MRF6VP121KHSR6

Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 3, 4/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications. • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128 μsec, Duty Cycle = 10% Power Gain — 20 dB Drain Efficiency — 56% • Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 Watts Peak Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • Designed for Push--Pull Operation • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. MRF6VP121KHR6 MRF6VP121KHSR6 965--1215 MHz, 1000 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFETs CASE 375D--05, STYLE 1 NI--1230 MRF6VP121KHR6 CASE 375E--04, STYLE 1 NI--1230S MRF6VP121KHSR6 PARTS ARE PUSH--PULL RFinA/VGSA 3 1 RFoutA/VDSA RFinB/VGSB 4 2 RFoutB/VDSB (Top View) Figure 1. Pin Connections Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS --0.5, +110 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Storage Temperature Range Tstg -- 65 to +150 °C TC 150 °C TJ 225 °C Case Operating Temperature Operating Junction Temperature (1,2) 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2009--2010. All rights reserved. RF Device Data Freescale Semiconductor MRF6VP121KHR6 MRF6VP121KHSR6 1 Table 2. Thermal Characteristics Characteristic Symbol Thermal Resistance, Junction to Case Case Temperature 67°C, 1000 W Pulsed, 128 μsec Pulse Width, 10% Duty Cycle, 50 Vdc, IDQ = 150 mA Case Temperature 62°C, Mode--S Pulse Train, 80 Pulses of 32 μsec On, 18 μsec Off, Repeated Every 40 msec, 6.4% Overall Duty Cycle, 50 Vdc, IDQ = 150 mA ZθJC Value (1,2) Unit °C/W 0.02 0.07 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1B (Minimum) Machine Model (per EIA/JESD22--A115) B (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit IGSS — — 10 μAdc V(BR)DSS 110 — — Vdc Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) IDSS — — 100 μAdc Gate Threshold Voltage (3) (VDS = 10 Vdc, ID = 1000 μAdc) VGS(th) 0.9 1.6 2.4 Vdc Gate Quiescent Voltage (4) (VDD = 50 Vdc, ID = 150 mAdc, Measured in Functional Test) VGS(Q) 1.5 2.2 3 Vdc Drain--Source On--Voltage (3) (VGS = 10 Vdc, ID = 2.7 Adc) VDS(on) — 0.15 — Vdc Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.27 — pF Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 86.7 — pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 539 — pF Characteristic Off Characteristics (3) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 165 mA) On Characteristics Dynamic Characteristics (3) Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (100 W Avg.), f = 1030 MHz, 128 μsec Pulse Width, 10% Duty Cycle Power Gain Gps 19 20 22 dB Drain Efficiency ηD 54 56 — % Input Return Loss IRL — --23 --9 dB 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 3. Each side of device measured separately. 4. Measurement made with device in push--pull configuration. (continued) MRF6VP121KHR6 MRF6VP121KHSR6 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Pulsed RF Performance — 785 MHz (In Freescale 785 MHz Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (100 W Avg.), f = 785 MHz, 128 μsec Pulse Width, 10% Duty Cycle Power Gain Gps — 18.9 — dB Drain Efficiency ηD — 57.8 — % Input Return Loss IRL — --16.6 — dB Pulsed RF Performance — 1030 MHz (In Freescale 1030 MHz Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (100 W Avg.), f = 1030 MHz, Mode--S Pulse Train, 80 Pulses of 32 μsec On, 18 μsec Off, Repeated Every 40 msec, 6.4% Overall Duty Cycle Power Gain Gps — 19.8 — dB Drain Efficiency ηD — 59.0 — % BDrp — 0.21 — dB Burst Droop Pulsed RF Performance — 1090 MHz (In Freescale 1090 MHz Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (100 W Avg.), f = 1090 MHz, 128 μsec Pulse Width, 10% Duty Cycle Power Gain Gps — 21.4 — dB Drain Efficiency ηD — 56.3 — % Input Return Loss IRL — --25.3 — dB MRF6VP121KHR6 MRF6VP121KHSR6 RF Device Data Freescale Semiconductor 3 VBIAS + C1 C2 C3 C4 C21 C22 + + C23 C24 VSUPPLY L1 BALUN 1 Z3 RF INPUT Z1 C13 R1 Z5 Z7 Z11 Z13 Z15 Z17 Z19 Z21 C18 Z9 RF Z23 OUTPUT C10 Z2 Z4 C9 Z6 Z8 C12 Z10 DUT C11 Z12 C15 C16 Z16 Z18 Z14 Z20 Z22 R2 C19 C14 VBIAS C17 L2 + C5 C6 C7 C20 C8 C25 Z1 Z2 Z3, Z4 Z5, Z6 Z7, Z8 Z9, Z10 Z11, Z12 BALUN 2 0.140″ x 0.083″ 0.300″ x 0.083″ 0.746″ x 0.220″ 0.075″ x 0.631″ 0.329″ x 0.631″ 0.326″ x 0.631″ 0.240″ x 0.631″ Z13, Z14 Z15, Z16 Z17, Z18 Z19, Z20 Z21, Z22 Z23 PCB C26 + + C27 C28 VSUPPLY 0.143″ x 0.631″ 0.135″ x 0.631″ 0.102″ x 0.632″ 0.130″ x 0.631″ 0.736″ x 0.215″ 0.410″ x 0.083″ Arlon CuClad 250GX--0300--55--22, 0.030″, εr = 2.55 Figure 2. MRF6VP121KHR6(HSR6) Test Circuit Schematic Table 5. MRF6VP121KHR6(HSR6) Test Circuit Component Designations and Values Part Description Manufacturer Part Number Balun 1, 2 Balun Anaren 3A412 Anaren C1, C5 22 μF, 25 V Tantalum Capacitors TPSD226M025R AVX C2, C6 2.2 μF, 50 V Chip Capacitors C1825C225J5RAC Kemet C3, C7 0.22 μF, 100 V Chip Capacitors C1210C224K1RAC Kemet C4, C8, C10, C11, C17, C18, C19, C20, C21, C25 36 pF Chip Capacitors ATC100B360JT500XT ATC C9 1.0 pF Chip Capacitor ATC100B1R0CT500XT ATC C12, C16 0.8--8.0 pF Variable Capacitors 27291SL Johanson C13, C14, C15 5.1 pF Chip Capacitors ATC100B5R1CT500XT ATC C22, C26 0.022 μF, 100 V Chip Capacitors C1825C223K1GAC Kemet C23, C24, C27, C28 470 μF, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp L1, L2 Inductors 3 Turn GA3094--AL Coilcraft R1, R2 1000 Ω, 1/4 W Chip Resistors CRCW12061001FKEA Vishay MRF6VP121KHR6 MRF6VP121KHSR6 4 RF Device Data Freescale Semiconductor C24 C3 C2 BALUN 1 C13 C12 C6 C8 C7 C15 CUT OUT AREA R2 C5 C21 R1 C11 -- C22 C4 C10 C9 C23 MRF6VP121KH Rev. 2 C1 BALUN 2 L1 C17 C18 C16 C19 C20 C14 L2 C25 C26 C27 -- C28 Figure 3. MRF6VP121KHR6(HSR6) Test Circuit Component Layout MRF6VP121KHR6 MRF6VP121KHSR6 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 22 21 Coss 100 Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc Crss 10 Gps, POWER GAIN (dB) C, CAPACITANCE (pF) Ciss 60 VDD = 50 Vdc IDQ = 150 mA f = 1030 MHz Pulse Width = 128 μsec Duty Cycle = 10% 20 50 Gps 40 30 19 18 20 ηD 10 17 16 1 0 10 20 40 30 50 Note: Each side of device measured separately. Figure 5. Pulsed Power Gain and Drain Efficiency versus Output Power 24 Gps, POWER GAIN (dB) P1dB = 1065 W (60.3 dBm) 20 P3dB = 1182 W (60.7 dBm) 19.5 19 18.5 18 500 VDD = 50 Vdc IDQ = 150 mA f = 1030 MHz Pulse Width = 128 μsec Duty Cycle = 10% 600 700 Actual 900 1000 1100 1200 1300 3000 mA 21 20 1500 mA 19 750 mA 18 375 mA 17 150 mA VDD = 50 Vdc f = 1030 MHz Pulse Width = 128 μsec Duty Cycle = 10% 10 1 1000 100 10000 Pout, OUTPUT POWER (WATTS) PULSED Pout, OUTPUT POWER (WATTS) PULSED Figure 6. Pulsed Power Gain versus Output Power Figure 7. Pulsed Power Gain versus Output Power 65 IDQ = 150 mA, f = 1030 MHz Pulse Width = 128 μsec Duty Cycle = 10% 20 19 18 VDD = 30 V 17 0 22 16 800 21 16 IDQ = 6000 mA 23 21 Pout, OUTPUT POWER (dBm) Gps, POWER GAIN (dB) 21.5 Gps, POWER GAIN (dB) 25 Ideal 20.5 0 10000 1000 100 Pout, OUTPUT POWER (WATTS) PULSED 22 22 10 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Figure 4. Capacitance versus Drain--Source Voltage 23 1 200 400 ηD, DRAIN EFFICIENCY (%) 1000 35 V 40 V 45 V 50 V 600 800 1000 1200 1400 60 55 TC = --30_C 50 45 40 20 25_C VDD = 50 Vdc IDQ = 150 mA f = 1030 MHz Pulse Width = 128 μsec Duty Cycle = 10% 85_C 25 30 35 40 Pout, OUTPUT POWER (WATTS) PULSED Pin, INPUT POWER (dBm) PULSED Figure 8. Pulsed Power Gain versus Output Power Figure 9. Pulsed Output Power versus Input Power 45 MRF6VP121KHR6 MRF6VP121KHSR6 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 22 Gps, POWER GAIN (dB) 70 VDD = 50 Vdc IDQ = 150 mA f = 1030 MHz Pulse Width = 128 μsec Duty Cycle = 10% 21 60 Gps 50 20 40 TC = --30_C 19 18 25_C 17 16 30 20 ηD 10 85_C 10 1 ηD, DRAIN EFFICIENCY (%) 23 0 10000 1000 100 Pout, OUTPUT POWER (WATTS) PULSED 109 109 108 108 MTTF (HOURS) MTTF (HOURS) Figure 10. Pulsed Power Gain and Drain Efficiency versus Output Power 107 106 105 107 106 105 104 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 1000 W Peak, Pulse Width = 128 μsec, Duty Cycle = 10%, and ηD = 56%. This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 1000 W Peak, Mode--S Pulse Train, Pulse Width = 32 μsec, Duty Cycle = 6.4%, and ηD = 59%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 11. MTTF versus Junction Temperature -128 μsec, 10% Duty Cycle Figure 12. MTTF versus Junction Temperature -Mode--S MRF6VP121KHR6 MRF6VP121KHSR6 RF Device Data Freescale Semiconductor 7 Zo = 5 Ω f = 1030 MHz Zload f = 1030 MHz Zsource VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak f MHz Zsource Ω Zload Ω 1030 3.93 + j0.09 1.54 + j1.42 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test -- -Z source Output Matching Network + Z load Figure 13. Series Equivalent Source and Load Impedance MRF6VP121KHR6 MRF6VP121KHSR6 8 RF Device Data Freescale Semiconductor C26 C25 MRF6VP121KH Rev. 2 C1 C3 C2 BALUN 1 C24 C23 C4 L1 BALUN 2 R1 C13 C12 C11 R2 C8 C6 C17 C18 C14 CUT OUT AREA C10 C19 C20 C21 C22 C15 C16 L2 C27 C7 C28 -- C9 C29 C30 C5 Figure 14. MRF6VP121KHR6(HSR6) Test Circuit Component Layout — 785 MHz Table 6. MRF6VP121KHR6(HSR6) Test Circuit Component Designations and Values — 785 MHz Part Description Manufacturer Part Number Balun 1, 2 Balun Anaren 3A412 Anaren C1, C5 22 μF, 25 V Tantalum Capacitors TPSD226M025R0200 AVX C2, C6 2.2 μF, 50 V Chip Capacitors C1825C225J5RAC--TU Kemet C3, C7 0.22 μF, 100 V Chip Capacitors C1210C224K1RAC--TU Kemet C4, C8, C10, C11, C19, C20, C21, C22, C23, C27 36 pF Chip Capacitors ATC100B360JT500XT ATC C9 8.2 pF Chip Capacitor ATC100B8R2CT500XT ATC C12 0.6--4.5 pF Variable Capacitor 27271SL Johanson C13 3.6 pF Chip Capacitor ATC100B3R6CT500XT ATC C14 10 pF Chip Capacitor ATC100B100JT500XT ATC C15, C16, C17, C18 5.1 pF Chip Capacitors ATC100B5R1CT500XT ATC C24, C28 0.022 μF, 100 V Chip Capacitors C1825C223K1GAC Kemet C25, C26, C29, C30 470 μF, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp L1, L2 Inductors 3 Turn GA3094--ALC Coilcraft R1, R2 1000 Ω, 1/4 W Chip Resistors CRCW12061K00FKEA Vishay PCB CuClad, 0.030″, εr = 2.55 250GX--0300--55--22 Arlon MRF6VP121KHR6 MRF6VP121KHSR6 RF Device Data Freescale Semiconductor 9 TYPICAL CHARACTERISTICS — 785 MHZ VDD = 50 Vdc 20 I = 150 mA DQ 19.5 f = 785 MHz Pulse Width = 128 μsec 19 Duty Cycle = 10% 18.5 18 60 55 50 45 40 Gps 17.5 35 30 ηD 17 25 16.5 20 16 15 15.5 10 100 1000 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 20.5 10 3000 Pout, OUTPUT POWER (WATTS) PULSED Figure 15. Pulsed Power Gain and Drain Efficiency versus Output Power MRF6VP121KHR6 MRF6VP121KHSR6 10 RF Device Data Freescale Semiconductor Zo = 5 Ω Zload f = 785 MHz Zsource f = 785 MHz VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak f MHz Zsource Ω Zload Ω 785 1.54 -- j0.46 2.79 + j1.10 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test -- -Z source Output Matching Network + Z load Figure 16. Series Equivalent Source and Load Impedance — 785 MHz MRF6VP121KHR6 MRF6VP121KHSR6 RF Device Data Freescale Semiconductor 11 -MRF6VP121KH Rev. 2 C3 C2 C21 C13 R1 C29 C12 C11 R2 C8 C6 C15 CUT OUT AREA C10 -- C22 C4 BALUN 1 C9 C23 BALUN 2 L1 C16 C17 C18 C19 C20 C14 L2 C25 C26 C7 C5 -- C1 C24 C27 C28 Figure 17. MRF6VP121KHR6(HSR6) Test Circuit Component Layout — 1090 MHz Table 7. MRF6VP121KHR6(HSR6) Test Circuit Component Designations and Values — 1090 MHz Part Description Manufacturer Part Number Balun 1, 2 Balun Anaren 3A412 Anaren C1, C5 22 μF, 25 V Tantalum Capacitors TPSD226M025R0200 AVX C2, C6 2.2 μF, 50 V 1825 Chip Capacitors C1825C225J5RAC--TU Kemet C3, C7 0.22 μF, 100 V Chip Capacitors C1210C224K1RAC--TU Kemet C4, C8, C17, C18, C19, C20, C21, C25 36 pF Chip Capacitors ATC100B360JT500XT ATC C9 1.0 pF Chip Capacitor ATC100B1R0BT500XT ATC C12, C16 0.8--8.0 pF Variable Capacitors 27291SL Johanson C10, C11, C13, C14, C15, C29 5.1 pF Chip Capacitors ATC100B5R1CT500XT ATC C22, C26 0.022 μF, 100 V Chip Capacitors C1825C223K1GAC Kemet C23, C24, C27, C28 470 μF, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp L1, L2 Inductors 3 Turn GA3094--ALC Coilcraft R1, R2 1000 Ω, 1/4 W Chip Resistors CRCW12061K00FKEA Vishay PCB CuClad, 0.030″, εr = 2.55 250GX--0300--55--22 Arlon MRF6VP121KHR6 MRF6VP121KHSR6 12 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — 1090 MHZ 60 VDD = 50 Vdc I = 150 mA 21 DQ f = 1090 MHz Pulse Width = 128 μsec 20 Duty Cycle = 10% 50 40 Gps 19 30 ηD 18 20 17 10 16 10 100 1000 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 22 0 3000 Pout, OUTPUT POWER (WATTS) PULSED Figure 18. Pulsed Power Gain and Drain Efficiency versus Output Power MRF6VP121KHR6 MRF6VP121KHSR6 RF Device Data Freescale Semiconductor 13 Zo = 5 Ω f = 1090 MHz f = 1090 MHz Zsource Zload VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak f MHz Zsource Ω Zload Ω 1090 2.98 + j3.68 1.51 + j2.02 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test -- -Z source Output Matching Network + Z load Figure 19. Series Equivalent Source and Load Impedance — 1090 MHz MRF6VP121KHR6 MRF6VP121KHSR6 14 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF6VP121KHR6 MRF6VP121KHSR6 RF Device Data Freescale Semiconductor 15 MRF6VP121KHR6 MRF6VP121KHSR6 16 RF Device Data Freescale Semiconductor MRF6VP121KHR6 MRF6VP121KHSR6 RF Device Data Freescale Semiconductor 17 MRF6VP121KHR6 MRF6VP121KHSR6 18 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 June 2009 • Initial Release of Data Sheet 1 June 2009 • Added Pulsed RF Performance tables for 785 MHz and 1090 MHz applications, p. 3 • Added Figs. 13 and 16, Test Circuit Component Layout -- 785 MHz and 1090 MHz, and Tables 6 and 7, Test Circuit Component Designations and Values -- 785 MHz and 1090 MHz, p. 9, 12 • Added Figs. 14 and 17, Pulsed Power Gain and Drain Efficiency versus Output Power -- 785 MHz and 1090 MHz, p. 10, 13 • Added Figs. 15 and 18, Series Equivalent Source and Load Impedance -- 785 MHz and 1090 MHz, p. 11, 14 2 Dec. 2009 • Added thermal data for 1030 MHz Mode--S application to Table 2, Thermal Characteristics, reporting of pulsed thermal data now shown using the ZθJC symbol, p. 2 • Added Typical Performances table for 1030 MHz Mode--S application, p. 3 • Added Fig. 12, MTTF versus Junction Temperature -- 1030 MHz Mode--S, p. 7 3 Apr. 2010 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 1 MRF6VP121KHR6 MRF6VP121KHSR6 RF Device Data Freescale Semiconductor 19 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009--2010. All rights reserved. MRF6VP121KHR6 MRF6VP121KHSR6 Document Number: MRF6VP121KH Rev. 3, 4/2010 20 RF Device Data Freescale Semiconductor