BC449AG

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Other names and brands may be claimed as the property of others. BC447, BC449, BC449A High Voltage Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Collector − Emitter Voltage BC447 BC449, BC449A VCEO Collector-Base Voltage BC447 BC449, BC449A VCBO Emitter-Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 300 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C −55 to +150 °C Operating and Storage Junction Temperature Range Vdc 80 100 3 EMITTER Vdc 80 100 TJ, Tstg Moisture Sensitivity Level (MSL) Electrostatic Discharge (ESD) TO−92 CASE 29 STYLE 17 1 2 BC 44x AYWW G G MSL: 1 NA THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W BC44x = Device Code x = 7 or 9 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping TO−92 5000 Units / Box TO−92 (Pb−Free) 5000 Units / Box TO−92 5000 Units / Box BC449G TO−92 (Pb−Free) 5000 Units / Box BC449A TO−92 5000 Units / Box TO−92 (Pb−Free) 5000 Units / Box BC447 BC447G BC449 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 September, 2005 − Rev. 3 3 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Characteristic 2 BASE Unit 1 BC449AG Publication Order Number: BC447/D BC447, BC449, BC449A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 80 100 − − − − 80 100 − − − − 5.0 − − − − − − 100 100 50 120 50 100 50 60 − − − − − − 460 220 − − − − − 0.125 0.25 − 0.85 − 0.55 − − 0.76 0.7 1.2 100 200 − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CEO BC447 BC449, BC449A V(BR)CBO BC447 BC449, BC449A Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Vdc Vdc V(BR)EBO Vdc ICBO BC447 BC449, BC449A nAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) hFE BC447, BC449 BC449A BC447, BC449 BC449A BC447, BC449 BC449A Collector −Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) VBE(sat) Base −Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) (Note 1) VBE(on) − Vdc Vdc Vdc DYNAMIC CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz) fT 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle 2% http://onsemi.com 2 MHz 300 40 25°C TTJJ==25°C TJ = 25°C 200 VCE = −1.0 V 100 70 50 30 −1.0 −2.0 −3.0 Cibo 10 8.0 6.0 Cobo −5.0 −7.0 −10 −20 −30 2.0 −0.1 −0.2 −50 −70 −100 −5.0 −10 −20 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Current−Gain — Bandwidth Product Figure 2. Capacitance −50 −100 −1.0 k −700 −500 VCC = −40 V IC/IB = 10 IB1 = IB2 TJ = 25°C ts −300 200 −200 tf 100 70 50 −100 −70 −50 tr 30 20 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPS8598 DUTY CYCLE ≤ 10% MPS8599 −30 −20 td @ VBE(off) = −0.5 V −10 −20 −30 −50 −70 −100 −10 −200 −1.0 −5.0 −7.0 −10 −20 −30 −50 −70 −100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 3. Switching Times Figure 4. Active−Region Safe Operating Area 1.0 TJ = 125°C 200 TJ = 25°C 0.8 V, VOLTAGE (VOLTS) 25°C 100 70 −2.0 −3.0 IC, COLLECTOR CURRENT (mA) 300 h FE , DC CURRENT GAIN −0.5 −1.0 −2.0 IC, COLLECTOR CURRENT (mA) 300 10 20 4.0 1.0 k 700 500 t, TIME (ns) C, CAPACITANCE (pF) −5.0 V I C , COLLECTOR CURRENT (mA) f T , CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) BC447, BC449, BC449A −55°C VCE = −5.0 V 50 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 30 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 0 0.2 −50 −100 −200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. DC Current Gain Figure 6. “ON” Voltages http://onsemi.com 3 50 100 200 IC = 10 mA 1.6 IC = 50 mA IC = 20 mA IC = 100 mA R qVB , TEMPERATURE COEFFICIENT (mV/° C) 2.0 IC = 200 mA 1.2 0.8 0.4 TJ = 25°C 0 0.02 0.05 0.1 r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) BC447, BC449, BC449A 1.0 0.7 0.5 0.1 0.07 0.05 1.0 0.5 2.0 5.0 10 −1.4 −1.8 RqVB FOR VBE −55°C TO 125°C −2.2 −2.6 −3.0 20 0.2 0.5 1.0 2.0 5.0 10 20 50 100 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Collector Saturation Region Figure 8. Base−Emitter Temperature Coefficient 200 D = 0.5 0.2 0.3 0.2 0.2 −1.0 0.1 0.05 0.02 SINGLE PULSE ZqJC(t) = r(t) • RqJC TJ(pk) − TC = P(pk) ZqJC(t) ZqJA(t) = r(t) • RqJA TJ(pk) − TA = P(pk) ZqJA(t) D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN469) P(pk) 0.01 t1 SINGLE PULSE 0.03 t2 0.02 DUTY CYCLE, D = t1/t2 0.01 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k t, TIME (ms) Figure 9. Thermal Response http://onsemi.com 4 2.0 k 5.0 k 10 k 20 k 50 k 100 k BC447, BC449, BC449A PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A B R P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X−X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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