TEA1995T
GreenChip dual synchronous rectifier controller
Rev. 3 — 5 December 2017
1
Product data sheet
General description
The TEA1995T is the first product of a new generation of Synchronous Rectifier (SR)
controller ICs for switched mode power supplies. It incorporates an adaptive gate drive
method for maximum efficiency at any load.
The TEA1995T is a dedicated controller IC for synchronous rectification on the
secondary side of resonant converters. It has two driver stages for driving the SR
MOSFETs, which rectify the outputs of the central tap secondary transformer windings.
The two gate driver stages have their own sensing inputs and operate independently.
The TEA1995T can also be used in multi-output flyback converters with the SR MOSFET
placed at the low side.
The TEA1995T is fabricated in a Silicon-On-Insulator (SOI) process.
2
Features and benefits
2.1 Efficiency features
• Adaptive gate drive for maximum efficiency at any load
• Supply current in energy save operation below 200 μA
2.2 Application features
•
•
•
•
•
Wide supply voltage range from 4.5 V to 38 V
Dual synchronous rectification for LLC resonant in SO8 package
Synchronous rectification for multi-output flyback converters
Supports 5 V operation with logic level SR MOSFETs
Differential inputs for sensing the drain and source voltages of each SR MOSFET
2.3 Control features
• SR control without minimum on-time
• Adaptive gate drive for fast turn-off at the end of conduction
• UnderVoltage LockOut (UVLO) protection with active gate pull-down
TEA1995T
NXP Semiconductors
GreenChip dual synchronous rectifier controller
3
Applications
The TEA1995T is intended for resonant power supplies. In such applications, it can drive
two external synchronous rectifier MOSFETs for the rectification of the voltages on the
two secondary windings of the transformer. These MOSFETs replace diodes. It can be
used in all power supplies requiring high efficiency:
•
•
•
•
4
Adapters
Power supplies for desktop PC and all-in-one PC
Power supplies for television
Power supplies for servers
Ordering information
Table 1. Ordering information
Type number
TEA1995T/1
5
Package
Name
Description
Version
SO8
plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
Marking
Table 2. Marking
TEA1995T
Product data sheet
Type number
Marking code
TEA1995T/1
TEA1995
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GreenChip dual synchronous rectifier controller
6
Block diagram
VCC
V AND I
REFERENCE
UNDER
VOLTAGE
LOCKOUT
5V
REGULATOR
DRIVER
SUPPLY
11 V
ENERGY SAVE
CONTROL
IC
LOGIC
turn-on
enable
TURN ON
on regulation
off regulation
GDA
DSA
SWITCH OFF
-400 mV
-55 mV
-50 mV
+150 mV
SSA
turn-on
TURN ON
on regulation
off regulation
GDB
DSB
SWITCH OFF
-400 mV
-55 mV
-50 mV
+150 mV
SSB
GND
aaa-016986
Figure 1. TEA1995T block diagram
TEA1995T
Product data sheet
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GreenChip dual synchronous rectifier controller
7
Pinning information
7.1 Pinning
GDB
1
GND
2
DSB
3
SSB
4
IC
8
GDA
7
VCC
6
DSA
5
SSA
aaa-016990
Figure 2. TEA1995T pin configuration
7.2 Pin description
Table 3. Pin description
TEA1995T
Product data sheet
Symbol
Pin
Description
GDB
1
gate drive output MOSFET B
GND
2
ground
DSB
3
drain sense input for synchronous timing MOSFET B
SSB
4
source sense input MOSFET B
SSA
5
source sense input MOSFET A
DSA
6
drain sense input for synchronous timing MOSFET A
VCC
7
supply voltage
GDA
8
gate drive output MOSFET A
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GreenChip dual synchronous rectifier controller
8
Functional description
8.1 Introduction
The TEA1995T is a controller IC for synchronous rectification. It is perfectly suited to
be used in resonant applications. It can drive two synchronous rectifier MOSFETs on
the secondary side of the central tap transformer winding. Figure 3 shows a typical
configuration.
Vin
Qprim1
PRIMARY
SIDE
CONTROLLER
CHB
TR
Qprim2
Vout
Cout
Qsec1
DSA
GDA
SSA
VCC
IC1
IC
DSB
Qsec2
GDB
SSB
GND
aaa-016991
Figure 3. TEA1995T typical configuration
8.2 Start-up and undervoltage lockout (VCC pin)
When the voltage on the VCC pin exceeds Vstart, the IC leaves the UVLO state and
activates the SR circuitry. When the voltage drops to below Vstop, the IC reenters the
UVLO state. The SR MOSFET gate driver outputs are actively kept low. For proper
operation, the VCC pin must be decoupled with an extra capacitor (not only with Cout)
between the VCC pin and the GND pin. To reduce inductance effects because of high
gate driver currents, the extra capacitor must be connected as close as possible to the
IC.
8.3 Drain sense (DSA and DSB pins)
The drain sense pins are input pins capable of handling input voltages up to 100 V.
At positive drain sense voltages, the gate driver is in off-mode with pulled-down gate
driver pins (pins GDA or GDB). At negative drain sense voltages, the IC enables the SR
through sensing the drain source differential voltage.
TEA1995T
Product data sheet
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GreenChip dual synchronous rectifier controller
8.4 Synchronous Rectification (SR; DSA, SSA, DSB, and SSB pins)
The IC senses the voltage difference between the drain sense (pins DSA and DSB) and
the source sense (pins SSA and SSB) connections. The drain source differential voltage
of the SR MOSFET is used to drive the gate of the SR MOSFET.
When this absolute voltage difference is higher than Vact(drv), the corresponding gate
driver output turns on the external SR MOSFET. When the external SR MOSFET is
switched on, the absolute voltage difference between the drain and the source sense
connections drops to below Vact(drv). The regulation phase follows the turn-on phase.
In the regulation phase, the IC regulates the difference between the drain and the source
sense inputs to an absolute level (Vreg(drv)). When the absolute difference is higher than
Vreg(drv), the gate driver output increases the gate voltage of the external SR MOSFET
until the Vreg(drv) level is reached. The SR MOSFET does not switch off at low currents.
The IC operates without minimum on-time.
When the absolute difference is lower than Vdeact(drv), the gate driver output decreases
the gate voltage of the external SR MOSFET. The voltage waveform on the gate of the
SR MOSFET follows the waveform of the current through the SR MOSFET. When the
current through the external SR MOSFET reaches zero, the SR MOSFET is quickly
switched off.
After the SR MOSFET switch-off, the drain voltage increases. For a drain voltage above
Vswoff, a low ohmic gate pull-down of Rpd(G) keeps the gate of the SR MOSFET switched
off.
TEA1995T
Product data sheet
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TEA1995T
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GreenChip dual synchronous rectifier controller
high
current
low
current
secondary
current
0A
drain sensesource sense
voltage
0V
Vreg(drv)
Vact(drv)
td(act)(drv)
Vthreshold
SR switch
gate
driver
aaa-018615
0V
Figure 4. Synchronous rectification signals
8.5 Gate driver (GDA and GDB pins)
The gate driver circuit charges the gate of the external SR MOSFET during the rising part
of the current. The driver circuit discharges the gate during the falling part of the current.
The gate driver has a source capability of typically Isource and a sink capability of typically
Isink. The source and sink capability allow a fast turn-on and a fast turn-off of the external
SR MOSFET.
The maximum driver output voltage is limited to VG(max). This high output voltage drives
all MOSFET brands to the minimum on-state resistance.
In applications where the IC is supplied with 5 V, the maximum output voltage of the
driver is limited to 5 V. Logic level SR MOSFETs can be used.
During start-up conditions (VCC < Vstart) and UVLO, the driver output voltage is actively
pulled low.
TEA1995T
Product data sheet
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GreenChip dual synchronous rectifier controller
8.6 Source sense connection (SSA and SSB pins)
The IC is equipped with additional source sense pins (SSA and SSB). These pins are
used for the measurement of the SR MOSFET drain-to-source voltage. The source
sense input must be connected as close as possible to the source pin of the external SR
MOSFET. It minimizes errors caused by voltage difference on PCB tracks because of
parasitic inductance in combination with large dI/dt values.
TEA1995T
Product data sheet
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9
Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
−0.4
+38
V
Voltages
VCC
supply voltage
Vsense(D)A
drain sense voltage A
DC
−0.8
+100
V
Vsense(D)B
drain sense voltage B
DC
−0.8
+100
V
Vsense(S)A
source sense voltage A
DC
−0.4
+0.4
V
Vsense(S)B
source sense voltage B
DC
V
VGDA
VGDB
voltage on pin GDA
voltage on pin GDB
−0.4
+0.4
DC
[1]
−0.4
+13.0 V
DC
[1]
−0.4
+13.0 V
-
0.5
W
-
500
kHz
General
Ptot
total power dissipation
fmax
maximum frequency
Tstg
storage temperature
−55
+150
°C
Tj
junction temperature
−40
+150
°C
if not limited by Ptot
ElectroStatic Discharge (ESD)
VESD
[1]
[2]
[3]
electrostatic discharge
voltage
Human Body Model (HBM)
[2]
-
2000
V
Charged Device Model
(CDM)
[3]
-
500
V
[1] These pins are output pins that are forced by the IC (see Table 6)
[2] Human body model: Equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor.
[3] Charged device model: Equivalent to charging the IC and discharging each pin over a 1 Ω resistor.
10 Thermal characteristics
Table 5. Thermal characteristics
TEA1995T
Product data sheet
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-a)
thermal resistance from
junction to ambient
JEDEC test board
140
K/W
Rth(j-c)
thermal resistance from
junction to case
JEDEC test board
90
K/W
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GreenChip dual synchronous rectifier controller
11 Characteristics
Table 6. Characteristics
Tamb = 25 °C; VCC = 12 V; CGDA/CGDB = 10 nF (capacitors between GDA and GND and between GDB and GND). All
voltages are measured with respect to ground (pin 2). Currents are positive when flowing into the IC, unless otherwise
specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Supply voltage management (pin VCC)
Vstart
start voltage
4.35
4.55
4.75
V
Vstop
stop voltage
4.0
4.2
4.4
V
ICC(oper)
operating supply current
energy-save
140
160
180
μA
normal operation (without gate
charge)
0.9
1.1
1.3
mA
85
110
135
μs
tact(es)
energy save mode activation time
Synchronous rectification sense input (pins DSA, SSA, DSB, and SSB)
Vact(drv)
driver activation voltage
Vsense(S)A/Vsense(S)B = 0 V
−450
−400
−350
mV
Vreg(drv)
driver regulation voltage
Vsense(S)A/Vsense(S)B = 0 V
−60
−55
−50
mV
Vswoff
switch-off voltage
Vsense(S)A/Vsense(S)B = 0 V
90
150
200
mV
td(act)(drv)
driver activation delay time
Vsense(S)A/Vsense(S)B = 0 V;
normal operation;
time from step on VDSA/VDSB (2 V to
−0.5 V) to rising of VGDA/VGDB at 10 %
of end value
80
-
ns
td(deact)(drv)
driver deactivation delay time
Vsense(S)A/Vsense(S)B = 0 V;
normal operation;
time from step on VDSA/VDSB (−0.5 V
to 2 V) to falling of VGDA/VGDB at 90 %
of begin value
40
-
ns
peak current at
VCC = 5 V;VDS = −0.5 V; VG = 0 V
-
−0.4
-
A
peak current at
VCC = 12 V;VDS = −0.5 V; VG = 0 V
-
−1.0
-
A
regulation current at
VCC = 5 V;VDS = 0 V; VG = 5 V
-
90
-
mA
regulation current at
VCC = 12 V;VDS = 0 V; VG = 10 V
-
100
-
mA
peak current at VCC = 5 V;
VDS = 4 V;VG = 4 V
-
0.6
-
A
peak current at VCC = 12 V;VDS = 4 V; VG = 4 V
1.0
-
A
in off-state; VDSA/VDSB = 4 V; IGDA/
IGDB = 30 mA; VCC = 12 V
4
5
Ω
Gate driver (pins GDA and GDB)
Isource
Isink
Rpd(G)
source current
sink current
gate pull-down resistance
TEA1995T
Product data sheet
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GreenChip dual synchronous rectifier controller
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VG(max)
maximum gate voltage
VGDA/VGDB at VCC = 5 V
4.9
4.95
5.0
V
VGDA/VGDB at VCC = 12 V
10.5
10.75
11.0
V
VGDA/VGDB at VCC = 15 V to 38 V
11
12
13
V
12 Application information
A resonant switched mode power supply with the TEA1995T consists of a primary side
half-bridge, a transformer, a resonant capacitor, and an output stage. To obtain low
conduction loss rectification, SR MOSFETs are used in the output stage. The TEA1995T
controls these SR MOSFETs.
The gate drive voltage for the SR switch is derived from the voltage difference between
the corresponding drain sense and source sense pins.
Special attention must be paid to the connection of the drain sense and source sense
pins. The voltages measured on these pins are used for gate drive voltage. Wrong
measurement results in a less efficient gate drive because the gate voltage is either
too low or too high. The connections to these pins must not interfere with the power
wiring. The power wiring conducts currents with high dI/dt values. It can easily cause
measurement errors resulting from induced voltages due to parasitic inductances.
The separate source-sense pins enable the direct sensing of the source voltage of the
external MOSFETs. Using the current carrying power ground tracks is not allowed.
12.1 Application diagram resonant application
Vin
Qprim1
PRIMARY
SIDE
CONTROLLER
CHB
TR
Qprim2
Vout
Cout
Qsec1
DSA
IC1
GDA
SSA
VCC
IC
DSB
Qsec2
GDB
SSB
GND
aaa-016991
Figure 5. Typical resonant application with TEA1995T
TEA1995T
Product data sheet
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GreenChip dual synchronous rectifier controller
12.2 Application diagram multi-output flyback application
Vout2
TR
Vin
Cout2
Vout1
Cout1
Qprim
PRIMARY
SIDE
CONTROLLER
Qsec1
DSA
GDA
SSA
VCC
IC1
IC
DSB
Qsec2
GDB
SSB
GND
aaa-016995
Figure 6. Multi-output flyback application with TEA1995T
TEA1995T
Product data sheet
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GreenChip dual synchronous rectifier controller
13 Package outline
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A
X
c
y
HE
v M A
Z
5
8
A2
Q
A
(A 3)
A1
pin 1 index
θ
Lp
1
L
4
e
detail X
w M
bp
0
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (2)
e
HE
L
Lp
Q
v
w
y
Z (1)
mm
1.75
0.25
0.10
1.45
1.25
0.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
1.27
6.2
5.8
1.05
1.0
0.4
0.7
0.6
0.25
0.25
0.1
0.7
0.3
0.01
0.019 0.0100 0.20
0.014 0.0075 0.19
0.16
0.15
inches
0.010 0.057
0.069
0.004 0.049
0.05
0.244
0.039 0.028
0.041
0.228
0.016 0.024
0.01
0.01
0.028
0.004
0.012
θ
o
8
o
0
Notes
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOT96-1
076E03
MS-012
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
99-12-27
03-02-18
Figure 7. Package outline SOT96-1 (SO8)
TEA1995T
Product data sheet
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TEA1995T
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GreenChip dual synchronous rectifier controller
14 Abbreviations
Table 7. Abbreviations
TEA1995T
Product data sheet
Acronym
Description
CDM
Charged Device Model
ESD
ElectroStatic Discharge
HBM
Human Body Model
MOSFET
Metal-Oxide-Semiconductor Field-Effect Transistor
SOI
Silicon-On-Insulator
SR
Synchronous Rectification
UVLO
UnderVoltage LockOut
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GreenChip dual synchronous rectifier controller
15 Revision history
Table 8. Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
TEA1995T v.3
20171205
Product data sheet
-
TEA1995T v.2
Modifications:
• Section 10 "Thermal characteristics" has been updated.
TEA1995T v.2
20161130
Product data sheet
-
TEA1995T v.1
TEA1995T v.1
20150730
Product data sheet
-
-
TEA1995T
Product data sheet
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16 Legal information
16.1 Data sheet status
Document status
[1][2]
Product status
[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple
devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
16.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
16.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not
give any representations or warranties, expressed or implied, as to the
accuracy or completeness of such information and shall have no liability
for the consequences of use of such information. NXP Semiconductors
takes no responsibility for the content in this document if provided by an
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liability towards customer for the products described herein shall be limited
in accordance with the Terms and conditions of commercial sale of NXP
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Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
TEA1995T
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes
no representation or warranty that such applications will be suitable
for the specified use without further testing or modification. Customers
are responsible for the design and operation of their applications and
products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications
and products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with
their applications and products. NXP Semiconductors does not accept any
liability related to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications or products, or
the application or use by customer’s third party customer(s). Customer is
responsible for doing all necessary testing for the customer’s applications
and products using NXP Semiconductors products in order to avoid a
default of the applications and the products or of the application or use by
customer’s third party customer(s). NXP does not accept any liability in this
respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or
the grant, conveyance or implication of any license under any copyrights,
patents or other industrial or intellectual property rights.
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NXP Semiconductors
GreenChip dual synchronous rectifier controller
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Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In
the event that customer uses the product for design-in and use in automotive
applications to automotive specifications and standards, customer (a) shall
use the product without NXP Semiconductors’ warranty of the product for
such automotive applications, use and specifications, and (b) whenever
customer uses the product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at customer’s own
TEA1995T
Product data sheet
risk, and (c) customer fully indemnifies NXP Semiconductors for any liability,
damages or failed product claims resulting from customer design and use
of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
16.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
GreenChip — is a trademark of NXP B.V.
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 December 2017
© NXP B.V. 2017. All rights reserved.
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TEA1995T
NXP Semiconductors
GreenChip dual synchronous rectifier controller
Contents
1
2
2.1
2.2
2.3
3
4
5
6
7
7.1
7.2
8
8.1
8.2
8.3
8.4
8.5
8.6
9
10
11
12
12.1
12.2
13
14
15
16
General description ............................................ 1
Features and benefits .........................................1
Efficiency features ............................................. 1
Application features ........................................... 1
Control features ................................................. 1
Applications .........................................................2
Ordering information .......................................... 2
Marking .................................................................2
Block diagram ..................................................... 3
Pinning information ............................................ 4
Pinning ............................................................... 4
Pin description ................................................... 4
Functional description ........................................5
Introduction ........................................................ 5
Start-up and undervoltage lockout (VCC pin) .... 5
Drain sense (DSA and DSB pins) ..................... 5
Synchronous Rectification (SR; DSA, SSA,
DSB, and SSB pins) ..........................................6
Gate driver (GDA and GDB pins) ...................... 7
Source sense connection (SSA and SSB
pins) ................................................................... 8
Limiting values .................................................... 9
Thermal characteristics ......................................9
Characteristics .................................................. 10
Application information .................................... 11
Application diagram resonant application ........ 11
Application diagram multi-output flyback
application ........................................................12
Package outline .................................................13
Abbreviations .................................................... 14
Revision history ................................................ 15
Legal information .............................................. 16
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section 'Legal information'.
© NXP B.V. 2017.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 5 December 2017
Document identifier: TEA1995T