BUD42D
High Speed, High Gain
Bipolar NPN Transistor with
Antisaturation Network and
Transient Voltage
Suppression Capability
http://onsemi.com
4 AMPERES
650 VOLTS, 25 WATTS
POWER TRANSISTOR
The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic
characteristics and lot to lot minimum spread make it ideally suitable
for light ballast applications.
Features
•
•
•
•
•
•
Free−Wheeling Diode Built−In
Flat DC Current Gain
Fast Switching Times and Tight Distribution
“6 Sigma” Process Providing Tight and Reproducible Parameter
Spreads
Epoxy Meets UL 94 V−0 @ 0.125 in
These Devices are Pb−Free and are RoHS Compliant
MARKING
DIAGRAMS
Two Versions
1 2
Symbol
Value
Unit
Collector−Emitter Sustaining Voltage
VCEO
350
Vdc
Collector−Base Breakdown Voltage
VCBO
650
Vdc
Collector−Emitter Breakdown Voltage
VCES
650
Vdc
Emitter−Base Voltage
VEBO
9
Vdc
IC
4.0
Adc
ICM
8.0
Adc
IB
1.0
Adc
Base Current − Peak (Note 1)
IBM
2.0
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25_C
PD
25
0.2
W
W/_C
TJ, Tstg
−65 to
+150
_C
ESD − Human Body Model
HBM
3B
V
ESD − Machine Model
MM
C
V
hFE
hFE
13
16
−
−
Collector Current − Continuous
Collector Current − Peak (Note 1)
Base Current − Continuous
Operating and Storage Temperature
TYPICAL GAIN
Typical Gain @ IC = 1 A, VCE = 2 V
Typical Gain @ IC = 0.3 A, VCE = 1 V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle = 10%10
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 6
1
3
DPAK
CASE 369C
STYLE 1
2
1
Collector 3
Base
Emmitter
4
Collector
4
1
AYWW
BU
D42DG
MAXIMUM RATINGS
AYWW
BU
D42DG
4
• BUD42D−1: Case 369D for Insertion Mode
• BUD42D, BUD42DT4: Case 369C for Surface Mount Mode
Rating
4
Collector
2
3
DPAK
CASE 369D
STYLE 1
1
2
3
Base Collector Emmitter
A
Y
WW
BUD43D
G
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
Publication Order Number:
BUD42D/D
BUD42D
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction−to−Case
RqJC
5.0
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
71.4
°C/W
TL
260
°C
Maximum Lead Temperature for Soldering Purposes: 1/8 in from Case for 5 seconds
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
350
430
−
650
780
−
9.0
12
−
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 100 mA, L = 25 mH)
VCEO(sus)
Collector−Base Breakdown Voltage
(ICBO = 1 mA)
VCBO
Emitter−Base Breakdown Voltage
(IEBO = 1 mA)
VEBO
Vdc
Vdc
Vdc
Collector Cutoff Current
(VCE = Rated VCEO, IB = 0)
@ TC = 25°C
@ TC = 125°C
ICEO
−
−
−
−
100
200
mAdc
Collector Cutoff Current
(VCE = Rated VCES, VEB = 0)
@ TC = 25°C
@ TC = 125°C
ICES
−
−
−
−
10
200
mAdc
−
−
100
Emitter−Cutoff Current
(VEB = 9 Vdc, IC = 0)
IEBO
mAdc
ON CHARACTERISTICS
Base−Emitter Saturation Voltage
(IC = 1 Adc, IB = 0.2 Adc)
VBE(sat)
−
0.85
1.2
Vdc
Collector−Emitter Saturation Voltage
(IC = 2 Adc, IB = 0.5 Adc)
VCE(sat)
−
0.2
1.0
Vdc
8.0
10
13
12
−
−
−
0.9
1.5
4.6
−
6.55
−
−
0.8
−
−
2.8
3.2
−
−
DC Current Gain
(IC = 1 Adc, VCE = 2 Vdc)
(IC = 2 Adc, VCE = 5 Vdc)
hFE
−
DIODE CHARACTERISTICS
Forward Diode Voltage
(IEC = 1.0 Adc)
VEC
V
SWITCHING CHARACTERISTICS: Resistive Load (D.C.≤ 10%, Pulse Width = 40 ms)
Turn−Off Time
(IC = 1.2 Adc, IB1 = 0.4 A, IB2 = 0.1 A, VCC = 300 V)
Toff
Fall Time
(IC = 2.5 Adc, IB1 = IB2 = 0.5 A, VCC = 150 V, VBE = −2 V)
Tf
ms
ms
DYNAMIC SATURATION VOLTAGE
Dynamic Saturation
Voltage:
Determined 1 ms and
3 ms respectively after
rising IB1 reaches
90% of final IB1
IC = 400 mA
IB1 = 40 mA
VCC = 300 V
IC = 1 A
IB1 = 200 mA
VCC = 300 V
VCE(dsat)
@ 1 ms
@ TC = 25°C
@ TC = 125°C
@ 3 ms
@ TC = 25°C
@ TC = 125°C
−
−
0.75
1.3
−
−
@ 1 ms
@ TC = 25°C
@ TC = 125°C
−
−
2.1
4.7
−
−
@ 3 ms
@ TC = 25°C
@ TC = 125°C
−
−
0.35
0.6
−
−
http://onsemi.com
2
V
BUD42D
TYPICAL STATIC CHARACTERISTICS
100
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
100
TJ = 125°C
TJ = 25°C
10
TJ = -20°C
1
TJ = 125°C
TJ = 25°C
10
TJ = -20°C
1
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
0.001
Figure 1. DC Current Gain @ VCE = 1 V
10
IC/IB = 5
VCE , VOLTAGE (VOLTS)
TJ = 25°C
VCE , VOLTAGE (VOLTS)
10
Figure 2. DC Current Gain @ VCE = 5 V
3
2A
2
1.5 A
1A
1
IC = 0.2 A
0
0.001
0.01
1
TJ = 125°C
0.1
TJ = 25°C
TJ = -20°C
0.4 A
0.1
1
IB, BASE CURRENT (AMPS)
0.01
0.001
10
Figure 3. Collector Saturation Region
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 4. Collector−Emitter Saturation Voltage
100
10
IC/IB = 8
IC/IB = 10
10
VCE , VOLTAGE (VOLTS)
VCE , VOLTAGE (VOLTS)
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
TJ = 125°C
1
TJ = -20°C
TJ = 25°C
0.1
0.01
0.001
1
0.01
0.1
IC, COLLECTOR CURRENT (AMPS)
TJ = 125°C
1
TJ = 25°C
0.1
0.01
0.001
10
TJ = -20°C
Figure 5. Collector−Emitter Saturation Voltage
1
0.01
0.1
IC, COLLECTOR CURRENT (AMPS)
Figure 6. Collector−Emitter Saturation Voltage
http://onsemi.com
3
10
BUD42D
TYPICAL STATIC CHARACTERISTICS
10
10
1
IC/IB = 8
VBE , VOLTAGE (VOLTS)
VBE , VOLTAGE (VOLTS)
IC/IB = 5
TJ = -20°C
TJ = 125°C
0.1
0.001
1
TJ = 125°C
TJ = 25°C
1
0.01
0.1
IC, COLLECTOR CURRENT (AMPS)
TJ = -20°C
0.1
0.001
10
Figure 7. Base−Emitter Saturation Region
10
10
FORWARD DIODE VOLTAGE (VOLTS)
IC/IB = 10
VBE , VOLTAGE (VOLTS)
1
0.01
0.1
IC, COLLECTOR CURRENT (AMPS)
Figure 8. Base−Emitter Saturation Region
10
1
TJ = 25°C
TJ = -20°C
TJ = 125°C
0.1
0.001
TJ = 25°C
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
1
VEC(V) = -20°C
VEC(V) = 125°C
0.1
0.01
10
Figure 9. Base−Emitter Saturation Region
VEC(V) = 25°C
0.1
1
REVERSE EMITTER-COLLECTOR CURRENT
Figure 10. Forward Diode Voltage
http://onsemi.com
4
10
BUD42D
TYPICAL SWITCHING CHARACTERISTICS
1000
900
800
100
BVCER (VOLTS)
C, CAPACITANCE (pF)
Cib
TJ = 25°C
f(test) = 1 MHz
Cob
10
ICER = 10 mA
700
600
ICER = 100 mA
lC = 25 mH
500
400
TC = 25°C
1
300
1
10
VR, REVERSE VOLTAGE (VOLTS)
100
10
10000
RBE (W)
Figure 11. Capacitance
Figure 12. BVCER = f(RBE)
800
9
IBon = IBoff
VCC = 300 V
PW = 40 ms
IBon = IBoff
VCC = 300 V
PW = 40 ms
700
600
6
500
t, TIME (ns)
t, TIME (ns)
1000
100
hFE = 10
400
hFE = 5
300
hFE = 5
3
200
TJ = 125°C
TJ = 25°C
100
TJ = 125°C
TJ = 25°C
0
0
0
1
0.5
1.5
IC, COLLECTOR CURRENT (AMPS)
2
0
Figure 13. Resistive Switching, ton
0.5
1
1.5
IC, COLLECTOR CURRENT (AMPS)
2
Figure 14. Resistive Switching, toff
4
4
TJ = 125°C
TJ = 125°C
TJ = 25°C
2
IBon = IBoff
VCE = 15 V
VZ = 300 V
LC = 200 mH
3
t, TIME ( μ s)
IBon = IBoff
VCE = 15 V
VZ = 300 V
LC = 200 mH
3
t, TIME ( μ s)
hFE = 10
TJ = 25°C
2
1
1
0
0
0.5
1
1.5
IC, COLLECTOR CURRENT (AMPS)
2
0.5
Figure 15. Inductive Storage Time,
tsi @ hFE = 5
1.5
1
IC, COLLECTOR CURRENT (AMPS)
Figure 16. Inductive Storage Time,
tsi @ hFE = 10
http://onsemi.com
5
2
BUD42D
TYPICAL SWITCHING CHARACTERISTICS
250
400
IBon = IBoff
VCC = 15 V
VZ = 300 V
LC = 200 mH
TJ = 125°C
TJ = 25°C
300
TJ = 125°C
t, TIME (ns)
t, TIME (ns)
200
tc
200
TJ = 25°C
IBon = IBoff
VCE = 15 V
VZ = 300 V
LC = 200 mH
150
tfi
100
100
0.5
1.5
1
IC, COLLECTOR CURRENT (AMPS)
0
0.5
2
1
1.5
IC, COLLECTOR CURRENT (AMPS)
Figure 17. Inductive Fall and Cross Over Time,
tfi and tc @ hFE = 5
2
Figure 18. Inductive Fall Time,
tfi @ hFE = 10
5
500
4
t, TIME ( m s)
t, TIME (ns)
400
IBon = IBoff
VCC = 15 V
VZ = 300 V
LC = 200 mH
TJ = 125°C
IBon = IBoff
VCC = 15 V
VZ = 300 V
LC = 200 mH
TJ = 125°C
TJ = 25°C
IC = 1 A
3
300
TJ = 25°C
200
0.5
1
1.5
IC, COLLECTOR CURRENT (AMPS)
IC = 0.3 A
2
1
2
3
Figure 19. Inductive Cross Over Time,
tc @ hFE = 10
5
6
7
8
9
hFE, FORCED GAIN
10
11
12
Figure 20. Inductive Storage Time, tsi
300
300
IBon = IBoff
VCC = 15 V
VZ = 300 V
LC = 200 mH
IC = 0.3 A
CROSS-OVER TIME (ns)
t fi , FALL TIME (ns)
4
200
IC = 1 A
IC = 0.3 A
IC = 1 A
200
IBon = IBoff
VCC = 15 V
VZ = 300 V
LC = 200 mH
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
100
100
3
4
5
6
7
hFE, FORCED GAIN
8
9
10
2
Figure 21. Inductive Fall Time, tf
4
6
hFE, FORCED GAIN
8
Figure 22. Inductive Cross Over Time, tc
http://onsemi.com
6
10
BUD42D
TYPICAL SWITCHING CHARACTERISTICS
3
di/dt = 10 A/ms, TC = 25°C
t fr , FORWARD RECOVERY TIME (ns)
t, TIME ( m s)
2.5
440
IB 1 & 2 = 200 mA
IBon = IBoff
VCC = 15 V
VZ = 300 V
LC = 200 mH
500 mA
2
50 mA
100 mA
1.5
1
420
400
380
360
340
320
300
0.5
1.5
1
IC, COLLECTOR CURRENT (AMPS)
0
0
2
0.5
1
1.5
IF, FORWARD CURRENT (AMPS)
Figure 23. Inductive Storage Time, tsi
2
Figure 24. Forward Recovery Time, tfr
10
IC
VCE
90% IC
8
Dyn 1 ms
tfi
tsi
Dyn 3 ms
6
10% IC
10% Vclamp
Vclamp
0V
90% IB
IB
tc
4
1 ms
IB
3 ms
90% IB1
2
0
0
TIME
Figure 25. Dynamic Saturation Voltage
Measurements
2
4
TIME
6
Figure 26. Inductive Switching Measurements
http://onsemi.com
7
8
BUD42D
TYPICAL SWITCHING CHARACTERISTICS
Table 1. Inductive Load Switching Drive Circuit
+15 V
1 mF
150 W
3W
100 W
3W
IC PEAK
100 mF
MTP8P10
VCE PEAK
VCE
MTP8P10
RB1
MPF930
IB1
MUR105
MPF930
+10 V
Iout
IB
A
COMMON
50
W
MJE210
500 mF
IB2
RB2
V(BR)CEO(sus)
L = 10 mH
RB2 = ∞
VCC = 20 Volts
IC(pk) = 100 mA
MTP12N10
150 W
3W
1 mF
-Voff
VFR (1.1 VF) UNLESS
OTHERWISE SPECIFIED
VF
VFRM
tfr
IF
0.1 VF
10% IF
Figure 27. tfr Measurement
http://onsemi.com
8
Inductive Switching
L = 200 mH
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired IB1
RBSOA
L = 500 mH
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired IB1
BUD42D
MAXIMUM RATINGS
5
1 ms
IC , COLLECTOR CURRENT (AMPS)
5 ms
10 ms
1 ms
dc
EXTENDED SOA
IC , COLLECTOR CURRENT (AMPS)
10
1
0.1
0.01
TJ = 125°C
GAIN ≥ 4
LC = 500 mH
4
3
2
VBE(off) = -5 V
1
VBE = 0 V
0
10
100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
300
1000
Figure 28. Forward Bias Safe Operating Area
VBE(off) = -1.5 V
400
500
600
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
700
Figure 29. Reverse Bias Safe Operating Area
POWER DERATING FACTOR
1
SECOND BREAKDOWN
DERATING
0.8
0.6
0.4
0.2
THERMAL DERATING
0
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
140
160
Figure 30. Power Derating
Figure 28 may be found at any case temperature by using the
appropriate curve on Figure 30.
Tj(pk) may be calculated from the data in Figure 31. At any
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown. For inductive loads, high
voltage and current must be sustained simultaneously during
turn−off with the base to emitter junction reverse biased. The
safe level is specified as reverse biased safe operating area
(Figure 29). This rating is verified under clamped conditions
so that the device is never subjected to an avalanche mode.
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC−VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate. The data of Figure 28 is
based on TC = 25°C; Tj(pk) is variable depending on power
level. Second breakdown pulse limits are valid for duty
cycles to 10% but must be derated when TC > 25°C. Second
Breakdown limitations do not derate like thermal
limitations. Allowable current at the voltages shown on
http://onsemi.com
9
BUD42D
1
r(t) TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
RqJC(t) = r(t) RqJC
RqJC = 5°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
0.01
0.01
0.1
1
10
100
1000
t, TIME (ms)
Figure 31. Thermal Response
ORDERING INFORMATION
Package
Shipping†
BUD42D−1G
DPAK
Straight Lead
(Pb−Free)
75 Units / Rail
BUD42DT4G
DPAK
(Pb−Free)
2500 Units / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
IPAK
CASE 369D−01
ISSUE C
SCALE 1:1
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
D
G
DATE 15 DEC 2010
H
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
T
MARKING
DIAGRAMS
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
STYLE 5:
PIN 1. GATE
2. ANODE
3. CATHODE
4. ANODE
STYLE 6:
PIN 1. MT1
2. MT2
3. GATE
4. MT2
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
Discrete
YWW
xxxxxxxx
STYLE 7:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
xxxxxxxxx
A
lL
Y
WW
DOCUMENT NUMBER:
DESCRIPTION:
98AON10528D
Integrated
Circuits
xxxxx
ALYWW
x
= Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
IPAK (DPAK INSERTION MOUNT)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
4
1 2
DATE 21 JUL 2015
3
SCALE 1:1
A
E
b3
C
A
B
c2
4
L3
Z
D
1
L4
2
3
NOTE 7
b2
e
c
SIDE VIEW
b
0.005 (0.13)
TOP VIEW
H
DETAIL A
M
BOTTOM VIEW
C
Z
H
L2
GAUGE
PLANE
C
L
L1
DETAIL A
Z
SEATING
PLANE
BOTTOM VIEW
A1
ALTERNATE
CONSTRUCTIONS
ROTATED 905 CW
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 6:
PIN 1. MT1
2. MT2
3. GATE
4. MT2
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
STYLE 7:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 8:
PIN 1. N/C
2. CATHODE
3. ANODE
4. CATHODE
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
STYLE 9:
STYLE 10:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
3. RESISTOR ADJUST
3. CATHODE
4. CATHODE
4. ANODE
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.028 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.114 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.72
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.90 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
GENERIC
MARKING DIAGRAM*
XXXXXXG
ALYWW
AYWW
XXX
XXXXXG
IC
Discrete
= Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
6.17
0.243
SCALE 3:1
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
XXXXXX
A
L
Y
WW
G
3.00
0.118
1.60
0.063
STYLE 5:
PIN 1. GATE
2. ANODE
3. CATHODE
4. ANODE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON10527D
DPAK (SINGLE GAUGE)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
◊
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative