CM1621-06DE

CM1621 LCD and Camera EMI Filter Array with ESD Protection Features • Six Channels of EMI Filtering with Integrated ESD Protection • Pi−Style EMI Filters in a Capacitor−Resistor−Capacitor (C−R−C) http://onsemi.com Network • ±15 kV ESD Protection on Each Channel • • • • 12 (IEC 61000−4−2 Level 4, Contact Discharge) ±30 kV ESD Protection on Each Channel (HBM) Greater than 40 dB Attenuation (Typical) at 1 GHz uDFN Package with 0.40 mm Lead Pitch: • 12−Lead: 2.50 mm x 1.20 mm x 0.50 mm These Devices are Pb−Free and are RoHS Compliant 1 UDFN12 DE SUFFIX CASE 517AE MARKING DIAGRAM Applications P21 M G • LCD and Camera Data Lines in Mobile Handsets • I/O Port Protection for Mobile Handsets, Notebook Computers, • • • PDAs, etc. EMI Filtering for Data Ports in Cell Phones, PDAs or Notebook Computers Wireless Handsets Handheld PCs/PDAs BLOCK DIAGRAM 100 W FILTER+ESDn* R C 17 pF FILTER+ESDn* 17 pF 1 P21 M G = CM1621−06DE = Month Code = Pb−Free Package ORDERING INFORMATION Device Package Shipping† CM1621−06DE uDFN−12 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. C GND 1 of 6 EMI / RFI + ESD Channels *See Package/Pinout Diagrams for expanded pin information. © Semiconductor Components Industries, LLC, 2011 April, 2011 − Rev. 3 1 Publication Order Number: CM1621/D CM1621 PACKAGE / PINOUT DIAGRAMS Pin 1 Marking Top View (Pins Down View) Bottom View (Pins Up View) 14 13 12 11 10 9 1 2 3 4 5 6 P21 GND PAD 1 2 3 4 5 6 14 13 12 11 10 9 12−Lead UDFN Package Table 1. PIN DESCRIPTIONS Device Pin(s) Name 1 FILTER1 2 FILTER2 3 Description Device Pin(s) Name Description Filter + ESD Channel 1 12 FILTER1 Filter + ESD Channel 1 Filter + ESD Channel 2 11 FILTER2 Filter + ESD Channel 2 FILTER3 Filter + ESD Channel 3 10 FILTER3 Filter + ESD Channel 3 4 FILTER4 Filter + ESD Channel 4 9 FILTER4 Filter + ESD Channel 4 5 FILTER5 Filter + ESD Channel 5 8 FILTER5 Filter + ESD Channel 5 6 FILTER6 Filter + ESD Channel 6 7 FILTER6 Filter + ESD Channel 6 GND PAD GND Device Ground SPECIFICATIONS Table 2. ABSOLUTE MAXIMUM RATINGS Parameter Rating Storage Temperature Range Units −65 to +150 °C DC Power per Resistor 100 mW DC Package Power Rating 500 mW Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Table 3. STANDARD OPERATING CONDITIONS Parameter Operating Temperature Range http://onsemi.com 2 Rating Units −40 to +85 °C CM1621 Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1) Symbol R CTOTAL Parameter Conditions Resistance Min Typ Max Units 85 100 115 W 27 34 41 pF Total Channel Capacitance At 2.5 VDC Reverse Bias, 1 MHz, 30 mVAC Capacitance C At 2.5 VDC Reverse Bias, 1 MHz, 30 mVAC 17 pF Standoff Voltage IDIODE = 10 mA 6.0 V ILEAK Diode Leakage Current (reverse bias) VDIODE = +3.3 V VSIG Signal Clamp Voltage ILOAD = 1.0 mA VESD In−system ESD Withstand Voltage a) Human Body Model (HBM), MIL−STD−883, Method 3015 b) Contact Discharge per IEC 61000−4−2 Level 4 (Note 2) C VDIODE RDYN fC A1GHz A800MHz − 3 GHz 6.0 7.0 100 nA 8.0 V kV ±30 ±15 Dynamic Resistance Positive Negative W 2.3 0.9 Cut−off Frequency ZSOURCE = 50 W, ZLOAD = 50 W Channel R = 100 W, Channel C = 15 pF 90 Absolute Attenuation at 1 GHz from 0 dB Level ZSOURCE = 50 W, ZLOAD = 50 W, DC Bias = 0 V; (Notes 1 and 3) −40 dB Absolute Attenuation at 800 MHz to 3 Ghz from 0 dB Level ZSOURCE = 50 W, ZLOAD = 50 W, DC Bias = 0 V; (Notes 1 and 3) −35 dB 1. TA = 25°C unless otherwise specified. 2. ESD applied to input and output pins with respect to GND, one at a time. 3. Attenuation / RF curves characterized by a network analyzer using microprobes. http://onsemi.com 3 135 (Note 3) MHz CM1621 PERFORMANCE INFORMATION Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment) Figure 1. Insertion Loss vs. Frequency (FILTER1 Input to GND, CM1621−06DE) Typical Diode Capacitance vs. Input Voltage Figure 2. Insertion Loss vs. Frequency (FILTER2 Input to GND, CM1621−06DE) Typical Diode Capacitance vs. Input Voltage http://onsemi.com 4 CM1621 PERFORMANCE INFORMATION (Cont’d) Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment) Figure 3. Insertion Loss vs. Frequency (FILTER3 Input to GND, CM1621−06DE) Typical Diode Capacitance vs. Input Voltage Figure 4. Insertion Loss vs. Frequency (FILTER4 Input to GND, CM1621−06DE) Typical Diode Capacitance vs. Input Voltage http://onsemi.com 5 CM1621 PERFORMANCE INFORMATION (Cont’d) Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment) Figure 5. Insertion Loss vs. Frequency (FILTER5 Input to GND, CM1621−06DE) Typical Diode Capacitance vs. Input Voltage Figure 6. Insertion Loss vs. Frequency (FILTER6 Input to GND, CM1621−06DE) Typical Diode Capacitance vs. Input Voltage http://onsemi.com 6 CM1621 Capacitance (Normalized) PERFORMANCE INFORMATION (Cont’d) DC Voltage Figure 7. Filter Capacitance vs. Input Voltage (normalized to capacitance at 2.5 VDC and 255C) http://onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS UDFN12 2.5x1.2, 0.4P CASE 517AE ISSUE C 12 1 DATE 23 OCT 2012 SCALE 4:1 0.15 C PIN ONE REFERENCE 2X A3 A B D 2X ÉÉÉ ÉÉÉ NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. ÇÇ ÉÉ E A1 DETAIL B OPTIONAL CONSTRUCTION 0.15 C TOP VIEW (A3) DETAIL B A 0.10 C 12X SEATING PLANE 0.08 C SIDE VIEW C A1 L1 D2 DETAIL A 12X L 1 e (0.10) E2 MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.00 0.03 0.05 0.127 REF 0.15 0.20 0.25 2.50 BSC 1.70 1.80 1.90 1.20 BSC 0.20 0.30 0.40 0.40 BSC 0.20 TYP 0.20 0.25 0.30 −−− −−− 0.10 GENERIC MARKING DIAGRAM* 10X 6 L DIM A A1 A3 b D D2 E E2 e K L L1 XXXM G DETAIL A OPTIONAL CONSTRUCTION 12X K 12 7 12X b XXX M G 0.10 C A B BOTTOM VIEW 0.05 C 1 NOTE 3 = Specific Device Code = Month Code = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. SOLDERING FOOTPRINT* 1.50 0.35 0.40 1.90 11X 0.25 0.40 PITCH 12 X 0.45 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON22155D UDFN12 2.5X1.2, 0.4P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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