CPH5520-TL-E

Ordering number : ENA0485A CPH5520 Bipolar Transistor http://onsemi.com (–)50V, (–)5A, Low VCE(sat) Complementary Dual CPH5 Applications • Relay drivers, lamp drivers, motor drivers, gate drivers Features • • Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density mounting Ultrasmall package facilitate miniaturization in end products. (0.9mm mounting height) Specifications ( ): PNP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage Unit (--50)80 V (--50)50 V VEBO IC Collector Current Collector Current (Pulse) ICP IB PC Base Current Collector Dissipation Total Power Dissipation (--)6 V (--)2 A (--)5 Junction Temperature PT Tj Storage Temperature Tstg A (--)400 mA Mounted on a ceramic board (600mm2×0.8mm) 1unit 0.9 W Mounted on a ceramic board (600mm2×0.8mm) 1.2 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Product & Package Information unit : mm (typ) 7017A-009 • Package : CPH5 • JEITA, JEDEC : SC-74A, SOT-25 • Minimum Packing Quantity : 3,000 pcs./reel 5 4 CPH5520-TL-E 0.15 2.9 3 Packing Type : TL Marking LOT No. EW 0.05 1.6 2.8 0.2 0.6 Package Dimensions 0.9 0.2 0.6 TL 1 2 0.95 0.4 1 : Collector (NPN TR) 2 : Collector (PNP TR) 3 : Base (PNP TR) 4 : Emitter Common 5 : Base (NPN TR) Electrical Connection 5 4 3 CPH5 1 Semiconductor Components Industries, LLC, 2013 September, 2013 2 53012 TKIM TC-00002774/30707EA TIIM TC-00000534 No. A0485-1/8 CPH5520 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Conditions ICBO IEBO VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A Gain-Bandwidth Product hFE fT VCE=(--)2V, IC=(--)100mA VCE=(--)10V, IC=(--)300mA Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) VCB=(--)10V, f=1MHz IC=(--)1A, IB=(--)50mA Emitter Cutoff Current DC Current Gain Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time V(BR)CBO V(BR)CEO Ratings min typ 200 Unit max (--)1 μA (--)1 μA 560 420 MHz (16)8 IC=(--)1A, IB=(--)50mA IC=(--)10μA, IE=0A IC=(--)1mA, RBE=∞ (--330)260 (--)0.9 (--)1.2 (--50)80 V(BR)EBO ton IE=(--)10μA, IC=0A tstg tf See specified Test Circuit. pF (--165)130 mV V V (--50)50 V (--)6 V (35)35 ns (200)330 ns (24)40 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT OUTPUT IB2 VR RB RL 50Ω + 100μF VBE= --5V + 470μF VCC=25V IC=10IB1= --10IB2=0.7A For PNP, the polarity is reversed. Ordering Information Device CPH5520-TL-E Package Shipping memo CPH5 3,000pcs./reel Pb Free No. A0485-2/8 CPH5520 A --1 mA mA --60 --40 IC -- VCE 2.0 1.8 A --20m --1.6 --1.4 --1.0 --10mA --8mA --6mA --0.8 --4mA --1.2 Collector Current, IC -- A Collector Current, IC -- A mA --80m 00 --1.8 [PNP] 50m A IC -- VCE --2.0 --0.6 --2mA IB=0mA 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 Collector-to-Emitter Voltage, VCE -- V IC -- VBE --2.00 15mA 1.4 10mA 8mA 6mA 1.2 1.0 4mA 0.8 0.6 2mA IB=0mA 0 0 --2.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IC -- VBE [PNP] 2.00 2.0 1.8 Collector-to-Emitter Voltage, VCE -- V IT08923 IT08924 [NPN] VCE=2V VCE= --2V 1.75 --1.50 1.50 --0.75 --25°C °C --1.00 25°C --1.25 --0.50 --0.25 1.25 Ta= 75°C 25°C --25°C Collector Current, IC -- A --1.75 Ta=7 5 Collector Current, IC -- A 20mA 1.6 0.2 --0.2 1.00 0.75 0.50 0.25 0 0 0 --0.2 --0.4 --0.6 --0.8 Base-to-Emitter Voltage, VBE -- V hFE -- IC 7 0 --1.0 0.6 0.8 [NPN] VCE=2V 5 2 --25°C Ta=75°C DC Current Gain, hFE 25°C 1.0 IT08926 hFE -- IC 7 Ta=75°C 100 7 5 25°C 3 --25°C 2 100 7 3 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 5 0.01 3 Gain-Bandwidth Product, f T -- MHz 100 2 3 5 Collector Current, IC -- A 7 --1.0 2 2 3 5 3 IT08929 7 1.0 2 3 IT08928 [NPN] VCE=10V 5 2 7 --0.1 7 0.1 f T -- IC 7 3 5 5 Collector Current, IC -- A VCE= --10V 3 3 [PNP] 5 2 2 IT08927 f T -- IC 7 7 --0.01 0.4 Base-to-Emitter Voltage, VBE -- V VCE= --2V 3 2 --0.01 0.2 IT08925 [PNP] 5 DC Current Gain, hFE 30mA 0.4 --0.4 Gain-Bandwidth Product, f T -- MHz A m 40 [NPN] 3 2 100 7 5 3 2 10 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 7 0.1 2 3 IT08930 No. A0485-3/8 CPH5520 Cob -- VCB 7 [PNP] Cob -- VCB 5 [NPN] f=1MHz f=1MHz Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 5 3 2 10 7 5 3 2 10 7 5 3 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC 5 3 5 7 0.1 3 5 7 1.0 2 3 5 7 10 2 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC [PNP] 5 3 5 7 IT08932 [NPN] IC / IB=10 IC / IB=10 3 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 IT08931 2 --0.1 7 C 5° =7 5 Ta 5 --2 3 °C °C 25 2 2 0.1 7 5 °C 75 5°C --2 5°C 3 = Ta 2 2 0.01 7 5 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A --1.0 3 0.01 3 2 3 VCE(sat) -- IC 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A IT08933 [PNP] 5 IC / IB=20 2 3 IT008934 VCE(sat) -- IC [NPN] IC / IB=20 3 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 7 2 3 2 --0.1 C 75° Ta= 5°C --2 C 25° 7 5 3 2 2 0.1 7 °C 75 C 5° --2 5°C 5 = Ta 3 2 2 0.01 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 7 0.01 3 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A IT08935 VBE(sat) -- IC 3 2 VBE(sat) -- IC [PNP] 3 2 --1.0 Ta= --25°C 7 75°C 25°C 5 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 [NPN] IC / IB=20 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V IC / IB=20 2 IT08936 3 IT08937 2 1.0 Ta= --25°C 7 75°C 25°C 5 3 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 7 1.0 2 3 IT08938 No. A0485-4/8 CPH5520 1ms IC=2A 1.0 7 5 3 2 0.1 7 5 3 2 Ta=25°C Single pulse For PNP minus sign is omitted Mounted on a ceramic board (600mm2✕0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector-to-Emitter Voltage, VCE -- V [PNP / NPN] Mounted on a ceramic board (600mm2✕0.8mm) 1.2 s m 10 s on 0m ati 10 per o DC Collector Current, IC -- A 1.4 μs 100 s 2 ICP=5A PC -- Ta [PNP / NPN] 0μ 50 3 ASO Collector Dissipation, PC -- W 7 5 1.0 0.9 0.8 To t 0.6 1u al di nit ss ip ati on 0.4 0.2 2 3 5 7 IT11358 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT11359 No. A0485-5/8 CPH5520 Embossed Taping Specification CPH5520-TL-E No. A0485-6/8 CPH5520 Outline Drawing CPH5520-TL-E Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No. A0485-7/8 CPH5520 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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