2N6517G

NPN − 2N6515, 2N6517; PNP − 2N6520 High Voltage Transistors NPN and PNP Features http://onsemi.com • Voltage and Current are Negative for PNP Transistors • These are Pb−Free Devices* COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Vdc 250 350 VCBO 2N6515 2N6517, 2N6520 Emitter − Base Voltage 1 EMITTER 2 BASE Vdc PNP 250 350 VEBO 2N6515, 2N6517 2N6520 1 EMITTER Vdc 6.0 5.0 Base Current IB 250 mAdc Collector Current − Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C TJ, Tstg −55 to +150 °C Operating and Storage Junction Temperature Range COLLECTOR 3 NPN Unit VCEO 2N6515 2N6517, 2N6520 Collector − Base Voltage Value TO−92 CASE 29 STYLE 1 1 12 3 STRAIGHT LEAD BULK PACK 2 3 BENT LEAD TAPE & REEL AMMO PACK THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM 2N 65xx AYWW G G xx = 15, 17, or 20 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 5 1 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Publication Order Number: 2N6515/D NPN − 2N6515, 2N6517; PNP − 2N6520 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 250 350 − − 250 350 − − 6.0 5.0 − − − − 50 50 − − 50 50 2N6515 2N6517, 2N6520 35 20 − − (IC = 10 mAdc, VCE = 10 Vdc) 2N6515 2N6517, 2N6520 50 30 − − (IC = 30 mAdc, VCE = 10 Vdc) 2N6515 2N6517, 2N6520 50 30 300 200 (IC = 50 mAdc, VCE = 10 Vdc) 2N6515 2N6517, 2N6520 45 20 220 200 (IC = 100 mAdc, VCE = 10 Vdc) 2N6515 2N6517, 2N6520 25 15 − − − − − − 0.30 0.35 0.50 1.0 − − − 0.75 0.85 0.90 Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 2N6515 2N6517, 2N6520 Collector−Base Breakdown Voltage (IC = 100 mAdc, IE = 0 ) Vdc V(BR)CBO 2N6515 2N6517, 2N6520 Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Vdc V(BR)EBO 2N6515, 2N6517 2N6520 Collector Cutoff Current (VCB = 150 Vdc, IE = 0) (VCB = 250 Vdc, IE = 0) 2N6515 2N6517, 2N6520 Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) 2N6515, 2N6517 2N6520 Vdc ICBO nAdc IEBO nAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) hFE − Collector−Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Vdc Base−Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) VBE(sat) Base−Emitter On Voltage (IC = 100 mAdc, VCE = 10 Vdc) VBE(on) − 2.0 Vdc fT 40 200 MHz Ccb − 6.0 pF − − 80 100 Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (Note 1) (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) Collector−Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Emitter−Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb 2N6515, 2N6517 2N6520 pF SWITCHING CHARACTERISTICS Turn−On Time (VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc) ton − 200 ms Turn−Off Time (VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc) toff − 3.5 ms 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 NPN − 2N6515, 2N6517; PNP − 2N6520 hFE , DC CURRENT GAIN 200 VCE = 10 V TJ = 125°C 100 25°C 70 −55°C 50 30 20 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 1. DC Current Gain NPN 2N6515 200 200 TJ = 125°C VCE = −10 V 100 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN VCE = 10 V 25°C 70 50 −55°C 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 100 25°C 70 −55°C 50 30 20 10 −1.0 50 70 100 100 70 50 TJ = 25°C VCE = 20 V f = 20 MHz 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) −2.0 −3.0 −5.0 −7.0 −10 −20 −30 IC, COLLECTOR CURRENT (mA) −50 −70 −100 Figure 3. DC Current Gain PNP 2N6520 f, T CURRENT−GAIN  BANDWIDTH PRODUCT (MHz) f, T CURRENT−GAIN  BANDWIDTH PRODUCT (MHz) Figure 2. DC Current Gain NPN 2N6517 30 TJ = 125°C 50 70 100 Figure 4. Current−Gain − Bandwidth Product NPN 2N6515, 2N6517 100 70 50 TJ = 25°C VCE = −20 V f = 20 MHz 30 20 10 −1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 IC, COLLECTOR CURRENT (mA) −50 −70 −100 Figure 5. Current−Gain − Bandwidth Product PNP 2N6520 http://onsemi.com 3 NPN − 2N6515, 2N6517; PNP − 2N6520 −1.4 1.4 TJ = 25°C 1.2 −1.2 0.8 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.0 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 0.4 0.2 0 1.0 VCE(sat) @ IC/IB = 5.0 2.0 3.0 −1.0 −0.8 VBE(sat) @ IC/IB = 10 −0.6 VBE(on) @ VCE = −10 V −0.4 −0.2 VCE(sat) @ IC/IB = 10 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 0 −1.0 70 100 1.5 1.0 0.5 0 RθV, TEMPERATURE COEFFICIENTS (mV/°C) RθV, TEMPERATURE COEFFICIENTS (mV/°C) IC   + 10 IB 2.0 25°C to 125°C RqVC for VCE(sat) −55°C to 25°C −0.5 −1.0 −1.5 −2.0 −2.5 1.0 −55°C to 125°C RqVB for VBE 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 2.0 1.5 C, CAPACITANCE (pF) C, CAPACITANCE (pF) 20 0.5 Ccb −55°C to 25°C −1.0 −1.5 RqVC for VCE(sat) −55°C to 125°C −2.0 −2.5 −1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 IC, COLLECTOR CURRENT (mA) −50 −70 −100 TJ = 25°C 20 10 7.0 5.0 2.0 1.0 −0.2 50 100 200 Ceb 30 3.0 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) RqVB for VBE −0.5 2.0 0.5 25°C to 125°C 0 3.0 1.0 0.2 IC   + 10 IB 1.0 100 70 50 Ceb 10 7.0 5.0 −50 −70 −100 Figure 9. Temperature Coefficients PNP 2N6520 TJ = 25°C 30 VCE(sat) @ IC/IB = 5.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 IC, COLLECTOR CURRENT (mA) 2.5 Figure 8. Temperature Coefficients NPN 2N6515, 2N6517 100 70 50 VCE(sat) @ IC/IB = 10 Figure 7. “On” Voltages PNP 2N6520 Figure 6. “On” Voltages NPN 2N6515, 2N6517 2.5 TJ = 25°C Figure 10. Capacitance NPN 2N6515, 2N6517 Ccb −0.5 −1.0 −2.0 −5.0 −10 −20 −50 VR, REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance PNP 2N6520 http://onsemi.com 4 −10 0 −20 0 NPN − 2N6515, 2N6517; PNP − 2N6520 1.0k 700 500 td @ VBE(off) = 2.0 V VCE(off) = 100 V IC/IB = 5.0 TJ = 25°C tr 100 70 50 100 70 50 30 30 20 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 tr 200 20 10 1.0 10 −1.0 70 100 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 IC, COLLECTOR CURRENT (mA) Figure 12. Turn−On Time NPN 2N6515, 2N6517 10k 7.0k 5.0k t, TIME (ns) −50 −70 −100 Figure 13. Turn−On Time PNP 2N6520 2.0k ts ts 1.0k 700 3.0k 500 2.0k 1.0k 700 500 VCE(off) = −100 V IC/IB = 5.0 TJ = 25°C td @ VBE(off) = 2.0 V 300 200 t, TIME (ns) t, TIME (ns) 300 1.0k 700 500 tf tf 300 VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25°C VCE(off) = −100 V IC/IB = 5.0 IB1 = IB2 TJ = 25°C 200 100 70 50 300 200 30 100 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 20 −1.0 70 100 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 IC, COLLECTOR CURRENT (mA) Figure 14. Turn−Off Time NPN 2N6515, 2N6517 −50 −70 −100 Figure 15. Turn−Off Time PNP 2N6520 +VCC VCC ADJUSTED FOR VCE(off) = 100 V +10.8 V 2.2 k 20 k 50 W SAMPLING SCOPE 1.0 k 50 1/2MSD7000 −9.2 V PULSE WIDTH ≈ 100 ms tr, tf ≤ 5.0 ns DUTY CYCLE ≤ 1.0% FOR PNP TEST CIRCUIT, REVERSE ALL VOLTAGE POLARITIES APPROXIMATELY −1.35 V (ADJUST FOR V(BE)off = 2.0 V) Figure 16. Switching Time Test Circuit http://onsemi.com 5 RESISTANCE (NORMALIZED) NPN − 2N6515, 2N6517; PNP − 2N6520 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 SINGLE PULSE 0.05 0.1 0.07 0.05 SINGLE PULSE ZqJC(t) = r(t) • RqJC TJ(pk) − TC = P(pk) ZqJC(t) ZqJA(t) = r(t) • RqJA TJ(pk) − TA = P(pk) ZqJA(t) 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k Figure 17. Thermal Response IC, COLLECTOR CURRENT (mA) 500 TA = 25°C 200 100 tP 1.0 ms TC = 25°C 50 FIGURE A 10 ms 100 ms PP 100 ms PP 20 CURRENT LIMIT THERMAL LIMIT (PULSE CURVES @ TC = 25°C) SECOND BREAKDOWN LIMIT 10 5.0 2.0 CURVES APPLY BELOW RATED VCEO 1.0 0.5 0.5 1.0 t1 2N6515 1/f t DUTYCYCLE + t1f + 1 tP PEAK PULSE POWER = PP 2N6517, 2N6520 2.0 5.0 10 20 50 100 200 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 500 Figure 18. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data ORDERING INFORMATION Package Shipping† 2N6515RLRMG TO−92 (Pb−Free) 2000 Ammo Pack 2N6517G TO−92 (Pb−Free) 5000 Unit / Bulk 2N6517RLRPG TO−92 (Pb−Free) 2000 Ammo Pack 2N6520RLRAG TO−92 (Pb−Free) 2000 Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM SCALE 1:1 1 12 3 STRAIGHT LEAD BULK PACK DATE 09 MAR 2007 2 3 BENT LEAD TAPE & REEL AMMO PACK A B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. STRAIGHT LEAD BULK PACK R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X−X N 1 INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- N A R NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. BENT LEAD TAPE & REEL AMMO PACK B P T SEATING PLANE G K DIM A B C D G J K N P R V D X X J V 1 C N SECTION X−X MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --- STYLES ON PAGE 2 DOCUMENT NUMBER: STATUS: 98ASB42022B ON SEMICONDUCTOR STANDARD NEW STANDARD: © Semiconductor Components Industries, LLC, 2002 October, DESCRIPTION: 2002 − Rev. 0 TO−92 (TO−226) http://onsemi.com 1 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. Case Outline Number: PAGE 1 OFXXX 3 TO−92 (TO−226) CASE 29−11 ISSUE AM DATE 09 MAR 2007 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 2: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 6: PIN 1. GATE 2. SOURCE & SUBSTRATE 3. DRAIN STYLE 7: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 8: PIN 1. DRAIN 2. GATE 3. SOURCE & SUBSTRATE STYLE 9: PIN 1. BASE 1 2. EMITTER 3. BASE 2 STYLE 10: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 11: PIN 1. ANODE 2. CATHODE & ANODE 3. CATHODE STYLE 12: PIN 1. MAIN TERMINAL 1 2. GATE 3. MAIN TERMINAL 2 STYLE 13: PIN 1. ANODE 1 2. GATE 3. CATHODE 2 STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE STYLE 15: PIN 1. ANODE 1 2. CATHODE 3. ANODE 2 STYLE 16: PIN 1. ANODE 2. GATE 3. CATHODE STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER STYLE 18: PIN 1. ANODE 2. CATHODE 3. NOT CONNECTED STYLE 19: PIN 1. GATE 2. ANODE 3. CATHODE STYLE 20: PIN 1. NOT CONNECTED 2. CATHODE 3. ANODE STYLE 21: PIN 1. COLLECTOR 2. EMITTER 3. BASE STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN STYLE 23: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 24: PIN 1. EMITTER 2. COLLECTOR/ANODE 3. CATHODE STYLE 25: PIN 1. MT 1 2. GATE 3. MT 2 STYLE 26: PIN 1. VCC 2. GROUND 2 3. OUTPUT STYLE 27: PIN 1. MT 2. SUBSTRATE 3. MT STYLE 28: PIN 1. CATHODE 2. ANODE 3. GATE STYLE 29: PIN 1. NOT CONNECTED 2. ANODE 3. CATHODE STYLE 30: PIN 1. DRAIN 2. GATE 3. SOURCE STYLE 31: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 32: PIN 1. BASE 2. COLLECTOR 3. EMITTER STYLE 33: PIN 1. RETURN 2. INPUT 3. OUTPUT STYLE 34: PIN 1. INPUT 2. GROUND 3. LOGIC STYLE 35: PIN 1. GATE 2. COLLECTOR 3. EMITTER DOCUMENT NUMBER: STATUS: 98ASB42022B ON SEMICONDUCTOR STANDARD NEW STANDARD: © Semiconductor Components Industries, LLC, 2002 October, DESCRIPTION: 2002 − Rev. 0 TO−92 (TO−226) http://onsemi.com 2 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. Case Outline Number: PAGE 2 OFXXX 3 DOCUMENT NUMBER: 98ASB42022B PAGE 3 OF 3 ISSUE AM REVISION ADDED BENT−LEAD TAPE & REEL VERSION. REQ. BY J. SUPINA. DATE 09 MAR 2007 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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