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CAT93C76B
EEPROM Serial 8-Kb
Microwire
Description
The CAT93C76B is an 8−Kb Microwire Serial EEPROM memory
device which is configured as either registers of 16 bits (ORG pin at
VCC or Not Connected) or 8 bits (ORG pin at GND). Each register can
be written (or read) serially by using the DI (or DO) pin. The
CAT93C76B is manufactured using ON Semiconductor’s advanced
CMOS EEPROM floating gate technology. The device is designed to
endure 1,000,000 program/erase cycles and has a data retention of 100
years. The device is available in 8−pin PDIP, SOIC, TSSOP, MSOP
and 8−pad UDFN packages.
www.onsemi.com
SOIC−8
V SUFFIX
CASE 751BD
UDFN−8
HU4 SUFFIX
CASE 517AZ
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
High Speed Operation: 4 MHz (5 V), 2 MHz (1.8 V)
1.8 V (1.65 V*) to 5.5 V Supply Voltage Range
Selectable x8 or x16 Memory Organization
Self−timed Write Cycle with Auto−clear
Software Write Protection
Power−up Inadvertant Write Protection
Low Power CMOS Technology
1,000,000 Program/Erase Cycles
100 Year Data Retention
Industrial and Extended Temperature Ranges
Sequential Read
8−pin PDIP, SOIC, TSSOP, MSOP and 8−Pad UDFN Packages
This Device is Pb−Free, Halogen Free/BFR Free and RoHS
Compliant†
VCC
ORG
CS
CAT93C76B
DI
DO
SK
GND
PDIP−8
L SUFFIX
CASE 646AA
*CAT93C76Bxx−xxL (TA = −205C to +855C)
†For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
MSOP−8
Z SUFFIX
CASE 846AD
PIN CONFIGURATION
CS
SK
DI
DO
1
VCC
NC
ORG
GND
PDIP (L), SOIC (V),
TSSOP (Y), UDFN (HU4), MSOP (Z)
(Top View)
PIN FUNCTION
Pin Name
Function
CS
Chip Select
SK
Serial Clock Input
DI
Serial Data Input
DO
Serial Data Output
VCC
Power Supply
GND
Ground
ORG
Memory Organization
NC
Figure 1. Functional Symbol
TSSOP−8
Y SUFFIX
CASE 948AL
No Connection
NOTE: When the ORG pin is connected to VCC, the
x16 organization is selected. When it is connected to
ground, the x8 organization is selected. If the ORG pin
is left unconnected, then an internal pull−up device will
select the x16 organization.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
May, 2018 − Rev.1
1
Publication Order Number:
CAT93C76B/D
CAT93C76B
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Temperature Under Bias
Storage Temperature
Voltage on any Pin with Respect to Ground (Note 1)
Ratings
Units
−55 to +125
°C
−65 to +150
°C
−2.0 to +VCC +2.0
V
−2.0 to +7.0
V
VCC with Respect to Ground
Lead Soldering Temperature (10 seconds)
300
°C
Output Short Circuit Current (Note 2)
100
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The minimum DC input voltage is −0.5 V. During transitions, inputs may undershoot to −2.0 V for periods of less than 20 ns. Maximum DC
voltage on output pins is VCC +0.5 V, which may overshoot to VCC +2.0 V for periods of less than 20 ns.
2. Output shorted for no more than one second.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
Reference Test Method
Min
Units
Endurance
Parameter
MIL−STD−883, Test Method 1033
1,000,000
Cycles / Byte
TDR (Note 3)
Data Retention
MIL−STD−883, Test Method 1008
100
Years
VZAP (Note 3)
ESD Susceptibility
MIL−STD−883, Test Method 3015
2,000
V
JEDEC Standard 17
100
mA
NEND (Note 3)
ILTH (Notes 3, 4)
Latch−Up
3. These parameters are tested initially and after a design or process change that affects the parameter.
4. Latch−up protection is provided for stresses up to 100 mA on I/O pins from −1 V to VCC + 1 V.
Table 3. D.C. OPERATING CHARACTERISTICS
(VCC = +1.8 V to +5.5 V, TA = −40°C to +125°C, VCC = +1.65 V to +5.5 V, TA = −20°C to +85°C unless otherwise specified.)
Symbol
Parameter
Test Conditions
ICC1
Supply Current (Write)
Write, VCC = 5.0 V
ICC2
Supply Current (Read)
Read, DO open, fSK = 2 MHz, VCC = 5.0 V
ISB1
Standby Current
(x8 Mode)
VIN = GND or VCC
CS = GND, ORG = GND
ISB2
Standby Current
(x16 Mode)
VIN = GND or VCC
CS = GND,
ORG = Float or VCC
VIN = GND to VCC
ILI
Input Leakage Current
ILO
Output Leakage
Current
VOUT = GND to VCC
CS = GND
Min
Max
Units
2
mA
500
mA
TA = −40°C to +85°C
2
mA
TA = −40°C to +125°C
5
TA = −40°C to +85°C
1
TA = −40°C to +125°C
3
TA = −40°C to +85°C
1
TA = −40°C to +125°C
2
TA = −40°C to +85°C
1
TA = −40°C to +125°C
2
mA
mA
mA
VIL1
Input Low Voltage
4.5 V ≤ VCC < 5.5 V
−0.1
0.8
V
VIH1
Input High Voltage
4.5 V ≤ VCC < 5.5 V
2
VCC + 1
V
VIL2
Input Low Voltage
1.65 V ≤ VCC < 4.5 V
0
VCC x 0.2
V
VIH2
Input High Voltage
1.65 V ≤ VCC < 4.5 V
VCC x 0.7
VCC + 1
V
0.4
V
VOL1
Output Low Voltage
4.5 V ≤ VCC < 5.5 V, IOL = 3 mA
VOH1
Output High Voltage
4.5 V ≤ VCC < 5.5 V, IOH = −400 mA
VOL2
Output Low Voltage
1.65 V ≤ VCC < 4.5 V, IOL = 1 mA
VOH2
Output High Voltage
1.65 V ≤ VCC < 4.5 V, IOH = −100 mA
2.4
V
0.2
VCC − 0.2
V
V
Table 4. PIN CAPACITANCE (Note 3)
Symbol
COUT
CIN
Test
Conditions
Output Capacitance (DO)
Input Capacitance (CS, SK, DI, ORG)
Max
Units
VOUT = 0 V
5
pF
VIN = 0 V
5
pF
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2
Min
Typ
CAT93C76B
Table 5. INSTRUCTION SET (Note 5)
Address
Data
Instruction
Start
Bit
Opcode
x8
x16
READ
1
10
A10−A0
A9−A0
Read Address AN– A0
ERASE
1
11
A10−A0
A9−A0
Clear Address AN– A0
WRITE
1
01
A10−A0
A9−A0
EWEN
1
00
11XXXXXXXXX
11XXXXXXXX
Write Enable
EWDS
1
00
00XXXXXXXXX
00XXXXXXXX
Write Disable
ERAL*
1
00
10XXXXXXXXX
10XXXXXXXX
Clear All Addresses
WRAL*
1
00
01XXXXXXXXX
01XXXXXXXX
x8
x16
D7−D0
Comments
D15−D0
D7−D0
Write Address AN– A0
D15−D0
Write All Addresses
* Not available at VCC < 1.8 V
5. Address bit A10 for the 1,024x8 org. and A9 for the 512x16 org. are “don’t care” bits, but must be kept at either a “1” or “0” for READ, WRITE
and ERASE commands.
Table 6. A.C. CHARACTERISTICS
(VCC = +1.8 V to +5.5 V, TA = −40°C to +125°C, VCC = +1.65 V to +5.5 V, TA = −20°C to +85°C unless otherwise specified.)
VCC < 4.5 V
Symbol
Min
Parameter
Max
VCC > 4.5 V
Min
Max
Units
tCSS
CS Setup Time
50
50
ns
tCSH
CS Hold Time
0
0
ns
tDIS
DI Setup Time
100
50
ns
tDIH
DI Hold Time
100
50
ns
tPD1
Output Delay to 1
0.25
0.1
ms
tPD0
Output Delay to 0
0.25
0.1
ms
Output Delay to High−Z
100
100
ns
5
5
ms
tHZ (Note 6)
tEW
Program/Erase Pulse Width
tCSMIN
Minimum CS Low Time
0.25
0.1
ms
tSKHI
Minimum SK High Time
0.25
0.1
ms
tSKLOW
Minimum SK Low Time
0.25
0.1
ms
tSV
Output Delay to Status Valid
SKMAX
Maximum Clock Frequency
0.25
DC
2000
DC
0.1
ms
4000
kHz
6. This parameter is tested initially and after a design or process change that affects the parameter.
Table 7. POWER−UP TIMING (Notes 6, 7)
Parameter
Symbol
Max
Units
tPUR
Power−up to Read Operation
1
ms
tPUW
Power−up to Write Operation
1
ms
7. tPUR and tPUW are the delays required from the time VCC is stable until the specified operation can be initiated.
Table 8. A.C. TEST CONDITIONS
Input Rise and Fall Times
≤ 50 ns
Input Pulse Voltages
0.4 V to 2.4 V
4.5 V v VCC v 5.5 V
Timing Reference Voltages
0.8 V, 2.0 V
4.5 V v VCC v 5.5 V
Input Pulse Voltages
0.2 VCC to 0.7 VCC
1.65 V v VCC v 4.5 V
Timing Reference Voltages
0.5 VCC
1.65 V v VCC v 4.5 V
Output Load
Current Source IOLmax/IOHmax; CL = 100 pF
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3
CAT93C76B
Device Operation
The CAT93C76B is a 8192−bit nonvolatile memory
intended for use with industry standard microprocessors.
The CAT93C76B can be organized as either registers of 16
bits or 8 bits. When organized as X16, seven 13−bit
instructions control the read, write and erase operations of
the device. When organized as X8, seven 14−bit instructions
control the read, write and erase operations of the device.
The CAT93C76B operates on a single power supply and will
generate on chip, the high voltage required during any write
operation.
Instructions, addresses, and write data are clocked into the
DI pin on the rising edge of the clock (SK). The DO pin is
normally in a high impedance state except when reading data
from the device, or when checking the ready/busy status
after a write operation.
The ready/busy status can be determined after the start of
a write operation by selecting the device (CS high) and
polling the DO pin; DO low indicates that the write
operation is not completed, while DO high indicates that the
device is ready for the next instruction. If necessary, the DO
pin may be placed back into a high impedance state during
chip select by shifting a dummy “1” into the DI pin. The DO
pin will enter the high impedance state on the falling edge of
the clock (SK). Placing the DO pin into the high impedance
state is recommended in applications where the DI pin and
the DO pin are to be tied together to form a common DI/O
pin.
The format for all instructions sent to the device is a
logical “1” start bit, a 2−bit (or 4−bit) opcode, 10−bit address
(an additional bit when organized X8) and for write
operations a 16−bit data field (8−bit for X8 organizations).
The most significant bit of the address is “don’t care” but it
must be present.
tSKHI
Read
Upon receiving a READ command and an address
(clocked into the DI pin), the DO pin of the CAT93C76B will
come out of the high impedance state and, after sending an
initial dummy zero bit, will begin shifting out the data
addressed (MSB first). The output data bits will toggle on
the rising edge of the SK clock and are stable after the
specified time delay (tPD0 or tPD1).
For the CAT93C76B, after the initial data word has been
shifted out and CS remains asserted with the SK clock
continuing to toggle, the device will automatically
increment to the next address and shift out the next data word
in a sequential READ mode. As long as CS is continuously
asserted and SK continues to toggle, the device will keep
incrementing to the next address automatically until it
reaches the end of the address space, then loops back to
address 0. In the sequential READ mode, only the initial data
word is preceeded by a dummy zero bit. All subsequent data
words will follow without a dummy zero bit.
Write
After receiving a WRITE command, address and the data,
the CS (Chip Select) pin must be deselected for a minimum
of tCSMIN. The falling edge of CS will start the self clocking
clear and data store cycle of the memory location specified
in the instruction. The clocking of the SK pin is not
necessary after the device has entered the self clocking
mode. The ready/busy status of the CAT93C76B can be
determined by selecting the device and polling the DO pin.
Since this device features Auto−Clear before write, it is
NOT necessary to erase a memory location before it is
written into.
tSKLOW
tCSH
SK
tDIH
tDIS
VALID
VALID
DI
tCSS
CS
tDIS
tPD0, tPD1
DO
DATA VALID
Figure 2. Synchronous Data Timing
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4
tCSMN
CAT93C76B
SK
CS
AN
DI
1
1
AN−1
Don’t Care
A0
0
HIGH−Z
DO
Dummy 0
D15 . . . D0
or
D7 . . . D0
Address + 1
D15 . . . D0
or
D7 . . . D0
Address + 2
D15 . . . D0
or
D7 . . . D0
Address + n
D15 . . .
or
D7 . . .
Figure 3. READ Instruction Timing
SK
tCSMIN
CS
STATUS
VERIFY
AN
DI
1
0
AN−1
A0
DN
D0
1
tSV
DO
STANDBY
BUSY
HIGH−Z
READY
tEW
Figure 4. WRITE Instruction Timing
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5
tHZ
HIGH−Z
CAT93C76B
Erase
determined by selecting the device and polling the DO pin.
Once cleared, the contents of all memory bits return to a
logical “1” state.
Upon receiving an ERASE command and address, the CS
(Chip Select) pin must be deasserted for a minimum of
tCSMIN. The falling edge of CS will start the self clocking
clear cycle of the selected memory location. The clocking of
the SK pin is not necessary after the device has entered the
self clocking mode. The ready/busy status of the
CAT93C76B can be determined by selecting the device and
polling the DO pin. Once cleared, the content of a cleared
location returns to a logical “1” state.
Write All
Upon receiving a WRAL command and data, the CS
(Chip Select) pin must be deselected for a minimum of
tCSMIN. The falling edge of CS will start the self clocking
data write to all memory locations in the device. The
clocking of the SK pin is not necessary after the device has
entered the self clocking mode. The ready/busy status of the
CAT93C76B can be determined by selecting the device and
polling the DO pin. It is not necessary for all memory
locations to be cleared before the WRAL command is
executed.
Note 1: After the last data bit has been sampled, Chip Select
(CS) must be brought Low before the next rising edge of the
clock (SK) in order to start the self−timed high voltage cycle.
This is important because if CS is brought low before or after
this specific frame window, the addressed location will not
be programmed or erased.
Erase/Write Enable and Disable
The CAT93C76B powers up in the write disable state.
Any writing after power−up or after an EWDS (write
disable) instruction must first be preceded by the EWEN
(write enable) instruction. Once the write instruction is
enabled, it will remain enabled until power to the device is
removed, or the EWDS instruction is sent. The EWDS
instruction can be used to disable all CAT93C76B write and
clear instructions, and will prevent any accidental writing or
clearing of the device. Data can be read normally from the
device regardless of the write enable/disable status.
Power−On Reset (POR)
Erase All
The CAT93C76B incorporates Power−On Reset (POR)
circuitry which protects the device against malfunctioning
while VCC is lower than the recommended operating
voltage.
The device will power up into a read−only state and will
power−down into a reset state when VCC crosses the POR
level of ~1.3 V.
Upon receiving an ERAL command, the CS (Chip Select)
pin must be deselected for a minimum of tCSMIN. The falling
edge of CS will start the self clocking clear cycle of all
memory locations in the device. The clocking of the SK pin
is not necessary after the device has entered the self clocking
mode. The ready/busy status of the CAT93C76B can be
SK
CS
STATUS VERIFY
AN
DI
1
1
AN−1
tCS
A0
1
tSV
DO
STANDBY
HIGH−Z
tHZ
BUSY
tEW
Figure 5. ERASE Instruction Timing
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6
READY
HIGH−Z
CAT93C76B
SK
STANDBY
CS
DI
1
0
0
*
* ENABLE = 11
DISABLE = 00
Figure 6. EWEN/EWDS Instruction Timing
SK
CS
STATUS VERIFY
STANDBY
tCS
DI
1
0
1
0
0
tSV
tHZ
HIGH−Z
DO
BUSY
READY
HIGH−Z
tEW
Figure 7. ERAL Instruction Timing
SK
CS
STATUS VERIFY
STANDBY
tCSMIN
DI
1
0
0
0
1
DN
D0
tSV
tHZ
BUSY
DO
tEW
Figure 8. WRAL Instruction Timing
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7
READY
HIGH−Z
CAT93C76B
ORDERING INFORMATION
Device Order Number
Specific
Device
Marking
Package Type
Temperature Range
CAT93C76BLI−G
93C76D
PDIP−8
CAT93C76BVI−GT3
93C76D
CAT93C76BVI−G
Lead
Finish
Shipping
I = Industrial
(−40°C to +85°C)
NiPdAu
Tube, 50 Units / Tube
SOIC−8, JEDEC
I = Industrial
(−40°C to +85°C)
NiPdAu
Tape & Reel,
3,000 Units / Reel
93C76D
SOIC−8, JEDEC
I = Industrial
(−40°C to +85°C)
NiPdAu
Tube, 100 Units / Tube
CAT93C76BVI−GT3L
93C76D
SOIC−8, JEDEC
I = Industrial
(−20°C to +85°C)
NiPdAu
Tape & Reel,
3,000 Units / Reel
CAT93C76BVE−GT3
93C76D
SOIC−8, JEDEC
E = Extended
(−40°C to +125°C)
NiPdAu
Tape & Reel,
3,000 Units / Reel
CAT93C76BYI−GT3
M76D
TSSOP−8
I = Industrial
(−40°C to +85°C)
NiPdAu
Tape & Reel,
3,000 Units / Reel
CAT93C76BYI−G
M76D
TSSOP−8
I = Industrial
(−40°C to +85°C)
NiPdAu
Tube, 100 Units / Tube
CAT93C76BYI−GT3L
M76D
TSSOP−8
I = Industrial
(−20°C to +85°C)
NiPdAu
Tape & Reel,
3,000 Units / Reel
CAT93C76BYE−GT3
M76D
TSSOP−8
E = Extended
(−40°C to +125°C)
NiPdAu
Tape & Reel,
3,000 Units / Reel
CAT93C76BHU4I−GT3
M3U
UDFN−8
I = Industrial
(−40°C to +85°C)
NiPdAu
Tape & Reel,
3,000 Units / Reel
CAT93C76BZI−GT3
M3YM
MSOP−8
I = Industrial
(−40°C to +85°C)
NiPdAu
Tape & Reel,
3,000 Units / Reel
8. All packages are RoHS−compliant (Lead−free, Halogen−free).
9. The standard lead finish is NiPdAu.
10. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
11. For additional package and temperature options, please contact your nearest ON Semiconductor sales office.
12. For detailed information and a breakdown of device nomenclature and numbering systems, please see the ON Semiconductor Device
Nomenclature document, TND310/D, available at www.onsemi.com
www.onsemi.com
8
CAT93C76B
PACKAGE DIMENSIONS
PDIP−8, 300 mils
CASE 646AA−01
ISSUE A
SYMBOL
MIN
NOM
A
E1
5.33
A1
0.38
A2
2.92
3.30
4.95
b
0.36
0.46
0.56
b2
1.14
1.52
1.78
c
0.20
0.25
0.36
D
9.02
9.27
10.16
E
7.62
7.87
8.25
E1
6.10
6.35
7.11
e
PIN # 1
IDENTIFICATION
MAX
2.54 BSC
eB
7.87
L
2.92
10.92
3.30
3.80
D
TOP VIEW
E
A2
A
A1
c
b2
L
e
eB
b
SIDE VIEW
END VIEW
Notes:
(1) All dimensions are in millimeters.
(2) Complies with JEDEC MS-001.
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9
CAT93C76B
PACKAGE DIMENSIONS
SOIC 8, 150 mils
CASE 751BD−01
ISSUE O
E1
E
SYMBOL
MIN
A
1.35
1.75
A1
0.10
0.25
b
0.33
0.51
c
0.19
0.25
D
4.80
5.00
E
5.80
6.20
E1
3.80
4.00
MAX
1.27 BSC
e
PIN # 1
IDENTIFICATION
NOM
h
0.25
0.50
L
0.40
1.27
θ
0º
8º
TOP VIEW
D
h
A1
θ
A
c
e
b
L
SIDE VIEW
END VIEW
Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with JEDEC MS-012.
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10
CAT93C76B
PACKAGE DIMENSIONS
TSSOP8, 4.4x3
CASE 948AL−01
ISSUE O
b
SYMBOL
MIN
NOM
A
E1
E
MAX
1.20
A1
0.05
A2
0.80
b
0.19
0.30
c
0.09
0.20
D
2.90
3.00
3.10
E
6.30
6.40
6.50
E1
4.30
4.40
4.50
0.15
0.90
e
0.65 BSC
L
1.00 REF
L1
0.50
θ
0º
0.60
1.05
0.75
8º
e
TOP VIEW
D
A2
c
q1
A
A1
L1
SIDE VIEW
L
END VIEW
Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with JEDEC MO-153.
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11
CAT93C76B
PACKAGE DIMENSIONS
UDFN8, 2x3 EXTENDED PAD
CASE 517AZ−01
ISSUE O
D
b
A
e
L
DAP SIZE 1.8 x 1.8
E2
E
PIN #1
IDENTIFICATION
A1
PIN #1 INDEX AREA
D2
TOP VIEW
SIDE VIEW
SYMBOL
MIN
NOM
MAX
A
0.45
0.50
0.55
A1
0.00
0.02
0.05
A3
b
0.127 REF
0.20
0.25
0.30
D
1.95
2.00
2.05
D2
1.35
1.40
1.45
E
2.95
3.00
3.05
E2
1.25
1.30
1.35
e
L
BOTTOM VIEW
DETAIL A
0.065 REF
A3 A
FRONT VIEW
0.50 REF
0.25
0.30
0.35
A3
Notes:
(1) All dimensions are in millimeters.
(2) Refer JEDEC MO-236/MO-252.
0.0 - 0.05
DETAIL A
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12
0.065 REF
Copper Exposed
CAT93C76B
PACKAGE DIMENSIONS
MSOP 8, 3x3
CASE 846AD−01
ISSUE O
MIN
NOM
A1
0.05
0.10
0.15
A2
0.75
0.85
0.95
b
0.22
0.38
c
0.13
0.23
D
2.90
3.00
3.10
E
4.80
4.90
5.00
E1
2.90
3.00
3.10
SYMBOL
MAX
1.10
A
E
E1
0.65 BSC
e
L
0.60
0.40
0.80
L1
0.95 REF
L2
0.25 BSC
θ
0º
6º
TOP VIEW
D
A
A2
A1
DETAIL A
e
b
c
SIDE VIEW
END VIEW
q
L2
Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with JEDEC MO-187.
L
L1
DETAIL A
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13
CAT93C76B
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