BAT54XV2
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high−speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand−held and portable
applications where space is limited.
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Features
• Extremely Fast Switching Speed
• Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mA
• S Prefix for Automotive and Other Applications Requiring Unique
•
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
30 VOLT
SILICON HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
1
CATHODE
2
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Reverse Voltage
Symbol
Value
Unit
VR
30
V
Symbol
Max
Unit
PD
200
mW
1.57
mW/°C
1
2
ANODE
SOD−523
CASE 502
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Forward Current (DC)
IF
200 Max
mA
Non−Repetitive Peak Forward
Current, tp < 10 msec
IFSM
600
mA
Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle = 66%
IFRM
300
mA
Thermal Resistance,
Junction−to−Ambient
RJA
635
°C/W
TJ, Tstg
−55 to 125
°C
Junction and Storage Temperature
1
JVM G
G
JV
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon manufacturing location.
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 Minimum Pad.
Package
Shipping†
BAT54XV2T1G
SOD−523
(Pb−Free)
3000 / Tape &
Reel
BAT54XV2T5G
SOD−523
(Pb−Free)
8000 / Tape &
Reel
SBAT54XV2T1G
SOD−523
(Pb−Free)
3000 / Tape &
Reel
SBAT54XV2T5G
SOD−523
(Pb−Free)
8000 / Tape &
Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2017
August, 2018 − Rev. 12
1
Publication Order Number:
BAT54XV2T1/D
BAT54XV2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
30
−
−
V
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
−
7.6
10
pF
Reverse Leakage
(VR = 25 V)
IR
−
0.3
2.0
A
Forward Voltage
(IF = 0.1 mA)
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 30 mA)
(IF = 100 mA)
VF
−
−
−
−
−
0.22
0.28
0.35
0.39
0.46
0.24
0.32
0.40
0.50
0.80
Reverse Recovery Time
(IF = IR = 10 mA, IR(REC) = 1.0 mA) Figure 1
trr
−
−
5.0
Reverse Breakdown Voltage
(IR = 10 A)
V
ns
820
+10 V
2k
100 H
0.1 F
t
IF
tp
r
0.1 F
t
IF
trr
10%
t
DUT
50 Output
Pulse
Generator
50 Input
Sampling
Oscilloscope
90%
iR(REC) = 1 mA
IR
VR
INPUT SIGNAL
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
BAT54XV2
100
1000
IR, REVERSE CURRENT (A)
IF, FORWARD CURRENT (mA)
TA = 150°C
1 50°C
10
1 25°C
1.0
85°C
25°C
0.1
0.0
0.1
0.2
−40°C
0.3
−55°C
0.4
0.5
100
TA = 125°C
10
TA = 85°C
1.0
0.01
0.6
TA = 25°C
0.1
0
5
VF, FORWARD VOLTAGE (VOLTS)
IFSM, FORWARD SURGE MAX CURRENT (A)
CT, TOTAL CAPACITANCE (pF)
12
10
8
6
4
2
5
10
15
20
30
25
20
Figure 3. Leakage Current
14
0
15
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage
0
10
25
30
25
Based on square wave currents
TJ = 25°C prior to surge
20
15
10
5
0
0.001
0.01
0.1
1
10
100
VR, REVERSE VOLTAGE (VOLTS)
tP, PULSE ON TIME (ms)
Figure 4. Total Capacitance
Figure 5. Forward Surge Current
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3
1000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
2
2
1
1
STYLE 1
STYLE 2
SOD−523
CASE 502−01
ISSUE E
SCALE 4:1
−X−
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.
−Y−
E
M
2
X Y
DIM
A
b
c
D
E
HE
L
L2
TOP VIEW
A
c
HE
MILLIMETERS
MIN
NOM
MAX
0.50
0.60
0.70
0.25
0.30
0.35
0.07
0.14
0.20
1.10
1.20
1.30
0.70
0.80
0.90
1.50
1.60
1.70
0.30 REF
0.15
0.20
0.25
GENERIC
MARKING DIAGRAM*
SIDE VIEW
2X
XX
L
1
XX
2
1
STYLE 1
2X
XX
M
L2
RECOMMENDED
SOLDERING FOOTPRINT*
PACKAGE
OUTLINE
= Specific Device Code
Date Code
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
1.80
0.48
2
STYLE 2
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
BOTTOM VIEW
2X
M
b
0.08
1
M
2X
DATE 28 SEP 2010
2X
STYLE 2:
NO POLARITY
0.40
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON11524D
SOD−523
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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