ESDU3121
12 V Unidirectional ESD and
Surge Protection Device
The ESDU3121 is designed to protect voltage sensitive components
from ESD. Excellent clamping capability, low leakage, high peak
pulse current handling capability and fast response time provide best
in class protection on designs that are exposed to ESD. Because of its
small size, it is suited for use in cellular phones, tablets, MP3 players,
digital cameras and many other portable applications where board
space comes at a premium.
www.onsemi.com
MARKING
DIAGRAM
Features
•
•
•
•
•
Low Clamping Voltage
Low Leakage
Small Body Outline: 1.0 mm x 0.6 mm
Protection for the Following IEC Standards:
IEC61000−4−2 Level 4: ±30 kV Contact Discharge
IEC61000−4−5 (Lightning): 8.5 A (8/20 ms)
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
X2DFN2
CASE 714AB
YK M
YK = Specific Device Code
M = Date Code
1
CATHODE
2
ANODE
Typical Applications
• Power Line Protection
• GPIO Protection
ORDERING INFORMATION
Device
Table 1. MAXIMUM RATINGS
Rating
IEC 61000−4−2 (ESD)
Value
Unit
Contact
Symbol
±30
kV
Air
±30
TJ
−65 to + 150
°C
Storage Temperature Range
TSTG
−65 to + 150
°C
Minimum Peak Pulse Current
IPP
8.5
A
Operating Junction Temperature
Range
ESDU3121MXT5G
Package
Shipping†
X2DFN2
(Pb−Free)
8000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2017
September, 2018 − Rev. 1
1
Publication Order Number:
ESDU3121/D
ESDU3121
Table 2. ELECTRICAL CHARACTERISTICS
I
(TA = 25°C unless otherwise noted)
Symbol
IF
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
VBR
IT
Working Peak Reverse Voltage
VC VBR VRWM
V
IR VF
IT
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
IPP
Uni−Directional Surge Protection
Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Reverse Working Voltage
Breakdown Voltage
Symbol
VRWM
Conditions
Min
Typ
Max
Unit
12
V
14.1
15
15.8
V
0.1
mA
I/O Pin to GND
VBR
IT = 1 mA, I/O Pin to GND
Reverse Leakage Current
IR
@ VRWM, I/O Pin to GND
Reverse Peak Pulse Current
IPP
IEC−61000−4−5 (8x20 ms)
Clamping Voltage 8x20 ms
Waveform per Figure 3
VC
IPP = 8.5 A
20.3
I/O Pin to GND, IEC−61000−4−5 (8x20 ms)
0.70
W
55
pF
Dynamic Resistance
RDYN
Junction Capacitance
CJ
VR = 0 V, f = 1 MHz
8.5
A
22
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
ESDU3121
30
50
20
40
10
VOLTAGE (V)
60
30
20
−10
−20
0
−30
−10
−20
0
20
40
60
80
100
120
−40
−20
140
20
40
60
80
100
120
140
TIME (ns)
TIME (ns)
Figure 1. ESD Clamping Voltage Positive 8 kV
Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Negative 8 kV
Contact per IEC61000−4−2
PEAK VALUE IRSM @ 8 ms
tr
90
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
80
70
60
20
HALF VALUE IRSM/2 @ 20 ms
50
40
30
tP
15
10
5
20
10
0
20
40
t, TIME (ms)
60
0
0
80
50
ITLP (A)
40
30
20
10
1
2
3
4
5
6
7
6
8
10
12
Figure 4. Positive Clamping Voltage vs. Peak
Pulse Current (tp = 8/20 ms)
60
0
4
IPK (A)
Figure 3. 8 x 20 ms Pulse Waveform
0
2
8
9
10
11
18
9
16
8
14
7
12
6
10
5
8
4
6
3
4
2
2
1
00
12
5
10
15
20
VBIAS (V)
VCLTP (V)
Figure 5. Line Capacitance, ƒ = 1MHz
Figure 6. Positive TLP I−V Curve
www.onsemi.com
3
0
25
VIEC (kV)
0
C (pF)
0
25
100
% OF PEAK PULSE CURRENT
0
10
VC @ IPK (V)
VOLTAGE (V)
TYPICAL CHARACTERISTICS
ESDU3121
Transmission Line Pulse (TLP) Measurement
ESD Voltage Clamping
Transmission Line Pulse (TLP) provides current versus
voltage (I−V) curves in which each data point is obtained
from a 100 ns long rectangular pulse from a charged
transmission line. A simplified schematic of a typical TLP
system is shown in Figure 7. TLP I−V curves of ESD
protection devices accurately demonstrate the product’s
ESD capability because the 10s of amps current levels and
under 100 ns time scale match those of an ESD event. This
is illustrated in Figure 8 where an 8 kV IEC 61000−4−2
current waveform is compared with TLP current pulses at
8 A and 16 A. A TLP I−V curve shows the voltage at which
the device turns on as well as how well the device clamps
voltage over a range of current levels. For more information
on TLP measurements and how to interpret them please
refer to AND9007/D.
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
L
S Attenuator
÷
50 W Coax
Cable
10 MW
IM
50 W Coax
Cable
IEC 61000−4−2 Spec.
VM
DUT
VC
Oscilloscope
Level
Test Voltage (kV)
First Peak
Current
(A)
Current at
30 ns (A)
Current at
60 ns (A)
1
2
7.5
4
2
2
4
15
8
4
3
6
22.5
12
6
4
8
30
16
8
Figure 7. Simplified Schematic of a Typical TLP
System
IEC61000−4−2 Waveform
Ipeak
100%
90%
I @ 30 ns
I @ 60 ns
10%
tP = 0.7 ns to 1 ns
Figure 9. IEC61000−4−2 Spec
ESD Gun
Figure 8. Comparison Between 8 kV IEC 61000−4−2
and 8 A and 16 A TLP Waveforms
DUT
50 W
Cable
Oscilloscope
50 W
Figure 10. Diagram of ESD Test Setup
www.onsemi.com
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
X2DFN2 1.0x0.6, 0.65P
CASE 714AB
ISSUE B
DATE 21 NOV 2017
SCALE 8:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. EXPOSED COPPER ALLOWED AS SHOWN.
0.10 C
A B
D
É
PIN 1
INDICATOR
E
DIM
A
A1
b
D
E
e
L
0.05 C
TOP VIEW
A
NOTE 3
0.10 C
0.10 C
A1
C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
SEATING
PLANE
XX M
e
b
e/2
MILLIMETERS
MIN
NOM MAX
0.34
0.37
0.40
−−−
0.03
0.05
0.45
0.50
0.55
0.95
1.00
1.05
0.55
0.60
0.65
0.65 BSC
0.20
0.25
0.30
0.05
M
XX = Specific Device Code
M = Date Code
C A B
RECOMMENDED
SOLDER FOOTPRINT*
1
2X
L
0.05
M
C A B
BOTTOM VIEW
1.20
2X
0.47
2X
0.60
PIN 1
DIMENSIONS: MILLIMETERS
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON98172F
X2DFN2 1.0X0.6, 0.65P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
◊
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative