AMIS-30600

AMIS-30600 LIN Transceiver General Description The single−wire transceiver AMIS−30600 is a monolithic integrated circuit in a SOIC−8 package. It works as an interface between the protocol controller and the physical bus. The AMIS−30600 is especially suitable to drive the bus line in LIN systems in automotive and industrial applications. Further it can be used in standard ISO9141 systems. In order to reduce the current consumption the AMIS−30600 offers a stand−by mode. A wake−up caused by a message on the bus pulls the INH−output high until the device is switched to normal operation mode. The transceiver is implemented in I2T100 technology enabling both high−voltage analog circuitry and digital functionality to co−exist on the same chip. The AMIS−30600 provides an ultra−safe solution to today’s automotive in−vehicle networking (IVN) requirements by providing unlimited short circuit protection in the event of a fault condition. Features ♦ ♦ http://onsemi.com PIN ASSIGNMENT RxD EN VCC TxD 1 2 3 4 8 7 6 5 INH VBB LIN GND AMIS− 30600 • LIN−Bus Transceiver PC20041204.3 (Top View) • • • • • • LIN compliant to specification rev. 1.3 and rev. 2.0 I2T high−voltage technology ♦ Bus voltage $ 40 V ♦ Transmission rate up to 20kbaud ♦ SOIC−150−8 package Protection ♦ Thermal shutdown ♦ Indefinite short circuit protection to supply and ground Load dump protection (45 V) Power Saving ♦ Operating voltage = 4.75 to 5.25 V ♦ Power down supply current < 50 mA EMS Compatibility ♦ Integrated filter and hysteresis for receiver EMI Compatibility ♦ Integrated slope control for transmitter ♦ Slope control dependant from Vbat to enable maximum capacitive load These are Pb−Free Devices ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 February, 2010 − Rev. 7 1 Publication Order Number: AMIS−30600/D AMIS−30600 V CC 3 Thermal shutdown V BB 7 8 INH 2 10 k W EN State & Wake−up Control 30 k W RxD 1 VCC 40 k W COMP Filter AMIS−30600 Slope Control 5 6 LIN TxD 4 PC20050113.3 GND Figure 1. Block Diagram Master Node VBAT 10 m F V BB INH 1 kW 7 8 3 1 6 1 nF AMIS− 30600 4 2 5 GND RxD TxD EN LIN controller V CC IN 5V−reg OUT 100 nF V CC VBAT 10 m F Slave Node IN 5V−reg OUT 100 nF V BB INH 7 8 3 1 RxD TxD EN LIN controller V CC V CC LIN LIN 6 AMIS− 30600 4 2 GND 2 GND GND 5 GND 2 GND KL30 LIN−BUS KL31 PC20050113.5 Figure 2. Application Diagram http://onsemi.com 2 AMIS−30600 Table 1. PIN LIST AND DESCRIPTIONS Pin 1 2 3 4 5 6 7 8 Name RxD EN VCC TxD GND LIN VBB INH Receive data output; low in dominant state Enable input; transceiver in normal operation mode when high 5V supply input Transmit data input; low in dominant state; internal 40 kW pullup Ground LIN bus output/input; low in dominant state; internal 30 kW pullup Battery supply input Inhibit output; to control a voltage regulator; becomes high when wake−up via LIN bus occurs Description Table 2. ABSOLUTE MAXIMUM RATINGS Symbol VCC VBB VLIN VINH VTxD VRxD VEN Vesd(LIN) Vesd Vtran(LIN) Vtran(VBB) Tamb Supply Voltage Battery Supply Voltage DC Voltage at Pin LIN DC Voltage at Pin INH DC Voltage at Pin TxD DC Voltage at Pin RxD DC Voltage at Pin EN Electrostatic Discharge Voltage at LIN Pin Electrostatic Discharge Voltage at All Other Pins Transient Voltage at Pin LIN Transient Voltage at Pin VBB Ambient Temperature 0 < VCC < 5.50 V 0 < VCC < 5.50 V 0 < VCC < 5.50 V 0 < VCC < 5.50 V 0 < VCC < 5.50 V (Note 1) (Note 1) (Note 2) (Note 3) Parameter Conditions Min −0.3 −0.3 −40 −0.3 −0.3 −0.3 −0.3 −4 −4 −150 −150 −40 Max +7 +40 +40 VBB + 0.3 VCC + 0.3 VCC + 0.3 VCC + 0.3 +4 +4 +150 +150 +150 Unit V V V V V V V kV kV V V °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Standardized Human Body Model system ESD pulses in accordance to IEC 1000.4.2. 2. Applied transient waveforms in accordance with “ISO 7637 parts 1 & 3”, capacitive coupled test pulses 1 (−100 V), 2 (+100 V), 3a (−150 V), and 3b (+150 V). See Figure 8. 3. Applied transient waveforms in accordance with “ISO 7637 parts 1 & 3”, direct coupled test pulses 1 (−100 V), 2 (+75 V), 3a (−150 V), 3b (+150 V), and 5 (+80 V). See Figure 8. Table 3. OPERATING RANGE Symbol VCC VBB TJ Tjsd Rthj−a Supply Voltage Battery Supply Voltage Maximum Junction Temperature Thermal Shutdown Temperature Thermal Resistance Junction−to−Ambient Parameter Min 4.75 7.3 −40 +150 +170 185 Typ Max +5.25 +18 +150 +190 Unit V V °C °C °C/W http://onsemi.com 3 AMIS−30600 APPLICATION INFORMATION POWER UP VBB on = and VCC = on EN = H STANDBY MODE EN = H EN= L INH = H Rx = H NORMAL MODE POWER UP VBB on = INH = H Rx = LIN data EN = H STANDBY MODE EN= L INH = H B VCC = on Rx = H INH = H Rx = LIN data NORMAL MODE EN = L Wake−up over bus t > t wake SLEEP MODE INH = Float Rx = H V CC= on permanently EN = L SLEEP MODE Wake−up over bus t > t wake INH = FloatVCC off B = Rx = Float V CCcontrolled by INH: INH = Float B V CC= off INH = H B V CC= on PC20061221.1 Figure 3. State Diagrams The AMIS−30600 has a slope which depends of the supply Vbat. This implementation guarantees biggest slope−time under all load conditions. The rising slope has to be slower then the external RC−time−constant, otherwise the slope will be terminated by the RC−time−constant and no longer by the internal slope−control. This would affect the symmetry of the bus−signal and would limit the maximum allowed bus−speed. A capacitor of 10 mF at the supply voltage input VB buffers the input voltage. In combination with the required reverse polarity diode this prevents the device from detecting power down conditions in case of negative transients on the supply line. In order to reduce the current consumption, the AMIS−30600 offers a sleep operation mode. This mode is selected by switching the enable input EN low (see Figure 4). An external voltage regulator can be controlled via the INH output in order to minimize the current consumption of the whole application in sleep mode (see Figure 2). A wake−up caused by a message on the communication bus automatically enables the voltage regulator by switching the INH output high (see Figure 3). In case the voltage regulator control input is not connected to the INH output, or the microcontroller is active respectively, the AMIS−30600 can be set in normal operation mode by EN = H (see Figure 3). http://onsemi.com 4 AMIS−30600 Table 4. DC CHARACTERISTICS VCC = 4.75 V to 5.25 V; VBB = 7.3 V to 18 V,VEN < VENon, TA = −40°C to +125°C; RL = 500 W unless specified otherwise. All voltages with respect to ground, positive current flowing into pin, unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit SUPPLY (Pin VCC and Pin VBB) ICC IBB IBB ICC VIH VIL RTxD,pu VOH VOL VEN,on VEN,off REN,pd VINH,d IINH,lk Vbus,rec Vbus,dom 5 V Supply Current Battery Supply Current Battery Supply Current 5 V Supply Current Dominant; VTxD = 0 V Recessive; VTxD = VCC Dominant; VTxD = 0 V Recessive; VTxD = VCC Sleep Mode; VEN = 0 V Sleep Mode; VEN = 0 V Output Recessive Output Dominant 0.7 x VCC 0 24 400 250 1 100 35 0.25 700 500 1.5 200 55 1 μA mA μA μA μA TRANSMITTER DATA INPUT (Pin TxD) High−Level Input Voltage Low−Level Input Voltage Pullup Resistor to VCC High−Level Output Voltage Low−Level Output Voltage IRXD = −10 mA IRXD = 5 mA Normal Mode Low Power Mode − − VCC 0.3 x VCC 60 V V k RECEIVER DATA OUTPUT (Pin RxD) 0.8 x VCC 0 VCC 0.2 x VCC − − 10 VCC 0.3 x VCC 15 V V ENABLE INPUT (Pin EN) High−Level Input Voltage Low−Level Input Voltage Pulldown Resistor−to−GND 0.7 x VCC 0 6 V V k INHIBIT OUTPUT (Pin INH) High−Level Voltage Drop: VINH,d = VBB − VINH Leakage Current IINH = − 0.15 mA Sleep Mode; VINH = 0 V VTxD = VCC VTxD = 0 V ; VBB = 7.3 V VTxD = 0 V; VBB = 18 V; RL = 500 W Vbus,short = 18 V VCC = VBB = 0V; Vbus = −8 V VCC = VBB = 0V; Vbus = 20 V VTxD = 0 V −5.0 0.5 − 1.0 5.0 V μA BUS LINE (Pin LIN) Recessive Bus Voltage at Pin LIN Dominant Output Voltage at Pin LIN Bus Short−Circuit Current Bus Leakage Current Bus Pullup Resistance; Note 4 Receiver Threshold: Recessive−to−Dominant Receiver Threshold: Dominant−to−Recessive Receiver Hysteresis Wake−up Threshold Voltage Vbus,hys = Vbus,rec − Vbus,dom 0.9 x VBB 0 − − VBB 1.2 2.0 130 20 47 0.6 x VBB 0.6 x VBB 0.175 x VBB 0.6 x VBB kW V V V V V V Ibus,sc Ibus,lk Rbus Vbus,rd Vbus,dr Vq VWAKE 40 −400 20 0.4 x VBB 0.4 x VBB 0.05 x VBB 0.4 x VBB 85 −200 5 30 0.48 x VBB 0.52 x VBB 0.08 x VBB mA μA 4. Guaranteed by design. The total resistance of the pullup resistor and the serial diode is measured on ATE. http://onsemi.com 5 AMIS−30600 Table 5. AC ELECTRICAL CHARACTERISTICS ACCORDING TO LIN V13 VCC = 4.75 V to 5.25 V; VBB = 7.3 V to 18 V,VEN < VENon, TA = −40°C to +125°C; RL = 500 W unless otherwise specified. Load for slope definitions (typical loads) = [L1] 1 nF 1 kW / [L2] 6.8 nF 600 W / [L3] 10 nF 500 W. Symbol t_slope_F t_slope_R t_slope_Sym T_rec_F T_rec_R tWAKE Parameter Slope Time Falling Edge; (Note 5) Slope Time Rising Edge; (Note 5) Slope Time Symmetry; (Note 5) Propagation Delay Bus Dominant to RxD = Low; (Note 6) Propagation Delay Bus Recessive to RxD = High; (Note 6) Wake−up Delay Time Conditions See Figure 5 See Figure 5 t_slope_F − t_slope_R See Figures 4 and 5 See Figures 4 and 5 30 Min 4 4 −8 Typ − − − 2 6 100 Max 24 24 +8 6 6 200 Unit ms ms ms ms ms ms 5. Guaranteed by design; not measured for all supply/load combinations on ATE. 6. Not measured on ATE. Table 6. AC ELECTRICAL CHARACTERISTICS ACCORDING TO LIN v2.0 VCC = 4.75 V to 5.25 V; VBB = 7.3 V to 18 V,VEN < VENon, TA = −40°C to +125°C; RL = 500 W unless otherwise specified. Load for slope definitions (typical loads) = [L1] 1 nF 1 kW / [L2] 6.8 nF 600 W / [L3] 10 nF 500 W. Symbol Parameter Conditions Min Typ Max Unit DYNAMIC RECEIVER CHARACTERISTICS ACCORDING TO LIN v2.0 trx_pdr trx_pdf trx_sym Propagation Delay Bus Dominant to RxD = Low; (Note 7) Propagation Delay Bus Recessive to RxD = High; (Note 7) Symmetry of Receiver Propagation Delay See Figure 6 See Figure 6 trx_pdr − trx_pdf −2 − 6 6 +2 ms ms ms DYNAMIC TRANSMITTER CHARACTERISTICS ACCORDING TO LIN v2.0 D1 D1 Duty Cycle 1 = tBus_rec(min)/(2 x tBit); See Figure Duty Cycle 1 = tBus_rec(min)/(2 x tBit); See Figure 6 THRec(max) = 0.744 x Vbat; THDom(max) = 0.581 x Vbat;Vbat = 7.0 V to 18 V; tBit = 50 ms THRec(max) = 0.744 x Vbat; THDom(max) = 0.581 x Vbat;Vbat = 7.0V; tBit = 50 ms; tamb = −40°C THRec(min) = 0.284 x Vbat; THDom(min) = 0.422 x Vbat;Vbat = 7.6 V to 18 V; tBit = 50 ms; 0.396 0.366 0.5 0.5 D2 Duty Cycle 2 = tBus_rec(max)/(2 x tBit); See Figure 6 0.5 0.581 7. Not measured on ATE. http://onsemi.com 6 AMIS−30600 Vbat 100 nF 7 +5 V 100 nF 2 AMIS − 30600 6 LIN CL Load L1 L2 L3 RL 1 kW 600 W 500 W CL 1 nF 6.8 nF 10 nF PD 20080123 .1 3 RL V BB EN TxD 4 1 RxD 5 3 INH GND 20 pF Figure 4. Test Circuit for Timing Characteristics LIN 50% t RxD T_rec_F 50% T_rec_R 50% t LIN PC 20041206 .1 60% 40% 60% 40% T_slope_F T_slope_R t PC 20041206.2 Figure 5. Timing Diagram for AC Characteristics According to LIN 1.3 http://onsemi.com 7 AMIS−30600 TxD tBIT 50% t tBIT LIN tBUS_DOM(max) tBUS_REC(min) THREC(max) THDOM(max) THREC(max) THDOM(max) Thresholds receiver 1 Thresholds receiver 2 t RxD ( receiver 2) tBUS_DOM(min) tBUS_REC(max) 50% trx _pdf trx _pdr t PD20080319.1 Figure 6. Timing Diagram for AC Characteristics According to LIN 2.0 +13.5 V 100 nF V CC 100 nF TxD EN AMIS− 4 2 1 RxD 20 pF 5 GND PC20050113.2 30600 3 INH 6 LIN 1 nF 1 nF 7 3 1 kW Transient Generator V BB +5.25 V Figure 7. Test Circuit for Transient Measurements http://onsemi.com 8 AMIS−30600 DEVICE ORDERING INFORMATION Part Number AMIS30600LINI1G AMIS30600LINI1RG Temperature Range −40°C − 125°C −40°C − 125°C Package Type SOIC−8 (Pb−Free) SOIC−8 (Pb−Free) Shipping† 96 Tube / Tray 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 9 AMIS−30600 PACKAGE DIMENSIONS SOIC 14 CASE 751AP−01 ISSUE A DATE 29 AUG 2008 http://onsemi.com 10 AMIS−30600 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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