BDX33B_06

BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features http://onsemi.com • High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0 • Collector−Emitter Sustaining Voltage at 100 mAdc • • • VCEO(sus) = 80 Vdc (min) − BDX33B, BDX334B = 100 Vdc (min) − BDX33C, BDX334C Low Collector−Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc − BDX33B, 33C/34B, 34C Monolithic Construction with Build−In Base−Emitter Shunt Resistors Pb−Free Packages are Available* DARLINGTON 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80−100 VOLTS, 65 WATTS MAXIMUM RATINGS Rating Collector−Emitter Voltage BDX33B, BDX34B BDX33C, BDX34C Collector−Base Voltage BDX33B, BDX34B BDX33C, BDX34C Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25_C Derate above 25°C Operating and Storage Junction Temperature Range − Continuous − Peak VEB IC IB PD TJ, Tstg Symbol VCEO 80 100 VCB 80 100 5.0 10 15 0.25 70 0.56 −65 to +150 Vdc Adc Adc W W/_C _C BDX3xyG AY WW Vdc Value Unit Vdc 1 2 TO−220AB CASE 221A−09 STYLE 1 3 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction−to−Case Symbol RqJC Max 1.78 Unit _C/W BDX3xy = Device Code x = 3 or 4 y = B or C A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 1 February, 2006 − Rev. 11 Publication Order Number: BDX33B/D Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î Î ÎÎ Î ÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎ Î Î ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎ Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎ Î ÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î Î ÎÎ Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 2. Pulse Test non repetitive: Pulse Width = 0.25 seconds. ON CHARACTERISTICS OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Diode Forward Voltage (IC = 8.0 Adc) Base−Emitter On Voltage (IC = 3.0 Adc, VCE = 3.0 Vdc) Collector−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 6.0 mAdc) DC Current Gain (Note 1) (IC = 3.0 Adc, VCE = 3.0 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCB = rated VCBO, IE = 0) Collector Cutoff Current (VCE = 1/2 rated VCEO, IB = 0) Collector−Emitter Sustaining Voltage (Note 1) (IC = 100 mAdc, IB = 0, VBE = 1.5 Vdc) Collector−Emitter Sustaining Voltage (Note 1) (IC = 100 mAdc, IB = 0, RBE = 100) Collector−Emitter Sustaining Voltage (Note 1) (IC = 100 mAdc, IB = 0) BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) Characteristic PD, POWER DISSIPATION (WATTS) 20 40 60 80 0 0 20 TC = 25_C TC = 100_C TC = 25_C TC = 100_C 40 Figure 1. Power Derating http://onsemi.com 60 80 100 120 TC, CASE TEMPERATURE (°C) BDX33B, 33C/34B, 34C BDX33B, 33C/34B, 34C BDX33B, 33C/34B, 34C BDX33B/BDX34B BDX33C/BDX34C BDX33B/BDX34B BDX33C/BDX33C BDX33B/BDX34B BDX33C/BDX34C 140 VCEO(sus) VCER(sus) VCEX(sus) Symbol VCE(sat) VBE(on) ICBO ICEO IEBO hFE VF 160 Min 750 80 100 80 100 80 100 − − − − − − − − Max 4.0 2.5 2.5 1.0 5.0 0.5 10 10 − − − − − − − mAdc mAdc mAdc Unit Vdc Vdc Vdc Vdc Vdc Vdc − 2 BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.1 0.05 0.02 t1 0.01 SINGLE PULSE t2 SINGLE PULSE P(pk) 0.1 0.07 0.05 0.03 0.02 0.01 0.01 RqJC(t) = r(t) RqJC RqJC = 1.92°C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJC(t) 50 100 200 300 500 1000 DUTY CYCLE, D = t1/t2 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 0.02 0.03 Figure 1. Thermal Response 20 10 IC, COLLECTOR CURRENT (AMP) 5.0 2.0 1.0 0.5 0.2 0.1 TC = 25°C 5.0 ms 1.0 ms dc 500 ms 20 IC, COLLECTOR CURRENT (AMP) 10 5.0 2.0 1.0 0.5 0.2 0.1 TC = 25°C 5.0 ms 1.0 ms dc 500 ms 100 ms 100 ms BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO BDX34B BDX34C 2.0 3.0 5.0 7.0 10 20 30 50 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 70 100 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO BDX33B BDX33C 2.0 3.0 5.0 7.0 10 20 30 50 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 70 100 0.05 0.02 1.0 0.05 0.02 1.0 Figure 2. Active−Region Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 3 is based on TJ(pk) 10,000 5000 3000 2000 1000 500 300 200 100 50 30 20 10 1.0 2.0 PNP NPN 5.0 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 TJ = 25°C VCE = 4.0 Vdc IC = 3.0 Adc = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) = 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 300 200 C, CAPACITANCE (pF) hFE , SMALL−SIGNAL CURRENT GAIN TJ = 25°C 100 70 50 PNP NPN 0.2 Cib Cob 30 0.1 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 3. Small−Signal Current Gain Figure 4. Capacitance http://onsemi.com 3 BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) NPN BDX33B, 33C 20,000 VCE = 4.0 V 10,000 hFE , DC CURRENT GAIN 5000 3000 2000 1000 −55 °C 500 300 200 TJ = 150°C 10,000 hFE , DC CURRENT GAIN 5000 3000 2000 1000 500 300 200 −55 °C 25°C TJ = 150°C 20,000 VCE = 4.0 V PNP BDX34B, 34C 25°C 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 Figure 5. DC Current Gain VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 3.0 TJ = 25°C 2.6 IC = 2.0 A 2.2 4.0 A 6.0 A VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 3.0 TJ = 25°C 2.6 IC = 2.0 A 2.2 4.0 A 6.0 A 1.8 1.8 1.4 1.0 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IB, BASE CURRENT (mA) 10 20 30 Figure 6. Collector Saturation Region 3.0 TJ = 25°C V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.5 3.0 TJ = 25°C 2.5 2.0 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4.0 V VCE(sat) @ IC/IB = 250 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 2.0 VBE @ VCE = 4.0 V VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 1.5 1.0 0.5 1.5 1.0 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 7. “On” Voltages http://onsemi.com 4 BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) ORDERING INFORMATION Device BDX33B BDX33BG BDX33C BDX33CG BDX34B BDX34BG BDX34C BDX34CG Package TO−220 TO−220 (Pb−Free) TO−220 TO−220 (Pb−Free) TO−220 TO−220 (Pb−Free) TO−220 TO−220 (Pb−Free) 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail Shipping † †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) PACKAGE DIMENSIONS TO−220AB CASE 221A−09 ISSUE AA −T− B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 Q 123 A U K H Z L V G D N R J STYLE 1: PIN 1. 2. 3. 4. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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