CPH3356-TL-W

CPH3356 Power MOSFET –20V, 137mΩ, –2.5A, Single P-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This devices is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 1.8V drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS compliance www.onsemi.com VDSS RDS(on) Max 137mΩ@ −4.5V ID Max −20V 203mΩ@ −2.5V −2.5A 323mΩ@ −1.8V Typical Applications • Load Switch • Motor Driver ELECTRICAL CONNECTION P-Channel SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1) Symbol Value Unit Drain to Source Voltage VDSS −20 V Gate to Source Voltage VGSS ±10 V Drain Current (DC) ID −2.5 A Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP −10 A Power Dissipation When mounted on ceramic substrate 2 (900mm × 0.8mm) PD 1 W Junction Temperature Tj 150 °C 1 1 : Gate 2 : Source 3 : Drain 2 PACKING TYPE : TL WN Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING LOT No. Parameter 3 TL THERMAL RESISTANCE RATINGS Parameter Junction to Ambient When mounted on ceramic substrate 2 (900mm × 0.8mm) Symbol RθJA © Semiconductor Components Industries, LLC, 2015 April 2015 - Rev. 2 Value Unit 125 1 °C/W ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Publication Order Number : CPH3356/D CPH3356 ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2) Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS VGS(th) gFS Gate Threshold Voltage Forward Transconductance Conditions Value min ID=−1mA, VGS=0V VDS=−20V, VGS=0V VGS=±8V, VDS=0V −20 VDS=−10V, ID=−1mA −0.4 typ max Unit V −1 μA ±10 μA −1.4 V VDS=−10V, ID=−1A 2.7 RDS(on)1 RDS(on)2 ID=−1A, VGS=−4.5V 105 137 mΩ ID=−0.5A, VGS=−2.5V 145 203 mΩ RDS(on)3 Ciss ID=−0.1A, VGS=−1.8V 215 323 mΩ Output Capacitance Coss VDS=−10V, f=1MHz 60 pF Reverse Transfer Capacitance Crss 45 pF Turn-ON Delay Time Static Drain to Source On-State Resistance Input Capacitance 250 S pF td(on) 5.7 ns Rise Time tr 11 ns Turn-OFF Delay Time td(off) 34 ns Fall Time tf 20 ns Total Gate Charge Qg 3.3 nC Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd See specified Test Circuit VDS=−10V, VGS=−4.5V, ID=−2.5A 0.65 nC 0.72 nC VSD Forward Diode Voltage IS=−2.5A, VGS=0V −0.87 −1.5 V Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 0V --4.5V VIN VDD= --10V ID= --1A RL=10Ω VIN D PW=10μs D.C.≤1% VOUT G P.G CPH3356 50Ω S www.onsemi.com 2 CPH3356 www.onsemi.com 3 CPH3356 www.onsemi.com 4 CPH3356 PACKAGE DIMENSIONS unit : mm CPH3 CASE 318BA ISSUE O Recommended Soldering Footprint 1 : Gate 2 : Source 0.6 2.4 1.4 3 : Drain 0.95 0.95 ORDERING INFORMATION Device Marking Package Shipping (Qty / Packing) WN CPH3 SC-59, SOT-23, TO-236 (Pb-Free / Halogen Free) 3,000 / Tape & Reel CPH3356-TL-H CPH3356-TL-W † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the CPH3356 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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