PBSS2515VS

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS2515VS 15 V low VCE(sat) NPN double transistor Product data sheet Supersedes data of 2001 Nov 07 2004 Dec 23 NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN double transistor FEATURES • 300 mW total power dissipation • Very small 1.6 × 1.2 mm ultra thin package • Excellent coplanarity due to straight leads • Low collector-emitter saturation voltage • High current capability • Improved thermal behaviour due to flat lead • Replaces two SC-75/SC-89 packaged low VCEsat transistors on same PCB area • Reduces required PCB area • Reduced pick and place costs. APPLICATIONS • General purpose switching and muting • Low frequency driver circuits • LCD backlighting • Audio frequency general purpose amplifier applications • Battery driven equipment (mobile phones, video cameras and hand-held devices). handbook, halfpage 6 PBSS2515VS QUICK REFERENCE DATA SYMBOL VCEO ICM RCEsat PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current equivalent on-resistance MAX. 15 1