PIMT1

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 PIMT1 PNP general purpose double transistor Product data sheet 2001 Oct 22 NXP Semiconductors Product data sheet PNP general purpose double transistor FEATURES • 600 mW total power dissipation • Low current (max. 100 mA) • Low voltage (max. 40 V) • Reduces number of components and required PCB area • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification. 6 5 4 6 5 PIMT1 PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 4 TR2 DESCRIPTION PNP transistor pair in an SC-74 (SOT457) plastic package. MARKING TYPE NUMBER PIMT1 MARKING CODE M1 Fig.1 1 2 3 MAM457 TR1 1 2 3 Top view Simplified outline (SC74; SOT457) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per transistor VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Per device Ptot Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2. total power dissipation Tamb ≤ 25 °C; note 1 − 600 mW collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open emitter open base open collector − − − − − − − −65 − −65 −50 −40 −5 −100 −200 −200 300 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER CONDITIONS MIN. MAX. UNIT 2001 Oct 22 2 NXP Semiconductors Product data sheet PNP general purpose double transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 208 PIMT1 UNIT K/W 1. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL Per transistor ICBO IEBO hFE VCEsat Cc fT Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. collector-base cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage collector capacitance transition frequency VCB = −30 V; IE = 0 VCB = −30 V; IE = 0; Tj = 150 °C VEB = −4 V; IC = 0 VCE = −6 V; IC = −1 mA IC = −50 mA; IB = −5 mA; note 1 VCB = −12 V; IE = Ie = 0; f = 1 MHz VCE = −12 V; IC = −2 mA; f = 100 MHz − − − 120 − − 100 −100 −10 −100 − −200 2.2 − mV pF MHz nA μA nA PARAMETER CONDITIONS MIN. MAX. UNIT 2001 Oct 22 3 NXP Semiconductors Product data sheet PNP general purpose double transistor PACKAGE OUTLINE PIMT1 Plastic surface mounted package; 6 leads SOT457 D B E A X y HE vMA 6 5 4 Q pin 1 index A A1 c 1 2 3 Lp e bp wM B detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 0.1 0.013 bp 0.40 0.25 c 0.26 0.10 D 3.1 2.7 E 1.7 1.3 e 0.95 HE 3.0 2.5 Lp 0.6 0.2 Q 0.33 0.23 v 0.2 w 0.2 y 0.1 OUTLINE VERSION SOT457 REFERENCES IEC JEDEC EIAJ SC-74 EUROPEAN PROJECTION ISSUE DATE 97-02-28 01-05-04 2001 Oct 22 4 NXP Semiconductors Product data sheet PNP general purpose double transistor DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes 1. Please consult the most recently issued document before initiating or completing a design. PRODUCT STATUS(2) Development Qualification Production DEFINITION PIMT1 This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 2001 Oct 22 5 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp6 Date of release: 2001 Oct 22 Document order number: 9397 750 08728