3LP01SS-TL-H

Ordering number : EN6648B 3LP01SS P-Channel Small Signal MOSFET http://onsemi.com –30V, –0.1A, 10.4Ω, Single SSFP Features • • • Low ON-resistance High-speed switching 2.5V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit --30 V ±10 V Allowable Power Dissipation ID IDP PD 0.15 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% --0.1 A --0.4 A This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7029A-003 • Package : SSFP • JEITA, JEDEC : SC-81 • Minimum Packing Quantity : 8,000 pcs./reel 3LP01SS-TL-E 3LP01SS-TL-H 1.4 0.1 3 Packing Type: TL Marking 0.8 0 to 0.02 2 0.45 TL 0.2 Electrical Connection 0.6 0.07 0.07 XA LOT No. 1 LOT No. 0.3 1.4 0.3 0.25 1 2 3 3 1 : Gate 2 : Source 3 : Drain SSFP 1 2 Semiconductor Components Industries, LLC, 2013 July, 2013 62712 TKIM/32406PE MSIM TB-00002156/92500 TSIM TA-1981 No.6648-1/7 3LP01SS Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions V(BR)DSS IDSS ID= --1mA, VGS=0V VDS= --30V, VGS=0V VGS=±8V, VDS=0V Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID= --50mA, VGS= --4V ID= --30mA, VGS= --2.5V ID= --1mA, VGS= --1.5V Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD Ratings min typ max --30 VDS= --10V, ID= --100μA VDS= --10V, ID= --50mA V --0.4 80 VDS= --10V, f=1MHz See specified Test Circuit. VDS= --10V, VGS= --10V, ID= --100mA --1 μA ±10 μA --1.4 110 V mS 8 10.4 Ω 11 15.4 Ω 27 54 Ω 7.5 pF 5.7 pF 1.8 pF 24 ns 55 ns 120 ns 130 ns 1.43 nC 0.18 nC 0.25 IS= --100mA, VGS=0V Unit --0.83 nC --1.2 V Switching Time Test Circuit 0V --4V VDD= --15V VIN VIN PW=10μs D.C.≤1% D ID= --50mA RL=300Ω VOUT G 3LP01SS P.G 50Ω S Ordering Information Package Shipping memo 3LP01SS-TL-E Device SSFP 8,000pcs./reel Pb Free 3LP01SS-TL-H SSFP 8,000pcs./reel Pb Free and Halogen Free No.6648-2/7 3LP01SS ID -- VDS --0.18 V .5 --0.16 --6.0 --0.07 --0.06 --0.05 --0.04 --0.03 VGS= --1.5V --0.02 --0.10 --0.08 --0.06 0 --0.2 0 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Drain-to-Source Voltage, VDS -- V --1.8 --2.0 0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 20 15 --50mA ID= --30mA 5 --2 --3 --4 --5 --6 --7 --8 Gate-to-Source Voltage, VGS -- V --9 --10 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 25°C Ta=75°C 10 7 --25°C 5 3 2 1.0 --0.01 2 3 5 7 2 --0.1 Drain Current, ID -- A , mA 12 -I D= 10 V 30 A, m --50 I D= 8 4.0 = -V GS 6 4 2 --60 --40 --20 0 20 40 60 80 --25°C 5 3 2 2 3 100 Ambient Temperature, Ta -- °C 120 140 5 7 160 IT00083 2 --0.1 3 IT00080 RDS(on) -- ID VGS= --1.5V 5 3 2 100 7 5 25°C Ta=75°C 3 2 --25°C 2 3 5 7 2 --1.0 Drain Current, ID -- mA Forward Transfer Admittance, | yfs | -- S V 2.5 = -V GS 7 3 IT00082 | yfs | -- ID 1.0 16 14 25°C Ta=75°C 10 IT00081 RDS(on) -- Ta 18 2 10 --0.1 3 --4.0 IT00078 3 7 3 --3.5 Drain Current, ID -- A VGS= --2.5V 5 2 --3.0 VGS= --4V 1000 7 --2.5 RDS(on) -- ID IT00079 RDS(on) -- ID 100 --2.0 5 1.0 --0.01 0 --1 --1.5 7 25 0 --1.0 100 Ta=25°C 10 --0.5 Gate-to-Source Voltage, VGS -- V IT00077 RDS(on) -- VGS 30 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω --0.12 --0.02 0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω --0.14 --0.04 --0.01 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 25°C --25 °C V --2.0V Ta= --2 75° C --3 .0V --4 . --0.08 Drain Current, ID -- A VDS= --10V 0V --3.5V --0.09 ID -- VGS --0.20 Drain Current, ID -- A --0.10 VDS= --10V 7 5 3 25°C 2 0.1 5°C 2 Ta= -- 75°C 7 5 3 2 0.01 --0.01 2 3 5 7 --0.1 Drain Current, ID -- A 2 3 IT00084 No.6648-3/7 3LP01SS IS -- VSD 3 Switching Time, SW Time -- ns 5 --0.01 --0.5 --0.6 --0.7 --25°C 2 25°C 3 Ta=7 5°C --0.8 --0.9 --1.0 Diode Forward Voltage, VSD -- V td(off) 100 7 5 tr 3 td(on) 2 3 2 10 Ciss Coss 5 3 2 Crss 3 5 7 Drain Current, ID -- A --0.1 IT00086 VGS -- Qg VDS= --10V ID= --0.1A --9 7 2 --10 5 Ciss, Coss, Crss -- pF tf 2 f=1MHz 7 --8 --7 --6 --5 --4 --3 --2 --1 1.0 0 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT00087 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 IT00088 PD -- Ta 0.20 Allowable Power Dissipation, PD -- W 3 IT00085 Ciss, Coss, Crss -- VDS 100 5 10 --0.01 --1.1 Gate-to-Sourse Voltage, VGS -- V Source Current, IS -- A 7 VDD= --15V VGS= --4V 7 2 --0.1 SW Time -- ID 1000 VGS=0V 0.15 0.10 0.05 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT02381 No.6648-4/7 3LP01SS Embossed Taping Specification 3LP01SS-TL-E, 3LP01SS-TL-H No.6648-5/7 3LP01SS Outline Drawing 3LP01SS-TL-E, 3LP01SS-TL-H Land Pattern Example Mass (g) Unit 0.0018 mm * For reference Unit: mm 1.2 0.5 0.5 0.45 0.45 0.45 0.45 No.6648-6/7 3LP01SS Note on usage : Since the 3LP01SS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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