2SK3745LS

Ordering number : EN8635A 2SK3745LS N-Channel Power MOSFET http://onsemi.com 1500V, 2A, 13Ω, TO-220F-3FS Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching High reliability (Adoption of HVP process) Micaless package facilitating mounting Avalanche resistance guarantee Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit 1500 V ±20 V 2 A ID* IDP Drain Current (Pulse) 4 A 2.0 W Allowable Power Dissipation PD 35 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 41 mJ 2 A Avalanche Current *2 Tc=25°C *Shows chip capability *1 VDD=50V, L=20mH, IAV=2A (Fig.1) *2 L≤20mH, single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7528-001 • Package : TO-220F-3FS • JEITA, JEDEC : SC-67 • Minimum Packing Quantity : 50 pcs./magazine 4.7 10.16 3.18 2SK3745LS-1E Marking Electrical Connection 6.68 3.3 2.54 3.23 15.8 15.87 2 K3745 LOT No. 1 12.98 2.76 1.47 MAX 3 0.8 1 2.54 2 3 0.5 2.54 Semiconductor Components Industries, LLC, 2013 July, 2013 1 : Gate 2 : Drain 3 : Source TO-220F-3FS 53012 TKIM TC-00002761/N1505QB MSIM TB-00001890 No.8635-1/7 2SK3745LS Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Ratings Conditions min typ 1500 ID=1mA, VGS=0V VDS=1200V, VGS=0V Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=16V, VDS=0V VDS=10V, ID=1mA 2.5 Forward Transfer Admittance | yfs | VDS=20V, ID=1A 0.7 Static Drain-to-Source On-State Resistance RDS(on) ID=1A, VGS=10V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD μA ±10 μA 1.4 IS=2A, VGS=0V V S 10 VDS=200V, VGS=10V, ID=2A 13 Ω 380 pF 70 pF 40 pF 12 ns 37 ns 152 ns 59 ns 37.5 nC 2.7 nC 20 nC 0.88 1.2 V Fig.2 Switching Time Test Circuit 10V 0V ≥50Ω RG VDD=200V VIN ID=1A RL=200Ω VIN DUT VDD 50Ω 100 3.5 See Fig.2 L 10V 0V Unit V VDS=30V, f=1MHz Fig.1 Avalanche Resistance Test Circuit max D PW=10μs D.C.≤0.5% VOUT G 2SK3745LS P.G RGS=50Ω S Ordering Information Device 2SK3745LS-1E Package Shipping memo TO-220F-3FS 50pcs./magazine Pb Free No.8635-2/7 2SK3745LS ID -- VDS 4.0 VDS=20V pulse 8V 2.5 6V 2.0 1.5 5V 1.0 Tc= --25°C 2.5 10V 3.0 Drain Current, ID -- A Drain Current, ID -- A 3.5 ID -- VGS 3.0 Tc=25°C pulse 2.0 25°C 1.5 75°C 1.0 0.5 0.5 VGS=4V 0 0 0 5 10 15 20 25 30 35 40 45 Drain-to-Source Voltage, VDS -- V 50 0 4 6 8 10 12 14 16 18 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 30 2 IT07118 20 IT07119 RDS(on) -- Tc 30 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 25 20 Tc=75°C 25°C 10 --25°C 5 2 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V | yfs | -- ID °C 25 1.0 = Tc 5 A =1 ID 10 5 --25 0 5°C --2 °C 75 3 2 5 7 2 0.1 3 5 7 Drain Current, ID -- A 2 1.0 125 150 IT07121 1.0 7 5 3 2 0.1 7 5 0.4 0.6 0.8 1.0 Diode Forward Voltage, VSD -- V 1.2 IT07123 Ciss, Coss, Crss -- VDS 5 f=1MHz 3 2 Ciss, Coss, Crss -- pF td(off) 2 100 tf 7 5 3 tr 2 1000 7 5 Ciss 3 2 Co ss 100 7 5 Crss 3 2 td(on) 10 0.1 100 3 2 IT07122 VDD=200V VGS=10V 3 75 VGS=0V 0.01 0.2 3 SW Time -- ID 5 50 IS -- VSD 3 2 3 25 10 7 5 2 =1 S G V , Case Temperature, Tc -- °C 3 7 15 IT07120 VDS=20V 0.1 Switching Time, SW Time -- ns 20 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 5 18 0V 0 --50 0 0 20 5°C 25°C --25°C 15 25 Tc= 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω ID=1A 10 2 3 5 7 1.0 Drain Current, ID -- A 2 3 IT09037 0 5 10 15 20 25 30 35 40 Drain-to-Source Voltage, VDS -- V 45 50 IT09038 No.8635-3/7 2SK3745LS VGS -- Qg 10 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 7 6 5 4 3 2 10 ID=2A 2 μs 3 8 0μ s 1m s 1 10 0ms C 0m op s er at io n 1.0 7 5 D 3 2 Operation in this area is limited by RDS(on). 0.1 7 5 3 Tc=25°C Single pulse 2 1 0 10 0 20 30 Total Gate Charge, Qg -- nC 0.01 1.0 40 2 3 5 7 10 Allowable Power Dissipation, PD -- W 1.5 1.0 0.5 0 3 5 7 100 2 3 5 7 1000 2 IT07127 PD -- Tc 40 2.0 2 Drain-to-Source Voltage, VDS -- V IT07126 PD -- Ta 2.5 Allowable Power Dissipation, PD -- W IDP=4A(PW≤10μs) 10 9 ASO 7 5 VDS=200V ID=2A 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT07128 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT07129 No.8635-4/7 2SK3745LS Magazine Specification 2SK3745LS-1E No.8635-5/7 2SK3745LS Outline Drawing 2SK3745LS-1E Mass (g) Unit 1.8 mm * For reference No.8635-6/7 2SK3745LS Note on usage : Since the 2SK3745LS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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