2N5210

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5209/D Amplifier Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 2N5209 2N5210 1 2 3 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 50 50 4.0 50 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Collector Cutoff Current (VCB = 35 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO ICBO IEBO 50 50 — — — — 50 50 Vdc Vdc nAdc nAdc Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 2N5209 2N5210 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = 100 µAdc, VCE = 5.0 Vdc) hFE 2N5209 2N5210 2N5209 2N5210 2N5209 2N5210 VCE(sat) VBE(on) 100 200 150 250 150 250 — — 300 600 — — — — 0.7 0.85 Vdc Vdc — (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc)(1) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base – Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 mAdc) SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 500 µAdc, VCE = 5.0 Vdc, f = 20 MHz) Collector–Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) Noise Figure (IC = 20 µAdc, VCE = 5.0 Vdc, RS = 22 kΩ, f = 1.0 kHz) (IC = 20 µAdc, VCE = 5.0 Vdc, RS = 10 kΩ, f = 1.0 kHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. 2N5209 2N5210 NF 2N5209 2N5210 2N5209 2N5210 — — — — 3.0 2.0 4.0 3.0 fT Ccb hfe 150 250 600 900 dB 30 — — 4.0 MHz pF — RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data 2N5209 2N5210 NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) NOISE VOLTAGE 30 BANDWIDTH = 1.0 Hz 20 en , NOISE VOLTAGE (nV) en , NOISE VOLTAGE (nV) IC = 10 mA 3.0 mA 1.0 mA RS ≈ 0 20 RS ≈ 0 f = 10 Hz 10 7.0 10 kHz 5.0 1.0 kHz 100 Hz 30 BANDWIDTH = 1.0 Hz 10 7.0 5.0 300 µA 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 3.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 100 kHz 5.0 10 Figure 2. Effects of Frequency 10 7.0 5.0 In, NOISE CURRENT (pA) 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 RS ≈ 0 20 10 µA 50 100 200 3.0 mA 1.0 mA 300 µA 100 µA 30 µA 0 10 20 20 16 NF, NOISE FIGURE (dB) Figure 3. Effects of Collector Current BANDWIDTH = 1.0 Hz IC = 10 mA BANDWIDTH = 10 Hz to 15.7 kHz 12 500 µA 100 µA 4.0 10 µA IC = 1.0 mA 8.0 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 4. Noise Current 100 Hz NOISE DATA 300 200 VT, TOTAL NOISE VOLTAGE (nV) 100 70 50 30 20 10 7.0 5.0 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) 20 BANDWIDTH = 1.0 Hz 100 µA 3.0 mA 1.0 mA 300 µA 30 µA 10 µA IC = 10 mA 16 NF, NOISE FIGURE (dB) Figure 5. Wideband Noise Figure IC = 10 mA 3.0 mA 1.0 mA 300 µA 12 8.0 100 µA 4.0 BANDWIDTH = 1.0 Hz 0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) 30 µA 10 µA Figure 6. Total Noise Voltage Figure 7. Noise Figure Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 2N5209 2N5210 h FE, DC CURRENT GAIN (NORMALIZED) 4.0 3.0 VCE = 5.0 V 2.0 TA = 125°C 25°C 1.0 0.7 0.5 0.4 0.3 0.2 0.01 – 55°C 0.02 0.03 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (mA) 1.0 2.0 3.0 5.0 10 Figure 8. DC Current Gain 1.0 0.8 V, VOLTAGE (VOLTS) RθVBE, BASE–EMITTER TEMPERATURE COEFFICIENT (mV/ °C) TJ = 25°C – 0.4 – 0.8 0.6 VBE @ VCE = 5.0 V – 1.2 TJ = 25°C to 125°C 0.4 – 1.6 0.2 VCE(sat) @ IC/IB = 10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 – 2.0 – 55°C to 25°C – 2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 20 50 100 Figure 9. “On” Voltages f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) Figure 10. Temperature Coefficients 8.0 6.0 C, CAPACITANCE (pF) 4.0 3.0 2.0 Cob Ccb Ceb Cib TJ = 25°C 500 300 200 100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VCE = 5.0 V TJ = 25°C 1.0 0.8 0.1 0.2 1.0 2.0 5.0 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 11. Capacitance Figure 12. Current–Gain — Bandwidth Product 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data 2N5209 2N5210 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– A R P SEATING PLANE B F L K D XX G H V 1 J C N N SECTION X–X DIM A B C D F G H J K L N P R V CASE 029–04 (TO–226AA) ISSUE AD STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola Small–Signal Transistors, FETs and Diodes Device Data 5 2N5209 2N5210 Motorola reserves the right to make changes without further notice to any products herein. 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