BC848CPDW1T1G

BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G Dual General Purpose Transistors NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features (3) http://onsemi.com (2) (1) • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS − NPN Rating Collector-Emitter Voltage BC846 BC847 BC848 BC846 BC847 BC848 Symbol VCEO Value 65 45 30 80 50 30 6.0 100 Unit V Q1 Q2 (4) (5) (6) MARKING DIAGRAM 6 Collector-Base Voltage VCBO V 1 V mAdc SOT−363 CASE 419B STYLE 1 1 XX MG G Emitter−Base Voltage Collector Current − Continuous VEBO IC MAXIMUM RATINGS − PNP Rating Collector-Emitter Voltage BC846 BC847 BC848 BC846 BC847 BC848 Symbol VCEO Value −65 −45 −30 −80 −50 −30 −5.0 −100 Unit V XX = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION V Device Mark Package SOT−363 (Pb−Free) SOT−363 (Pb−Free) SOT−363 (Pb−Free) SOT−363 (Pb−Free) Shipping† 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel Collector-Base Voltage VCBO BC846BPDW1T1G BB V mAdc BC847BPDW1T1G BF BC847BPDW1T2G BF Emitter−Base Voltage Collector Current − Continuous VEBO IC Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 1. FR−5 = 1.0 x 0.75 x 0.062 in. Symbol PD Max 380 250 3.0 RqJA TJ, Tstg 328 − 55 to +150 Unit mW BC848CPDW1T1G BL †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. mW/°C °C/W °C © Semiconductor Components Industries, LLC, 2010 October, 2010 − Rev. 6 1 Publication Order Number: BC846BPDW1T1/D BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G ELECTRICAL CHARACTERISTICS (NPN) (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = 10 mA) BC846 Series BC847 Series BC848 Series BC846 Series BC847B Only BC848 Series BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series BC848 Series V(BR)CEO V 65 45 30 80 50 30 80 50 30 6.0 6.0 5.0 − − − − − − − − − − − − − − − − − − − V − − − V − − − V − − − 15 5.0 nA mA Symbol Min Typ Max Unit Collector − Emitter Breakdown Voltage (IC = 10 mA, VEB = 0) V(BR)CES Collector − Base Breakdown Voltage (IC = 10 mA) V(BR)CBO Emitter − Base Breakdown Voltage (IE = 1.0 mA) V(BR)EBO Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) ON CHARACTERISTICS DC Current Gain (IC = 10 mA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) BC846B, BC847B BC848C BC846B, BC847B BC848C ICBO hFE − − − 200 420 150 270 290 520 − − 0.7 0.9 660 − − − 475 800 0.25 0.6 − − 700 770 V V mV Collector − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector − Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base − Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base − Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base − Emitter Voltage (IC = 10 mA, VCE = 5.0 V) SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) VCE(sat) VBE(sat) VBE(on) − − − − 580 − fT Cobo NF 100 − − − − − − 4.5 10 MHz pF dB http://onsemi.com 2 BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G ELECTRICAL CHARACTERISTICS (PNP) (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = −10 mA) BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series BC848 Series V(BR)CEO V −65 −45 −30 −80 −50 −30 −80 −50 −30 −5.0 −5.0 −5.0 − − − − − − − − − − − − − − − − − − − V − − − V − − − V − − − −15 −4.0 nA mA Symbol Min Typ Max Unit Collector − Emitter Breakdown Voltage (IC = −10 mA, VEB = 0) V(BR)CES Collector − Base Breakdown Voltage (IC = −10 mA) V(BR)CBO Emitter − Base Breakdown Voltage (IE = −1.0 mA) V(BR)EBO Collector Cutoff Current (VCB = −30 V) Collector Cutoff Current (VCB = −30 V, TA = 150°C) ON CHARACTERISTICS DC Current Gain (IC = −10 mA, VCE = −5.0 V) (IC = −2.0 mA, VCE = −5.0 V) BC846B, BC847B BC848C BC846B, BC847B BC848C ICBO hFE − − − 200 420 150 270 290 520 − − −0.7 −0.9 − − − − 475 800 V − − − − −0.6 − −0.3 −0.65 V − − V −0.75 −0.82 Collector − Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) Base − Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) Base − Emitter On Voltage (IC = −2.0 mA, VCE = −5.0 V) (IC = −10 mA, VCE = −5.0 V) SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = −10 V, f = 1.0 MHz) Noise Figure (IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) VCE(sat) VBE(sat) VBE(on) fT Cob NF 100 − − − − − − 4.5 10 MHz pF dB http://onsemi.com 3 BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G TYPICAL NPN CHARACTERISTICS − BC846 500 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 150°C hFE, DC CURRENT GAIN 400 300 200 100 0 25°C VCE = 1 V 0.30 IC/IB = 20 0.25 0.20 0.15 0.10 0.05 0 150°C 25°C −55°C 0.0001 0.001 0.01 0.1 −55°C 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) 1.1 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 150°C −55°C 25°C IC/IB = 20 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Figure 2. Collector Emitter Saturation Voltage vs. Collector Current VCE = 5 V −55°C 25°C 150°C 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. Base Emitter Saturation Voltage vs. Collector Current VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 TA = 25°C 1.6 20 mA 1.2 IC = 10 mA 50 mA 100 mA 200 mA θVB, TEMPERATURE COEFFICIENT (mV/ °C) -1.0 Figure 4. Base Emitter Voltage vs. Collector Current -1.4 -1.8 qVB for VBE -2.2 -55°C to 125°C 0.8 0.4 -2.6 0 -3.0 0.2 0.5 10 20 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) 50 100 200 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20 Figure 5. Collector Saturation Region Figure 6. Base−Emitter Temperature Coefficient http://onsemi.com 4 BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G TYPICAL NPN CHARACTERISTICS − BC846 40 TA = 25°C C, CAPACITANCE (pF) 20 Cib 10 6.0 4.0 Cob f T, CURRENT-GAIN - BANDWIDTH PRODUCT 500 VCE = 5 V TA = 25°C 200 100 50 20 2.0 0.1 0.2 0.5 1.0 2.0 10 20 5.0 VR, REVERSE VOLTAGE (VOLTS) 50 100 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) Figure 7. Capacitance Figure 8. Current−Gain − Bandwidth Product http://onsemi.com 5 BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G TYPICAL PNP CHARACTERISTICS — BC846 500 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 150°C hFE, DC CURRENT GAIN 400 25°C 300 200 100 0 −55°C VCE = 1 V 0.30 IC/IB = 20 0.25 0.20 25°C 0.15 0.10 −55°C 0.05 0 150°C 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 9. DC Current Gain vs. Collector Current −55°C VBE(on), BASE−EMITTER VOLTAGE (V) 1.0 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 150°C IC/IB = 20 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Figure 10. Collector Emitter Saturation Voltage vs. Collector Current VCE = 5 V −55°C 25°C 150°C 25°C 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Base Emitter Saturation Voltage vs. Collector Current VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) -2.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) -1.0 Figure 12. Base Emitter Voltage vs. Collector Current -1.6 IC = -10 mA -20 mA -50 mA -100 mA -200 mA -1.4 -1.2 -1.8 qVB for VBE -55°C to 125°C -0.8 -2.2 -0.4 TJ = 25°C 0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 IB, BASE CURRENT (mA) -5.0 -10 -20 -2.6 -3.0 -0.2 -0.5 -1.0 -50 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) -100 -200 Figure 13. Collector Saturation Region Figure 14. Base−Emitter Temperature Coefficient http://onsemi.com 6 BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G TYPICAL PNP CHARACTERISTICS — BC846 f T, CURRENT-GAIN - BANDWIDTH PRODUCT 40 TJ = 25°C C, CAPACITANCE (pF) 20 Cib 500 VCE = -5.0 V 200 100 50 10 8.0 6.0 4.0 2.0 -0.1 -0.2 Cob 20 -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) -50 -100 -100 -1.0 -10 IC, COLLECTOR CURRENT (mA) Figure 15. Capacitance Figure 16. Current−Gain − Bandwidth Product http://onsemi.com 7 BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G TYPICAL NPN CHARACTERISTICS − BC847 SERIES 500 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 150°C hFE, DC CURRENT GAIN 400 300 200 100 0 25°C VCE = 1 V 0.30 IC/IB = 20 0.25 0.20 0.15 0.10 0.05 0 25°C 150°C −55°C −55°C 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 17. DC Current Gain vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) 1.1 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC/IB = 20 −55°C 25°C 150°C 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Figure 18. Collector Emitter Saturation Voltage vs. Collector Current VCE = 5 V −55°C 25°C 150°C 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 19. Base Emitter Saturation Voltage vs. Collector Current 2.0 VCE , COLLECTOR-EMITTER VOLTAGE (V) θVB, TEMPERATURE COEFFICIENT (mV/ °C) TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA 0.8 IC = 50 mA IC = 100 mA 1.0 Figure 20. Base Emitter Voltage vs. Collector Current -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 0.4 0 0.02 0.1 1.0 IB, BASE CURRENT (mA) 10 20 0.2 10 1.0 IC, COLLECTOR CURRENT (mA) 100 Figure 21. Collector Saturation Region Figure 22. Base−Emitter Temperature Coefficient http://onsemi.com 8 BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G TYPICAL NPN CHARACTERISTICS − BC847 SERIES 10 7.0 C, CAPACITANCE (pF) 5.0 Cib TA = 25°C f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 400 300 200 3.0 Cob 2.0 100 80 60 40 30 20 0.5 0.7 VCE = 10 V TA = 25°C 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 50 Figure 23. Capacitances Figure 24. Current−Gain − Bandwidth Product http://onsemi.com 9 BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G TYPICAL PNP CHARACTERISTICS − BC847 SERIES 500 400 300 200 100 0 25°C 150°C 0.35 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE = 1 V 0.30 0.25 0.20 0.15 0.10 0.05 0 0.0001 0.001 0.01 0.1 −55°C 25°C IC/IB = 20 150°C hFE, DC CURRENT GAIN −55°C 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 25. DC Current Gain vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) 1.0 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 150°C IC/IB = 20 −55°C 25°C 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Figure 26. Collector Emitter Saturation Voltage vs. Collector Current VCE = 5 V −55°C 25°C 150°C 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 27. Base Emitter Saturation Voltage vs. Collector Current -2.0 VCE , COLLECTOR-EMITTER VOLTAGE (V) θVB , TEMPERATURE COEFFICIENT (mV/ °C) TA = 25°C -1.6 1.0 Figure 28. Base Emitter Voltage vs. Collector Current -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 -1.2 IC = -10 mA IC = -50 mA IC = -200 mA IC = -100 mA -0.8 -0.4 IC = -20 mA 0 -0.02 -0.1 -1.0 IB, BASE CURRENT (mA) -10 -20 -0.2 -10 -1.0 IC, COLLECTOR CURRENT (mA) -100 Figure 29. Collector Saturation Region Figure 30. Base−Emitter Temperature Coefficient http://onsemi.com 10 BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G TYPICAL PNP CHARACTERISTICS − BC847 SERIES 10 Cib 7.0 C, CAPACITANCE (pF) 5.0 Cob TA = 25°C f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 400 300 200 150 100 80 60 40 30 20 -0.5 VCE = -10 V TA = 25°C 3.0 2.0 1.0 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 31. Capacitances Figure 32. Current−Gain − Bandwidth Product http://onsemi.com 11 BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G TYPICAL NPN CHARACTERISTICS − BC848 SERIES 1000 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 900 hFE, DC CURRENT GAIN 800 150°C 700 600 500 400 300 −55°C 200 100 0 0.001 0.01 0.1 1 25°C VCE = 1 V 0.30 0.25 0.20 0.15 0.10 −55°C 0.05 0 25°C IC/IB = 20 150°C 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 33. DC Current Gain vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) 1.1 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC/IB = 20 −55°C 25°C 150°C 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Figure 34. Collector Emitter Saturation Voltage vs. Collector Current VCE = 5 V −55°C 25°C 150°C 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 35. Base Emitter Saturation Voltage vs. Collector Current 2.0 VCE , COLLECTOR-EMITTER VOLTAGE (V) θVB, TEMPERATURE COEFFICIENT (mV/ °C) TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA 0.8 IC = 50 mA IC = 100 mA 1.0 Figure 36. Base Emitter Voltage vs. Collector Current -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 0.4 0 0.02 0.1 1.0 IB, BASE CURRENT (mA) 10 20 0.2 10 1.0 IC, COLLECTOR CURRENT (mA) 100 Figure 37. Collector Saturation Region Figure 38. Base−Emitter Temperature Coefficient http://onsemi.com 12 BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G TYPICAL NPN CHARACTERISTICS − BC848 SERIES 10 7.0 C, CAPACITANCE (pF) 5.0 Cib TA = 25°C f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 400 300 200 3.0 Cob 2.0 100 80 60 40 30 20 0.5 0.7 VCE = 10 V TA = 25°C 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 50 Figure 39. Capacitances Figure 40. Current−Gain − Bandwidth Product http://onsemi.com 13 BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G TYPICAL PNP CHARACTERISTICS − BC848 SERIES 1000 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 900 hFE, DC CURRENT GAIN 800 700 600 500 400 300 200 100 0 0.001 0.01 0.1 1 −55°C 25°C 150°C VCE = 1 V 0.30 IC/IB = 20 0.25 0.20 25°C 0.15 0.10 0.05 0 150°C −55°C 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 41. DC Current Gain vs. Collector Current −55°C 25°C VBE(on), BASE−EMITTER VOLTAGE (V) 1.0 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC/IB = 20 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Figure 42. Collector Emitter Saturation Voltage vs. Collector Current VCE = 5 V −55°C 25°C 150°C 150°C 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 43. Base Emitter Saturation Voltage vs. Collector Current -2.0 VCE , COLLECTOR-EMITTER VOLTAGE (V) θVB , TEMPERATURE COEFFICIENT (mV/ °C) TA = 25°C -1.6 1.0 Figure 44. Base Emitter Voltage vs. Collector Current -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 -1.2 IC = -10 mA IC = -50 mA IC = -200 mA IC = -100 mA -0.8 -0.4 IC = -20 mA 0 -0.02 -0.1 -1.0 IB, BASE CURRENT (mA) -10 -20 -0.2 -10 -1.0 IC, COLLECTOR CURRENT (mA) -100 Figure 45. Collector Saturation Region Figure 46. Base−Emitter Temperature Coefficient http://onsemi.com 14 BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G TYPICAL PNP CHARACTERISTICS − BC848 SERIES 10 Cib 7.0 C, CAPACITANCE (pF) 5.0 Cob TA = 25°C f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 400 300 200 150 100 80 60 40 30 20 -0.5 VCE = -10 V TA = 25°C 3.0 2.0 1.0 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 47. Capacitances Figure 48. Current−Gain − Bandwidth Product http://onsemi.com 15 BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G 1.0 D = 0.5 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.2 0.1 0.05 0.02 0.01 0.01 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.001 0 1.0 10 100 t, TIME (ms) 1.0 k 10 k 100 k 1.0 M ZqJA(t) = r(t) RqJA RqJA = 328°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJC(t) 0.1 Figure 49. Thermal Response -200 1s IC, COLLECTOR CURRENT (mA) -100 -50 TA = 25°C TJ = 25°C 3 ms -10 -5.0 BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V) -2.0 -1.0 The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 50 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 49. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. Figure 50. Active Region Safe Operating Area http://onsemi.com 16 BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G PACKAGE DIMENSIONS SC−88/SOT−363/SC70−6 CASE 419B−02 ISSUE W e NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. 4 DIM A A1 A3 b C D E e L HE MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 D 6 5 HE 1 2 3 −E− b 6 PL 0.2 (0.008) M E M A3 C A STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 A1 0.50 0.0197 L SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches SC−88/SC70−6/SOT−363 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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