PMZ270XN

PMZ270XN N-channel TrenchMOS extremely low level FET Rev. 01. — 21 February 2008 BOTTOM VIEW Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features I Profile 55 % lower than SOT23 I Low on-state resistance I Leadless package I Footprint 90 % smaller than SOT23 I Low threshold voltage I Fast switching 1.3 Applications I Driver circuits I DC-to-DC converters I Load switching in portable appliances 1.4 Quick reference data I VDS ≤ 20 V I RDSon ≤ 340 mΩ I ID ≤ 2.15 A I Ptot ≤ 2.50 W 2. Pinning information Table 1. Pin 1 2 3 Pinning Description gate (G) source (S) drain (D) 1 3 2 Transparent top view G G mbb076 mbb076 Simplified outline Symbol D D SOT883 (SC-101) S S NXP Semiconductors PMZ270XN N-channel TrenchMOS extremely low level FET 3. Ordering information Table 2. Ordering information Package Name PMZ270XN SC-101 Description leadless ultra small plastic package; 3 solder lands; body 1.0 × 0.6 × 0.5 mm Version SOT883 Type number 4. Limiting values CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM Vesd drain-source voltage drain-gate voltage (DC) gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source current peak source current electrostatic discharge voltage Tsp = 25 °C; VGS = 4.5 V; see Figure 2 and 3 Tsp = 100 °C; VGS = 4.5 V; see Figure 2 Tsp = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 Tsp = 25 °C; see Figure 1 Tsp = 25 °C Tsp = 25 °C; pulsed; tp ≤ 10 µs all pins human body model; C = 100 pF; R = 1.5 kΩ machine model; C = 200 pF 65 35 V V Conditions 25 °C ≤ Tj ≤ 150 °C 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ Min −55 −55 Max 20 20 ±12 2.15 1.36 4.30 2.50 +150 +150 2.15 4.30 Unit V V V A A A W °C °C A A Source-drain diode Electrostatic discharge PMZ270XN_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 21 February 2008 2 of 13 NXP Semiconductors PMZ270XN N-channel TrenchMOS extremely low level FET 120 Pder (%) 80 03aa17 120 Ider (%) 80 03aa25 40 40 0 0 50 100 150 Tsp (°C) 200 0 0 50 100 150 Tsp (°C) 200 P tot P der = ----------------------- × 100 % P tot ( 25 ° C ) Fig 1. Normalized total power dissipation as a function of solder point temperature 102 ID (A) 10 ID I der = ------------------- × 100 % I D ( 25 ° C ) Fig 2. Normalized continuous drain current as a function of solder point temperature 003aac204 Limit RDSon = VDS / ID tp = 10 µs 100 µs 1 DC 1 ms 10 ms 100 ms 10−1 10−2 10−1 1 10 VDS (V) 102 Tsp = 25 °C; IDM is single pulse Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PMZ270XN_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 21 February 2008 3 of 13 NXP Semiconductors PMZ270XN N-channel TrenchMOS extremely low level FET 5. Thermal characteristics Table 4. Rth(j-sp) Rth(j-a) [1] Thermal characteristics Conditions see Figure 4 minimum footprint [1] Symbol Parameter thermal resistance from junction to solder point thermal resistance from junction to ambient Min - Typ 670 Max 50 - Unit K/W K/W Mounted on a printed-circuit board; vertical in still air. 102 003aab831 Zth(j-sp) (K/W) δ = 0.5 0.2 10 0.1 0.05 0.02 single pulse tp T P δ= tp T t 1 10-4 10-3 10-2 10-1 1 tp (s) 10 Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration PMZ270XN_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 21 February 2008 4 of 13 NXP Semiconductors PMZ270XN N-channel TrenchMOS extremely low level FET 6. Characteristics Table 5. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage ID = 10 µA; VGS = 0 V Tj = 25 °C Tj = −55 °C VGS(th) gate-source threshold voltage ID = 0.25 mA; VDS = VGS; see Figure 9 and 10 Tj = 25 °C Tj = 150 °C Tj = −55 °C IDSS drain leakage current VDS = 20 V; VGS = 0 V Tj = 25 °C Tj = 150 °C IGSS RDSon gate leakage current drain-source on-state resistance VGS = ±12 V; VDS = 0 V VGS = 4.5 V; ID = 0.2 A; see Figure 6 and 8 Tj = 25 °C Tj = 150 °C VGS = 2.5 V; ID = 0.1 A; see Figure 6 and 8 Dynamic characteristics QG(tot) QGS QGD Ciss Coss Crss td(on) tr td(off) tf VSD total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage IS = 0.3 A; VGS = 0 V; see Figure 13 VDS = 10 V; RL = 10 Ω; VGS = 4.5 V; RG = 6 Ω VGS = 0 V; VDS = 20 V; f = 1 MHz; see Figure 14 ID = 1 A; VDS = 10 V; VGS = 4.5 V; see Figure 11 and 12 0.72 0.18 0.18 34 12 8 5 11 11 6 0.8 1.2 nC nC nC pF pF pF ns ns ns ns V 270 430 440 340 540 520 mΩ mΩ mΩ 10 1 100 100 µA µA nA 0.5 0.35 1 1.5 1.8 V V V 20 18 V V Conditions Min Typ Max Unit Source-drain diode PMZ270XN_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 21 February 2008 5 of 13 NXP Semiconductors PMZ270XN N-channel TrenchMOS extremely low level FET 2.5 ID (A) 2 03am96 4.5 V 3.5 V 3V 1 RDSon (Ω) 0.8 VGS = 2.5 V 03am97 3V 1.5 2.5 V 1 0.6 3.5 V 0.4 4.5 V 0.5 2V VDS = 1.8 V 0.2 0 0 0.5 1 1.5 VDS (V) 2 0 0 0.5 1 1.5 2 ID (A) 2.5 Tj = 25 °C Tj = 25 °C Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values 2.5 ID (A) 2 25 °C 1.5 Tj = 150 °C VDS > ID × RDSon 03am98 Fig 6. Drain-source on-state resistance as a function of drain current; typical values 2 a 1.5 03af18 03af18 1 1 0.5 0.5 0 0 1 2 3 4 VGS (V) 5 0 -60 0 60 120 Tj (°C) 180 Tj = 25 °C and 150 °C; VDS > ID × RDSon R DSon a = ----------------------------R DSon ( 25 ° C ) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values PMZ270XN_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 21 February 2008 6 of 13 NXP Semiconductors PMZ270XN N-channel TrenchMOS extremely low level FET 2 VGS (th) (V) 1.5 max 03al82 10−3 ID (A) 10−4 03an65 1 typ 10−5 min typ max 0.5 min 0 −60 10−6 0 60 120 Tj (°C) 180 0 0.4 0.8 1.2 VGS (V) 1.6 ID = 1 mA; VDS = VGS Tj = 25 °C; VDS = 5 V Fig 9. Gate-source threshold voltage as a function of junction temperature 5 VGS (V) 4 ID = 1 A Tj = 25 °C VDS = 10 V 3 03an01 Fig 10. Sub-threshold drain current as a function of gate-source voltage VDS VDS IID D VGS(pl) VGS(pl) 2 VGS(th) VGS(th) 1 VGS VGS QGS1 QGS1 0 0 0.2 0.4 0.6 QG (nC) 0.8 QGS2 QGS2 QGD QGD QG(tot) QG(tot) 003aaa508 003aaa508 QGS QGS ID = 1 A; VDS = 10 V Fig 11. Gate-source voltage as a function of gate charge; typical values Fig 12. Gate charge waveform definitions PMZ270XN_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 21 February 2008 7 of 13 NXP Semiconductors PMZ270XN N-channel TrenchMOS extremely low level FET 1 RDSon (Ω) 0.8 VGS (V) = 1.8 2 03an03 102 03an00 C (pF) Ciss 0.6 2.5 0.4 3 4.5 0.2 10 Coss Crss 0 0 0.5 1 1.5 2 ID (A) 2.5 1 10−1 1 10 VDS (V) 102 Tj = 25 °C and 150 °C; VGS = 0 V VGS = 0 V; f = 1 MHz Fig 13. Source current as a function of source-drain voltage; typical values Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values PMZ270XN_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 21 February 2008 8 of 13 NXP Semiconductors PMZ270XN N-channel TrenchMOS extremely low level FET 7. Package outline Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT883 L 2 b e L1 3 b1 1 e1 A A1 E D 0 0.5 scale 1 mm DIMENSIONS (mm are the original dimensions) UNIT mm A (1) 0.50 0.46 A1 max. 0.03 b 0.20 0.12 b1 0.55 0.47 D 0.62 0.55 E 1.02 0.95 e 0.35 e1 0.65 L 0.30 0.22 L1 0.30 0.22 Note 1. Including plating thickness OUTLINE VERSION SOT883 REFERENCES IEC JEDEC JEITA SC-101 EUROPEAN PROJECTION ISSUE DATE 03-02-05 03-04-03 Fig 15. Package outline SOT883 (SC-101) PMZ270XN_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 21 February 2008 9 of 13 NXP Semiconductors PMZ270XN N-channel TrenchMOS extremely low level FET 8. Soldering 1.30 R = 0.05 (12×) 0.30 R = 0.05 (12×) 0.35 (2×) 0.90 0.20 0.25 (2×) 0.60 0.70 0.80 solder lands solder resist occupied area solder paste 0.30 (2×) 0.40 (2×) 0.50 (2×) 0.30 0.40 0.50 mbl873 Dimensions in mm Fig 16. Reflow soldering footprint for SOT883 PMZ270XN_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 21 February 2008 10 of 13 NXP Semiconductors PMZ270XN N-channel TrenchMOS extremely low level FET 9. Revision history Table 6. Revision history Release date 20080221 Data sheet status Product data sheet Change notice Supersedes Document ID PMZ270XN_1 PMZ270XN_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 21 February 2008 11 of 13 NXP Semiconductors PMZ270XN N-channel TrenchMOS extremely low level FET 10. Legal information 10.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 10.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 10.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental 10.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of NXP B.V. 11. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com PMZ270XN_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 21 February 2008 12 of 13 NXP Semiconductors PMZ270XN N-channel TrenchMOS extremely low level FET 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 21 February 2008 Document identifier: PMZ270XN_1