BF493SG

BF493S High Voltage Transistor PNP Silicon Features • This is a Pb−Free Device* MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above = 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value −350 −350 −6.0 −500 625 5.0 1.5 12 −55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C W mW/°C °C http://onsemi.com COLLECTOR 3 2 BASE 1 EMITTER THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W 3 STRAIGHT LEAD BULK PACK 12 TO−92 CASE 29 STYLE 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM BF 493S AYWW G G A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 Package TO−92 (Pb−Free) Shipping 5000 Units / Bulk BF493SG 1 March, 2007 − Rev. 4 Publication Order Number: BF493S/D BF493S ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 1) (IC = −1.0 mAdc, IB = 0) Collector −Base Breakdown Voltage (IC = −100 mAdc, IE = 0) Emitter −Base Breakdown Voltage (IE = −100 mAdc, IC = 0) Collector Cutoff Current (VCE = −250 Vdc) Emitter Cutoff Current (VEB = −6.0 Vdc, IC = 0) Collector Cutoff Current (VCB = −250 Vdc, IE = 0, TA = 25°C) (VCB = −250 Vdc, IE = 0, TA = 100°C) ON CHARACTERISTICS DC Current Gain (IC = −1.0 mAdc, VCE = −10 Vdc) (IC = −10 mAdc, VCE = −10 Vdc) Collector −Emitter Saturation Voltage (IC = −20 mAdc, IB = −2.0 mAdc) Base −Emitter On Voltage (IC = −20 mA, IB = −2.0 mA) DYNAMIC CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mAdc, VCE = −20 Vdc, f = 20 MHz) Common−Emitter Feedback Capacitance (VCB = −100 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. fT Cre 50 − − 1.6 MHz pF hFE 25 40 VCE(sat) VBE(sat) − − − − −2.0 −2.0 Vdc Vdc − V(BR)CEO V(BR)CBO V(BR)EBO ICES IEBO ICBO − − −0.005 −1.0 −350 −350 −6.0 − − − − − −10 0.1 Vdc Vdc Vdc nAdc mAdc mAdc Symbol Min Max Unit 150 100 hFE, DC CURRENT GAIN TJ = +125°C +25°C VCE = −10 Vdc 70 50 −55°C 30 20 15 −1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −80 −100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain http://onsemi.com 2 BF493S 100 50 C, CAPACITANCE (pF) BANDWIDTH PRODUCT (MHz) 100 80 60 40 30 20 Cib TJ = 25°C VCE = −20 Vdc 20 10 5.0 2.0 Ccb 1.0 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −500 −1000 VR, REVERSE VOLTAGE (VOLTS) f T, CURRENT−GAIN 0 −1.0 −2.0 −5.0 −10 −20 IC, COLLECTOR CURRENT (mA) −50 −100 Figure 2. Capacitances Figure 3. Current−Gain — Bandwidth Product −1.0 −0.8 V, VOLTAGE (VOLTS) VBE @ VCE = −10 V −0.6 −500 IC, COLLECTOR CURRENT (mA) 1.0 ms −200 −100 MPSA93 −50 1.5 WATT THERMAL LIMITATION @ TC = 25°C 625 mW THERMAL LIMITATION @ TA = 25°C 100 ms 1.0 s −0.4 MPSA92 −20 −10 −0.2 VCE(sat) @ IC/IB = 10 mA 0 −1.0 −2.0 −5.0 −10 −20 IC, COLLECTOR CURRENT (mA) −50 −100 −5.0 −3.0 BONDING WIRE LIMITATION SECOND BREAKDOWN LIMITATION TJ = 150°C −5.0 −100 −200 −300 −10 −20 −30 −50 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 4. “On” Voltages Figure 5. Active Region — Safe Operating Area http://onsemi.com 3 BF493S PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A R P L SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− B STRAIGHT LEAD BULK PACK K XX G H V 1 D J C SECTION X−X N N R A B BENT LEAD TAPE & REEL AMMO PACK P T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 −−− 2.04 2.66 1.50 4.00 2.93 −−− 3.43 −−− STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR K XX G D J V C SECTION X−X N 1 DIM A B C D G J K N P R V ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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