AMIS30600LINI1RG

AMIS-30600 LIN Transceiver General Description http://onsemi.com PIN ASSIGNMENT RxD 1 8 EN 2 7 VBB 6 LIN 5 GND VCC TxD 3 AMIS− 30600 The single−wire transceiver AMIS−30600 is a monolithic integrated circuit in a SOIC−8 package. It works as an interface between the protocol controller and the physical bus. The AMIS−30600 is especially suitable to drive the bus line in LIN systems in automotive and industrial applications. Further it can be used in standard ISO9141 systems. In order to reduce the current consumption the AMIS−30600 offers a stand−by mode. A wake−up caused by a message on the bus pulls the INH−output high until the device is switched to normal operation mode. The transceiver is implemented in I2T100 technology enabling both high−voltage analog circuitry and digital functionality to co−exist on the same chip. The AMIS−30600 provides an ultra−safe solution to today’s automotive in−vehicle networking (IVN) requirements by providing unlimited short circuit protection in the event of a fault condition. 4 INH Features • LIN−Bus Transceiver ♦ • • • • • • LIN compliant to specification rev. 1.3 and rev. 2.0 ♦ I2T high−voltage technology ♦ Bus voltage $ 40 V ♦ Transmission rate up to 20kbaud ♦ SOIC−150−8 package Protection ♦ Thermal shutdown ♦ Indefinite short circuit protection to supply and ground Load dump protection (45 V) Power Saving ♦ Operating voltage = 4.75 to 5.25 V ♦ Power down supply current < 50 mA EMS Compatibility ♦ Integrated filter and hysteresis for receiver EMI Compatibility ♦ Integrated slope control for transmitter ♦ Slope control dependant from Vbat to enable maximum capacitive load These are Pb−Free Devices (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 December, 2014 − Rev. 9 1 Publication Order Number: AMIS−30600/D AMIS−30600 V CC V BB 3 7 Thermal shutdown 8 State & Wake−up Control INH 30 k W 2 EN 10 k W COMP 1 RxD 6 Filter VCC 40 k W 4 LIN AMIS−30600 Slope Control TxD 5 PC20050113.3 GND Figure 1. Block Diagram Master Node IN VBAT IN 5V−reg 100 nF V BB INH 1 kW 7 LIN AMIS− 7 4 TxD 2 5 3 1 LIN LIN controller 6 AMIS− 4 RxD TxD 30600 EN 2 GND GND LIN controller 2 GND V CC V CC 8 RxD 30600 1 nF V BB INH 3 1 6 100 nF 10 mF V CC V CC 8 OUT 5V−reg 10 mF GND Slave Node VBAT OUT 5 EN 2 GND GND KL30 LIN−BUS PC20050113.5 KL31 Figure 2. Application Diagram http://onsemi.com 2 AMIS−30600 Table 1. PIN LIST AND DESCRIPTIONS Pin Name Description 1 RxD Receive data output; low in dominant state 2 EN Enable input; transceiver in normal operation mode when high 3 VCC 5V supply input 4 TxD Transmit data input; low in dominant state; internal 40 kW pullup 5 GND Ground 6 LIN LIN bus output/input; low in dominant state; internal 30 kW pullup 7 VBB Battery supply input 8 INH Inhibit output; to control a voltage regulator; becomes high when wake−up via LIN bus occurs Table 2. ABSOLUTE MAXIMUM RATINGS Min Max Unit VCC Symbol Supply Voltage Parameter Conditions −0.3 +7 V VBB Battery Supply Voltage −0.3 +40 V VLIN DC Voltage at Pin LIN 0 < VCC < 5.50 V −40 +40 V VINH DC Voltage at Pin INH 0 < VCC < 5.50 V −0.3 VBB + 0.3 V VTxD DC Voltage at Pin TxD 0 < VCC < 5.50 V −0.3 VCC + 0.3 V VRxD DC Voltage at Pin RxD 0 < VCC < 5.50 V −0.3 VCC + 0.3 V VEN DC Voltage at Pin EN 0 < VCC < 5.50 V −0.3 VCC + 0.3 V Vesd(LIN) Electrostatic Discharge Voltage at LIN Pin (Note 1) −4 +4 kV Vesd Electrostatic Discharge Voltage at All Other Pins (Note 1) −4 +4 kV Vtran(LIN) Transient Voltage at Pin LIN (Note 2) −150 +150 V Vtran(VBB) Transient Voltage at Pin VBB (Note 3) −150 +150 V Tamb Ambient Temperature −40 +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Standardized Human Body Model system ESD pulses in accordance to IEC 1000.4.2. 2. Applied transient waveforms in accordance with “ISO 7637 parts 1 & 3”, capacitive coupled test pulses 1 (−100 V), 2 (+100 V), 3a (−150 V), and 3b (+150 V). See Figure 8. 3. Applied transient waveforms in accordance with “ISO 7637 parts 1 & 3”, direct coupled test pulses 1 (−100 V), 2 (+75 V), 3a (−150 V), 3b (+150 V), and 5 (+80 V). See Figure 8. Table 3. OPERATING RANGE Symbol Parameter Min Typ Max Unit VCC Supply Voltage 4.75 +5.25 V VBB Battery Supply Voltage 7.3 +18 V TJ Maximum Junction Temperature −40 +150 °C Tjsd Thermal Shutdown Temperature +150 Rthj−a Thermal Resistance Junction−to−Ambient +170 185 http://onsemi.com 3 +190 °C °C/W AMIS−30600 APPLICATION INFORMATION POWER UP INH = H Rx = LIN data POWER UP V BB = on and V CC = on V BB = on INH = H Rx = LIN data EN = H EN = H NORMAL MODE STANDBY MODE EN= L INH = H Rx = H NORMAL MODE STANDBY MODE EN= L INH = H Rx = H → VCC = on EN = H Wake−up over bus t > t wake EN = L Wake−up over bus t > t wake EN = L SLEEP MODE SLEEP MODE INH = Float Rx = H V CC = on permanently INH = Float → V CC = off Rx = Float V CC controlled by INH: INH = Float → V CC = off INH = H → V CC = on Figure 3. State Diagrams The AMIS−30600 has a slope which depends of the supply Vbat. This implementation guarantees biggest slope−time under all load conditions. The rising slope has to be slower then the external RC−time−constant, otherwise the slope will be terminated by the RC−time−constant and no longer by the internal slope−control. This would affect the symmetry of the bus−signal and would limit the maximum allowed bus−speed. A capacitor of 10 mF at the supply voltage input VB buffers the input voltage. In combination with the required reverse polarity diode this prevents the device from detecting power down conditions in case of negative transients on the supply line. In order to reduce the current consumption, the AMIS−30600 offers a sleep operation mode. This mode is selected by switching the enable input EN low (see Figure 4). An external voltage regulator can be controlled via the INH output in order to minimize the current consumption of the whole application in sleep mode (see Figure 2). A wake−up caused by a message on the communication bus automatically enables the voltage regulator by switching the INH output high (see Figure 3). In case the voltage regulator control input is not connected to the INH output, or the microcontroller is active respectively, the AMIS−30600 can be set in normal operation mode by EN = H (see Figure 3). http://onsemi.com 4 AMIS−30600 Table 4. DC CHARACTERISTICS VCC = 4.75 V to 5.25 V; VBB = 7.3 V to 18 V,VEN < VENon, TA = −40°C to +125°C; RL = 500 W unless specified otherwise. All voltages with respect to ground, positive current flowing into pin, unless otherwise specified. Parameter Symbol Conditions Min Typ Max Unit SUPPLY (Pin VCC and Pin VBB) ICC 5 V Supply Current Dominant; VTxD = 0 V Recessive; VTxD = VCC 400 250 700 500 μA IBB Battery Supply Current Dominant; VTxD = 0 V Recessive; VTxD = VCC 1 100 1.5 200 mA μA IBB Battery Supply Current Sleep Mode; VEN = 0 V 35 55 μA ICC 5 V Supply Current Sleep Mode; VEN = 0 V 0.25 1 μA TRANSMITTER DATA INPUT (Pin TxD) VIH High−Level Input Voltage Output Recessive 0.7 x VCC − VCC V VIL Low−Level Input Voltage Output Dominant 0 − 0.3 x VCC V RTxD,pu Pullup Resistor to VCC 24 60 k 0.8 x VCC VCC V 0.2 x VCC V RECEIVER DATA OUTPUT (Pin RxD) VOH High−Level Output Voltage IRXD = −10 mA VOL Low−Level Output Voltage IRXD = 5 mA 0 0.7 x VCC − VCC V 0 − 0.3 x VCC V 6 10 15 k 0.5 1.0 V −5.0 − 5.0 μA 0.9 x VBB − VBB V ENABLE INPUT (Pin EN) VEN,on High−Level Input Voltage Normal Mode VEN,off Low−Level Input Voltage Low Power Mode REN,pd Pulldown Resistor−to−GND INHIBIT OUTPUT (Pin INH) VINH,d High−Level Voltage Drop: VINH,d = VBB − VINH IINH = − 0.15 mA IINH,lk Leakage Current Sleep Mode; VINH = 0 V BUS LINE (Pin LIN) Vbus,rec Recessive Bus Voltage at Pin LIN VTxD = VCC Vbus,dom Dominant Output Voltage at Pin LIN VTxD = 0 V ; VBB = 7.3 V VTxD = 0 V; VBB = 18 V; RL = 500 W 0 − 1.2 2.0 V Ibus,sc Bus Short−Circuit Current Vbus,short = 18 V 40 85 130 mA Ibus,lk Bus Leakage Current VCC = VBB = 0V; Vbus = −8 V VCC = VBB = 0V; Vbus = 20 V −400 −200 5 20 20 30 47 kW VTxD = 0 V μA Rbus Bus Pullup Resistance; Note 4 Vbus,rd Receiver Threshold: Recessive−to−Dominant 0.4 x VBB 0.48 x VBB 0.6 x VBB V Vbus,dr Receiver Threshold: Dominant−to−Recessive 0.4 x VBB 0.52 x VBB 0.6 x VBB V Vq Receiver Hysteresis 0.05 x VBB 0.08 x VBB 0.175 x VBB V VWAKE Wake−up Threshold Voltage 0.6 x VBB V Vbus,hys = Vbus,rec − Vbus,dom 0.4 x VBB 4. Guaranteed by design. The total resistance of the pullup resistor and the serial diode is measured on ATE. http://onsemi.com 5 AMIS−30600 Table 5. AC ELECTRICAL CHARACTERISTICS ACCORDING TO LIN V13 VCC = 4.75 V to 5.25 V; VBB = 7.3 V to 18 V,VEN < VENon, TA = −40°C to +125°C; RL = 500 W unless otherwise specified. Load for slope definitions (typical loads) = [L1] 1 nF 1 kW / [L2] 6.8 nF 600 W / [L3] 10 nF 500 W. Parameter Symbol Conditions Min Typ Max Unit t_slope_F Slope Time Falling Edge; (Note 5) See Figure 5 4 − 24 ms t_slope_R Slope Time Rising Edge; (Note 5) See Figure 5 4 − 24 ms t_slope_Sym Slope Time Symmetry; (Note 5) −8 − +8 ms T_rec_F Propagation Delay Bus Dominant to RxD = Low; (Note 6) See Figures 4 and 5 2 6 ms T_rec_R Propagation Delay Bus Recessive to RxD = High; (Note 6) See Figures 4 and 5 6 6 ms tWAKE Wake−up Delay Time 100 200 ms t_slope_F − t_slope_R 30 5. Guaranteed by design; not measured for all supply/load combinations on ATE. 6. Not measured on ATE. Table 6. AC ELECTRICAL CHARACTERISTICS ACCORDING TO LIN v2.0 VCC = 4.75 V to 5.25 V; VBB = 7.3 V to 18 V,VEN < VENon, TA = −40°C to +125°C; RL = 500 W unless otherwise specified. Load for slope definitions (typical loads) = [L1] 1 nF 1 kW / [L2] 6.8 nF 600 W / [L3] 10 nF 500 W. Symbol Parameter Conditions Min Typ Max Unit DYNAMIC RECEIVER CHARACTERISTICS ACCORDING TO LIN v2.0 trx_pdr Propagation Delay Bus Dominant to RxD = Low; (Note 7) See Figure 6 6 ms trx_pdf Propagation Delay Bus Recessive to RxD = High; (Note 7) See Figure 6 6 ms trx_sym Symmetry of Receiver Propagation Delay +2 ms trx_pdr − trx_pdf −2 − DYNAMIC TRANSMITTER CHARACTERISTICS ACCORDING TO LIN v2.0 D1 Duty Cycle 1 = tBus_rec(min)/(2 x tBit); See Figure D1 Duty Cycle 1 = tBus_rec(min)/(2 x tBit); See Figure 6 D2 Duty Cycle 2 = tBus_rec(max)/(2 x tBit); See Figure 6 0.396 0.5 THRec(max) = 0.744 x Vbat; THDom(max) = 0.581 x Vbat;Vbat = 7.0 V to 18 V; tBit = 50 ms THRec(max) = 0.744 x Vbat; THDom(max) = 0.581 x Vbat;Vbat = 7.0V; tBit = 50 ms; tamb = −40°C 0.366 0.5 THRec(min) = 0.284 x Vbat; THDom(min) = 0.422 x Vbat;Vbat = 7.6 V to 18 V; tBit = 50 ms; 0.5 0.581 7. Not measured on ATE. http://onsemi.com 6 AMIS−30600 Vbat V BB 100 nF 7 +5 V RL 3 100 nF AMIS − 2 EN CL 5 1 RxD RL CL L1 1 kW 1 nF L2 600 W 6.8 nF L3 500 W 10 nF Load 3 INH 4 TxD LIN 6 30600 GND 20 pF PD20080123 .1 Figure 4. Test Circuit for Timing Characteristics LIN 50% t RxD T_rec_F T_rec_R 50% 50% t PC20041206 .1 LIN 60% 60% 40% 40% t T_slope_F T_slope_R PC 20041206.2 Figure 5. Timing Diagram for AC Characteristics According to LIN 1.3 http://onsemi.com 7 AMIS−30600 TxD tBIT tBIT 50% t tBUS_DOM(max) LIN tBUS_REC(min) THREC(max) THDOM(max) Thresholds receiver 1 THREC(max) THDOM(max) Thresholds receiver 2 t tBUS_DOM(min) RxD ( receiver 2) tBUS_REC(max) 50% trx_pdf trx_pdr t PD20080319.1 Figure 6. Timing Diagram for AC Characteristics According to LIN 2.0 +13.5 V V BB 100 nF 7 V CC +5.25 V 3 Transient 1 kW Generator 100 nF AMIS− TxD 6 LIN 30600 4 1 nF 1 nF EN 3 2 1 INH 5 GND RxD 20 pF PC20050113.2 Figure 7. Test Circuit for Transient Measurements http://onsemi.com 8 AMIS−30600 DEVICE ORDERING INFORMATION Temperature Range Package Type Shipping† AMIS30600LINI1G −40°C − 125°C SOIC−8 (Pb−Free) 96 Tube / Tray AMIS30600LINI1RG −40°C − 125°C SOIC−8 (Pb−Free) 3000 / Tape & Reel Part Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−8 CASE 751AZ ISSUE B 8 1 SCALE 1:1 NOTES 4&5 0.10 C D 45 5 CHAMFER D h NOTE 6 D A 8 DATE 18 MAY 2015 H 2X 5 0.10 C D E E1 NOTES 4&5 L2 1 0.20 C D 4 8X B NOTE 6 TOP VIEW b 0.25 M L C DETAIL A C A-B D NOTES 3&7 NOTE 7 c 0.10 C e A1 C SIDE VIEW NOTE 8 DIM A A1 A2 b c D E E1 e h L L2 DETAIL A A2 A SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.004 mm IN EXCESS OF MAXIMUM MATERIAL CONDITION. 4. DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.006 mm PER SIDE. DIMENSION E1 DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.010 mm PER SIDE. 5. THE PACKAGE TOP MAY BE SMALLER THAN THE PACKAGE BOT­ TOM. DIMENSIONS D AND E1 ARE DETERMINED AT THE OUTER­ MOST EXTREMES OF THE PLASTIC BODY AT DATUM H. 6. DIMENSIONS A AND B ARE TO BE DETERMINED AT DATUM H. 7. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10 TO 0.25 FROM THE LEAD TIP. 8. A1 IS DEFINED AS THE VERTICAL DISTANCE FROM THE SEATING PLANE TO THE LOWEST POINT ON THE PACKAGE BODY. SEATING PLANE END VIEW RECOMMENDED SOLDERING FOOTPRINT* MILLIMETERS MIN MAX --1.75 0.10 0.25 1.25 --0.31 0.51 0.10 0.25 4.90 BSC 6.00 BSC 3.90 BSC 1.27 BSC 0.25 0.41 0.40 1.27 0.25 BSC GENERIC MARKING DIAGRAM* 8X 0.76 8 8X 1.52 1 7.00 XXXXX A L Y W G 1 1.27 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON34918E SOIC−8 XXXXX ALYWX G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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