BC490_07

BC490 High Current Transistors PNP Silicon Features • This is a Pb−Free Device* http://onsemi.com MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value −80 −80 −4.0 −1.0 625 5.0 1.5 12 −55 to +150 Unit Vdc Vdc Vdc Adc mW mW/°C W mW/°C °C 2 BASE COLLECTOR 1 3 EMITTER TO−92 CASE 29 STYLE 17 12 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W 3 STRAIGHT LEAD BULK PACK Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM BC 490 AYWW G G A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 Package TO−92 (Pb−Free) Shipping 5000 Units / Bulk BC490G 1 March, 2007 − Rev. 3 Publication Order Number: BC490/D BC490 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 1) (IC = −10 mAdc, IB = 0) Collector −Base Breakdown Voltage (IC = −100 mAdc, IE = 0) Emitter −Base Breakdown Voltage (IE = −10 mAdc, IC = 0) Collector Cutoff Current (VCB = −60 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = −10 mAdc, VCE = −2.0 Vdc) (IC = −100 mAdc, VCE = −2.0 Vdc) (IC = −1.0 Adc, VCE = −5.0 Vdc) Collector −Emitter Saturation Voltage (IC = −500 mAdc, IB = −50 mAdc) (IC = −1.0 Adc, IB = −100 mAdc) Base −Emitter Saturation Voltage (IC = −500 mAdc, IB = −50 mAdc) (IC = −1.0 Adc, IB = −100 mAdc) DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = −50 mAdc, VCE = −2.0 Vdc, f = 100 MHz) Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%. fT Cob Cib − − − 150 9.0 110 − − − MHz pF pF hFE 40 60 15 VCE(sat) − − VBE(sat) − − −0.9 −1.0 −1.2 − −0.25 −0.5 −0.5 − Vdc − − − − 400 − Vdc − V(BR)CEO V(BR)CBO V(BR)EBO ICBO −80 −80 −4.0 − − − − − − − − −100 Vdc Vdc Vdc nAdc Symbol Min Typ Max Unit TURN−ON TIME 5.0 ms +10 V 0 tr = 3.0 ns −1.0 V 100 Vin 5.0 mF RB 100 VCC +40 V RL OUTPUT Vin TURN−OFF TIME +VBB 100 RB 5.0 mF 5.0 ms tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities 100 VCC +40 V RL OUTPUT *CS < 6.0 pF *CS < 6.0 pF Figure 1. Switching Time Test Circuits http://onsemi.com 2 BC490 BANDWIDTH PRODUCT (MHz) 200 VCE = −2.0 V TJ = 25°C 100 70 50 f T, CURRENT−GAIN C, CAPACITANCE (pF) 100 70 50 30 20 Cibo TJ = 25°C 10 30 7.0 20 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70 −100 IC, COLLECTOR CURRENT (mA) −200 5.0 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 VR, REVERSE VOLTAGE (VOLTS) Cobo −50 −100 Figure 2. Current−Gain — Bandwidth Product Figure 3. Capacitance 1.0 k 700 500 300 200 t, TIME (ns) 100 70 50 30 20 ts td @ VBE(off) = −0.5 V VCC = −40 V IC/IB = 10 IB1 = IB2 TJ = 25°C tf tr −500 10 −5.0 −7.0 −10 −20 −30 −50 −70 −100 −200 −300 IC, COLLECTOR CURRENT (mA) Figure 4. Switching Time r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 1.0 D = 0.5 0.2 0.1 0.02 0.01 SINGLE PULSE SINGLE PULSE ZqJC(t) = r(t) • RqJC ZqJA(t) = r(t) • RqJA 20 50 100 200 t, TIME (ms) 500 1.0 k 2.0 k 5.0 k P(pk) t1 t2 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN−469) TJ(pk) − TC = P(pk) ZqJC(t) TJ(pk) − TA = P(pk) ZqJA(t) 10 k 20 k 50 k 100 2.0 5.0 10 Figure 5. Thermal Response http://onsemi.com 3 BC490 −1.0 k −700 IC, COLLECTOR CURRENT (mA) −500 −200 TA = 25°C TC = 25°C −100 −70 −50 −30 −20 −10 −1.0 V, VOLTAGE (VOLTS) −300 1.0 s 1.0 ms 100 ms 1.0 TJ = 25°C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT BC490 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70 −100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 5.0 10 50 100 20 IC, COLLECTOR CURRENT (mA) 200 500 Figure 6. Active Region, Safe Operating Area Figure 7. “On” Voltages VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) TJ = 25°C 0.8 IC = 10 mA 50 mA 100 mA 250 mA 500 mA 0.6 0.4 RθVB, TEMPERATURE COEFFICIENT (mV/°C) 1.0 −0.8 −1.2 −1.6 −2.0 RqVB for VBE 0.2 0 0.05 −2.4 −2.8 0.5 0.1 0.2 1.0 2.0 10 0.5 5.0 IC, COLLECTOR CURRENT (mA) 20 50 1.0 2.0 10 100 5.0 20 50 IC, COLLECTOR CURRENT (mA) 200 500 Figure 8. Collector Saturation Region Figure 9. Base−Emitter Temperature Coefficient 400 TJ = 125°C hFE , DC CURRENT GAIN 200 25°C −55°C 100 80 60 40 −0.5 VCE = −1.0 V −0.7 −1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 IC, COLLECTOR CURRENT (mA) −50 −70 −100 −200 −300 −500 Figure 10. DC Current Gain http://onsemi.com 4 BC490 −1.0 TJ = 25°C −0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 −0.6 −0.4 VBE(on) @ VCE = −1.0 V VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) −1.0 TJ = 25°C −0.8 −0.6 IC = −10 mA −50 mA −100 mA −250 mA −500 mA −0.4 −0.2 VCE(sat) @ IC/IB = 10 0 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (mA) −500 −0.2 0 −0.05 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 IB, BASE CURRENT (mA) −10 −20 −50 Figure 11. “On” Voltages Figure 12. Collector Saturation Region RθVB, TEMPERATURE COEFFICIENT (mV/°C) −0.8 −1.2 −1.6 RqVB for VBE −2.0 −2.4 −2.8 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (mA) −500 Figure 13. Base−Emitter Temperature Coefficient http://onsemi.com 5 BC490 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A R P L SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− B STRAIGHT LEAD BULK PACK K XX G H V 1 D J C SECTION X−X N N R A B BENT LEAD TAPE & REEL AMMO PACK P T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 −−− 2.04 2.66 1.50 4.00 2.93 −−− 3.43 −−− STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER K XX G D J V C SECTION X−X N 1 DIM A B C D G J K N P R V ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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