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MRF8S18260HR6

MRF8S18260HR6

  • 厂商:

    NXP(恩智浦)

  • 封装:

    SOT-1110A

  • 描述:

    FET RF 2CH 65V 1.81GHZ NI1230-8

  • 数据手册
  • 价格&库存
MRF8S18260HR6 数据手册
Document Number: MRF8S18260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S18260HR6 MRF8S18260HSR6 N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Performance: VDD = 30 Volts, IDQ = 1600 mA, Pout = 74 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) 1805 MHz 17.9 31.6 6.0 --35.0 1840 MHz 17.9 31.9 6.0 --36.0 1880 MHz 17.9 32.5 5.9 --36.0 1805--1880 MHz, 74 W AVG., 30 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs • Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 374 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) • Typical Pout @ 1 dB Compression Point ≃ 260 Watts CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • Optimized for Doherty Applications • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. CASE 375I--04 NI--1230--8 MRF8S18260HR6 CASE 375J--03 NI--1230S--8 MRF8S18260HSR6 Table 1. Maximum Ratings N.C. 1 Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C CW 420 3.5 W W/°C CW Operation @ TC = 25°C Derate above 25°C 8 VBW RFin/VGS 2 7 RFout/VDS RFin/VGS 3 6 RFout/VDS 5 VBW N.C. 4 (Top View) Figure 1. Pin Connections Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 81°C, 74 W CW, 30 Vdc, IDQ = 1600 mA, 1805 MHz Case Temperature 88°C, 260 W CW(4), 30 Vdc, IDQ = 1600 mA, 1805 MHz Symbol RθJC Value (2,3) 0.27 0.26 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. © Freescale Semiconductor, Inc., 2010, 2012. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MRF8S18260HR6 MRF8S18260HSR6 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) IV Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 μAdc) VGS(th) 1.1 1.9 2.6 Vdc Gate Quiescent Voltage (VDS = 30 Vdc, ID = 1600 mA) VGS(Q) — 2.6 — Vdc Fixture Gate Quiescent Voltage (VDD = 30 Vdc, ID = 1600 mA, Measured in Functional Test) VGG(Q) 4.3 5.1 5.8 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 4 Adc) VDS(on) 0.1 0.15 0.3 Vdc Characteristic Off Characteristics (1) On Characteristics (1) Functional Tests (1,2) (In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 1600 mA, Pout = 74 W Avg., f = 1805 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Drain Efficiency Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps 16.8 17.9 19.0 dB ηD 29.0 31.6 — % PAR 5.4 6.0 — dB ACPR — --35.0 --32.0 dBc IRL — --19 --7 dB Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 1600 mA, Pout = 74 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) IRL (dB) 1805 MHz 17.9 31.6 6.0 --35.0 --19 1840 MHz 17.9 31.9 6.0 --36.0 --18 1880 MHz 17.9 32.5 5.9 --36.0 --8 1. Gates (Pins 2, 3) and drains (Pins 6, 7) are connected internally. 2. Part internally matched both on input and output. (continued) MRF8S18260HR6 MRF8S18260HSR6 2 RF Device Data Freescale Semiconductor, Inc. Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 1600 mA, 1805--1880 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 260 — — 21 — W IMD Symmetry @ 100 W PEP, Pout where IMD Third Order Intermodulation  30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — 64 — MHz Gain Flatness in 75 MHz Bandwidth @ Pout = 74 W Avg. GF — 0.4 — dB Gain Variation over Temperature (--30°C to +85°C) ∆G — 0.011 — dB/°C ∆P1dB — 0.01 — dB/°C Output Power Variation over Temperature (--30°C to +85°C) (1) MHz 1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. MRF8S18260HR6 MRF8S18260HSR6 RF Device Data Freescale Semiconductor, Inc. 3 C24 C11 C9 C7 C20 R6 C26 R2 R4 C18 C3 R1 C2 CUT OUT AREA C5 C1 C6 C4 C16 C13 C15 C14 C17 MRF8S18260H/HS Rev. 2 C19 R3 R5 C22 C27 C21 C23 R7 C10 C12 C8 C25 Figure 2. MRF8S18260HR6(HSR6) Test Circuit Component Layout Table 5. MRF8S18260HR6(HSR6) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 2.2 pF Chip Capacitor ATC600F2R2BT250XT ATC C2, C7, C8, C14, C20, C21 15 pF Chip Capacitors ATC600F150JT250XT ATC C3, C4, C5, C6 C16, C17, C18, C19 1.0 pF Chip Capacitors ATC600F1R0BT250XT ATC C9, C10, C22, C23 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C11, C12 47 μF, 35 V Electrolytic Capacitors 476KXM050M Illinois Capacitor C13 0.6 pF Chip Capacitor ATC600F0R6BT250XT ATC C15 0.4 pF Chip Capacitor ATC600F0R4BT250XT ATC C24, C25 470 μF, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp C26, C27 6.8 μF Chip Capacitors C4532X7RIH685K TDK R1 2 kΩ, 1/4 W Chip Resistor CRCW12062k00FKEA Vishay R2, R3 4.75 Ω, 1/4 W Chip Resistors CRCW12064R75FKEA Vishay R4, R5, R6, R7 1 kΩ, 1/4 W Chip Resistors CRCW12061K00FKEA Vishay PCB 0.020″, εr = 3.5 RO4350B Rogers MRF8S18260HR6 MRF8S18260HSR6 4 RF Device Data Freescale Semiconductor, Inc. 33 32 18 31 Gps 17.8 PARC 17.6 17.4 1800 1820 --5 --37 ACPR 1780 --34 --36 17 16.8 1760 --0 --35 IRL 17.2 --33 1840 1860 1880 1900 --10 --15 --20 --25 --38 1920 --1.2 --1.4 --1.6 --1.8 --2 PARC (dB) 18.2 34 IRL, INPUT RETURN LOSS (dB) 18.4 Gps, POWER GAIN (dB) 35 VDD = 30 Vdc, Pout = 74 W (Avg.), IDQ = 1600 mA Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ ηD 0.01% Probability on CCDF 18.6 ACPR (dBc) 18.8 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS --2.2 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 3. Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 74 Watts Avg. --10 VDD = 30 Vdc, Pout = 100 W (PEP), IDQ = 1600 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 1840 MHz --20 IM3--U --30 IM3--L --40 IM5--U IM5--L --50 IM7--L IM7--U --60 1 10 100 TWO--TONE SPACING (MHz) 18.4 0 18.2 18 17.8 17.6 17.4 Gps VDD = 30 Vdc, IDQ = 1600 mA, f = 1840 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 30 50 --25 70 90 30 20 ηD --4 --5 --3 dB = 115 W --2 dB = 85 W --3 50 40 --1 dB = 60 W --2 --20 ACPR PARC --1 60 110 --30 --35 --40 10 --45 0 --50 130 ACPR (dBc) 1 ηD, DRAIN EFFICIENCY (%) 18.6 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) Figure 4. Intermodulation Distortion Products versus Two--Tone Spacing Pout, OUTPUT POWER (WATTS) Figure 5. Output Peak--to--Average Ratio Compression (PARC) versus Output Power MRF8S18260HR6 MRF8S18260HSR6 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS Gps, POWER GAIN (dB) 18 Gps 1880 MHz 60 0 50 --10 ηD VDD = 30 Vdc, IDQ = 1600 mA, Single--Carrier 17 W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 40 16 30 1880 MHz 1840 MHz 15 ACPR 1805 MHz 1880 MHz 14 10 1840 MHz 1805 MHz 13 1 20 10 0 300 100 --20 --30 --40 ACPR (dBc) 1840 MHz 1805 MHz ηD, DRAIN EFFICIENCY (%) 19 --50 --60 Pout, OUTPUT POWER (WATTS) AVG. Figure 6. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 10 24 5 Gain 16 0 12 --5 IRL (dB) GAIN (dB) 20 IRL --10 8 VDD = 30 Vdc Pin = 0 dBm IDQ = 1600 mA 4 0 1400 1500 1600 1700 --15 1800 1900 2000 2100 --20 2200 f, FREQUENCY (MHz) Figure 7. Broadband Frequency Response W--CDMA TEST SIGNAL 100 10 0 --10 Input Signal --30 0.1 0.01 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0.001 0.0001 3.84 MHz Channel BW --20 1 (dB) PROBABILITY (%) 10 0 1 2 3 4 5 6 --40 --50 --60 +ACPR in 3.84 MHz Integrated BW --ACPR in 3.84 MHz Integrated BW --70 --80 7 8 9 PEAK--TO--AVERAGE (dB) Figure 8. CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal 10 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 9. Single--Carrier W--CDMA Spectrum MRF8S18260HR6 MRF8S18260HSR6 6 RF Device Data Freescale Semiconductor, Inc. VDD = 30 Vdc, IDQ = 1600 mA, Pout = 74 W Avg. f MHz Zsource Ω Zload Ω 1760 2.81 -- j3.85 0.90 -- j1.84 1780 2.58 -- j3.93 0.90 -- j1.75 1800 2.33 -- j3.97 0.90 -- j1.67 1820 2.08 -- j3.95 0.90 -- j1.58 1840 1.85 -- j3.91 0.90 -- j1.50 1860 1.63 -- j3.83 0.91 -- j1.41 1880 1.43 -- j3.73 0.91 -- j1.34 1900 1.25 -- j3.61 0.92 -- j1.26 1920 1.09 -- j3.48 0.93 -- j1.18 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 10. Series Equivalent Source and Load Impedance MRF8S18260HR6 MRF8S18260HSR6 RF Device Data Freescale Semiconductor, Inc. 7 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS 60 VDD = 30 Vdc, IDQ = 1600 mA, Pulsed CW, 10 μsec(on) 10% Duty Cycle Ideal Pout, OUTPUT POWER (dBm) 59 58 57 1805 MHz 56 55 Actual 54 1880 MHz 53 1845 MHz 52 1845 MHz 51 1880 MHz 50 49 30 31 32 33 34 36 35 38 37 39 40 41 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 30 V P1dB P3dB f (MHz) Watts dBm Watts dBm 1805 302 54.8 363 55.6 1845 324 55.1 389 55.9 1880 302 54.8 389 55.9 Test Impedances per Compression Level f (MHz) Zsource Ω Zload Ω 1805 P1dB 1.14 -- j3.12 0.75 -- j0.93 1845 P1dB 1.61 -- j3.61 0.58 -- j0.10 1880 P1dB 2.93 -- j3.80 0.51 -- j1.14 Figure 11. Pulsed CW Output Power versus Input Power @ 30 V MRF8S18260HR6 MRF8S18260HSR6 8 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS MRF8S18260HR6 MRF8S18260HSR6 RF Device Data Freescale Semiconductor, Inc. 9 MRF8S18260HR6 MRF8S18260HSR6 10 RF Device Data Freescale Semiconductor, Inc. MRF8S18260HR6 MRF8S18260HSR6 RF Device Data Freescale Semiconductor, Inc. 11 MRF8S18260HR6 MRF8S18260HSR6 12 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Sept. 2010 • Initial Release of Data Sheet 1 Feb. 2012 • Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD ratings are characterized during new product development but are not 100% tested during production. ESD ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive devices, p. 2 • Replaced Case Outline 375I--03, Issue B with 375I--04, Issue C, p. 1, 9, 10. On Sheet 2, changed dimension F in mm from 0.1--0.18 to 0.10--0.18, changed dimension U in mm from 0.89--1.02 to 0.89--1.14, changed dimension W3 in mm from 12.47--12.72 to 12.47--12.73. • Replaced Case Outline 375J--02, Issue A with 375J--03, Issue B, p. 1, 11, 12. On Sheet 2, changed dimension A in mm from 32.13--32.38 to 32.13--32.39, changed dimension F in mm from 0.1--0.18 to 0.10--0.18, changed dimension U in mm from 8.89--11.43 to 0.89--1.14. MRF8S18260HR6 MRF8S18260HSR6 RF Device Data Freescale Semiconductor, Inc. 13 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1--8--1, Shimo--Meguro, Meguro--ku, Tokyo 153--0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 100022 China +86 10 5879 8000 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2010, 2012. All rights reserved. MRF8S18260HR6 MRF8S18260HSR6 Document Number: MRF8S18260H Rev. 1, 2/2012 14 RF Device Data Freescale Semiconductor, Inc.
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