PMFPB6532UP,115

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia ') 1   PMFPB6532UP 20 V, 3.5 A / 320 mV VF P-channel MOSFET-Schottky combination Rev. 2 — 1 June 2012 Product data sheet 1. Product profile 1.1 General description Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits      Trench MOSFET technology Integrated ultra low VF MEGA Schottky diode 1 kV ElectroStatic Discharge (ESD) protection Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm Exposed drain pad for excellent thermal conduction 1.3 Applications     Charging switch for portable devices DC-to-DC converters Power management in battery-driven portables Hard disk and computing power management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit MOSFET transistor VDS drain-source voltage Tamb = 25 °C - - −20 V VGS gate-source voltage Tamb = 25 °C - - ±8 V ID drain current Tamb = 25 °C; VGS = −4.5 V [1] - - −3.5 A RDSon drain-source on-state resistance Tj = 25 °C; VGS = −4.5 V; ID = −1 A [2] - 58 70 mΩ PMFPB6532UP NXP Semiconductors P-channel MOSFET-Schottky combination Table 1. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit Schottky diode IF forward current Tsp ≤ 133 °C - - 2 A VR reverse voltage Tamb = 25 °C - - 20 V VF forward voltage Tamb = 25 °C; IF = 1 A - 320 365 mV [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Pulse test: tp ≤ 300 μs; δ ≤ 0.01. 2. Pinning information Table 2. Pinning Pin Symbol Description 1 A anode 2 n.c. not connected 3 D drain 4 S source 5 G gate 6 K cathode 7 K cathode 8 D drain Simplified outline 6 5 7 1 Graphic symbol 4 8 2 D A S K G 3 Transparent top view 017aaa600 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMFPB6532UP DFN2020-6 plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body 2 × 2 × 0.65 mm SOT1118 4. Marking Table 4. PMFPB6532UP Product data sheet Marking codes Type number Marking code PMFPB6532UP 1B All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 June 2012 © NXP B.V. 2012. All rights reserved. 2 of 18 PMFPB6532UP NXP Semiconductors P-channel MOSFET-Schottky combination 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit MOSFET transistor VDS drain-source voltage Tamb = 25 °C - −20 V VGS gate-source voltage Tamb = 25 °C - ±8 V ID drain current VGS = −4.5 V - −3.5 A [1] Tamb = 25 °C Tamb = 100 °C IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 μs Ptot total power dissipation Tamb = 25 °C [2] [1] Tsp = 25 °C - −2.7 A - −20 A - 520 mW - 1.25 W - 8.3 W Source-drain diode source current IS Tamb = 25 °C [1] - −1.4 A human body model; C = 100 pF; R = 1.5 kΩ [3] - 1000 V ESD maximum rating VESD electrostatic discharge voltage Schottky diode VR reverse voltage Tamb = 25 °C - 20 V IF forward current Tsp ≤ 133 °C - 2 A IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25; Tamb = 25 °C - 7 A IFSM non-repetitive peak forward current tp = 8 ms; square wave [4] - 18 A tp = 8 ms; half-sine wave [5] - 25 A Tamb = 25 °C [2] - 480 mW [1] - 1190 mW - 8.3 W total power dissipation Ptot Tsp = 25 °C Per device Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] PMFPB6532UP Product data sheet Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Measured between all pins. [4] Tj = 25 °C prior to surge. [5] Calculated from square-wave measurements; Tj = 25 °C prior to surge. All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 June 2012 © NXP B.V. 2012. All rights reserved. 3 of 18 PMFPB6532UP NXP Semiconductors P-channel MOSFET-Schottky combination 017aaa001 120 017aaa002 120 Pder (%) Ider (%) 80 80 40 40 0 −75 −25 25 75 0 −75 125 175 Tamb (°C) P tot P der = ------------------------ × 100 % P tot ( 25°C ) Fig 1. −25 25 75 125 175 Tamb (°C) ID I der = -------------------- × 100 % I D ( 25°C ) MOSFET transistor: Normalized total power dissipation as a function of ambient temperature Fig 2. MOSFET transistor: Normalized continuous drain current as a function of ambient temperature 017aaa066 −102 ID (A) Limit RDSon = VDS/ID −10 (1) (2) −1 (3) (4) (5) −10−1 (6) −10−2 −10−1 −1 −10 VDS (V) −102 IDM = single pulse (1) tp = 100 μs (2) tp = 1 ms (3) tp = 10 ms (4) DC; Tsp = 25 °C (5) tp = 100 ms (6) DC; Tamb = 25 °C; drain mounting pad 6 cm2 Fig 3. MOSFET transistor: Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage PMFPB6532UP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 June 2012 © NXP B.V. 2012. All rights reserved. 4 of 18 PMFPB6532UP NXP Semiconductors P-channel MOSFET-Schottky combination 6. Thermal characteristics Table 6. Symbol Thermal characteristics Parameter Conditions Min Typ Max Unit [1] - - 240 K/W [2] - - 100 K/W - - 15 K/W [1] - - 260 K/W [2] - - 105 K/W - - 15 K/W MOSFET transistor Rth(j-a) Rth(j-sp) thermal resistance from junction to ambient in free air thermal resistance from junction to solder point Schottky diode Rth(j-a) Rth(j-sp) thermal resistance from junction to ambient in free air thermal resistance from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. 017aaa067 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.33 0.25 0.1 0.2 0.05 10 0 1 10−3 0.02 0.01 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. MOSFET transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMFPB6532UP All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 — 1 June 2012 © NXP B.V. 2012. All rights reserved. 5 of 18 PMFPB6532UP NXP Semiconductors P-channel MOSFET-Schottky combination 017aaa068 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 6 cm2 Fig 5. MOSFET transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa082 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.33 0.25 0.1 10 0 1 10−3 0.2 0.05 0.02 0.01 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 6. Schottky diode: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMFPB6532UP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 June 2012 © NXP B.V. 2012. All rights reserved. 6 of 18 PMFPB6532UP NXP Semiconductors P-channel MOSFET-Schottky combination 017aaa083 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.25 0.33 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 102 10 103 tp (s) FR4 PCB, mounting pad for cathode 6 cm2 Fig 7. Schottky diode: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit MOSFET transistor Static characteristics V(BR)DSS drain-source breakdown ID = −250 μA; VGS = 0 V voltage −20 - - V VGS(th) gate-source threshold voltage ID = −250 μA; VDS = VGS −0.4 −0.7 −1 V IDSS drain leakage current VDS = −16 V; VGS = 0 V Tj = 25 °C - - −1 μA Tj = 150 °C - - −10 μA - 1 ±10 μA VGS = −4.5 V; ID = −1 A - 58 70 mΩ VGS = −4.5 V; ID = −1 A; Tj = 150 °C - 80 100 mΩ VGS = −2.5 V; ID = −1 A - 72 90 mΩ VGS = −1.8 V; ID = −0.5 A - 100 165 mΩ - 8 - S IGSS RDSon gfs PMFPB6532UP Product data sheet gate leakage current drain-source on-state resistance forward transconductance VGS = ±8 V; VDS = 0 V [1] VDS = −5 V; ID = −1 A All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 June 2012 [1] © NXP B.V. 2012. All rights reserved. 7 of 18 PMFPB6532UP NXP Semiconductors P-channel MOSFET-Schottky combination Table 7. Characteristics …continued Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ID = −3.3 A; VDS = −10 V; VGS = −4.5 V - 4.5 6 nC Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge - 0.8 - nC - 1 - nC Ciss input capacitance - 380 - pF Coss output capacitance - 72 - pF Crss reverse transfer capacitance - 61 - pF td(on) turn-on delay time - 5 - ns tr rise time - 10 - ns td(off) tf turn-off delay time - 57 - ns fall time - 35 - ns IS = −1.3 A; VGS = 0 V - −0.75 −1 V IF = 100 mA - 225 275 mV IF = 500 mA - 285 335 mV IF = 1 A - 320 365 mV VR = 5 V - 65 220 μA VR = 5 V; Tj = 125 °C - 13 50 mA VR = 10 V - 110 400 μA VR = 20 V - 230 700 μA VR = 5 V; f = 1 MHz - 60 70 pF VGS = 0 V; VDS = −10 V; f = 1 MHz VDS = −15 V; RL = 15 Ω; VGS = −10 V; RG = 6 Ω Source-drain diode VSD source-drain voltage Schottky diode VF IR Cd [1] PMFPB6532UP Product data sheet forward voltage reverse current diode capacitance Pulse test: tp ≤ 300 μs; δ ≤ 0.01. All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 June 2012 © NXP B.V. 2012. All rights reserved. 8 of 18 PMFPB6532UP NXP Semiconductors P-channel MOSFET-Schottky combination 017aaa069 −10.0 ID (A) 017aaa070 −10−3 VGS = −3.0 V −2.0 V −8.0 ID (A) −2.4 V −2.2 V −1.8 V −6.0 (1) (2) (3) −10−4 −4.0 −1.6 V −2.0 −1.4 V 0.0 0.0 −1.0 −2.0 −3.0 VDS (V) −4.0 −10−5 0.0 Tamb = 25 °C −0.4 −0.8 VGS (V) −1.2 Tamb = 25 °C; VDS = −5 V (1) minimum values (2) typical values (3) maximum values Fig 8. MOSFET transistor: Output characteristics: drain current as a function of drain-source voltage; typical values 017aaa071 0.20 (1) MOSFET transistor: Sub-threshold drain current as a function of gate-source voltage 017aaa072 0.20 (2) RDson (Ω) Fig 9. RDSon (Ω) 0.15 0.15 (3) (4) 0.10 0.10 (5) (1) (2) (6) 0.05 0.0 −1.0 −2.0 −3.0 −4.0 −5.0 ID (A) 0.05 −6.0 0.0 0.0 Tamb = 25 °C −2.0 −4.0 VGS (V) −6.0 ID = −1 A (1) VGS = −1.5 V (1) Tamb = 150 °C (2) VGS = −1.6 V (2) Tamb = 25 °C (3) VGS = −1.8 V (4) VGS = −2 V (5) VGS = −2.5 V (6) VGS = −4.5 V Fig 10. MOSFET transistor: Drain-source on-state resistance as a function of drain current; typical values PMFPB6532UP Product data sheet Fig 11. MOSFET transistor: Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 June 2012 © NXP B.V. 2012. All rights reserved. 9 of 18 PMFPB6532UP NXP Semiconductors P-channel MOSFET-Schottky combination 017aaa073 −6.0 (1) 017aaa074 2.0 (2) a ID (A) 1.5 −4.0 (2) (1) 1.0 −2.0 0.5 0.0 0.0 −0.5 −1.0 −1.5 VGS (V) −2.0 0.0 −60 VDS > ID × RDSon 0 60 120 180 Tamb (°C) R DSon a = ----------------------------R DSon ( 25°C ) (1) Tamb = 25 °C (2) Tamb = 150 °C Fig 12. MOSFET transistor: Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa075 −1.5 Fig 13. MOSFET transistor: Normalized drain-source on-state resistance as a function of ambient temperature; typical values 017aaa076 103 (1) VGS(th) (V) C (pF) (1) −1.0 (2) 102 (2) (3) −0.5 (3) 0.0 −60 0 60 120 180 Tamb (°C) 10 −10−1 ID = −0.25 mA; VDS = VGS (1) Ciss (2) typical values (2) Coss (3) minimum values (3) Crss Fig 14. MOSFET transistor: Gate-source threshold voltage as a function of ambient temperature Product data sheet −10 VDS (V) −102 f = 1 MHz; VGS = 0 V (1) maximum values PMFPB6532UP −1 Fig 15. MOSFET transistor: Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 June 2012 © NXP B.V. 2012. All rights reserved. 10 of 18 PMFPB6532UP NXP Semiconductors P-channel MOSFET-Schottky combination 017aaa077 −5.0 VGS (V) −4.0 VDS ID −3.0 VGS(pl) −2.0 VGS(th) VGS −1.0 QGS1 0.0 0.0 QGS2 QGS 1.25 2.5 3.75 5.0 QGD QG(tot) QG (nC) 003aaa508 ID = −3.3 A; VDS = −10 V; Tamb = 25 °C Fig 16. MOSFET transistor: Gate-source voltage as a function of gate charge; typical values Fig 17. MOSFET transistor: Gate charge waveform definitions 017aaa078 −6.0 IS (A) −4.0 (1) (2) −2.0 0.0 0.0 −0.4 −0.8 VSD (V) −1.2 VGS = 0 V (1) Tamb = 150 °C (2) Tamb = 25 °C Fig 18. MOSFET transistor: Source current as a function of source-drain voltage; typical values PMFPB6532UP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 June 2012 © NXP B.V. 2012. All rights reserved. 11 of 18 PMFPB6532UP NXP Semiconductors P-channel MOSFET-Schottky combination 017aaa084 10 IF (A) (1) (2) 017aaa085 1 IR (A) 10−1 (1) 10−2 (2) 1 10−1 (3) (4) 10−3 (5) (3) 10−4 10−2 10−5 10−3 10−6 10−4 0.0 (4) 10−7 0.2 0.4 0.6 0.8 0 1.0 5 10 15 VF (V) 20 VR (V) (1) Tj = 150 °C (1) Tj = 125 °C (2) Tj = 125 °C (2) Tj = 85 °C (3) Tj = 85 °C (3) Tj = 25 °C (4) Tj = 25 °C (4) Tj = −40 °C (5) Tj = −40 °C Fig 19. Schottky diode: Forward current as a function of forward voltage; typical values 017aaa086 250 Fig 20. Schottky diode: Reverse current as a function of reverse voltage; typical values 017aaa087 2.4 Cd (pF) (1) IF(AV) (A) 200 1.6 (2) 150 (3) 100 0.8 (4) 50 0 0.0 0 5 10 15 20 0 25 50 VR (V) f = 1 MHz; Tamb = 25 °C 75 100 125 150 175 Tamb (°C) FR4 PCB, mounting pad for cathode 6 cm2 Tj = 150 °C (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig 21. Schottky diode: Diode capacitance as a function of reverse voltage; typical values PMFPB6532UP Product data sheet Fig 22. Schottky diode: Average forward current as a function of ambient temperature; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 June 2012 © NXP B.V. 2012. All rights reserved. 12 of 18 PMFPB6532UP NXP Semiconductors P-channel MOSFET-Schottky combination 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 23. Duty cycle definition 9. Package outline 2.1 1.9 0.65 max 1.1 0.9 2.1 1.9 0.77 0.57 (2×) 0.54 0.44 (2×) 0.04 max 3 4 1 6 0.65 (4×) 0.35 0.25 (6×) 0.3 0.2 Dimensions in mm 10-05-31 Fig 24. Package outline DFN2020-6 (SOT1118) PMFPB6532UP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 June 2012 © NXP B.V. 2012. All rights reserved. 13 of 18 PMFPB6532UP NXP Semiconductors P-channel MOSFET-Schottky combination 10. Soldering 2.1 0.65 0.49 0.65 0.49 0.3 0.4 (6×) (6×) solder lands 0.875 solder paste 1.05 1.15 (2×) (2×) 2.25 solder resist 0.875 occupied area Dimensions in mm 0.35 (6×) 0.45 (6×) 0.72 (2×) 0.82 (2×) sot1118_fr Fig 25. Reflow soldering footprint DFN2020-6 (SOT1118) PMFPB6532UP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 June 2012 © NXP B.V. 2012. All rights reserved. 14 of 18 PMFPB6532UP NXP Semiconductors P-channel MOSFET-Schottky combination 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMFPB6532UP v.2 20120601 Product data sheet - PMFPB6532UP v.1 Modifications: PMFPB6532UP v.1 PMFPB6532UP Product data sheet • • • Section 1.1 “General description”: updated Table 2 “Pinning”: graphic symbol drawing updated Figure 24: replaced with minimized package outline drawing 20110309 Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 June 2012 - © NXP B.V. 2012. All rights reserved. 15 of 18 PMFPB6532UP NXP Semiconductors P-channel MOSFET-Schottky combination 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. PMFPB6532UP Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 June 2012 © NXP B.V. 2012. All rights reserved. 16 of 18 PMFPB6532UP NXP Semiconductors P-channel MOSFET-Schottky combination Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PMFPB6532UP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 June 2012 © NXP B.V. 2012. All rights reserved. 17 of 18 PMFPB6532UP NXP Semiconductors P-channel MOSFET-Schottky combination 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test information . . . . . . . . . . . . . . . . . . . . . . . . 13 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Contact information. . . . . . . . . . . . . . . . . . . . . 17 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 1 June 2012 Document identifier: PMFPB6532UP