12A02CH-TL-E

Ordering number : EN7482A 12A02CH Bipolar Transistor http://onsemi.com –12V, –1A, Low VCE(sat) PNP Single CPH3 Applications • Low-frequency Amplifier, high-speed switching, small motor drive, muting circuit Features • • • Large current capacity Low collector-to-emitter saturation voltage (resistance) RCE (sat) typ.=285mΩ [IC=1A, IB=50mA] Small ON-resistance (Ron) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage VEBO IC ICP Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature PC Tj Storage Temperature Tstg Mounted on a ceramic board (600mm2×0.8mm) --15 V --12 V --5 V --1 A --2 A 700 mW 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7015A-003 • Package : CPH3 • JEITA, JEDEC : SC-59, TO-236, SOT-23 • Minimum Packing Quantity : 3,000 pcs./reel 12A02CH-TL-E 0.6 2.9 0.15 Packing Type: TL LOT No. AD 0.2 0.05 1.6 2.8 Marking 3 0.9 0.2 0.6 TL 1 0.95 2 0.4 1 : Base 2 : Emitter 3 : Collector Electrical Connection 3 CPH3 1 2 Semiconductor Components Industries, LLC, 2013 August, 2013 82212 TKIM/O2203 TSIM TA-100610 No.7482-1/6 12A02CH Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Ratings Conditions min typ Unit max ICBO IEBO hFE VCB= --12V, IE=0A VEB= --4V, IC=0A VCE= --2V, IC= --10mA fT Cob VCE= --2V, IC= --50mA VCB= --10V, f=1MHz VCE(sat) VBE(sat) IC= --400mA, IB= --20mA IC= --400mA, IB= --20mA V(BR)CBO V(BR)CEO IC= --10μA, IE=0A IC= --1mA, RBE=∞ --15 --12 V V(BR)EBO ton IE= --10μA, IC=0A --5 V tstg tf See specified Test Circuit. 300 --100 nA --100 nA 700 450 MHz 6 pF --120 --240 mV --0.9 --1.2 mV V 30 ns 75 ns 15 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT OUTPUT IB2 RB VR 50Ω RL + + 220μF 470μF VBE=5V VCC= --5V IC=20IB1= --20IB2= --400mA Ordering Information memo 3,000pcs./reel Pb Free --1000 --5mA --700 --600 --500 VCE= --2V --7mA --3mA --2mA --400 --300 --1mA --200 --0.5mA --800 --600 --400 --200 --25° C A 10 5m -- --1 IC -- VBE --1200 Ta= 75°C 2 5°C mA mA --30 mA --20 Collector Current, IC -- mA --800 Shipping CPH3 IC -- VCE --1000 --900 Package Collector Current, IC -- mA Device 12A02CH-TL-E --100 0 0 IB=0 --100 --200 --300 --400 --500 --600 --700 --800 --900 --1000 Collector-to-Emitter Voltage, VCE -- mV IT05094 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V --1.2 IT05095 No.7482-2/6 12A02CH hFE -- IC 1000 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV DC Current Gain, hFE 7 Ta=75°C 25°C 5 --25°C 3 2 100 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 2 --100 5°C =7 Ta 5°C --2 5 25 3 °C 2 --10 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 10 7 5 3 2 3 5 7 2 --10 Collector-to-Base Voltage, VCB -- V ON-resistance, Ron -- Ω 3 IB 2 1.0 7 5 3 2 0.1 --0.1 2 3 5 7--1000 IT05097 3 2 25°C --1.0 Ta= --25°C 7 75°C 5 3 2 2 3 5 7 --10 2 3 5 7 --100 2 3 5 7--1000 IT05099 fT -- IC VCE= --2V 5 3 2 100 7 5 3 2 2 3 5 7 --10 2 3 5 7 --100 2 3 5 7--1000 IT05101 Collector Current, IC -- mA OUT 1kΩ 5 5 7 --100 5 PC -- Ta 800 IN 3 IC / IB=20 IT05100 1kΩ f=1MHz 2 VBE(sat) -- IC 10 --1.0 3 700 Collector Dissipation, PC -- mW 7 5 7 --10 7 Ron -- IB 10 3 1000 Gain-Bandwidth Product, fT -- MHz Output Capacitance, Cob -- pF 2 2 2 Collector Current, IC -- mA f=1MHz 1.0 --1.0 Ta= 3 2 IT05098 Cob -- VCB 3 °C 75 5°C --2 °C --10 7 5 --0.1 --1.0 5 7--1000 Collector Current, IC -- mA 25 3 2 7 5 7 --100 7 5 --10 IC / IB=50 7 3 2 Collector Current, IC -- mA VCE(sat) -- IC --1000 IC / IB=20 --1.0 --1.0 5 7--1000 IT05096 Collector Current, IC -- mA VCE(sat) -- IC --1000 7 5 VCE= --2V M ou 600 nt 500 ed on ac er am ic 400 bo ar 300 d( 60 0m m2 ✕ 200 0. 8m m ) 100 0 2 3 5 7 --1.0 2 Base Current, IB -- mA 3 5 7 --10 IT06091 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT05103 No.7482-3/6 12A02CH Embossed Taping Specification 12A02CH-TL-E No.7482-4/6 12A02CH Outline Drawing 12A02CH-TL-E Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No.7482-5/6 12A02CH ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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