PBSS4540X

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS4540X 40 V, 5 A NPN low VCEsat (BISS) transistor Product data sheet Supersedes data of 2004 Jun 11 2004 Nov 04 NXP Semiconductors Product data sheet 40 V, 5 A NPN low VCEsat (BISS) transistor FEATURES • High hFE and low VCEsat at high current operation • High collector current capability: IC maximum 4 A • High efficiency leading to less heat generation. APPLICATIONS • Medium power peripheral drivers (e.g. fan and motor) • Strobe flash units for DSC and mobile phones • Inverter applications (e.g. TFT displays) • Power switch for LAN and ADSL systems • Medium power DC-to-DC conversion • Battery chargers. DESCRIPTION NPN low VCEsat transistor in a medium power SOT89 (SC-62) package. PNP complement: PBSS5540X. MARKING TYPE NUMBER PBSS4540X Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS4540X SC-62 DESCRIPTION MARKING CODE(1) *1B PINNING PIN 1 2 3 emitter collector base QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PARAMETER PBSS4540X MAX. 40 4 10 71 UNIT V A A mΩ collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance DESCRIPTION 2 3 1 sym042 3 2 1 Fig.1 Simplified outline (SOT89) and symbol. VERSION SOT89 plastic surface mounted package; collector pad for good heat transfer; 3 leads 2004 Nov 04 2 NXP Semiconductors Product data sheet 40 V, 5 A NPN low VCEsat (BISS) transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICRM ICM IB IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) maximum repetitive collector current peak collector current base current (DC) peak base current total power dissipation tp ≤ 1 ms Tamb ≤ 25 °C notes 1 and 2 note 2 note 3 note 4 note 5 Tstg Tj Tamb Notes 1. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2. storage temperature junction temperature operating ambient temperature − − − − − −65 − −65 notes 1 and 2 tp ≤ 1 ms CONDITIONS open emitter open base open collector − − − − − − − − MIN. PBSS4540X MAX. 40 40 6 4 5 10 1 2 2.5 0.55 1 1.4 1.6 +150 150 +150 UNIT V V V A A A A A W W W W W °C °C °C 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2. 4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2. 5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. 2004 Nov 04 3 NXP Semiconductors Product data sheet 40 V, 5 A NPN low VCEsat (BISS) transistor PBSS4540X 1600 Ptot (mW) 1200 (2) (1) 001aaa229 800 (3) 400 0 −50 0 50 100 150 200 Tamb (°C) (1) FR4 PCB; 6 cm2 mounting pad for collector. (2) FR4 PCB; 1 cm2 mounting pad for collector. (3) FR4; standard footprint. Fig.2 Power derating curves. 2004 Nov 04 4 NXP Semiconductors Product data sheet 40 V, 5 A NPN low VCEsat (BISS) transistor THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER from junction to ambient in free air notes 1 and 2 note 2 note 3 note 4 note 5 Rth(j-s) Notes 1. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2. from junction to soldering point CONDITIONS PBSS4540X VALUE 50 225 125 90 80 16 UNIT K/W K/W K/W K/W K/W K/W 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2. 4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2. 5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. 103 Zth (K/W) 102 (1) (2) (3) (4) (5) (6) 006aaa232 10 (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 Mounted on FR4 printed-circuit board; standard footprint. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.3 Transient thermal impedance as a function of pulse time; typical values. 2004 Nov 04 5 NXP Semiconductors Product data sheet 40 V, 5 A NPN low VCEsat (BISS) transistor PBSS4540X 103 Zth (K/W) (1) 006aaa233 102 (3) (5) (6) (2) (4) 10 (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.4 Transient thermal impedance as a function of pulse time; typical values. 103 Zth (K/W) 102 (1) (2) (3) (4) (5) (6) (7) (8) (9) 006aaa234 10 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.5 Transient thermal impedance as a function of pulse time; typical values. 2004 Nov 04 6 NXP Semiconductors Product data sheet 40 V, 5 A NPN low VCEsat (BISS) transistor CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICES IEBO hFE PARAMETER collector-base cut-off current collector-emitter cut-off current DC current gain CONDITIONS VCB = 30 V; IE = 0 A VCB = 30 V; IE = 0 A; Tj = 150 °C VCE = 30 V; VBE = 0 V − − − − 300 300 250 100 − − − − − − − − − 70 − MIN. − − − − − − − − − − − − − 40 − − − − − TYP. PBSS4540X MAX. 100 50 0.1 100 − − − − 90 120 150 290 355 71 1.1 1.2 1.1 − 75 UNIT nA μA μA nA emitter-base cut-off current VEB = 5 V; IC = 0 A VCE = 2 V; IC = 0.5 A VCE = 2 V; IC = 1 A; note 1 VCE = 2 V; IC = 2 A; note 1 VCE = 2 V; IC = 5 A; note 1 VCEsat collector-emitter saturation IC = 0.5 A; IB = 5 mA voltage IC = 1 A; IB = 10 mA IC = 2 A; IB = 200 mA; note 1 IC = 4 A; IB = 200 mA; note 1 IC = 5 A; IB = 500 mA; note 1 mV mV mV mV mV mΩ V V V MHz pF RCEsat VBEsat VBEon fT Cc Note equivalent on-resistance base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance IC = 5 A; IB = 500 mA; note 1 IC = 4 A; IB = 200 mA; note 1 IC = 5 A; IB = 500 mA; note 1 VCE = 2 V; IC = 2 A VCE = 10 V; IC = 0.1 A; f = 100 MHz VCB = 10 V; IE = ie = 0 A; f = 1 MHz 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2004 Nov 04 7 NXP Semiconductors Product data sheet 40 V, 5 A NPN low VCEsat (BISS) transistor PBSS4540X 800 hFE 600 (2) (1) 001aaa223 1.2 VBE (V) 0.8 (1) 001aaa222 400 (3) (2) (3) 0.4 200 0 10−1 1 10 102 103 104 IC (mA) 0.0 10−1 1 10 102 103 104 IC (mA) VCE = 2 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = 2 V. (1) Tamb = 55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.6 DC current gain as a function of collector current; typical values. Fig.7 Base-emitter voltage as a function of collector current; typical values. 1 VCEsat (V) 10−1 001aaa225 1 VCEsat (V) 10−1 001aaa997 (1) (2) (1) 10−2 (3) 10−2 (2) (3) 10−3 10−1 1 10 102 103 104 IC (mA) 10−3 10−1 1 10 102 103 104 IC (mA) IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Tamb = 25 °C. (1) IC/IB = 100. (2) IC/IB = 50. (3) IC/IB = 10. Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.9 Collector-emitter saturation voltage as a function of collector current; typical values. 2004 Nov 04 8 NXP Semiconductors Product data sheet 40 V, 5 A NPN low VCEsat (BISS) transistor PBSS4540X 10 001aaa227 102 RCEsat (Ω) 001aaa224 VBEsat (V) 10 1 (1) (2) (3) 1 10−1 (1) (2) (3) 10−1 10−1 1 10 102 103 104 IC (mA) 10−2 10−1 1 10 102 103 104 IC (mA) IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.10 Base-emitter saturation voltage as a function of collector current; typical values. Fig.11 Equivalent on-resistance as a function of collector current; typical values. 103 RCEsat (Ω) 102 (1) 001aaa973 10 IC (A) 8 (1) 001aaa221 10 (2) 6 (2) (3) 1 (3) 4 (4) (5) 10−1 2 10−2 10−1 1 10 102 103 104 IC (mA) 0 0 0.5 1 1.5 VCE (V) 2 Tamb = 25 °C. (1) IC/IB = 100. (2) IC/IB = 50. (3) IC/IB = 10. (1) IB = 25 mA. (2) IB = 20 mA. (3) IB = 15 mA. (4) IB = 10 mA. (5) IB = 5 mA. Fig.12 Equivalent on-resistance as a function of collector current; typical values. Fig.13 Collector current as a function of collector-emitter voltage; typical values. 2004 Nov 04 9 NXP Semiconductors Product data sheet 40 V, 5 A NPN low VCEsat (BISS) transistor Reference mounting conditions PBSS4540X 32 mm 32 mm 10 mm 2.5 mm 1 mm 3 mm 2.5 mm 1 mm 0.5 mm 5 mm 3.96 mm 1.6 mm 001aaa234 40 mm 40 mm 2.5 mm 10 mm 1 mm 0.5 mm 5 mm 3.96 mm 1.6 mm 001aab105 Fig.14 FR4, standard footprint. Fig.15 FR4, mounting pad for collector 1 cm2. 32 mm 30 mm 40 mm 2.5 mm 1 mm 0.5 mm 20 mm 5 mm 3.96 mm 1.6 mm 001aaa235 Fig.16 FR4, mounting pad for collector 6 cm2. 2004 Nov 04 10 NXP Semiconductors Product data sheet 40 V, 5 A NPN low VCEsat (BISS) transistor PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads PBSS4540X SOT89 D B A bp3 E HE Lp 1 2 bp2 wM bp1 e1 e 3 c 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.6 1.4 bp1 0.48 0.35 bp2 0.53 0.40 bp3 1.8 1.4 c 0.44 0.23 D 4.6 4.4 E 2.6 2.4 e 3.0 e1 1.5 HE 4.25 3.75 Lp 1.2 0.8 w 0.13 OUTLINE VERSION SOT89 REFERENCES IEC JEDEC TO-243 JEITA SC-62 EUROPEAN PROJECTION ISSUE DATE 04-08-03 06-03-16 2004 Nov 04 11 NXP Semiconductors Product data sheet 40 V, 5 A NPN low VCEsat (BISS) transistor DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes 1. Please consult the most recently issued document before initiating or completing a design. PRODUCT STATUS(2) Development Qualification Production DEFINITION PBSS4540X This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Nov 04 12 above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/03/pp13 Date of release: 2004 Nov 04 Document order number: 9397 750 13885