2N6667G

2N6667, 2N6668 Darlington Silicon Power Transistors Designed for general−purpose amplifier and low speed switching applications. • High DC Current Gain − • • • • • • hFE = 3500 (Typ) @ IC = 4.0 Adc Collector−Emitter Sustaining Voltage − @ 200 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6667 = 80 Vdc (Min) − 2N6668 Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max)@ IC = 5.0 Adc Monolithic Construction with Built−In Base−Emitter Shunt Resistors TO−220AB Compact Package Complementary to 2N6387, 2N6388 These Devices are Pb−Free and are RoHS Compliant* www.onsemi.com PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60−80 V, 65 W 4 COLLECTOR 1 BASE ≈8k 2 3 TO−220 CASE 221A STYLE 1 ≈ 120 MARKING DIAGRAM EMITTER Figure 1. Darlington Schematic 2N666x AYWWG x A Y WW G = 7 or 8 = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 8 1 Package Shipping 2N6667G TO−220 (Pb−Free) 50 Units/Rail 2N6668G TO−220 (Pb−Free) 50 Units/Rail Publication Order Number: 2N6667/D 2N6667, 2N6668 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS (Note 1) Rating Symbol 2N6667 2N6668 Unit VCEO 60 80 Vdc Collector−Base Voltage VCB 60 80 Vdc Emitter−Base Voltage VEB 5.0 Vdc Collector Current − Continuous − Peak IC 10 15 Adc Base Current IB 250 mAdc Total Device Dissipation @ TC = 25_C Derate above 25_C PD 65 0.52 W W/_C Total Device Dissipation @ TA = 25_C Derate above 25_C PD 2.0 0.016 W W/_C TJ, Tstg – 65 to + 150 _C Collector−Emitter Voltage Operating and Storage Junction Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RqJC 1.92 _C/W Thermal Resistance, Junction to Ambient RqJA 62.5 _C/W ELECTRICAL CHARACTERISTICS (Note 1) (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 2) (IC = 200 mAdc, IB = 0) 2N6667 2N6668 VCEO(sus) 60 80 − − Vdc Collector Cutoff Current (VCE = 60 Vdc, IB = 0) (VCE = 80 Vdc, IB = 0) 2N6667 2N6668 ICEO − − 1.0 1.0 mAdc Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 1.5 Vdc) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) (VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) 2N6667 2N6668 2N6667 2N6668 ICEX − − − − 300 300 3.0 3.0 mAdc IEBO − 5.0 mAdc hFE 1000 100 20000 − − Collector−Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.01 Adc) (IC = 10 Adc, IB = 0.1 Adc) VCE(sat) − − 2.0 3.0 Vdc Base−Emitter Saturation Voltage(IC = 5.0 Adc, IB = 0.01 Adc) (IC = 10 Adc, IB = 0.1 Adc) VBE(sat) − − 2.8 4.5 Vdc Current Gain − Bandwidth Product (IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz) |hfe| 20 − − Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob − 200 pF Small−Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz) hfe 1000 − − Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc) (IC = 10 Adc, VCE = 3.0 Vdc) DYNAMIC CHARACTERISTICS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Indicates JEDEC Registered Data. 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. http://onsemi.com 2 2N6667, 2N6668 VCC - 30 V RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPES e.g., 1N5825 USED ABOVE IB [ 100 mA MSD6100 USED BELOW IB [ 100 mA RC SCOPE TUT V2 RB APPROX +8V FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 tr, tf v 10 ns DUTY CYCLE = 1.0% 51 0 D1 V1 [8k [ 120 + 4.0 V APPROX 25 μs - 12 V Figure 2. Switching Times Test Circuit TC 80 10 7 5 3 60 3 t, TIME (s) μ PD, POWER DISSIPATION (WATTS) TA 4 TC 2 40 1 20 TA tr 2 ts 1 0.7 0.5 0.3 0 20 40 60 80 100 T, TEMPERATURE (°C) 120 140 160 .td tf 0.2 0 VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C 0.1 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMPS) Figure 4. Typical Switching Times Figure 3. Power Derating r(t) NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.5 0.3 0.2 0.2 0.1 0.05 0.1 ZθJC(t) = r(t) RθJC RθJC = 1.92°C/W MAX 0.05 0.03 0.02 0.02 0.01 0.01 0.01 P(pk) D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RθJC(t) t1 t2 SINGLE PULSE DUTY CYCLE, D = t1/t2 0.02 0.05 0.1 0.2 0.5 1 2 5 t, TIME (ms) 10 Figure 5. Thermal Response http://onsemi.com 3 20 50 100 200 500 1000 2N6667, 2N6668 IC, COLLECTOR CURRENT (AMPS) 20 100 μs 5 ms 10 5 3 2 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. dc 1 ms 1 0.5 0.3 0.2 0.1 0.05 0.03 0.02 TJ = 150°C 2N6667 BONDING WIRE LIMIT 2N6668 THERMAL LIMIT @ TC = 25°C SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 1 2 3 7 10 20 30 50 5 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 6. Maximum Safe Operating Area 300 5000 TJ = 25°C 2000 C, CAPACITANCE (pF) hFE , SMALL-SIGNAL CURENT GAIN 10,000 1000 500 TC = 25°C VCE = 4 VOLTS IC = 3 AMPS 200 100 Cob Cib 100 70 50 50 20 10 1 2 5 7 10 3 20 30 50 70 100 f, FREQUENCY (kHz) 1 2 5 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Typical Small−Signal Current Gain Figure 8. Typical Capacitance VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE = 3 V 10,000 7000 5000 3000 2000 TJ = 150°C TJ = 25°C 1000 700 500 300 200 0.1 30 0.1 200 300 500 1000 20,000 hFE, DC CURRENT GAIN 200 TJ = - 55°C 0.2 3 0.3 0.5 0.7 1 2 IC, COLLECTOR CURRENT (AMPS) 5 7 10 Figure 9. Typical DC Current Gain 0.2 100 50 2.6 TJ = 25°C 2.2 IC = 2 A 4A 6A 1.8 1.4 1 0.6 0.3 0.5 0.7 1 2 3 5 7 IB, BASE CURRENT (mA) 10 20 30 Figure 10. Typical Collector Saturation Region http://onsemi.com 4 2N6667, 2N6668 +5 θV, TEMPERATURE COEFFICIENTS (mV/°C) 2.5 TJ = 25°C 2 1.5 1 0.5 0.1 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3 V VCE(sat) @ IC/IB = 250 0.2 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMPS) 5 7 10 +4 *IC/IB ≤ +3 hFE@VCE + 3.0V 3 25°C to 150°C +2 +1 -55°C to 25°C 0 -1 ∗θVC for VCE(sat) -2 -3 θVB for VBE 25°C to 150°C -55°C to 25°C -4 -5 0.1 0.2 0.3 0.5 0.7 103 REVERSE FORWARD VCE = 30 V 102 TJ = 150°C 101 100°C 100 25°C 10-1 +0.6 2 3 5 7 Figure 12. Typical Temperature Coefficients 105 104 1 IC, COLLECTOR CURRENT (AMP) Figure 11. Typical “On” Voltages IC, COLLECTOR CURRENT (A) μ V, VOLTAGE (VOLTS) 3 +0.4 +0.2 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 13. Typical Collector Cut−Off Region http://onsemi.com 5 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 CASE 221A ISSUE AK DATE 13 JAN 2022 SCALE 1:1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. BASE EMITTER COLLECTOR EMITTER STYLE 3: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE STYLE 7: PIN 1. 2. 3. 4. CATHODE ANODE CATHODE ANODE STYLE 8: PIN 1. 2. 3. 4. CATHODE ANODE EXTERNAL TRIP/DELAY ANODE STYLE 9: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR STYLE 10: PIN 1. 2. 3. 4. GATE SOURCE DRAIN SOURCE STYLE 11: PIN 1. 2. 3. 4. DRAIN SOURCE GATE SOURCE STYLE 12: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE NOT CONNECTED DOCUMENT NUMBER: DESCRIPTION: 98ASB42148B TO−220 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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