPR (dBc), ALT (dBc)
22
ηD , DRAIN
EFFICIENCY (%)
Figure 3. IS - 95 Broadband Performance @ Pout = 20 Watts Avg.
f, FREQUENCY (MHz)
Figure 4. IS - 95 Broadband Performance @ Pout = 2 Watts Avg.
20
−20
IDQ = 1425 mA
1150 mA
950 mA
19
700 mA
18
17
16
0.1
475 mA
VDD = 26 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two −Tone Measurements, 100 kHz Tone Spacing
1
10
100
1000
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
21
G ps , POWER GAIN (dB)
ARCHIVE INFORMATION
VDD = 26 Vdc, Pout = 20 W (Avg.), IDQ = 950 mA
N−CDMA IS−95 (Pilot, Sync, Paging, Traffic
Codes 8 through 13)
16
ARCHIVE INFORMATION
Gps
IRL, INPUT RETURN LOSS (dB)
20
ηD , DRAIN
EFFICIENCY (%)
50
ACPR (dBc), ALT (dBc)
G ps , POWER GAIN (dB)
22
−25
−30
1425 mA
−35
IDQ = 475 mA
−40
−45
1150 mA
−50
950 mA
−55
700 mA
−60
VDD = 26 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two −Tone Measurements, 100 kHz Tone Spacing
−65
−70
0.1
1
10
100
1000
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF5S9100MR1 MRF5S9100MBR1
RF Device Data
Freescale Semiconductor
5
58
Ideal
57
Pout, OUTPUT POWER (dBm)
−10
−20
3rd Order
−30
5th Order
−40
7th Order
−50
P3dB = 51.58 dBm (143 W)
56
55
54
P1dB = 50.71 dBm (117 W)
53
52
Actual
51
50
−60
VDD = 26 Vdc, Pout = 96 W (PEP), IDQ = 950 mA
Two −Tone Measurements, Center Frequency = 880 MHz
−70
0.1
VDD = 26 Vdc, IDQ = 950 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
Center Frequency = 880 MHz
49
48
1
10
100
28
29
30
31
32
33
34
35
36
Figure 8. Pulse CW Output Power versus
Input Power
−30
VDD = 26 Vdc, IDQ = 950 mA, f = 880 MHz
N−CDMA IS−95 (Pilot, Sync, Paging,
Traffic Codes 8 through 13)
45
40
−35
−40
35
−45
30
−50
ACPR
25
−55
Gps
20
−60
15
−65
10
−70
ηD
5
−75
ALT1
0
−80
1
10
100
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ALT1, CHANNEL POWER (dBm)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
ηD , DRAIN EFFICIENCY (%) G , POWER GAIN (dB)
ps
Pin, INPUT POWER (dBm)
50
38
37
TWO −TONE SPACING (MHz)
Pout, OUTPUT POWER (WATTS) AVG.
1010
IDQ = 950 mA
f = 880 MHz
19.5
19
18.5
20 V
24 V
18
32 V
16 V
17.5
MTTF FACTOR (HOURS x AMPS2)
20
109
ARCHIVE INFORMATION
0
Figure 9. Single - Carrier N - CDMA ACPR, Power
Gain, Efficiency and ALT1 versus Output Power
G ps , POWER GAIN (dB)
ARCHIVE INFORMATION
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
108
VDD = 12 V
17
0
30
60
90
120
150
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain versus Output Power
180
107
80
100
120
140
160
180
200
220
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 11. MTTF Factor versus Junction Temperature
MRF5S9100MR1 MRF5S9100MBR1
6
RF Device Data
Freescale Semiconductor
f = 895 MHz
Zload
f = 865 MHz
f = 865 MHz
f = 895 MHz
Zsource
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Zo = 5 Ω
VDD = 26 Vdc, IDQ = 950 mA, Pout = 20 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
865
3.0 - j1.8
1.4 - j0.7
880
2.8 - j1.9
1.5 - j0.6
895
2.7 - j1.7
1.5 - j0.5
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 12. Series Equivalent Source and Load Impedance
MRF5S9100MR1 MRF5S9100MBR1
RF Device Data
Freescale Semiconductor
7
PACKAGE DIMENSIONS
E1
B
A
2X
E3
GATE LEAD
DRAIN LEAD
D
D1
4X
e
4X
b1
aaa M C A
2X
2X
D2
c1
E
H
DATUM
PLANE
F
ZONE J
A
A1
2X
A2
E2
NOTE 7
E5
E4
4
D3
3
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
E5
BOTTOM VIEW
C
SEATING
PLANE
PIN 5
NOTE 8
1
2
CASE 1486 - 03
ISSUE C
TO - 270 WB - 4
PLASTIC
MRF5S9100MR1
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H−.
5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE “b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA
OF THE HEAT SLUG.
DIM
A
A1
A2
D
D1
D2
D3
E
E1
E2
E3
E4
E5
F
b1
c1
e
aaa
INCHES
MIN
MAX
.100
.104
.039
.043
.040
.042
.712
.720
.688
.692
.011
.019
.600
−−−
.551
.559
.353
.357
.132
.140
.124
.132
.270
−−−
.346
.350
.025 BSC
.164
.170
.007
.011
.106 BSC
.004
STYLE 1:
PIN 1.
2.
3.
4.
5.
MILLIMETERS
MIN
MAX
2.54
2.64
0.99
1.09
1.02
1.07
18.08
18.29
17.48
17.58
0.28
0.48
15.24
−−−
14
14.2
8.97
9.07
3.35
3.56
3.15
3.35
6.86
−−−
8.79
8.89
0.64 BSC
4.17
4.32
0.18
0.28
2.69 BSC
0.10
DRAIN
DRAIN
GATE
GATE
SOURCE
MRF5S9100MR1 MRF5S9100MBR1
8
RF Device Data
Freescale Semiconductor
MRF5S9100MR1 MRF5S9100MBR1
RF Device Data
Freescale Semiconductor
9
MRF5S9100MR1 MRF5S9100MBR1
10
RF Device Data
Freescale Semiconductor
MRF5S9100MR1 MRF5S9100MBR1
RF Device Data
Freescale Semiconductor
11
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© Freescale Semiconductor, Inc. 2006. All rights reserved.
RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical
characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further
information, see http://www.freescale.com or contact your Freescale sales representative.
For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp.
MRF5S9100MR1 MRF5S9100MBR1
Document Number: MRF5S9100
Rev. 4, 5/2006
12
RF Device Data
Freescale Semiconductor
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