2SC3646T-TD-E

DATA SHEET www.onsemi.com Bipolar Transistor ELECTRICAL CONNECTION (–)100 V, (–)1 A, Low VCE(sat), (PNP)NPN Single PCP 2 2 1 2SA1416, 2SC3646 3 Adoption of FBET and MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed Ultrasmall Size Making it Easy to Provide High−Density Small−Sized Hybrid IC’s These Devices are Pb−Free and are RoHS Compliant 1 SPECIFICATIONS ( ): 2SA1416 ABSOLUTE MAXIMUM RATINGS at Ta = 25°C VCBO (−) 120 V Collector to Emitter Voltage VCEO (−) 100 V Emitter to Base Voltage VEBO (−) 6 V Collector Current IC (−) 1 A Collector Current (Pulse) ICP (−) 2 A Collector Dissipation PC 500 mW 1.3 W Junction Temperature TJ 150 °C Storage Temperature TSTG −55 to +150 °C RANK 2SA1416 LOT No. Collector to Base Voltage CB Unit AB Value Collector Dissipation (Note 1) 3 MARKING DIAGRAM Symbol Parameter 2 SOT−89 / PCP−1 CASE 419AU LOT No. • 3 2SC3646 2SA1416 Features • • • • 1: Base 2: Collector 3: Emitter 1 RANK 2SC3646 ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on ceramic substrate (250 mm2 x 0.8 mm). © Semiconductor Components Industries, LLC, 2005 January, 2022 − Rev. 2 1 Publication Order Number: 2SA1416/D 2SA1416, 2SC3646 ELECTRICAL CHARACTERISTICS at TA = 25°C Ratings Symbol Parameter Min Conditions Typ Max Unit Collector Cutoff Current ICBO VCB = (-)100 V, IE = 0 A (-)100 nA Emitter Cutoff Current IEBO VEB = (-)4V, IC = 0 A (-)100 nA DC Current Gain hFE VCE = (-)5 V, IC = (-)100 mA fT VCE = (-)10 V, IC = (-)100 mA 120 MHz Cob VCB = (-)10 V, f = 1 MHz (13)8.5 pF Collector to Emitter Saturation Voltage VCE(sat) IC = (-)400 mA, IB = (-)40 mA (−0.2)0.1 (-0.6)0.4 V Base to Emitter Saturation Voltage VBE(sat) IC = (-)400 mA, IB = (-)−40 mA (-)0.85 (-)1.2 V Collector to Base Breakdown Voltage V(BR)CBO IC = (-)10 mA, IE = 0 A (-)120 V Collector to Emitter Breakdown Voltage V(BR)CEO IC = (-)1 mA, RBE = ∞ (-)100 V Emitter to Base Breakdown Voltage V(BR)EBO IE = (-)10 mA, IC = 0 A (-)6 V Gain−Bandwidth Product Output Capacitance Turn−On Time ton Storage Time tstg Fall Time 100* See specified Test Circuit tf 400* (80)80 ns (700)850 ns (40)50 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *The 2SA1416/2SC3646 are classified by 100 mA hFE as follows : Rank R S T hFE 100 to 200 140 to 280 200 to 400 Switching Time Test Circuit IB1 PW = 20 ms D.C. ≤1% IB2 INPUT RB VR 50 W RL + 100 mF + 470 mF −5 V 50 V IC = 10 IB1= −10 IB2 = 400 mA (For PNP, the polarity is reversed) www.onsemi.com 2 2SA1416, 2SC3646 TYPICAL CHARACTERISTICS 2SA1416 1.0 −30 mA −25 mA −0.8 −15 mA −20 mA Collector Current, IC (A) Collector Current, IC (A) −1.0 −10 mA −5 mA −0.6 −3 mA −0.4 −2 mA −1 mA −0.2 0 −1 −2 −3 0.8 15 mA 10 mA 5 mA 0.6 3 mA 2 mA 0.4 1 mA 0.2 IB = 0 mA 0 30 mA 2SC3646 25 mA 20 mA −4 0 −5 IB = 0 mA 0 Collector to Emitter Voltage, VCE (V) 1 2 Figure 1. IC − VCE −2.5 mA 500 2SA1416 −2.0 mA −400 −1.5 mA −300 −1.0 mA −200 −0.5 mA −100 0 IB = 0 mA 0 −10 −20 −30 −40 1.5 mA 300 1.0 mA 200 0.5 mA 100 IB = 0 mA 0 10 Collector Current, IC (A) Collector Current, IC (A) 50 2SC3646 VCE = 5 V 1.0 25°C −0.4 −25°C 0.8 0.6 Ta = 75°C 25°C 0.4 −25°C 0.2 −0.2 0 40 1.2 −0.8 Ta = 75°C 30 Figure 4. IC − VCE 2SA1416 VCE = −5 V −0.6 20 Collector to Emitter Voltage, VCE (V) Figure 3. IC − VCE −1.0 2SC3646 2.0 mA 400 0 −50 2.5 mA Collector to Emitter Voltage, VCE (V) −1.2 5 Figure 2. IC − VCE Collector Current, IC (mA) Collector Current, IC (mA) −500 4 3 Collector to Emitter Voltage, VCE (V) 0 −0.2 −0.4 −0.6 −0.8 −1.0 0 −1.2 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage, VBE (V) Base to Emitter Voltage, VBE (V) Figure 5. IC − VBE Figure 6. IC − VBE www.onsemi.com 3 1.2 2SA1416, 2SC3646 TYPICAL CHARACTERISTICS (continued) 1000 7 5 2SA1416 VCE = −5 V DC Current Gain, hFE DC Current Gain, hFE 1000 7 5 Ta = 75°C 3 2 −25°C 25°C 100 7 5 7 5 2 2 3 5 7 −0.1 2 3 2 5 7 −1.0 10 3 100 Output Capacitance, Cob (pF) 2SC3646 3 2 2 3 5 7 0.1 2 3 Collector−to−Emitter Saturation Voltage, VCE(sat) (mV) −100 Ta = 75°C −25°C 3 2SC3646 For PNP, minus sign is omitted 7 1.0 2 3 5 7 10 2 3 5 7 100 3 5 7 −0.1 2 3 5 7 −1.0 5 3 2 100 7 Ta = 75°C 5 2 2 −25°C 25°C 7 0.01 2 3 5 7 0.1 2 3 Collector Current, IC (A) Collector Current, IC (A) Figure 12. VCE(sat) − IC Figure 11. VCE(sat) − IC www.onsemi.com 4 2 2SC3646 IC / IB = 10 7 3 25°C 2 7 5 1000 2 7−0.01 10 Figure 10. Cob − VCB 3 3 2SA1416 2 Figure 9. fT − IC 2SA1416 IC / IB = 10 2 3 2 5 7 1.0 5 2 5 7 −1.0 Collector−to−Base Voltage, VCB (V) 7 5 3 Collector Current, IC (A) −1000 7 2 2SA1416 / 2SC3646 f = 1 MHz 7 5 3 For PNP, minus sign is omitted 7 0.01 5 7 −0.1 Figure 8. hFE − IC 2SA1416 10 3 Figure 7. hFE − IC 100 5 2 Collector Current, IC (A) 2SA1416 / 2SC3646 VCE = 10 V 7 7−0.01 Collector Current, IC (A) 2 Gain−Bandwidth Product, fT (MHz) −25°C 25°C 100 2 7−0.01 Ta = 75°C 2 3 3 Collector−to−Emitter Saturation Voltage, VCE(sat) (mV) 3 3 10 2SC3646 VCE = 5 V 5 7 1.0 2 2SA1416, 2SC3646 TYPICAL CHARACTERISTICS (continued) 10 2SA1416 IC / IB = 10 7 Base−to−Emitter Saturation Voltage, VBE(sat) (V) Base−to−Emitter Saturation Voltage, VBE(sat) (V) −10 5 3 2 Ta = −25°C −1.0 7 5 3 25°C 7 −0.01 2 3 −75°C 5 7 −0.1 2 3 5 7 −1.0 5 3 2 Ta = −25°C 1.0 7 5 3 2 2SC3646 IC / IB = 10 7 25°C 7 −0.01 2 3 Collector Current, IC (A) 1.6 ICP = 2 A 1 ms IC = 1 A 10 ms DC operation 0.1 7 5 For PNP, minus sign is omitted 3 2SA1416 / 2SC3646 2 Single pulse Ta = 25°C 0.01 Mounted on a ceramic board 7 (250 mm2 x 0.8 mm) 5 5 7 1.0 2 3 5 7 10 2 2 3 5 7 −1.0 2 Collector Current, IC (A) Collector Dissipation, PC (W) Collector Current, IC (A) 1.0 7 5 3 2 5 7 −0.1 Figure 14. VBE(sat) − IC Figure 13. VBE(sat) − IC 5 3 2 −75°C 100 ms 2SA1416 / 2SC3646 1.4 1.3 1.2 Mounted on a ceramic board (250 mm2 x 0.8 mm) 1.0 0.8 0.6 0.5 0.4 No heat sink 0.2 3 5 7 100 0 2 Collector−to−Emitter Voltage, VCE (V) 0 20 40 60 80 100 120 Ambient Temperature, Ta (°C) Figure 15. ASO Figure 16. PC − Ta www.onsemi.com 5 140 160 2SA1416, 2SC3646 ORDERING INFORMATION Device Marking Package Shipping† 2SA1416S−TD−E AB SOT−89 / PCP−1 (Pb−Free) 1000 / Tape & Reel 2SA1416T−TD−E 2SC3646S−TD−E CB 2SC3646T−TD−E †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−89 / PCP−1 CASE 419AU ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON79746E SOT−89 / PCP−1 DATE 30 APR 2012 Electronic versions are uncontrolled except when accessed directly from the Document Repository. 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