2SK3826

2SK3826 Ordering number : ENN8243 2SK3826 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V 26 A Drain Current (DC) ID IDP Drain Current (Pulse) PW≤10µs, duty cycle≤1% 104 A 1.75 W Allowable Power Dissipation PD 45 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS 80 mJ Avalanche Current *2 IAV 26 A Tc=25°C Note : *1 VDD=20V, L=200µH, IAV=26A *2 L≤200µH, Single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0 VDS=100V, VGS=0 VGS(off) yfs VGS= ±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=13A RDS(on)1 RDS(on)2 ID=13A, VGS=10V ID=13A, VGS=4V Ratings min typ Unit max 100 V ±10 µA µA 2.6 V 46 60 mΩ 57 80 mΩ 1 1.2 11 Marking : K3826 19 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31005QA TS IM TB-00001201 No.8243-1/4 2SK3826 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 2150 Output Capacitance 160 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 110 pF Turn-ON Delay Time td(on) See specified Test Circuit. 20 ns Rise Time tr td(off) See specified Test Circuit. 34 ns See specified Test Circuit. 185 ns tf See specified Test Circuit. 62 ns Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=50V, VGS=10V, ID=26A 42 nC Gate-to-Source Charge Qgs VDS=50V, VGS=10V, ID=26A 7.2 nC Gate-to-Drain “Miller” Charge Qgd VDS=50V, VGS=10V, ID=26A 9.2 Diode Forward Voltage VSD IS=26A, VGS=0 1.0 nC 1.2 V Package Dimensions unit : mm 2052C 10.2 3.6 4.5 1.3 18.0 15.1 2.7 6.3 5.1 14.0 5.6 1.2 0.8 0.4 2.7 1 2 3 1 : Gate 2 : Drain 3 : Source 2.55 SANYO : TO-220 2.55 Switching Time Test Circuit Avalanche Resistance Test Circuit VDD=50V VIN 10V 0V L ID=13A RL=3.85Ω VIN D ≥50Ω VOUT PW=10µs D.C.≤1% 2SK3826 10V 0V G 50Ω VDD 2SK3826 P.G 50Ω S No.8243-2/4 2SK3826 VDS=10V 6V V 45 10 40 Drain Current, ID -- A 30 25 20 15 10 35 30 25 20 15 10 VGS=3V 5 5 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Drain-to-Source Voltage, VDS -- V 0 5.0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 90 80 Tc=75°C 60 25°C 50 40 --25°C 30 3.0 3.5 4.0 4.5 5.0 IT08869 RDS(on) -- Tc 110 100 90 V =4 S 80 , VG 3A 70 =1 ID 60 V 10 S= VG A, 50 13 I D= 40 30 20 10 2 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 0 --50 10 7 = Tc 5 --2 75 3 Forward Current, IF -- A °C 25 5°C °C 2 1.0 7 5 3 0.1 50 75 100 125 150 IT08871 IF -- VSD 100 7 5 3 2 3 10 25 Case Temperature, Tc -- °C VDS=10V 2 0 --25 IT08870 yfs -- ID 7 Forward Transfer Admittance, yfs -- S 2.5 VGS=0 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 25°C --25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 100 70 2.0 120 110 20 0.01 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 5 7 0 3 Ciss, Coss, Crss -- pF 5 tr td(on) 1.5 IT08873 Ciss 2 tf 2 1.2 f=1MHz 3 100 3 0.9 Ciss, Coss, Crss -- VDS 5 2 7 0.6 Diode Forward Voltage, VSD -- V VDD=50V VGS=10V td(off) 0.3 IT08872 SW Time -- ID 5 Switching Time, SW Time -- ns 1.5 130 ID=13A 5 1.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 120 0.5 IT08868 Tc=75 °C Drain Current, ID -- A 4V 35 Tc= 75° C --25 °C 40 Tc= --25° 25°C C 8V 25 °C Tc=25°C 45 ID -- VGS 50 75° C ID -- VDS 50 1000 7 5 3 Coss 2 Crss 100 10 7 0.1 7 5 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 IT08874 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT08875 No.8243-3/4 2SK3826 VGS -- Qg 10 VDS=50V ID=26A 8 100 7 5 7 3 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 6 5 4 1 3 2 10 15 20 25 30 35 Total Gate Charge, Qg -- nC 45 1.0 0.5 0 tio n Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 IT08877 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W 1.5 op era PD -- Tc 60 1.75 10 m 0m s s 10 Operation in this area is limited by RDS(on). IT08876 PD -- Ta 2.0 Allowable Power Dissipation, PD -- W 40 DC 0.1 0.1 0