PBSS2515YPN

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 PBSS2515YPN 15 V low VCE(sat) NPN/PNP transistor Product data sheet Supersedes data of 2002 May 08 2005 Jan 11 NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN/PNP transistor FEATURES • Low collector-emitter saturation voltage • High current capability • Replaces two SC-70 packaged low VCEsat transistors on same PCB area • Reduces required PCB area • Reduced pick and place costs. APPLICATION • General purpose switching and muting • Low frequency driver circuits • LCD backlighting • Supply line switching circuits • Battery driven equipment (mobile phones, video cameras and hand-held devices). DESCRIPTION NPN/PNP low VCEsat transistor pair in a SC-88 plastic package. MARKING TYPE NUMBER PBSS2515YPN Note 1. * = -: made in Hong Kong * = t: made in Malaysia * = W: made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS2515YPN SC-88 DESCRIPTION plastic surface mounted package; 6 leads MARKING CODE N8* Fig.1 6 handbook, halfpage 5 4 PBSS2515YPN QUICK REFERENCE DATA SYMBOL VCEO ICM RCEsat PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current equivalent on-resistance MAX. 15 1