CPH6354-TL-W

CPH6354 Power MOSFET –60V, 100mΩ, –4A, Single P-Channel www.onsemi.com Features • • • • ON-resistance RDS(on)1=77mW(typ.) 4V Drive ESD Diode - Protected Gate Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Value Unit Drain-to-Source Voltage VDSS --60 Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID --4 A Drain Current (Pulse) IDP PW≤10ms, duty cycle≤1% Power Dissipation PD When mounted on ceramic substrate (1500mm2×0.8mm) Junction Temperature Tj Storage Temperature Tstg V --16 A 1.6 W 150 °C --55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Thermal Resistance Ratings Parameter Symbol Junction to Ambient When mounted on ceramic substrate (1500mm2×0.8mm) Value RθJA Unit °C/W 78.1 Package Dimensions Product & Package Information unit : mm (typ) 7018A-003 • Package : CPH6 • JEITA, JEDEC : SC-74, SOT-26, SOT-457 • Minimum Packing Quantity : 3,000 pcs./reel 0.15 5 Packing Type: TL Marking 4 LOT No. XE 0.05 1.6 2.8 0.2 0.6 2.9 6 CPH6354-TL-H CPH6354-TL-W 2 0.95 3 0.9 0.2 0.6 TL 1 0.4 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Electrical Connection 1, 2, 5, 6 CPH6 3 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2014 November 2014 - Rev. 2 1 4 Publication Order Number : CPH6354/D CPH6354 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current IGSS Gate Threshold Voltage VGS(th) gFS Forward Transconductance RDS(on)1 Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 Input Capacitance Conditions ID=--1mA, VGS=0V VDS=--60V, VGS=0V VGS=±16V, VDS=0V Value min typ max --60 VDS=--10V, ID=--1mA V --1.2 VDS=--10V, ID=--2A ID=--2A, VGS=--10V --1 mA ±10 mA --2.6 4.8 ID=--1A, VGS=--4.5V ID=--1A, VGS=--4V Ciss Unit V S 77 100 96 135 103 145 mW mW mW 600 pF 60 pF Output Capacitance Coss Reverse Transfer Capacitance Crss 50 pF Turn-ON Delay Time td(on) tr 5.8 ns 12 ns 78 ns Rise Time Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Forward Diode Voltage VSD VDS=--20V, f=1MHz See specified Test Circuit. VDS=--30V, VGS=--10V, ID=--4A IS=--4A, VGS=0V 40 ns 14 nC 1.6 nC 3.4 nC --0.84 --1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 0V --10V VIN VDD= --30V ID= --2A RL=15Ω VIN D PW=10ms D.C.≤1% VOUT G CPH6354 P.G 50Ω S ORDERING INFORMATION Device CPH6354-TL-H CPH6354-TL-W Package Shipping memo CPH6 3,000pcs./reel Pb-Free and Halogen Free www.onsemi.com 2 CPH6354 ID -- VDS --1.0 --0.5 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --2A 160 140 120 100 80 60 40 20 0 --2 --4 --6 --8 --10 --12 --14 7 Source Current, IS -- A = Ta 1.0 5 °C 75 3 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 1A 200 = -, ID 4.5V = -VGS 150 A = --1 V, I D .0 = --4 VGS 100 = VGS 50 --20 0 A = --2 0V, I D --10. 20 40 60 80 100 120 140 160 IT16617 IS -- VSD VGS=0V 3 2 --1.0 7 5 3 2 --0.1 7 5 --0.01 5 7 --10 HD16618 Drain Current, ID -- A --0.2 --0.4 --0.6 --0.8 --1.0 7 5 --1.2 IT16619 Ciss, Coss, Crss -- VDS 1000 td(off) 7 0 Forward Diode Voltage, VSD -- V SW Time -- ID 100 f=1MHz Ciss 5 Ciss, Coss, Crss -- pF tf 3 2 tr 10 td(on) 7 5 3 3 2 100 7 Coss 5 Crss 3 2 1.0 --0.1 --6 IT16615 3 2 2 0.1 --0.01 --5 250 --10 7 5 25 °C Forward Transconductance, gFS -- S C 5° --4 Ambient Temperature, Ta -- °C 3 --2 --3 RDS(on) -- Ta 0 --60 --40 --16 5 2 --2 IT16616 gFS -- ID VDS= --10V --1 300 ID= --1A 180 0 Gate-to-Source Voltage, VGS -- V Ta=25°C Gate-to-Source Voltage, VGS -- V Switching Time, SW Time -- ns 0 --1.0 IT16614 RDS(on) -- VGS 200 7 --2 C 25°C 0 220 10 --3 --1 Drain-to-Source Voltage, VDS -- V 0 --4 Ta=7 5° 0 --5 --25°C --4 . VGS= --2.5V --1.5 --6 Ta=7 5°C 25° --25° C C --2.0 Drain Current, ID -- A --2.5 VDS= --10V --7 --4 . --3.0 --3 5V --16 .0V -10.0V Drain Current, ID -- A --3.5 ID -- VGS --8 .0V 0V --6.0 V --4.0 2 VDD= --30V VGS= --10V 2 3 5 7 --1.0 2 Drain Current, ID -- A 3 5 7 10 --10 0 --10 --20 --30 --40 --50 Drain-to-Source Voltage, VDS -- V IT16620 www.onsemi.com 3 --60 IT16621 CPH6354 VGS -- Qg --10 --9 --8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --100 7 5 3 2 VDS= --30V ID= --4A --7 --6 --5 --4 --3 --2 --1 0 0 2 4 6 8 10 12 14 Total Gate Charge, Qg -- nC op ms 0m ati on s 1m 10 10 er s s (T a= 25 °C ) Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (1500mm2×0.8mm) --0.01 --0.01 2 3 16 0m DC --1.0 7 5 3 2 --0.1 7 5 3 2 10 ID= --4A 5 7--0.1 2 3 5 7--1.0 2 3 5 7--10 2 3 Drain-to-Source Voltage, VDS -- V 5 7--100 HD16623 When mounted on ceramic substrate (1500mm2×0.8mm) 1.6 Power Dissipation, PD -- W IDP= --16A (PW≤10ms) IT16622 PD -- Ta 1.8 --10 7 5 3 2 SOA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 Thermal Resistance, RθJA -- ºC/W Ambient Temperature, Ta -- °C 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 175 HD16624 RθJA -- Pulse Time Duty Cycle=0.5 0.2 0.1 0.05 0.02 0.01 ulse le P Sing 0.01 0.000001 2 When mounted on ceramic substrate (1500mm2×0.8mm) 3 5 70.00001 2 3 5 7 0.0001 2 3 5 7 0.001 2 3 5 7 0.01 Pulse Time, PT -- s www.onsemi.com 4 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 HD141028 CPH6354 Outline Drawing CPH6354-TL-H, CPH6354-TL-W Land Pattern Example Mass (g) Unit 0.015 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 Note on usage : Since the CPH6354 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. www.onsemi.com 5