MRFG35005MR5

Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 3, 1/2006 Replaced by MRFG35005NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MRFG35005MT1 Gallium Arsenide PHEMT 3.5 GHz, 4.5 W, 12 V POWER FET GaAs PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 80 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power — 450 mWatt Power Gain — 11 dB Efficiency — 25% • 4.5 Watts P1dB @ 3.55 GHz • Excellent Phase Linearity and Group Delay Characteristics • High Gain, High Efficiency and High Linearity • In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum Ratings Rating Drain - Source Voltage Symbol Value Unit VDSS 15 Vdc (2) Total Device Dissipation @ TC = 25°C Derate above 25°C PD 10.5 0.07 (2) W W/°C Gate - Source Voltage VGS -5 Vdc RF Input Power Pin 30 dBm Storage Temperature Range Tstg - 65 to +150 °C Channel Temperature (1) Tch 175 °C Operating Case Temperature Range TC - 20 to +85 °C Symbol Value Unit RθJC 14.2 (2) °C/W ARCHIVE INFORMATION ARCHIVE INFORMATION RF Power Field Effect Transistor Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Class AB Table 3. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 1 260 °C 1. For reliable operation, the operating channel temperature should not exceed 150°C. 2. Simulated.  Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRFG35005MT1 1 ARCHIVE INFORMATION Characteristic Symbol Min Typ Max Unit Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) IDSS — 1.7 — Adc Off State Leakage Current (VGS = - 0.4 Vdc, VDS = 0 Vdc) IGSS — < 1.0 100 µAdc Off State Drain Current (VDS = 12 Vdc, VGS = - 2.5 Vdc) IDSO — — 600 µAdc Off State Current (VDS = 28.5 Vdc, VGS = - 2.5 Vdc) IDSX — < 1.0 9 mAdc Gate - Source Cut - off Voltage (VDS = 3.5 Vdc, IDS = 8.7 mA) VGS(th) - 1.2 - 0.9 - 0.7 Vdc Quiescent Gate Voltage (VDS = 12 Vdc, ID = 80 mA) VGS(Q) - 1.1 - 0.8 - 0.6 Vdc Power Gain (VDD = 12 Vdc, IDQ = 80 mA, f = 3.55 GHz) Gps 10 11 — dB Output Power, 1 dB Compression Point (VDD = 12 Vdc, IDQ = 80 mA, f = 3.55 GHz) P1dB — 4.5 — W hD 22 25 — % ACPR — - 42 - 39 dBc Drain Efficiency (VDD = 12 Vdc, IDQ = 80 mA, Pout = 450 mW Avg., f = 3.55 GHz) Adjacent Channel Power Ratio (VDD = 12 Vdc, Pout = 450 mW Avg., IDQ = 80 mA, f = 3.55 GHz, W - CDMA, 8.5 P/A @ 0.01% Probability, 64 CH, 3.84 MCPS) ARCHIVE INFORMATION Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) MRFG35005MT1 2 RF Device Data Freescale Semiconductor VGS VDD C11 C10 C9 C8 C7 C6 C5 C16 C17 C18 C19 C20 C21 C22 R1 C3 C4 C14 C15 RF INPUT C2 Z1 ARCHIVE INFORMATION Z15 Z2 Z3 C12 Z4 C13 Z6 Z7 Z8 Z9 Z10 Z11 RF OUTPUT C23 Z12 Z13 Z14 Z16 Z17 C1 Z18 C24 C29 Z1, Z18 Z2 Z3 Z4 Z5, Z15 Z6, Z8, Z10 Z7, Z9 0.125″ 0.435″ 0.298″ 0.336″ 0.527″ 0.050″ 0.125″ C28 C27 x 0.044″ Microstrip x 0.044″ Microstrip x 0.254″ Microstrip x 0.590″ Microstrip x 0.015″ Microstrip x 0.025″ Microstrip x 0.025″ Microstrip C26 Z11 Z12 Z13 Z14 Z16 Z17 PCB C25 0.400″ x 0.081″ Microstrip 0.120″ x 0.408″ Microstrip 0.259″ x 0.058″ Microstrip 0.269″ x 0.348″ Microstrip 0.149″ x 0.062″ Microstrip 0.553″ x 0.044″ Microstrip Rogers 4350, 20 mil, εr = 3.5 Figure 1. 3.5 GHz Test Circuit Schematic Table 5. 3.5 GHz Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C24 7.5 pF Chip Capacitors 100A7R5JP150X ATC C2 0.4 pF Chip Capacitor (0805) 08051J0R4BBT AVX C3, C4, C14, C15 3.9 pF Chip Capacitors (0805) 08051J3R9BBT AVX C5, C16 10 pF Chip Capacitors 100A100JP500X ATC C6, C17 100 pF Chip Capacitors 100A101JP500X ATC C7, C18 100 pF Chip Capacitors 100B101JP500X ATC C8, C19 1000 pF Chip Capacitors 100B102JP500X ATC C9, C20 3.9 µF Chip Capacitors ATC C10, C21 0.1 µF Chip Capacitors ATC C11, C22 22 µF, 35 V Tantalum Surface Mount Capacitors C12, C28 0.1 pF Chip Capacitors (0805) 08051J0R1BBT AVX C13, C26, C27 0.3 pF Chip Capacitors (0805) 08051J0R3BBT AVX C23 1.0 pF Chip Capacitor (0805) 08051J1R0BBT AVX C25 1.2 pF Chip Capacitor (0805) 08051J1R2BBT AVX C29 0.9 pF Chip Capacitor (0805) 08051J0R9BBT AVX R1 100 W Chip Resistor Newark ARCHIVE INFORMATION Z5 Newark MRFG35005MT1 RF Device Data Freescale Semiconductor 3 C7 C18 C6 C11 C10 C9 C5 C8 C17 R1 C19 C20 C21 C22 C16 C4 C14 C12 C15 C13 ARCHIVE INFORMATION C2 C23 C1 C24 C25 C29 C28 C27 C26 MRFG35005M Rev 1 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 3.5 GHz Test Circuit Component Layout ARCHIVE INFORMATION C3 MRFG35005MT1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS −10 IRL VDS = 12 Vdc, IDQ = 85 mA f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA ΓS = 0.868é−115.15_, ΓL = 0.764é−139.11_ −30 −40 −40 ACPR −50 −60 0.01 −50 −60 1 0.1 Pout, OUTPUT POWER (WATTS) Figure 3. W - CDMA ACPR and Input Return Loss versus Output Power 17.5 15 40 VDS = 12 Vdc, IDQ = 85 mA f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA ΓS = 0.868é−115.18_, ΓL = 0.764é−139.11_ PAE 35 30 GT 12.5 25 10 20 7.5 15 5 10 2.5 5 0 PAE, POWER ADDED EFFICIENCY (%) 20 0 0.01 0.1 1 Pout, OUTPUT POWER (WATTS) Figure 4. Transducer Gain and Power Added Efficiency versus Output Power NOTE: All data is referenced to package lead interface. ΓS and ΓL are the impedances presented to the DUT. All data is generated from load pull, not from the test circuit shown. ARCHIVE INFORMATION −30 ACPR (dBc) −20 −20 G T , TRANSDUCER GAIN (dB) ARCHIVE INFORMATION IRL, INPUT RETURN LOSS (dB) −10 MRFG35005MT1 RF Device Data Freescale Semiconductor 5 S11 S21 S12 S22 f GHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 0.50 0.903 - 171.71 7.441 83.44 0.029 4.18 0.604 - 171.44 0.55 0.903 - 173.53 6.807 81.55 0.030 3.31 0.603 - 172.51 0.60 0.901 - 175.37 6.268 79.64 0.030 2.49 0.602 - 173.76 0.65 0.901 - 177.11 5.817 77.76 0.030 1.53 0.602 - 175.04 0.70 0.902 - 178.58 5.441 75.93 0.030 0.64 0.602 - 176.15 0.75 0.900 179.95 5.096 74.17 0.030 - 0.21 0.600 - 177.32 0.80 0.901 178.58 4.804 72.37 0.030 - 0.90 0.600 - 178.45 0.85 0.901 177.36 4.516 70.46 0.030 - 1.80 0.600 - 179.44 0.90 0.899 176.17 4.293 68.89 0.030 - 2.30 0.599 179.38 0.95 0.899 174.93 4.089 67.19 0.030 - 3.17 0.600 178.20 1.00 0.901 173.84 3.900 65.58 0.030 - 4.01 0.600 177.19 1.05 0.900 172.74 3.730 63.88 0.030 - 4.63 0.600 176.10 1.10 0.899 171.57 3.567 62.18 0.031 - 5.38 0.600 175.06 1.15 0.900 170.42 3.423 60.54 0.031 - 6.01 0.601 174.08 1.20 0.899 169.31 3.284 58.91 0.031 - 6.66 0.601 173.04 1.25 0.898 168.10 3.154 57.19 0.031 - 7.52 0.602 171.90 1.30 0.901 166.96 3.040 55.59 0.031 - 8.14 0.602 171.14 1.35 0.897 165.99 2.928 54.05 0.031 - 8.73 0.600 170.54 1.40 0.903 164.48 2.821 52.41 0.031 - 9.30 0.606 169.31 1.45 0.901 163.52 2.720 50.95 0.031 - 9.89 0.606 168.98 1.50 0.900 160.23 2.618 49.25 0.030 - 10.77 0.607 170.81 1.55 0.900 159.17 2.537 47.79 0.030 - 11.27 0.609 170.02 1.60 0.899 158.30 2.456 46.40 0.030 - 11.82 0.609 169.38 1.65 0.902 157.39 2.386 44.91 0.030 - 12.27 0.609 168.87 1.70 0.903 156.46 2.317 43.49 0.030 - 12.67 0.610 168.03 1.75 0.902 155.63 2.251 41.97 0.030 - 13.06 0.613 167.41 1.80 0.903 154.92 2.195 40.59 0.030 - 13.50 0.612 166.88 1.85 0.904 154.09 2.137 39.12 0.030 - 13.91 0.613 165.94 1.90 0.904 153.38 2.080 37.80 0.030 - 14.35 0.615 165.27 1.95 0.903 152.74 2.030 36.43 0.030 - 14.79 0.615 164.72 2.00 0.906 152.00 1.984 34.98 0.030 - 15.36 0.615 163.90 2.05 0.905 151.41 1.937 33.71 0.030 - 15.79 0.618 163.26 2.10 0.904 150.85 1.897 32.47 0.031 - 16.26 0.619 162.83 2.15 0.906 150.13 1.860 31.10 0.031 - 16.74 0.617 162.02 2.20 0.906 149.60 1.822 29.77 0.031 - 17.43 0.619 161.22 2.25 0.905 149.11 1.788 28.49 0.031 - 17.97 0.620 160.82 2.30 0.906 148.41 1.761 27.10 0.031 - 18.45 0.619 160.12 2.35 0.906 147.74 1.729 25.78 0.031 - 18.73 0.620 159.20 2.40 0.904 147.11 1.701 24.47 0.031 - 19.16 0.620 158.79 2.45 0.903 146.23 1.677 22.98 0.031 - 19.61 0.620 158.15 2.50 0.902 145.41 1.651 21.58 0.031 - 20.07 0.619 157.20 2.55 0.901 144.66 1.632 20.17 0.031 - 20.42 0.621 156.64 2.60 0.899 143.78 1.612 18.88 0.032 - 20.71 0.619 156.02 2.65 0.899 142.76 1.591 17.38 0.032 - 21.29 0.618 155.10 2.70 0.898 141.87 1.571 15.88 0.032 - 21.77 0.619 154.49 2.75 0.894 140.80 1.554 14.50 0.033 - 22.47 0.618 154.05 2.80 0.895 139.70 1.539 12.83 0.033 - 23.36 0.616 153.08 ARCHIVE INFORMATION ARCHIVE INFORMATION Table 6. Class AB Common Source S - Parameters at VDS = 12 Vdc, IDQ = 85 mA MRFG35005MT1 6 RF Device Data Freescale Semiconductor S11 S21 S12 S22 f GHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 2.85 0.895 138.63 1.522 11.37 0.034 - 24.77 0.618 152.46 2.90 0.893 137.48 1.507 9.90 0.034 - 26.15 0.618 151.97 2.95 0.893 136.05 1.493 8.24 0.034 - 27.11 0.616 150.93 3.00 0.894 134.72 1.478 6.55 0.034 - 27.92 0.618 150.06 3.05 0.892 133.46 1.465 4.95 0.034 - 28.51 0.617 149.53 3.10 0.890 131.81 1.453 3.30 0.034 - 29.31 0.616 148.45 3.15 0.892 130.31 1.436 1.60 0.034 - 29.98 0.616 147.51 3.20 0.891 128.98 1.421 0.04 0.034 - 30.69 0.617 146.90 3.25 0.888 127.31 1.409 - 1.72 0.034 - 31.47 0.615 145.95 3.30 0.890 125.83 1.394 - 3.40 0.034 - 32.45 0.616 145.01 3.35 0.889 124.49 1.380 - 4.89 0.034 - 33.06 0.616 144.44 3.40 0.887 122.78 1.367 - 6.59 0.034 - 33.59 0.615 143.59 3.45 0.889 121.40 1.352 - 8.31 0.034 - 34.06 0.615 142.69 3.50 0.888 119.96 1.338 - 9.91 0.035 - 34.46 0.616 141.92 3.55 0.887 118.32 1.328 - 11.56 0.035 - 35.34 0.615 141.09 3.60 0.888 116.96 1.313 - 13.16 0.035 - 36.09 0.613 140.03 3.65 0.887 115.68 1.299 - 14.69 0.036 - 36.68 0.613 139.19 3.70 0.887 114.24 1.287 - 16.36 0.036 - 37.71 0.612 138.40 3.75 0.887 113.05 1.274 - 17.90 0.036 - 38.84 0.612 137.36 3.80 0.888 111.84 1.262 - 19.43 0.036 - 39.90 0.613 136.45 3.85 0.888 110.59 1.252 - 20.85 0.036 - 40.73 0.613 135.74 3.90 0.887 109.45 1.240 - 22.36 0.036 - 41.33 0.612 134.56 3.95 0.888 108.32 1.230 - 24.01 0.036 - 41.73 0.613 133.64 4.00 0.887 107.24 1.222 - 25.35 0.036 - 42.00 0.612 133.05 4.05 0.886 106.10 1.216 - 26.93 0.037 - 42.60 0.611 131.91 4.10 0.887 105.02 1.205 - 28.43 0.037 - 43.13 0.611 130.81 4.15 0.886 104.22 1.198 - 29.78 0.037 - 43.70 0.609 130.15 4.20 0.884 103.08 1.195 - 31.44 0.038 - 44.59 0.607 128.89 4.25 0.885 102.00 1.189 - 33.00 0.038 - 45.54 0.608 127.57 4.30 0.885 101.08 1.184 - 34.46 0.038 - 46.22 0.608 126.81 4.35 0.884 100.08 1.183 - 35.96 0.039 - 46.93 0.605 125.63 4.40 0.883 98.90 1.176 - 37.67 0.039 - 48.09 0.606 124.16 4.45 0.882 97.99 1.172 - 39.19 0.039 - 49.06 0.607 123.26 4.50 0.881 96.91 1.176 - 40.74 0.040 - 49.87 0.604 122.03 4.55 0.880 95.41 1.172 - 42.48 0.040 - 50.58 0.603 120.40 4.60 0.879 94.29 1.172 - 44.02 0.040 - 51.24 0.601 119.45 4.65 0.878 92.80 1.177 - 45.83 0.041 - 52.21 0.597 118.22 4.70 0.877 91.10 1.175 - 47.87 0.042 - 53.61 0.594 116.51 4.75 0.876 89.66 1.176 - 49.70 0.042 - 55.11 0.594 115.24 4.80 0.874 87.90 1.178 - 51.58 0.042 - 56.51 0.590 113.89 4.85 0.874 86.08 1.177 - 53.56 0.042 - 57.66 0.589 112.15 4.90 0.870 84.39 1.175 - 55.56 0.042 - 58.60 0.588 110.76 4.95 0.867 82.48 1.177 - 57.53 0.043 - 59.41 0.585 109.40 5.00 0.866 80.32 1.179 - 59.75 0.043 - 60.39 0.583 107.71 ARCHIVE INFORMATION ARCHIVE INFORMATION Table 6. Class AB Common Source S - Parameters at VDS = 12 Vdc, IDQ = 85 mA (continued) MRFG35005MT1 RF Device Data Freescale Semiconductor 7 ARCHIVE INFORMATION ARCHIVE INFORMATION NOTES MRFG35005MT1 8 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION ARCHIVE INFORMATION NOTES MRFG35005MT1 RF Device Data Freescale Semiconductor 9 ARCHIVE INFORMATION ARCHIVE INFORMATION NOTES MRFG35005MT1 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS 0.146 3.71 A F 0.095 2.41 3 B D 1 2 R 0.115 2.92 0.115 2.92 L 0.020 0.51 4 0.35 (0.89) X 45_" 5 _ N K Q ÉÉÉ ÉÉÉÉ ÉÉÉ ÉÉ ÉÉ ÉÉÉ ÉÉ ÉÉ ÉÉÉ ÉÉÉÉ ÉÉÉ ÉÉÉÉ C 4 ZONE W 1 2 3 S G ZONE X VIEW Y - Y mm SOLDER FOOTPRINT P U H ZONE V inches 10_DRAFT Y Y E NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. STYLE 1: PIN 1. 2. 3. 4. DRAIN GATE SOURCE SOURCE CASE 466 - 03 ISSUE D PLD- 1.5 PLASTIC DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25 MRFG35005MT1 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners.  Freescale Semiconductor, Inc. 2006. All rights reserved. RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MRFG35005MT1 Document Number: MRFG35005MT1 Rev. 3, 1/2006 12 RF Device Data Freescale Semiconductor