Freescale Semiconductor
Technical Data
Document Number: MRF6S21140H
Rev. 5, 2/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN--PCS/cellular radio and WLL
applications.
• Typical 2--carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA,
Pout = 30 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 15.5 dB
Drain Efficiency — 27.5%
IM3 @ 10 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — --41 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 140 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S21140HR3
MRF6S21140HSR3
2110--2170 MHz, 30 W AVG., 28 V
2 x W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465B--03, STYLE 1
NI--880
MRF6S21140HR3
CASE 465C--02, STYLE 1
NI--880S
MRF6S21140HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +68
Vdc
Gate--Source Voltage
VGS
--0.5, +12
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
TC
150
°C
TJ
225
°C
Symbol
Value (2,3)
Unit
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 140 W CW
Case Temperature 75°C, 30 W CW
RθJC
0.35
0.38
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2004--2007, 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S21140HR3 MRF6S21140HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1200 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on)
0.1
0.21
0.3
Vdc
Crss
—
2
—
pF
Characteristic
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 30 W Avg., f1 = 2112.5 MHz, f2 =
2122.5 MHz, 2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz
Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
14.5
15.5
17.5
dB
Drain Efficiency
ηD
26
27.5
—
%
Intermodulation Distortion
IM3
—
--37
--35
dBc
ACPR
—
--41
--38
dBc
IRL
—
--15
--9
dB
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
MRF6S21140HR3 MRF6S21140HSR3
2
RF Device Data
Freescale Semiconductor
Z6
R1
VBIAS
VSUPPLY
R2
C5
C4
C3
C10
Z5
C12
+
C16
C13
R3
RF
INPUT
C17
Z1
Z2
Z3
Z4
C1
Z8
Z9
Z10
Z11
DUT
C19
C2
C6
C18
C9
Z12
Z13
RF
OUTPUT
C8
C7
Z7
C11
Z1
Z2
Z3
Z4
Z5
Z6, Z7
0.250″ x 0.083″ Microstrip
1.177″ x 0.083″ Microstrip
0.443″ x 0.083″ Microstrip
0.276″ x 0.787″ Microstrip
0.786″ x 0.083″ Microstrip
(quarter wave length for bias purpose)
0.833″ x 0.083″ Microstrip
(quarter wave length for supply purpose)
Z8
Z9
Z10
Z11, Z12
Z13
PCB
C14
C15
0.531″ x 1.000″ Microstrip
0.308″ x 0.083″ Microstrip
0.987″ x 0.083″ Microstrip
0.070″ x 0.220″ Microstrip
0.160″ x 0.083″ Microstrip
Taconic TLX8--0300, 0.030″, εr = 2.55
Figure 1. MRF6S21140HR3(HSR3) Test Circuit Schematic
Table 5. MRF6S21140HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C3, C8, C9, C10, C11
6.8 pF Chip Capacitors
ATC100B6R8CT500XT
ATC
C2
0.8 pF Chip Capacitor
ATC100B0R8BT500XT
ATC
C4
220 nF Chip Capacitor
VJ1812Y22YKXCAT
Vishay
C5, C12, C13, C14, C15
10 μF Chip Capacitors
C5750X5R1H106MT
TDK
C6, C19
0.2 pF Chip Capacitors
ATC100B0R2BT500XT
ATC
C7
0.5 pF Chip Capacitor
ATC100B0R5BT500XT
ATC
C16
220 μF, 63 V Electrolytic Capacitor, Radial
EMVY630ATR221MKE0S
Nippon Chemi--Con
C17, C18
0.1 pF Chip Capacitors
ATC100B0R1BT500XT
ATC
R1, R2
10 kΩ, 1/4 W Chip Resistors
CRCW12061002FKTA
Vishay
R3
10 Ω, 1/4 W Chip Resistor
CRCW120610R0FKTA
Vishay
MRF6S21140HR3 MRF6S21140HSR3
RF Device Data
Freescale Semiconductor
3
R2
VGS
R1
VDD
C10
C5
C4
C3
C16
C12 C13
C17
C1
C19
C2
CUT OUT AREA
R3
C6 C7
C9
C8
C18
C14 C15
C11
MRF6S21140H
Rev 0
Figure 2. MRF6S21140HR3(HSR3) Test Circuit Component Layout
MRF6S21140HR3 MRF6S21140HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
VDD = 28 Vdc, Pout = 30 W (Avg.),
15.4 IDQ = 1200 mA, 2--Carrier W--CDMA,
10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth,
15.3 PAR = 8.5 dB @ 0.01% Probability (CCDF)
26
Gps
--32
IRL
15.2
--36
IM3
ACPR --40
15.1
15
2060
28
ηD
2080
2100
2120
2140
2160
2180
2200
--44
2220
--12
--15
--18
--21
IRL, INPUT RETURN LOSS (dB)
Gps, POWER GAIN (dB)
15.5
ηD, DRAIN
EFFICIENCY (%)
30
IM3 (dBc), ACPR (dBc)
15.6
f, FREQUENCY (MHz)
Figure 3. 2--Carrier W--CDMA Broadband Performance @ Pout = 30 Watts Avg.
15
14.7
14.6
14.5
Gps
38
IRL
--24
IM3
--27
ACPR
2080
2100
2120
2140
2160
2180
2200
--30
--33
2220
--12
--15
--18
--21
IRL, INPUT RETURN LOSS (dB)
VDD = 28 Vdc, Pout = 60 W (Avg.),
IDQ = 1200 mA, 2--Carrier W--CDMA,
10 MHz Carrier Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
14.8
14.4
2060
40
ηD
IM3 (dBc), ACPR (dBc)
Gps, POWER GAIN (dB)
14.9
ηD, DRAIN
EFFICIENCY (%)
42
f, FREQUENCY (MHz)
Figure 4. 2--Carrier W--CDMA Broadband Performance @ Pout = 60 Watts Avg.
17
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
1500 mA
16
Gps, POWER GAIN (dB)
--20
IDQ = 1800 mA
1200 mA
15
900 mA
14
600 mA
13
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
12
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two--Tone Power Gain versus
Output Power
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
--25
--30
IDQ = 600 mA
--35
1800 mA
--40
--45
1500 mA
--50
1200 mA
900 mA
--55
--60
400
1
10
100
400
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S21140HR3 MRF6S21140HSR3
RF Device Data
Freescale Semiconductor
5
58
VDD = 28 Vdc, Pout = 140 W (PEP), IDQ = 1200 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
Pout, OUTPUT POWER (dBm)
--20
57
3rd Order
--30
5th Order
--40
--50
7th Order
Ideal
56
P3dB = 52.6 dBm (180 W)
55
54
P1dB = 52 dBm (158.5 W)
53
Actual
52
51
VDD = 28 Vdc, IDQ = 1200 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
50
49
--60
0.1
25
20
38
40
44
42
TWO--TONE SPACING (MHz)
Figure 8. Pulsed CW Output Power versus
Input Power
15
25_C
--30_C
--40
--45
85_C
85_C
25_C
--50
ACPR
--30_C
0
10
18
--25
85_C
--30
25_C IM3
--30_C
--35
Gps
5
1
36
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
TC = -- 30_C
10
34
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 1200 mA
25_C
f1 = 2135 MHz, f2 = 2145 MHz
2--Carrier W--CDMA, 10 MHz Carrier 85_C
Spacing. 3.84 MHz Channel
Bandwidth. PAR = 8.5 dB
ηD
@ 0.01% Probability (CCDF)
30
48
32
100
10
VDD = 28 Vdc
IDQ = 1200 mA
17 f = 2140 MHz
IM3 (dBc), ACPR (dBc)
35
1
60
25_C
85_C
TC = --30_C
25_C
Gps
15
--60
12
30
85_C
14
13
50
40
16
--55
100
--30_C
20
ηD
ηD, DRAIN EFFICIENCY (%)
--10
Gps, POWER GAIN (dB)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
10
1
10
100
Pout, OUTPUT POWER (WATTS) AVG.
Pout, OUTPUT POWER (WATTS) CW
Figure 9. 2--Carrier W--CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
0
1000
16
Gps, POWER GAIN (dB)
15
14
32 V
28 V
13
12
VDD = 24 V
11
IDQ = 1200 mA
f = 2140 MHz
10
9
0
50
100
150
200
250
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
MRF6S21140HR3 MRF6S21140HSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
MTTF (HOURS)
108
107
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 30 W Avg., and ηD = 27.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
Figure 12. MTTF versus Junction Temperature
W--CDMA TEST SIGNAL
100
+20
10
0
--10
1
(dB)
PROBABILITY (%)
3.84 MHz
Channel BW
+30
0.1
--20
--30
--40
0.01
--50
W--CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0.001
0.0001
0
2
4
6
--70
--ACPR in
+ACPR in
3.84 MHz BW 3.84 MHz BW
--IM3 in
3.84 MHz BW
--80
--25
--20
--60
8
10
PEAK--TO--AVERAGE (dB)
Figure 13. CCDF W--CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single--Carrier Test Signal
--15
--10
--5
0
5
10
+IM3 in
3.84 MHz BW
15
20
25
f, FREQUENCY (MHz)
Figure 14. 2-Carrier W-CDMA Spectrum
MRF6S21140HR3 MRF6S21140HSR3
RF Device Data
Freescale Semiconductor
7
f = 2200 MHz
Zload*
Zo = 25 Ω
f = 2080 MHz
f = 2200 MHz
Zsource
f = 2080 MHz
VDD = 28 Vdc, IDQ = 1200 mA, Pout = 30 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2080
7.53 -- j10.99
1.40 -- j3.03
2110
7.57 -- j10.67
1.37 -- j2.78
2140
7.58 -- j10.23
1.34 -- j2.52
2170
7.51 -- j9.73
1.32 -- j2.28
2200
7.44 -- j9.32
1.31 -- j2.06
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S21140HR3 MRF6S21140HSR3
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MRF6S21140HR3 MRF6S21140HSR3
RF Device Data
Freescale Semiconductor
9
MRF6S21140HR3 MRF6S21140HSR3
10
RF Device Data
Freescale Semiconductor
MRF6S21140HR3 MRF6S21140HSR3
RF Device Data
Freescale Semiconductor
11
MRF6S21140HR3 MRF6S21140HSR3
12
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
4
May 2007
Description
• Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
• Removed “Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications” bullet
as functionality is standard, p. 1
• Added “Optimized for Doherty Applications” bullet to Features section, p. 1
• Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
• Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q) and added “Measured in
Functional Test”, On Characteristics table, p. 2
• Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
• Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part
numbers, p. 3
• Adjusted scale for Fig. 5, Two--Tone Power Gain versus Output Power, to better match the device’s
capabilities, p. 5
• Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
• Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
• Added Product Documentation and Revision History, p. 10
5
Feb. 2010
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
• Added On Characteristic VDS(on) Min value, p. 2
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 13
MRF6S21140HR3 MRF6S21140HSR3
RF Device Data
Freescale Semiconductor
13
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MRF6S21140HR3 MRF6S21140HSR3
Document Number: MRF6S21140H
Rev. 5, 2/2010
14
RF Device Data
Freescale Semiconductor
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