OM7609/BGA2748

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BGA2748 MMIC wideband amplifier Product specification Supersedes data of 2002 Jul 03 2010 Sep 13 NXP Semiconductors Product specification MMIC wideband amplifier BGA2748 FEATURES PINNING • Internally matched PIN DESCRIPTION • Wide frequency range 1 • Optimized for 900 MHz 2, 5 GND2 3 RF out 4 GND1 6 RF in • Excellent isolation • Low noise • Unconditionally stable. APPLICATIONS VS 6 5 4 1 • Cable systems • LNB IF amplifiers 6 • General purpose 1 • ISM. 2 Top view DESCRIPTION 4 3 2, 5 MAM455 Marking code: G3* Silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. 3 * = - : made in Hong Kong * = p : made in Hong Kong * = t : made in Malaysia Fig.1 Simplified outline (SOT363) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VS DC supply voltage 3 4 V IS DC supply current 5.7 − mA insertion power gain f = 1 GHz 21.8 − dB NF noise figure f = 1 GHz 1.9 − dB PL(sat) saturated load power f = 1 GHz −2.3 − dBm |s21 |2 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 2010 Sep 13 2 NXP Semiconductors Product specification MMIC wideband amplifier BGA2748 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134) SYMBOL PARAMETER VS DC supply voltage IS supply current CONDITIONS MIN. RF input AC coupled Ts ≤ 80 °C MAX. UNIT − 4 V − 15 mA Ptot total power dissipation − 200 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C PD maximum drive power − 10 dBm THERMAL RESISTANCE SYMBOL Rth j-s PARAMETER CONDITIONS VALUE UNIT 300 K/W Ptot = 200 mW; Ts ≤ 80 °C thermal resistance from junction to solder point CHARACTERISTICS VS = 3 V; IS = 5.7 mA; f = 1 GHz; Tj = 25 °C; unless otherwise specified. SYMBOL CONDITIONS supply current IS |s21 PARAMETER |2 insertion power gain MIN. TYP. MAX. UNIT 4.5 5.7 8 mA f = 1 GHz − 21.8 − dB f = 2 GHz − 18.5 − dB − 18 − dB RL IN return losses input f = 1 GHz f = 2 GHz − 14 − dB RL OUT return losses output f = 1 GHz − 7 − dB f = 2 GHz − 8 − dB NF noise figure f = 1 GHz − 1.9 − dB f = 2 GHz − 2.4 − dB |s21|2 − 1.9 − GHz −3 dB below flat gain at 1 GHz BW bandwidth at PL(sat) saturated load power f = 1 GHz − −2.3 − dBm f = 2 GHz − −3.3 − dBm PL 1 dB load power at 1 dB gain compression; f = 1 GHz − −9.2 − dBm at 1 dB gain compression; f = 2 GHz − −10.9 − dBm IP3(in) IP3(out) 2010 Sep 13 input intercept point output intercept point f = 1 GHz − −23.7 − dBm f = 2 GHz − −19.9 − dBm f = 1 GHz − −1.9 − dBm f = 2 GHz − −1.4 − dBm 3 NXP Semiconductors Product specification MMIC wideband amplifier BGA2748 APPLICATION INFORMATION Figure 2 shows a typical application circuit for the BGA2748 MMIC. The device is internally matched to 50 Ω, and therefore does not need any external matching. The value of the input and output DC blocking capacitors C2, C3 should be not more than 100 pF for applications above 100 MHz. However, when the device is operated below 100 MHz, the capacitor value should be increased. DC-block handbook, halfpage DC-block 100 pF 100 pF DC-block 100 pF input output MGU437 The 22 nF supply decoupling capacitor, C1 should be located as closely as possible to the MMIC. Fig.3 Easy cascading application circuit. Separate paths must be used for the ground planes of the ground pins GND1, GND2, and these paths must be as short as possible. When using vias, use multiple vias per pin in order to limit ground path inductance. mixer handbook, halfpage from RF circuit to IF circuit or demodulator wideband amplifier Vshalfpage handbook, MGU438 oscillator C1 Vs RF in RF input RF out C2 RF output Fig.4 Application as IF amplifier. C3 GND1 GND2 MGU435 Fig.2 Typical application circuit. mixer handbook, halfpage to IF circuit or demodulator antenna LNA Figure 3 shows two cascaded MMICs. This configuration doubles overall gain while preserving broadband characteristics. Supply decoupling and grounding conditions for each MMIC are the same as those for the circuit of Fig.2. wideband amplifier MGU439 oscillator Fig.5 Application as RF amplifier. The excellent wideband characteristics of the MMIC make it and ideal building block in IF amplifier applications such as LBNs (see Fig.4). As a buffer amplifier between an LNA and a mixer in a receiver circuit, the MMIC offers an easy matching, low noise solution (see Fig.5). mixer handbook, halfpage from modulation or IF circuit to power amplifier wideband amplifier In Fig.6 the MMIC is used as a driver to the power amplifier in part of a transmitter circuit. Good linear performance and matched input and output offer quick design solutions in such applications. MGU440 oscillator Fig.6 Application as driver amplifier. 2010 Sep 13 4 NXP Semiconductors Product specification MMIC wideband amplifier BGA2748 90° handbook, full pagewidth 1.0 +1 135° 0.8 45° +2 +0.5 0.6 +0.2 0.4 +5 0.2 100 MHz 180° 0.2 0 0.5 1 2 5 0° 0 3 GHz −5 −0.2 −0.5 −2 −135° −45° −1 MGU465 1.0 −90° IS = 5.66 mA; VS = 3 V; PD = −30 dBm; ZO = 50 Ω. Fig.7 Input reflection coefficient (s11); typical values. 90° handbook, full pagewidth 1.0 +1 135° 0.8 45° +2 +0.5 0.6 +0.2 0.4 +5 0.2 180° 0.2 0 0.5 1 5 100 MHz 0° 0 3 GHz −5 −0.2 −0.5 −2 −135° −45° −1 MGU466 IS = 5.66 mA; VS = 3 V; PD = −30 dBm; ZO = 50 Ω. −90° Fig.8 Output reflection coefficient (s22); typical values. 2010 Sep 13 5 1.0 NXP Semiconductors Product specification MMIC wideband amplifier BGA2748 MGU467 0 MGU468 30 handbook, halfpage handbook, halfpage 2 s12 (dBm) s21 2 (dB) −20 20 −40 10 −60 −80 0 0 1000 2000 0 3000 1000 f (MHz) IS = 5.66 mA; VS = 3 V; PD = −30 dBm; ZO = 50 Ω. Fig.9 IS = 5.66 mA; VS = 3 V; PD = −30 dBm; ZO = 50 Ω. Isolation (|s12|2) as a function of frequency; typical values. Fig.10 Insertion gain (|s21|2) as a function of frequency; typical values. MGU469 0 handbook, halfpage PL (dBm) PL (dBm) −10 −10 −20 −20 −40 −30 −20 MGU470 0 handbook, halfpage −30 −50 3000 2000 f (MHz) −30 −50 0 −10 PD (dBm) −40 −30 −20 0 −10 PD (dBm) VS = 3 V; f = 1 GHz; ZO = 50 Ω. VS = 3 V; f = 2 GHz; ZO = 50 Ω. Fig.11 Load power as a function of drive power at 1 GHz; typical values. Fig.12 Load power as a function of drive power at 2 GHz; typical values. 2010 Sep 13 6 NXP Semiconductors Product specification MMIC wideband amplifier BGA2748 MGU471 5 MGU472 15 handbook, halfpage NF (dB) K 4 10 3 2 5 1 0 0 0 1000 2000 f (MHz) 3000 0 1000 2000 f (MHz) 3000 IS = 5.66 mA; VS = 3 V; ZO = 50 Ω. IS = 5.66 mA; VS = 3 V; ZO = 50 Ω. Fig.13 Noise figure as a function of frequency; typical values. Fig.14 Stability factor as a function of frequency; typical values. Table 1 f (MHz) Scattering parameters: IS = 5.66 mA; VS = 3 V; PD = −30 dBm; ZO = 50 Ω; Tamb = 25 °C s11 s21 MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) s12 ANGLE (deg) s22 MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) 100 0.08233 −6.058 5.4700 14.75 0.00049 −92.64 0.32715 −3.589 200 0.08934 1.505 6.8702 17.10 0.00078 −91.63 0.32763 −2.304 400 0.10677 1.621 9.7365 5.277 0.00164 −108.6 0.33688 −1.542 600 0.12257 −2.565 11.586 −12.73 0.00168 −119.4 0.36332 −1.800 800 0.12902 −8.769 12.372 −31.11 0.00233 −113.0 0.39884 −3.931 1000 0.12635 −11.24 12.519 −48.70 0.00363 −129.6 0.44177 −8.067 1200 0.11634 −9.574 12.232 −65.32 0.00551 −140.5 0.47449 −14.54 1400 0.11643 1.8040 11.550 −81.52 0.00659 −151.4 0.48300 −21.47 1600 0.12552 14.913 10.664 −96.69 0.00779 −163.4 0.46932 −28.10 1800 0.15177 23.659 9.6775 −111.1 0.00871 −176.5 0.43106 −34.03 2000 0.18258 27.689 8.5565 −124.5 0.01025 172.8 0.37882 −38.74 2200 0.20634 29.316 7.5480 −136.9 0.01124 160.7 0.31996 −41.11 2400 0.22422 28.365 6.5362 −148.4 0.01078 146.8 0.26441 −40.43 2600 0.22777 26.661 5.6120 −158.5 0.00884 131.1 0.22542 −37.88 2800 0.21931 28.691 4.8007 −167.7 0.00548 123.8 0.18502 −38.37 3000 0.22247 37.201 3.9567 −175.6 0.00384 160.7 0.12693 −37.56 2010 Sep 13 7 NXP Semiconductors Product specification MMIC wideband amplifier BGA2748 PACKAGE OUTLINE Plastic surface-mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 2010 Sep 13 REFERENCES IEC JEDEC JEITA SC-88 8 EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 NXP Semiconductors Product specification MMIC wideband amplifier BGA2748 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Limited warranty and liability ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 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Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be 2010 Sep 13 9 NXP Semiconductors Product specification MMIC wideband amplifier BGA2748 Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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