BS108ZL1G

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Other names and brands may be claimed as the property of others. BS108 Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage display drivers. 250 mAMPS 200 VOLTS RDS(on) = 8 W Features N−Channel D • Low Drive Requirement, VGS = 3.0 V max • Inherent Current Sharing Capability Permits Easy Paralleling of many Devices • AEC Qualified • PPAP Capable • This is a Pb−Free Device* G S MAXIMUM RATINGS Symbol Value Unit Drain −Source Voltage Rating VDSS 200 Vdc Gate−Source Voltage VGS ±20 Vdc Drain Current Continuous (Note 1) Pulsed (Note 2) ID 250 500 Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Operating and Storage Temperature Range IDM PD TJ, Tstg MARKING DIAGRAM mAdc 350 6.4 mW mW/°C −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 1 2 TO−92 CASE 29−11 STYLE 30 3 A BS108 YWW G G BS108 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping BS108ZL1G TO−92 (Pb−Free) 2000/Ammo Pack *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2011 April, 2011 − Rev. 4 1 Publication Order Number: BS108/D BS108 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit 200 − − − Vdc − − 30 − − 10 0.5 − 1.5 − − − − 10 8.0 − − 25 − 0.33 − − − 150 − − 30 − − 10 OFF CHARACTERISTICS V(BR)DS Drain−Source Breakdown Voltage (VGS = 0, ID = 10 mA) Zero Gate Voltage Drain Current (VDSS = 130 Vdc, VGS = 0) IDSS Gate−Body Leakage Current (VGS = 15 Vdc, VDS = 0) IGSSF nAdc nAdc ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (ID = 1.0 mA, VDS = VGS) VGS(th) Static Drain−to−Source On−Resistance (VGS = 2.0 Vdc, ID = 50 mA) (VGS = 2.8 Vdc, ID = 100 mA) rDS(on) Drain Cutoff Current (VGS = 0.2 V, VDS = 70 V) IDSX Forward Transconductance (ID = 120 mA, VDS = 20 V) gFS Vdc W mA Mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Ciss Output Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Coss Reverse Transfer Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Crss pF pF pF SWITCHING CHARACTERISTICS Turn−On Time (See Figure 1) td(on) − − 15 ns Turn−Off Time (See Figure 1) td(off) − − 15 ns 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%. RESISTIVE SWITCHING +25 V TO SAMPLING SCOPE 50 W INPUT 23 PULSE GENERATOR 20 dB 50 W ATTENUATOR Vin 40 pF Vout toff 90% 90% OUTPUT V INVERTED out 50 50 ton 1.0 M 10% 90% 10 V INPUT Vin 50% 10% PULSE WIDTH 50% Figure 2. Switching Waveforms Figure 1. Switching Test Circuit http://onsemi.com 2 BS108 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X N 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- N A R BENT LEAD TAPE & REEL AMMO PACK B P T SEATING PLANE G K D X X J V 1 C N SECTION X−X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --- STYLE 30: PIN 1. DRAIN 2. GATE 3. SOURCE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 3 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BS108/D