MW4IC915GMBR1

MW4IC915 Freescale Semiconductor Rev. 6, 5/2006 Replaced by MW4IC915NBR1(GNBR1). There are no form, fit or function changes with this part Technical Data replacement. N suffix added to part number to indicate transition to lead - free terminations. ARCHIVE INFORMATION The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On- Chip design makes it usable from 750 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N - CDMA and W - CDMA. Final Application • Typical Performance: VDD = 26 Volts, IDQ1 = 60 mA, IDQ2 = 240 mA, Pout = 15 Watts CW, Full Frequency Band (860 - 960 MHz) Power Gain — 30 dB Power Added Efficiency — 44% Driver Application • Typical GSM/GSM EDGE Performances: VDD = 26 Volts, IDQ1 = 60 mA, IDQ2 = 240 mA, Pout = 3 Watts Avg., Full Frequency Band (869 - 894 MHz and 921 - 960 MHz) Power Gain — 31 dB Power Added Efficiency — 19% Spectral Regrowth @ 400 kHz Offset = - 65 dBc Spectral Regrowth @ 600 kHz Offset = - 83 dBc EVM — 1.5% • Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 15 Watts CW Output Power • Characterized with Series Equivalent Large - Signal Impedance Parameters • On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function • On - Chip Current Mirror gm Reference FET for Self Biasing Application(1) • Integrated ESD Protection • 200°C Capable Plastic Package • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. VRD2 VRG2 VDS1 RFin VDS2/RFout VRD1 VRG1 VGS1 Quiescent Current Temperature Compensation VGS2 Figure 1. Functional Block Diagram MW4IC915MBR1 MW4IC915GMBR1 860 - 960 MHz, 15 W, 26 V GSM/GSM EDGE, N - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW4IC915MBR1 CASE 1329A - 03 TO - 272 WB - 16 GULL PLASTIC MW4IC915GMBR1 GND VRD2 VRG2 VDS1 VRD1 1 2 3 4 5 16 15 GND NC RFin 6 14 VRG1 VGS1 VGS2 NC GND RFout/ VDS2 7 8 9 10 11 13 12 NC GND ARCHIVE INFORMATION RF LDMOS Wideband Integrated Power Amplifiers (Top View) Note: Exposed backside flag is source terminal for transistors. Figure 2. Pin Connections 1. Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1987. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MW4IC915MBR1 MW4IC915GMBR1 1 Table 1. Maximum Ratings Symbol Value Unit Drain- Source Voltage Rating VDSS - 0.5. +65 Vdc Gate- Source Voltage VGS - 0.5. +15 Vdc Storage Temperature Range Tstg - 65 to +175 °C Operating Junction Temperature TJ 200 °C Symbol Value (1) Table 2. Thermal Characteristics ARCHIVE INFORMATION Thermal Resistance, Junction to Case Unit RθJC °C/W GSM Application (Pout = 15 W CW) Stage 1, 26 Vdc, IDQ = 60 mA Stage 2, 26 Vdc, IDQ = 240 mA 7.3 1.7 GSM EDGE Application (Pout = 7.5 W CW) Stage 1, 26 Vdc, IDQ = 60 mA Stage 2, 26 Vdc, IDQ = 240 mA 7.3 1.8 CDMA Application (Pout = 3.75 W CW) Stage 1, 26 Vdc, IDQ = 60 mA Stage 2, 26 Vdc, IDQ = 240 mA 7.4 1.9 Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) Charge Device Model C2 (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDS = 26 Vdc, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 15 W PEP, f1 = 869 MHz, f2 = 869.1 MHz and f1 = 960 MHz and f2 = 960.1 MHz, Two - Tone Power Gain Gps 29 31 — dB Power Added Efficiency PAE 29 31 — % Intermodulation Distortion IMD — - 40 - 29 dBc Input Return Loss IRL — - 15 - 10 dB 1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. ARCHIVE INFORMATION Characteristic (continued) MW4IC915MBR1 MW4IC915GMBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued ) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Reference Board) VDS = 26 V, IDQ1 = 60 mA, IDQ2 = 240 mA, 869 MHz960 MHz ΔIQT — ±5 — % Gain Flatness in 40 MHz Bandwidth @ Pout = 3 W CW GF — 0.2 — dB Deviation from Linear Phase in 40 MHz Bandwidth @ Pout = 3 W CW Φ — ±0.6 — ° Delay — 2.5 — ns ΔΦ — ±15 — ° Quiescent Current Accuracy over Temperature with 1.8 kΩ Gate Feed Resistors ( - 10 to 85°C) (1) Delay @ Pout = 3 W CW Including Output Matching Part - to - Part Phase Variation @ Pout = 3 W CW ARCHIVE INFORMATION Output Power, 1dB Compression Point P1dB — 20 — Watts Power Gain @ Pout = 15 W CW Gps — 30 — dB Power Added Efficiency @ Pout = 15 W CW PAE — 44 — % Input Return Loss @ Pout = 15 W CW IRL — - 15 — dB Error Vector Magnitude @ Pout = 3 W Avg. including 0.6% rms source EVM EVM — 1.5 — % rms Spectral Regrowth at 400 kHz Offset @ Pout = 3 W Avg. SR1 — - 65 — dBc Spectral Regrowth at 600 kHz Offset @ Pout = 3 W Avg. SR2 — - 83 — dBc 1. Refer to AN1977/D, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977. ARCHIVE INFORMATION Typical GSM/GSM EDGE Performances (In Freescale Reference Board) VDS = 26 V, IDQ1 = 60 mA, IDQ2 = 240 mA, 869 MHz