3LN01SS-TL-E

Ordering number : EN6546C 3LN01SS N-Channel Small Signal MOSFET http://onsemi.com 30V, 0.15A, 3.7Ω, Single SSFP Features • • • Low ON-resistance Ultrahigh-speed switching 2.5V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Conditions Ratings Unit VDSS VGSS Gate to Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) 30 V 0.15 A 0.6 A 0.15 W Channel Temperature PD Tch 150 °C Storage Temperature Tstg --55 to +150 °C Allowable Power Dissipation PW≤10μs, duty cycle≤1% V ±10 This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Ordering & Package Information Package Dimensions unit : mm (typ) 7029A-003 Device 3LN01SS-TL-E 3LN01SS-TL-H 1.4 0.1 3 0.8 0 to 0.02 0.3 1.4 0.3 0.25 1 2 Shipping memo 3LN01SS-TL-E SSFP SC-81 8,000 pcs./reel Pb-Free 3LN01SS-TL-H SSFP SC-81 8,000 pcs./reel Pb-Free and Halogen Free Packing Type: TL 0.2 0.6 0.07 YA LOT No. 0.07 Marking LOT No. 0.45 Package TL 1 2 3 1 : Gate 2 : Source 3 : Drain Electrical Connection 3 SSFP 1 2 Semiconductor Components Industries, LLC, 2013 June, 2013 61213 TKIM TC-00002938/62712 TKIM/32406PE MSIM TB-00002158/52200 TSIM TA-1986 No.6546-1/6 3LN01SS Electrical Characteristics at Ta=25°C Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS IDSS IGSS Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage VGS(off) | yfs | Forward Transfer Admittance Static Drain to Source On-State Resistance Input Capacitance Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V Ratings min typ Unit max 30 VGS=±8V, VDS=0V VDS=10V, ID=100μA 0.4 VDS=10V, ID=80mA 0.15 V 1 μA ±10 μA 1.3 0.22 V S RDS(on)1 ID=80mA, VGS=4V 2.9 3.7 Ω RDS(on)2 ID=40mA, VGS=2.5V 3.7 5.2 Ω RDS(on)3 ID=10mA, VGS=1.5V 6.4 12.8 Ciss Ω 7.0 pF Output Capacitance Coss 5.9 pF Reverse Transfer Capacitance Crss 2.3 pF Turn-ON Delay Time td(on) tr 19 ns 65 ns 155 ns Rise Time Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=10V, f=1MHz See specified Test Circuit. VDS=10V, VGS=10V, ID=150mA 120 ns 1.58 nC 0.26 nC 0.31 IS=150mA, VGS=0V 0.87 nC 1.2 V Switching Time Test Circuit 4V 0V VDD=15V VIN VIN PW=10μs D.C.≤1% D ID=80mA RL=187.5Ω VOUT G 3LN01SS P.G 50Ω S No.6546-2/6 3LN01SS VGS=1.5V 0.06 0.04 °C 0.10 25 0.05 0.02 0 0 0 0.2 0.4 0.6 0.8 0 1.0 Drain to Source Voltage, VDS -- V 0.5 1.0 1.5 2.0 2.5 VGS=4V Static Drain to Source On-State Resistance, RDS(on) -- Ω 9 8 7 6 80mA 4 ID=40mA 3 IT00030 RDS(on) -- ID 10 Ta=25°C 5 3.0 Gate to Source Voltage, VGS -- V IT00029 RDS(on) -- VGS 10 Static Drain to Source On-State Resistance, RDS(on) -- Ω --25 °C 75 °C 0.15 Ta =7 5° C --2 5° C 0.08 0.20 °C 0.10 Ta= 0.25 Drain Current, ID -- A V V 3.0 4.0V 0.12 VDS=10V V 2.0 2.5 3.5V 6.0 V Drain Current, ID -- A 0.14 ID -- VGS 0.30 25 ID -- VDS 0.16 2 7 5 Ta=75°C 25°C 3 --25°C 2 1 1.0 0.01 0 0 1 2 3 4 5 7 6 8 9 Gate to Source Voltage, VGS -- V 10 Static Drain to Source On-State Resistance, RDS(on) -- Ω Static Drain to Source On-State Resistance, RDS(on) -- Ω Ta=75°C 25°C --25°C 2 1.0 0.01 2 3 5 7 2 0.1 Drain Current, ID -- A 5V , mA =2. V GS V =4.0 40 I D= , VGS A 80m I D= 4 3 2 1 0 --60 --40 --20 0 20 40 60 80 2 10 Ta=75°C 7 5 --25°C 3 25°C 2 2 3 5 100 Ambient Temperature, Ta -- °C 120 140 160 IT00035 7 0.01 2 3 Drain Current, ID -- A Forward Transfer Admittance, | yfs | -- S Static Drain to Source On-State Resistance, RDS(on) -- Ω 5 IT00032 3 5 IT00034 | yfs | -- ID 1.0 6 5 3 VGS=1.5V IT00033 RDS(on) -- Ta 7 2 0.1 5 1.0 0.001 5 3 7 7 7 3 5 RDS(on) -- ID 100 VGS=2.5V 5 3 Drain Current, ID -- A RDS(on) -- ID 10 2 IT00031 VDS=10V 7 5 3 -Ta= 2 25°C 75°C 25°C 0.1 7 5 3 2 0.01 0.01 2 3 5 7 0.1 Drain Current, ID -- A 2 3 5 IT00036 No.6546-3/6 3LN01SS IS -- VSD 1.0 7 7 --2 5°C 25 0.1 °C 5° C 2 5 3 2 0.01 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Diode Forward Voltage, VSD -- V 3 td(off) tf 2 100 7 tr 5 3 td(on) 2 Gate to Source Voltage, VGS -- V 5 3 2 10 Ciss Coss 3 Crss 2 5 7 2 0.1 IT00038 VGS -- Qg 10 VDS=10V ID=150mA 9 5 3 Drain Current, ID -- A f=1MHz 7 2 IT00037 7 Ciss, Coss, Crss -- pF 5 10 0.01 1.2 Ciss, Coss, Crss -- VDS 100 VDD=15V VGS=4V 7 Switching Time, SW Time -- ns 3 Ta =7 Source Current, IS -- A 5 SW Time -- ID 1000 VGS=0V 8 7 6 5 4 3 2 1 1.0 0 0 2 4 6 8 10 12 14 16 Drain to Source Voltage, VDS -- V 20 IT00039 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 IT00040 PD -- Ta 0.2 Allowable Power Dissipation, PD -- W 18 0.15 0.1 0.05 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT01964 No.6546-4/6 3LN01SS Outline Drawing 3LN01SS-TL-E, 3LN01SS-TL-H Land Pattern Example Mass (g) Unit 0.0018 mm * For reference Unit: mm 1.2 0.5 0.5 0.45 0.45 0.45 0.45 No.6546-5/6 3LN01SS Note on usage : Since the 3LN01SS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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