2SK3823

2SK3823 Ordering number : ENN8241 2SK3823 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 Gate-to-Source Voltage VGSS ±20 V ID 40 A Drain Current (DC) Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% V 160 A 1.75 W Allowable Power Dissipation PD 45 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS 56 mJ Avalanche Current *2 IAV 40 A Tc=25°C Note : *1 VDD=20V, L=50µH, IAV=40A *2 L≤50µH, Single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0 VDS=60V, VGS=0 VGS(off) yfs VGS= ±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=20A RDS(on)1 RDS(on)2 ID=20A, VGS=10V ID=20A, VGS=4V Ratings min typ Unit max 60 V ±10 µA µA 2.6 V 21 27.5 mΩ 29 41 mΩ 1 1.2 16 Marking : K3823 28 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31005QA TS IM TB-00001199 No.8241-1/4 2SK3823 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 1780 Output Capacitance 266 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 197 pF Turn-ON Delay Time td(on) See specified Test Circuit. 16.5 ns Rise Time tr td(off) See specified Test Circuit. 160 ns See specified Test Circuit. 160 ns tf See specified Test Circuit. 160 ns Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=30V, VGS=10V, ID=40A 40 nC Gate-to-Source Charge Qgs VDS=30V, VGS=10V, ID=40A 6.5 nC Gate-to-Drain “Miller” Charge Qgd VDS=30V, VGS=10V, ID=40A 11.5 Diode Forward Voltage VSD IS=40A, VGS=0 1.08 nC 1.5 V Package Dimensions unit : mm 2052C 10.2 3.6 4.5 1.3 18.0 15.1 2.7 6.3 5.1 14.0 5.6 1.2 0.8 0.4 2.7 1 2 3 1 : Gate 2 : Drain 3 : Source 2.55 SANYO : TO-220 2.55 Switching Time Test Circuit Avalanche Resistance Test Circuit VDD=30V VIN 10V 0V L ID=20A RL=1.5Ω VIN D ≥50Ω VOUT PW=10µs D.C.≤1% 2SK3823 10V 0V G 50Ω VDD 2SK3823 P.G 50Ω S No.8241-2/4 2SK3823 Tc=25°C VDS=10V 25° 2 C 5°C 6V 8V ID -- VGS 80 70 10 V 70 4V 30 20 40 30 20 VGS=3V 10 Tc= -- 50 Tc =7 5° C --25 ° 25 °C C 50 40 60 Drain Current, ID -- A Drain Current, ID -- A 60 10 0 0 0 0.5 1.0 1.5 2.0 2.5 0 3.0 Drain-to-Source Voltage, VDS -- V 1 2 3 4 5 6 Gate-to-Source Voltage, VGS -- V IT08833 RDS(on) -- VGS 70 75 °C ID -- VDS 80 IT08834 RDS(on) -- Tc 60 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 50 40 30 Tc=75°C 25°C 20 --25°C 10 0 2 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 3 °C 25 °C -25 = °C Tc 75 7 5 3 2 1.0 7 5 0.1 20 10 0 --25 25 50 75 100 125 150 IT08836 IF -- VSD VGS=0 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 5 7 0 0.6 0.9 1.2 1.5 Diode Forward Voltage, VSD -- V IT08838 Ciss, Coss, Crss -- VDS 5 VDD=30V VGS=10V 3 0.3 IT08837 SW Time -- ID 5 f=1MHz 3 td(off) 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns =10V , VGS 0A I D=2 100 7 5 3 2 5 10 30 =4V VGS Case Temperature, Tc -- °C VDS=10V 2 , 20A I D= 0 --50 10 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 7 40 IT08835 yfs -- ID 100 50 --25°C 60 Tc=75 °C 25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=20A tf 100 7 5 tr 3 2 td(on) Ciss 2 1000 7 5 Coss Crss 3 2 10 7 0.1 100 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 IT08839 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT08840 No.8241-3/4 2SK3823 VGS -- Qg 10 VDS=30V ID=40A 8 7 6 5 4 3 3 2 10 15 20 25 30 Total Gate Charge, Qg -- nC 2 3 5 7 1.0 Allowable Power Dissipation, PD -- W 1.0 0.5 0 3 5 7 10 2 3 5 7 100 IT08842 PD -- Tc 60 1.5 2 Drain-to-Source Voltage, VDS -- V IT08841 1.75 10 10 ms 0 ms DC op era tio n Tc=25°C Single pulse 0.1 0.1 40 PD -- Ta 2.0 Allowable Power Dissipation, PD -- W 35 Operation in this area is limited by RDS(on). 3 2 1 5 ID=40A 10 7 5 2 0