Freescale Semiconductor
Technical Data
Document Number: MRF8P23160WH
Rev. 0, 12/2011
RF Power Field Effect Transistors
MRF8P23160WHR3
MRF8P23160WHSR3
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for base station applications with wide instantaneous bandwidth
requirements covering frequencies from 2300 to 2400 MHz.
• Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts,
IDQA = 600 mA, VGSB = 1.2 Vdc, Pout = 30 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2300 MHz
13.9
37.1
7.9
--31.0
2350 MHz
14.1
38.3
7.7
--32.2
2400 MHz
13.8
38.3
7.4
--33.1
2300--2400 MHz, 30 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
• Capable of Handling 10:1 VSWR, @ 30 Vdc, 2350 MHz, 144 Watts CW (1)
Output Power (3 dB Input Overdrive from Rated Pout)
• Typical Pout @ 3 dB Compression Point ≃ 190 Watts (2)
CASE 465M--01, STYLE 1
NI--780--4
MRF8P23160WHR3
Features
• Designed for Wide Instantaneous Bandwidth Applications
• Designed for Wideband Applications that Require 100 MHz Signal Bandwidth
• Production Tested in a Symmetrical Doherty Configuration
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Large--Signal Load--Pull Parameters and Common Source
S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 14.
• NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 14.
CASE 465H--02, STYLE 1
NI--780S--4
MRF8P23160WHSR3
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
125
°C
Operating Junction Temperature (3,4)
TJ
225
°C
CW
129
0.48
W
W/°C
CW Operation @ TC = 25°C
Derate above 25°C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
3. Continuous use at maximum temperature will affect MTTF.
4. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2011. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF8P23160WHR3 MRF8P23160WHSR3
1
Table 2. Thermal Characteristics
Characteristic
Value (1,2)
Symbol
Thermal Resistance, Junction to Case
Case Temperature 80°C, 30 W CW, 28 Vdc, IDQA = 600 mA, VGGB = 2.4 Vdc, 2350 MHz
Case Temperature 101°C, 130 W CW(3), 28 Vdc, IDQA = 600 mA, VGGB = 2.4 Vdc, 2350 MHz
RθJC
Unit
°C/W
0.69
0.43
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
5
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 252 μAdc)
VGS(th)
1.2
1.9
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDA = 600 mAdc)
VGSA(Q)
—
2.8
—
Vdc
Fixture Gate Quiescent Voltage (4,5)
(VDD = 28 Vdc, IDA = 600 mAdc, Measured in Functional Test)
VGGA(Q)
4.1
5.5
7.1
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 3.0 Adc)
VDS(on)
0.1
0.24
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics
Functional Tests (6,7,8) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 600 mA, VGSB = 1.2 Vdc, Pout =
30 W Avg., f = 2320 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
ACPR measured on 3.84 MHz Channel Bandwidth @ ±5 MHz Offsett.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Gps
12.0
14.1
15.0
dB
ηD
32.0
36.5
—
%
PAR
7.2
7.8
—
dB
ACPR
—
--32.2
--28.0
dBc
(6,8) (In
Typical Broadband Performance
Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 600 mA, VGSB = 1.2 Vdc,
Pout = 30 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2300 MHz
13.9
37.1
7.9
--31.0
2350 MHz
14.1
38.3
7.7
--32.2
2400 MHz
13.8
38.3
7.4
--33.1
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4. Each side of device measured separately.
5. VGG = 2.0 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistor divider network on the board. Refer to Test Fixture
Layout.
6. VDDA and VDDB must be tied together and powered by a single DC power supply.
7. Part internally matched both on input and output.
8. Measurement made with device in a Symmetrical Doherty configuration
(continued)
MRF8P23160WHR3 MRF8P23160WHSR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 600 mA, VGSB = 1.2 Vdc,
2300--2400 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
150 (2)
—
W
Pout @ 3 dB Compression Point (3)
P3dB
—
190
—
W
IMD Symmetry @ 28 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
150
—
MHz
Gain Flatness in 100 MHz Bandwidth @ Pout = 30 W Avg.
GF
—
0.6
—
dB
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.015
—
dB/°C
∆P1dB
—
0.017
—
dB/°C
Output Power Variation over Temperature
(--30°C to +85°C) (2)
102
—
MHz
—
1. Measurement made with device in a Symmetrical Doherty configuration.
2. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
3. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
MRF8P23160WHR3 MRF8P23160WHSR3
RF Device Data
Freescale Semiconductor, Inc.
3
R2
VDDA
VGGA C16
C18
R3
C22
C19
C14
R6
C8
C10
C6
C3
Z1
C12
C1
CUT OUT AREA
C
C2
R1
C7
C4
C13
P
C5
C11
C15
R7 C9
C17
C20
C23
R4
VGGB
VDDB
R5
C21
Note: VDDA and VDDB must be tied together and powered by a single DC power supply.
Figure 2. MRF8P23160WHR3(WHSR3) Test Circuit Component Layout
Table 5. MRF8P23160WHR3(WHSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C4, C5
0.2 pF Chip Capacitors
ATC600F0R2BT250XT
ATC
C2, C3
0.3 pF Chip Capacitors
ATC600F0R3BT250XT
ATC
C6
3.3 pF Chip Capacitor
ATC600F3R3BT250XT
ATC
C7
5.6 pF Chip Capacitor
ATC600F5R6BT250XT
ATC
C8, C9, C12, C13
6.8 pF Chip Capacitors
ATC600F6R8BT250XT
ATC
C10, C11
8.2 pF Chip Capacitors
ATC600F8R2BT250XT
ATC
C14, C15
330 nF, 50 V Chip Capacitors
C3225X7R2A334KT
TDK
C16, C17, C18, C19,
C20, C21
10 μF, 100 V Chip Capacitors
C3225X7R2A106KT
TDK
C22, C23
220 μF, 100 V Electrolytic Capacitor
EEV--FK2A221M
Panasonic--ECG
R1
50 Ω, 10 W Chip Resistor
CW12010T0050GBK
ATC
R2, R3, R4, R5
390 Ω, 1/4 W Chip Resistors
CRCW1206390FKEA
Vishay
R6, R7
4.75 Ω, 1/4 W Chip Resistors
CRCW12064R75FKEA
Vishay
Z1
2300--2700 MHz 90°, 3 dB Chip Hybrid Coupler
1P603S
Anaren
PCB
0.020″, εr = 3.5
RF35A2
Taconic
MRF8P23160WHR3 MRF8P23160WHSR3
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
39
ηD
37
14.4
35
Gps
14.2
14
33
--30
--2
13.8
--30.4
--2.2
13.6
--30.8
ACPR
PARC
13.4 3.84 MHz Channel Bandwidth
13.2 Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
13
2290 2305 2320 2335 2350
--31.2
--31.6
2365
2380
2395
ACPR (dBc)
Gps, POWER GAIN (dB)
ηD, DRAIN
EFFICIENCY (%)
41
VDD = 28 Vdc, Pout = 30 W (Avg.), IDQA = 600 mA
14.8 V
GSB = 1.2 Vdc, Single--Carrier W--CDMA
14.6
--2.4
--2.6
--2.8
--32
2410
PARC (dB)
15
--3
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 30 Watts Avg.
--20
IM3--U
--30
IM3--L
IM5--L
--40
IM7--U
IM7--L
--50
IM5--U
VDD = 28 Vdc, Pout = 28 W (PEP)
IDQA = 600 mA, VGSB = 1.2 Vdc
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2350 MHz
--60
--70
1
10
300
100
TWO--TONE SPACING (MHz)
14.5
0
14
13.5
13
12.5
12
VDD = 28 Vdc, IDQA = 600 mA, VGSB = 1.2 Vdc, f = 2350 MHz
Single--Carrier W--CDMA, 3.84 MHz, Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
Gps
--1
60
--23
50
--25
40
ηD
--2
--1 dB = 15 W
--3
20
PARC
--2 dB = 24.5 W
--4
--5
30
ACPR
--3 dB = 36 W
10
20
30
40
50
--27
--29
ACPR (dBc)
1
ηD, DRAIN EFFICIENCY (%)
15
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
--31
10
--33
0
--35
60
Pout, OUTPUT POWER (WATTS)
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8P23160WHR3 MRF8P23160WHSR3
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
ηD
14
60
0
50
--10
40
ACPR
2300 MHz
2400 MHz
2350 MHz
12
10
30
20
2300 MHz
8
Gps
2400 MHz 2350 MHz
0
1
10
10
0
200
100
--20
--30
--40
ACPR (dBc)
Gps, POWER GAIN (dB)
VDD = 28 Vdc, IDQA = 600 mA, VGSB = 1.2 Vdc
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
16 Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
ηD, DRAIN EFFICIENCY (%)
18
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
18
15
GAIN (dB)
12
9
6
VDD = 28 Vdc
Pin = 0 dBm
IDQA = 600 mA
VGSB = 1.2 Vdc
3
0
2000
2075
2150
2225
2300
2375
2450
2525
2600
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
2
4
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
8
10
PEAK--TO--AVERAGE (dB)
Figure 8. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
12
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 9. Single--Carrier W--CDMA Spectrum
MRF8P23160WHR3 MRF8P23160WHSR3
6
RF Device Data
Freescale Semiconductor, Inc.
VDD = 28 Vdc, IDQA = 600 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Output Power
P1dB
P3dB
f
(MHz)
Zsource
(Ω)
Zload (1)
(Ω)
(dBm)
(W)
ηD (%)
(dBm)
(W)
ηD (%)
2300
15.8 -- j13.8
5.58 -- j10.3
49.8
95
47.6
50.8
121
57.1
2350
19.8 -- j7.63
5.70 -- j10.4
49.7
93
48.2
50.7
119
56.1
2400
16.0 + j0.38
5.96 -- j10.5
49.7
92
49.0
50.7
118
55.8
(1) Load impedance for optimum P1dB power.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Zsource
Zload
Figure 10. Carrier Side Load Pull Performance — Maximum P1dB Tuning
VDD = 28 Vdc, IDQA = 600 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
P3dB
f
(MHz)
Zsource
(Ω)
Zload (1)
(Ω)
(dBm)
(W)
ηD (%)
(dBm)
(W)
ηD (%)
2300
15.8 -- j13.8
6.54 -- 4.70
48.3
67
57.1
49.6
91
59.4
2350
19.8 -- j7.63
5.70 -- 5.65
48.3
68
56.1
49.4
86
58.5
2400
16.0 + j0.38
5.50 -- 6.23
48.3
68
55.8
49.7
92
58.0
(1) Load impedance for optimum P1dB efficiency.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Zsource
Zload
Figure 11. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning
MRF8P23160WHR3 MRF8P23160WHSR3
RF Device Data
Freescale Semiconductor, Inc.
7
PACKAGE DIMENSIONS
MRF8P23160WHR3 MRF8P23160WHSR3
8
RF Device Data
Freescale Semiconductor, Inc.
MRF8P23160WHR3 MRF8P23160WHSR3
RF Device Data
Freescale Semiconductor, Inc.
9
MRF8P23160WHR3 MRF8P23160WHSR3
10
RF Device Data
Freescale Semiconductor, Inc.
MRF8P23160WHR3 MRF8P23160WHSR3
RF Device Data
Freescale Semiconductor, Inc.
11
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for MRF8P23160WH and MRF8P23160WHS parts will be available for 2 years after release of
MRF8P23160WH and MRF8P23160WHS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be
delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5
tape and reel option will be offered MRF8P23160WH and MRF8P23160WHS in the R3 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Dec. 2011
Description
• Initial Release of Data Sheet
MRF8P23160WHR3 MRF8P23160WHSR3
12
RF Device Data
Freescale Semiconductor, Inc.
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MRF8P23160WHR3 MRF8P23160WHSR3
Document
Number:
RF
Device
Data MRF8P23160WH
Rev. 0, 12/2011
Freescale
Semiconductor, Inc.
13
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