PBSS4240T

DISCRETE SEMICONDUCTORS DATA SHEET PBSS4240T 40 V; 2 A NPN low VCEsat (BISS) transistor Product data sheet Supersedes data of 2001 Jul 13 2004 Jan 09 NXP Semiconductors Product data sheet 40 V; 2 A NPN low VCEsat (BISS) transistor FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packaged transistors. APPLICATIONS • Supply line switching circuits • Battery management applications • DC/DC converter applications • Strobe flash units • Heavy duty battery powered equipment (motor and lamp drivers). DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5240T. 1 2 handbook, halfpage PBSS4240T QUICK REFERENCE DATA SYMBOL VCEO ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage peak collector current equivalent on-resistance MAX. 40 3