CPH5905H-TL-E

Ordering number : EN7177B CPH5905 N-Channel JFET and NPN Bipolar Transistor 15V, 10 to 32mA, 50V, 150mA, Composite type, CPH5 http://onsemi.com Features Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting efficiency greatly The CPH5905 contains a 2SK3357-equivalent chip and a 2SC4639-equivalent chip in one package Drain and emitter are shared • • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [FET] Drain-to-Source Voltage VDSX VGDS Gate-to-Drain Voltage Gate Current Drain Current IG ID Allowable Power Dissipation PD 15 Mounted on a ceramic board (600mm2×0.8mm) V --15 V 10 mA 50 mA 350 mW [TR] Collector-to-Base Voltage VCBO VCEO VEBO Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) V 150 IB PC Collector Dissipation V V 6 IC ICP Base Current 55 50 mA 300 mA 30 mA Mounted on a ceramic board (600mm2×0.8mm) 350 mW Mounted on a ceramic board (600mm2×0.8mm) 500 mW [TR] Total Power Dissipation Junction Temperature PT Tj Storage Temperature Tstg 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Product & Package Information unit : mm (typ) 7017A-007 • Package : CPH5 • JEITA, JEDEC : SC-74A, SOT-25 • Minimum Packing Quantity : 3,000 pcs./reel 3 Packing Type : TL Marking 1E 1.6 2.8 0.05 0.9 0.2 0.6 TL 1 0.95 2 0.4 1 : Collector 2 : Gate 3 : Source 4 : Emitter/Drain 5 : Base LOT No. 4 RANK 5 CPH5905G-TL-E CPH5905H-TL-E 0.15 2.9 0.2 0.6 Package Dimensions Electrical Connection 5 4 3 CPH5 1 Semiconductor Components Industries, LLC, 2013 August, 2013 2 60612 TKIM/62005AC MSIM TB-00001552/22802 TSIM TA-49 No.7177-1/8 CPH5905 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ max Unit [FET] Gate-to-Drain Breakdown Voltage V(BR)GDS IGSS VGS(off) Gate Cutoff Current Cutoff Voltage Drain Current IG=--10μA, VGS=0V VGS=--10V, VDS=0V --15 V --1.0 VDS=5V, ID=100μA VDS=5V, VGS=0V VDS=5V, VGS=0V, f=1kHz --0.4 --0.7 10.0* nA --1.5 V 32.0* mA Forward Transfer Admittance IDSS | yfs | Input Capacitance Ciss Reverse Transfer Capacitance Crss VDS=5V, VGS=0V, f=1kHz VDS=5V, VGS=0V, f=1kHzz Noise Figure NF VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz ICBO IEBO VCB=35V, IE=0A 0.1 μA VEB=4V, IC=0A 0.1 μA VCE=6V, IC=1mA Gain-Bandwidth Product hFE fT VCE=6V, IC=10mA 200 Output Capacitance Cob 1.7 Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) VCB=6V, f=1MHz IC=50mA, IB=5mA 24 35 mS 10.0 pF 2.9 pF 1.0 dB [TR] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time 135 IC=50mA, IB=5mA 400 MHz pF 0.08 0.4 mV 0.8 1.0 V V(BR)CBO V(BR)CEO IC=10μA, IE=0A 55 V IC=1mA, RBE=∞ 50 V V(BR)EBO ton IE=10μA, IC=0A 6 tstg tf See specified Test Circuit. V 0.15 ns 0.75 ns 0.20 ns * : The CPH5905 is classified by IDSS as follows : (unit : mA) Rank IDSS G 10.0 to 20.0 H 16.0 to 32.0 The specifications shown above are for each individual FET or transistor. Switching Time Test Circuit IB1 PC=20μs D.C.≤1% OUTPUT IB2 INPUT 1kΩ RL 2kΩ VR 50Ω + 220μF VBE= --5V + 470μF VCC=20V 10IB1= --10IB2=IC=10mA Ordering Information Package Shipping CPH5905G-TL-E Device CPH5 3,000pcs./reel CPH5905H-TL-E CPH5 3,000pcs./reel memo Pb Free No.7177-2/8 CPH5905 ID -- VDS 20 [FET] ID -- VDS 20 [FET] VGS=0V 16 V V GS=0 12 Drain Current, ID -- mA Drain Current, ID -- mA 16 --0.1V --0.2V 8 --0.3V 4 --0.2V 8 --0.3V --0.4V 4 --0.4V --0.5V --0.6V --0.7V --0.1V 12 --0.5V --0.6V --0.7V 0 0 0.4 0 0.8 1.2 1.6 2.0 Drain-to-Source Voltage, VDS -- V 2.4 ID -- VGS 22 0 4 6 8 10 Drain-to-Source Voltage, VDS -- V 12 ITR02750 ID -- VGS [FET] 16 VDS=5V 20 2 ITR02749 [FET] VDS=5V IDSS=15mA 14 6 4 25 6 8 75° C 8 10 --2 5°C 10 20 m 15 A mA 10 mA S =3 0m 12 Ta = A 14 12 °C Drain Current, ID -- mA 16 ID S Drain Current, ID -- mA 18 4 2 2 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 Gate-to-Source Voltage, VGS -- V Forward Transfer Admittance, | yfs | -- mS A 30m mA =15 I DSS 3 2 10 7 5 3 --0.8 --0.6 --0.4 --0.2 Gate-to-Source Voltage, VGS -- V [FET] VDS=5V f=1kHz 5 --1.0 IT04224 | yfs | -- ID 7 0 --1.2 0.2 | yfs | -- IDSS 100 Forward Transfer Admittance, | yfs | -- mS 0 --1.4 0.2 ITR02752 [FET] VDS=5V VGS=0V f=1kHz 7 5 3 2 10 2 3 5 7 3 1.0 2 3 5 7 2 10 3 5 Drain Current, ID -- mA IT04225 VGS(off) -- IDSS [FET] 7 3 5 Drain Current, IDSS -- mA 2 IT04226 Ciss -- VDS [FET] 10 3 VDS=5V ID=100μA VGS=0V f=1MHz 2 Input Capacitance, Ciss -- pF Cutoff Voltage, VGS(off) -- V 0 1.0 7 5 3 2 10 7 5 3 7 10 2 3 5 Drain Current, IDSS -- mA IT04227 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT04228 No.7177-3/8 CPH5905 Crss -- VDS [FET] VDS=0V f=1MHz 7 3 2 1.0 6 4 2 7 2 1.0 3 5 7 2 10 Drain-to-Source Voltage, VDS -- V 5 7 0.1 2 3 Frequency, f -- kHz 5 7100 ITR02758 PD -- Ta [FET] [FET] VDS=5V ID=1mA f=1kHz 8 6 4 2 400 5 7 1.0 2 3 5 7 10 5 7 1.0 2 3 Signal Source Resistance, Rg -- kΩ 5 71000 ITR02759 IC -- VCE [TR] 50 5 7 10 A 50μ 0μ A 4 2 3 5 7 100 A 400μ 350 M ou 300 nt ed on 250 ac er am ic 200 bo ar 150 d (6 00 m m2 ✕ 100 0. 8m m ) 50 2 3 0 35 200μA 150μA 20 100μA 15 50μA 10 60 80 100 120 50μA 45μA 40μA 35μA 8 30μA 6 25μA 20μA 4 15μA 10μA 2 IB=0μA 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 5μA IB=0μA Collector-to-Emitter Voltage, VCE -- V 1.0 0 5 10 15 20 25 30 35 40 45 Collector-to-Emitter Voltage, VCE -- V ITR10376 IC -- VBE 160 0 0.9 [TR] hFE -- IC 2 VCE=6V 160 IT09866 [TR] 5 0 140 IC -- VCE 10 30 25 40 12 300μA 250μA 40 20 Ambient Temperature, Ta -- °C 350μA 50 45 0 2 3 0 2 3 Collector Current, IC -- mA 0 0.1 2 3 IT04229 NF -- Rg 10 0 0.01 3 Allowable Power Dissipation, PD -- mW 7 Noise Figure, NF -- dB [FET] VDS=5V ID=1mA Rg=1kΩ 8 5 5 Collector Current, IC -- mA NF -- f 10 Noise Figure, NF -- dB Reverse Transfer Capacitance, Crss -- pF 10 50 ITR10377 [TR] VCE=6V 140 DC Current Gain, hFE 100 80 60 Ta=75 °C 25°C --25°C Collector Current, IC -- mA 1000 120 40 20 0.2 0.4 0.6 0.8 5 3 Ta=75°C 2 25°C --25°C 100 7 5 0 0 7 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 1.4 ITR10378 3 0.1 2 3 5 1.0 2 3 5 10 2 3 Collector Current, IC -- mA 5 100 2 3 ITR10379 No.7177-4/8 CPH5905 f T -- IC [TR] VCE=6V 3 3 2 100 7 5 2 10 7 5 3 2 3 1.0 2 3 5 7 2 10 3 5 7 Collector Current, IC -- mA 5 2 100 ITR10380 Cob -- VCB 5 [TR] 10 7 5 3 2 2 1.0 1.0 2 1.0 3 5 7 2 10 3 5 Collector-to-Base Voltage, VCB -- V VBE(sat) -- IC 10 7 100 ITR10382 1.0 7 5 3 2 0.1 5°C Ta=7 °C --25 7 5 2 3 5 7 2 10 25 3 °C 5 7 Collector Current, IC -- mA 2 100 ITR10383 PC -- Ta [TR] 400 IC / IB=10 7 [TR] Collector Dissipation, PC -- mW 350 5 3 2 1.0 Ta= --25°C 7 25°C 75°C 5 3 1.0 7 10 ITR10381 [TR] 2 2 1.0 5 7 5 IC / IB=10 3 7 5 3 VCE(sat) -- IC 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 7 Emitter-to-Base Voltage, VEB -- V f=1MHz 3 Output Capacitance, Cob -- pF [TR] f=1MHz 5 2 1.0 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Cib -- VEB 5 Input Capacitance, Cib -- pF Gain-Bandwidth Product, fT -- MHz 7 M ou 300 nt 250 ed on ac er am ic 200 bo ar 150 d (6 00 m 100 m2 ✕ 0. 8m m ) 50 0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 7 2 100 ITR10384 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT09867 No.7177-5/8 CPH5905 Embossed Taping Specification CPH5905G-TL-E, CPH5905H-TL-E No.7177-6/8 CPH5905 Outline Drawing CPH5905G-TL-E, CPH5905H-TL-E Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No.7177-7/8 CPH5905 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.7177-8/8