BAS16WT1G Silicon Switching Diode
Features
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
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MAXIMUM RATINGS (TA = 25C)
Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 ms Total Power Dissipation, One Diode Loaded TA = 25C Derate above 25C Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) Operating and Storage Junction Temperature Range Symbol VR IR IFM(surge) Value 75 200 500 Unit V mA mA
3 CATHODE
1 ANODE
MARKING DIAGRAM
A6 MG G 1
PD
200 1.6
mW mW/C C
SC-70 CASE 419 STYLE 2
TJ, Tstg
-- 55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
A6 = Specific Device Code M = Date Code G = Pb--Free Package (Note: Microdot may be in either location)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction--to--Ambient One Diode Loaded Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) Symbol RθJA Max 625 Unit C/W
ORDERING INFORMATION
Device BAS16WT1G Package SC--70 (Pb--Free) Shipping† 3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2010
October, 2010- Rev. 8 -
1
Publication Order Number: BAS16WT1/D
BAS16WT1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) Reverse Current (VR = 75 V) (VR = 75 V, TJ = 150C) (VR = 25 V, TJ = 150C) Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 10 mA, RL = 50 Ω) (Figure 1) Stored Charge (IF = 10 mA to VR = 6.0 V, RL = 500 Ω) (Figure 2) Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) (Figure 3) Symbol VF Min -----------Max 715 866 1000 1250 mA 1.0 50 30 2.0 6.0 45 1.75 pF ns PC V Unit mV
IR
CD trr QS VFR
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BAS16WT1G
1 ns MAX t 10% tif trr 50 Ω DUTY CYCLE = 2% VF 90% Irr 100 ns 500 Ω DUT
Figure 1. Reverse Recovery Time Equivalent Test Circuit
OSCILLOSCOPE R 10 MΩ C 7 pF
VC 20 ns MAX t 10% VCM = Qa C VCM
500 Ω
DUT D1
BAW62 243 pF
100 KΩ
DUTY CYCLE = 2%
Vf
90% 400 ns
t
Figure 2. Stored Charge Equivalent Test Circuit
120 ns V 90%
V 1 KΩ 450 Ω
Vfr t
DUT
50 Ω
10%
DUTY CYCLE = 2% 2 ns MAX
Figure 3. Forward Recovery Voltage Equivalent Test Circuit
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BAS16WT1G
100 IR , REVERSE CURRENT (A) IF, FORWARD CURRENT (mA) 10 TA = 150C TA = 125C
1.0
10 TA = 85C TA = 25C TA = -- 40C
0.1
TA = 85C TA = 55C
1.0
0.01 TA = 25C 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50
0.1
0.2
0.4
0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS)
1.2
0.001
Figure 4. Forward Voltage
Figure 5. Leakage Current
0.68 CD , DIODE CAPACITANCE (pF)
0.64
0.60
0.56
0.52
0
2
4
6
8
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
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BAS16WT1G
PACKAGE DIMENSIONS
SC-70 (SOT-323) CASE 419--04 ISSUE N
D
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A A1 A2 b c D E e e1 L HE MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095
e1
3
HE
1 2
E
b e
A 0.05 (0.002) A1
A2 L
c
SOLDERING FOOTPRINT*
0.65 0.025 0.65 0.025
1.9 0.075 0.9 0.035 0.7 0.028
SCALE 10:1
mm inches
*For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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PUBLICATION ORDERING INFORMATION
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BAS16WT1/D