2N5194G

2N5194G, 2N5195G Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Features http://onsemi.com • Complement to NPN 2N5191, 2N5192 • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Collector−Emitter Voltage 2N5194G 2N5195G Symbol Value Unit VCEO Vdc 60 80 COLLECTOR 2, 4 Collector−Base Voltage 2N5194G 2N5195G VCB Emitter−Base Voltage VEB 5.0 Vdc Collector Current IC 4.0 Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 40 320 W W/°C – 65 to +150 °C/W Operating and Storage Junction Temperature Range 4 AMPERE POWER TRANSISTORS PNP SILICON 60 − 80 VOLTS Vdc 60 80 TJ, Tstg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Indicates JEDEC registered data. 3 BASE 1 EMITTER TO−225 CASE 77−09 STYLE 1 1 2 3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 3.12 °C/W MARKING DIAGRAM YWW 2 N519xG Y WW 2N519x G = Year = Work Week = Device Code x = 4 or 5 = Pb−Free Package ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 December, 2013 − Rev. 15 1 Device Package Shipping 2N5194G TO−225 (Pb−Free) 500 Units / Bulk 2N5195G TO−225 (Pb−Free) 500 Units / Bulk Publication Order Number: 2N5194/D 2N5194G, 2N5195G ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2) Symbol Characteristic Min Max Unit OFF CHARACTERISTICS VCEO(sus) Collector−Emitter Sustaining Voltage (Note 3) (IC = 0.1 Adc, IB = 0) 2N5194G 2N5195G Vdc 60 80 Collector Cutoff Current (VCE = 60 Vdc, IB = 0) 2N5194G (VCE = 80 Vdc, IB = 0) 2N5195G ICEO Collector Cutoff Current (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) 2N5194G (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) 2N5195G (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) 2N5194G (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) 2N5195G ICEX Collector Cutoff Current (VCB = 60 Vdc, IE = 0) 2N5194G (VCB = 80 Vdc, IE = 0) 2N5195G ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − − mAdc − 1.0 − 1.0 mAdc − −0.1 − 0.1 − 2.0 − 2.0 mAdc − 0.1 − 0.1 − 1.0 mAdc ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 1.5 Adc, VCE = 2.0 Vdc) 2N5194G 2N5195G (IC = 4.0 Adc, VCE = 2.0 Vdc) 2N5194G 2N5195G hFE Collector−Emitter Saturation Voltage (Note 3) (IC = 1.5 Adc, IB = 0.15 Adc) (IC = 4.0 Adc, IB = 1.0 Adc) VCE(sat) Base−Emitter On Voltage (Note 3) (IC = 1.5 Adc, VCE = 2.0 Vdc) VBE(on) − 25 20 100 80 10 7.0 − − − − 0.6 1.4 − 1.2 2.0 − Vdc Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) fT MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates JEDEC registered data. 3. Pulse Test: Pulse Width ≤ 300Ăms, Duty Cycle ≤Ă2.0%. http://onsemi.com 2 2N5194G, 2N5195G hFE , DC CURRENT GAIN (NORMALIZED) 10 7.0 5.0 TJ = 150°C VCE = 2.0 V VCE = 10 V 3.0 2.0 1.0 0.7 0.5 25°C -55°C 0.3 0.2 0.1 0.004 0.007 0.01 0.02 0.03 0.05 0.1 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.5 1.0 3.0 4.0 2.0 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 2.0 1.6 1.2 IC = 10 mA 100 mA 1.0 A 3.0 A 0.8 TJ = 25°C 0.4 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 50 70 100 200 300 500 Figure 2. Collector Saturation Region TJ = 25°C VOLTAGE (VOLTS) 1.6 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V 0.4 VCE(sat) @ IC/IB = 10 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 θV, TEMPERATURE COEFFICIENTS (mV/°C) 2.0 2.0 3.0 4.0 +2.5 *APPLIES FOR IC/IB ≤ hFE @ VCE TJ = -65°C to +150°C +2.0 +1.5 +1.0 +0.5 *qVC for VCE(sat) 0 -0.5 -1.0 -1.5 qVB for VBE -2.0 -2.5 0.005 0.01 0.020.03 0.05 0.1 0.2 0.3 0.5 1.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 3. “On” Voltage Figure 4. Temperature Coefficients http://onsemi.com 3 2.0 3.0 4.0 RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) 2N5194G, 2N5195G 103 IC, COLLECTOR CURRENT (A) μ VCE = 30 Vdc 102 TJ = 150°C 101 100°C 100 REVERSE 10-1 FORWARD 25°C 10-2 10-3 +0.4 +0.3 +0.2 +0.1 ICES 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 107 VCE = 30 V 106 IC = 10 x ICES 105 IC = 2 x ICES (TYPICAL ICES VALUES OBTAINED FROM FIGURE 5) 103 102 20 40 60 VBE, BASE-EMITTER VOLTAGE (VOLTS) VCC TURN-ON PULSE RC RB SCOPE APPROX +9.0 V +4.0 V RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS t3 TURN-OFF PULSE 200 Ceb 100 Ccb 70 t1 ≤ 7.0 ns 100 < t2 < 500 ms t3 < 15 ns DUTY CYCLE ≈ 2.0% 50 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Capacitance 2.0 2.0 IC/IB = 10 TJ = 25°C 1.0 1.0 0.3 0.2 tr @ VCC = 10 V td @ VBE(off) = 2.0 V 0.03 0.02 0.2 0.3 0.05 0.07 0.1 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) IB1 = IB2 IC/IB = 10 ts′ = ts - 1/8 tf TJ = 25°C ts′ 0.7 0.5 tr @ VCC = 30 V t, TIME (s) μ t, TIME (s) μ 160 300 Figure 7. Switching Time Equivalent Test Circuit 0.1 0.07 0.05 140 500 Cjd