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FAN48623UC315X

FAN48623UC315X

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    WLCSP16

  • 描述:

    IC REG BOOST PROG 2.5A 16WLCSP

  • 数据手册
  • 价格&库存
FAN48623UC315X 数据手册
DATA SHEET www.onsemi.com Synchronous TINYBOOST) Regulator with Bypass Mode, 2500 mA WLCSP16 1.81 y 1.81 y 0.586 CASE 567QZ FAN48623 Description Features • Maximum Continuous Load Current: 2500 mA at VIN of 2.5 V Boosting VOUT to 3.3 V • Maximum Pulse Load Current of 3.5 A for GSM PAs (1 Slot) and PMIC Support Simultaneously, VIN = 3.1 V, VOUT = 3.4 V • Up to 97% Efficient • 4 External Components: 2520 case 0.47 mH Inductor and 0603 Case Size Input and Output Capacitors • Input Voltage Range: 2.5 V to 5.5 V • Fixed Output Voltage Options: 3.0 V to 5.0 V • True Bypass Operation when VIN > Target VOUT • Integrated Synchronous Rectifier • True Load Disconnect • Forced Bypass Mode • VSEL Control to Optimize Target VOUT • Short−Circuit Protection (SCP) • Low Operating Quiescent Current • 16−Bump, 1.81 mm x 1.81 mm, 0.4 mm Pitch, WLCSP • This is a Pb−Free Device MARKING DIAGRAM 1 xx&K &.&2&Z xx &K &. &2 &Z = Specific Device Code = 2−Digits Lot Run Traceability Code = Pin One Dot = 2−Digit Date Code Format = Assembly Location Battery VIN + L1 The FAN48623 allows systems to take advantage of new battery chemistries that can supply significant energy when the battery voltage is lower than the required voltage for system power ICs. By combining built−in power transistors, synchronous rectification, and low supply current, this IC provides a compact solution for systems using advanced Li−Ion battery chemistries. The FAN48623 is a boost regulator designed to provide a minimum output voltage from a single−cell Li−Ion battery, even when the battery voltage is below system minimum. The output voltage regulation is guaranteed up to a maximum load current of 2500 mA. The regulator transitions smoothly between Bypass and normal Boost Mode. The device can be forced into Bypass Mode to reduce quiescent current. The FAN48623 is available in a 16−bump, 0.4 mm pitch, Wafer−Level Chip−Scale Package (WLCSP). 0.47 mH VOUT CIN 10 mF SW VSEL EN BYP COUT FAN48623 2x22 mF PGND SYSTEM LOAD AGND PG Figure 1. Typical Application ORDERING INFORMATION See detailed ordering and shipping information on page 16 of this data sheet. Applications • Boost for Low−Voltage Li−ion Batteries, Brownout Prevention, System PMIC LDOs Supplies, and 2G/3G/4G RF PA Supplies • Smart Phones, Tablets, Portable Devices © Semiconductor Components Industries, LLC, 2013 April, 2022 − Rev. 3 1 Publication Order Number: FAN48623/D FAN48623 Typical Application Q3B Q3A VIN Q3 CIN L1 BYPASS CONTROL Q1B Q1A SW VOUT Q2 GND COUT Q1 Synchronous Rectifier Control VSEL EN BYP MODULATOR LOGIC AND CONTROL PG Figure 2. Block Diagram Table 1. RECOMMENDED COMPONENTS Component Description Vendor Parameter Typical Value Unit L1 0.47 mH, 20%, 5.3 A, 2520 Toko: DFE252010P−R47M L 0.47 mH DCR (Series R) 27 mW CIN 10 mF, 20%, 10 V, X5R, 0603 TDK: C1608X5R1A106M C 10 mF COUT 2 x 22 mF, 20%, 10 V, X5R, 0603 TDK: C1608X5R1A226M080AC C 44 mF www.onsemi.com 2 FAN48623 Pin Configuration EN PG A1 A2 VSEL NC B1 B2 BYP NC C1 C2 AGND D1 VIN A4 A3 A2 A1 B4 B4 B3 B2 B1 C4 C4 C3 C2 C1 D4 D4 D3 D2 D1 A4 A3 VOUT B3 SW C3 PGND D2 D3 Figure 4. Bottom View (Bumps Up) Figure 3. Top−Through View (Bumps Down) PIN DESCRIPTIONS Pin # Name A1 EN Enable. When this pin is HIGH, the circuit is enabled. Description A2 PG Power Good. This is an open−drain output. PG is actively pulled LOW if output falls out of regulation due to overload or if thermal protection threshold is exceeded. A3, A4 VIN Input Voltage. Connect to Li−Ion battery input power source. B1 VSEL Output Voltage Select. When boost is running, this pin can be used to select the output voltage. B3, B4 VOUT Output Voltage. Place COUT as close as possible to the device. C1 BYP Bypass. This pin can be used to activate Forced Bypass Mode. When this pin is LOW, the bypass switches (Q3 and Q1) are turned on and the IC is otherwise inactive. C3, C4 SW Switching Node. Connect to inductor. D1 AGND Analog Ground. This is the signal ground reference for the IC. All voltage levels are measured with respect to this pin. AGND should be connected to PGND at a single point. D2−D4 PGND Power Ground. This is the power return for the IC. The COUT bypass capacitor should be returned with the shortest path possible to these pins. B2, C2 NC No Internal Connection. Note: Bumps are present and should be tied to PGND. www.onsemi.com 3 FAN48623 ABSOLUTE MAXIMUM RATINGS Symbol VIN Parameter Min Max Unit −0.3 6.5 V − 6.0 V DC −0.3 6.0 V Transient: 10 ns, 3 MHz −1.0 8.0 −0.3 6.5 (Note 1) VIN Input Voltage VOUT VOUT Output Voltage VSW SW Node Voltage Other Pins ESD Electrostatic Discharge Protection Level Human Body Model, ANSI/ESDA/JEDEC JS−001−2012 2.0 Charged Device Model, JESD22−C101 1.5 V kV TJ Junction Temperature −40 +150 °C TSTG Storage Temperature −65 +150 °C − +260 °C TL Lead Soldering Temperature, 10 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Lesser of 6.5 V or VIN + 0.3 V. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit VIN Supply Voltage 2.5 5.5 (Note 2) V IOUT Output Current 0 2500 mA TA Ambient Temperature −40 +85 °C TJ Junction Temperature −40 +125 °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 2. When VIN nears VOUT the part will go into Automatic Bypass, depending on load current. THERMAL CHARACTERISTICS Symbol qJA NOTE: Characteristic Junction−to−Ambient Thermal Resistance Value Unit 60 °C/W Junction−to−ambient thermal resistance is a function of application and board layout. This data is measured with four−layer onsemi evaluation boards (1 oz copper on all layers). Special attention must be paid not to exceed junction temperature TJ(max) at a given ambient temperate TA. www.onsemi.com 4 FAN48623 ELECTRICAL CHARACTERISTICS (Note 3) Unless otherwise noted and per Figure 1 minimum and maximum values are from VIN = 2.5 V to 4.5 V and TA = −40°C to +85°C. Typical values are at VIN = 3.0 V and TA = 25°C for all output voltage options. Symbol IQ Parameter VIN Quiescent Current Min Typ Max Unit Automatic Bypass Mode, VOUT_TARGET = 3.3 V, VIN = 3.6 V Conditions − 140 190 mA Boost Mode, VOUT = 3.3 V, VIN = 3.0 V − 135 180 Shutdown, EN = 0 V, VIN = 3.0 V − 4.0 12.0 Forced Bypass Mode, VIN = 3.6 V − 6.0 12.0 ILK VOUT to VIN Reverse Leakage VOUT = 5.0 V, EN = 0 V, VIN = 0 V − 0.5 1.0 mA ILK_OUT VIN to VOUT Leakage Current VOUT = 0 V, EN = 0 V, VIN = 4.2 V − 0.1 1.5 mA VUVLO Under−Voltage Lockout VIN Rising − 2.20 2.35 V VUVLO_HYS Under−Voltage Lockout Hysteresis − 200 − mV VIH Logic Level High EN, VSEL, BYP 1.05 − − V VIL Logic Level Low EN, VSEL, BYP − − 0.4 V RLOW Logic Control Pin Pull Downs (LOW Active) BYP, VSEL, EN − 300 − kW Weak Current Source Pull−Down BYP, VSEL, EN − 100 − nA Output Voltage Accuracy 2.5 V ≤ VIN ≤ VOUT_TARGET −100 mV, DC, 0 to 2500 mA −1.0 − 4.0 % 2.5 V ≤ VIN ≤ VOUT_TARGET −100 mV, DC, PWM (CCM) Operation −1.0 − 2.5 Boost Valley Current Limit VIN = 2.5 V, VOUT = 3.3 V 4.7 5.3 − A IV_LIM_SS Boost Valley Current Limit During Soft Start VIN = 2.5 V, VOUT = 3.3 V − 2.6 − A tSS Soft−Start EN HIGH to Regulation 50 W Load, VOUT_TARGET = 3.3 V (Time from EN Rising Edge to 90% of VOUT_TARGET) − 300 − ms tRST FAULT Restart Timer − 20 − ms IPD VREG IV_LIM Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Minimum and Maximum limits are verified by design, test, or statistical analysis. Typical (Typ.) numbers are not verified, but represent typical results. www.onsemi.com 5 FAN48623 TYPICAL CHARACTERISTICS 98% 98% 96% 96% 94% 94% Efficiency Efficiency Unless otherwise specified, TA = 25°C; circuit and components according to Figure 1. 92% 90% 2.5 VIN 2.7 VIN 3.0 VIN 88% 86% 0 500 1000 1500 2000 92% 90% −40°C +25°C +85°C 88% 86% 2500 0 500 Load Current (mA) 98% 96% 96% Efficiency Efficiency 94% 92% 90% 88% 82% 2.5 VIN 2.7 VIN 3.0 VIN 0 500 1000 1500 2500 2000 94% 92% 90% −40°C +25°C +85°C 88% 86% 2500 0 500 Load Current (mA) 1000 1500 2000 2500 Load Current (mA) Figure 7. Efficiency vs. Load Current and Input Voltage, VOUT = 3.3 V Figure 8. Efficiency vs. Load Current and Temperature, VIN = 3.0 V, VOUT = 3.3 V 98% 98% 96% 96% 94% 92% Efficiency Efficiency 2000 Figure 6. Efficiency vs. Load Current and Temperature, VIN = 3.0 V, VOUT = 3.15 V 98% 84% 1500 Load Current (mA) Figure 5. Efficiency vs. Load Current and Input Voltage, VOUT = 3.15 V 86% 1000 90% 88% 2.5 2.7 3.0 3.3 86% 84% 82% 0 500 1000 1500 2000 VIN VIN VIN VIN 94% 92% 90% −40°C +25°C +85°C 88% 86% 0 2500 500 1000 1500 2000 2500 Load Current (mA) Load Current (mA) Figure 9. Efficiency vs. Load Current and Input Voltage, VOUT = 3.5 V Figure 10. Efficiency vs. Load Current and Temperature, VIN = 3.0 V, VOUT = 3.5 V www.onsemi.com 6 FAN48623 TYPICAL CHARACTERISTICS (continued) Unless otherwise specified, TA = 25°C; circuit and components according to Figure 1. 96% 96% 94% 94% 90% Efficiency Efficiency 92% 88% 86% 84% 2.5 3.0 3.6 4.2 82% 80% 78% 0 500 1000 1500 2000 92% 90% 88% VIN VIN VIN VIN −40°C +25°C +85°C 86% 84% 2500 0 500 Load Current (mA) Figure 11. Efficiency vs. Load Current and Input Voltage, VOUT = 5.0 V 4.0% 2500 0.0% −40°C +25°C +85°C 3.0% Output Regulation Output Regulation 1.0% 2.0% 1.0% 0.0% −1.0% −1.0% −2.0% 0 500 1000 1500 2000 2500 0 500 1000 1500 4.0% 4.0% Output Regulation 2.5 VIN 2.7 VIN 3.0 VIN 2.0% 2500 Figure 14. Output Regulation vs. Load Current and Temperature, VIN = 3.0 V, VOUT = 3.15 V Figure 13. Output Regulation vs. Load Current and Input Voltage, VOUT = 3.15 V 3.0% 2000 Load Current (mA) Load Current (mA) Output Regulation 2000 4.0% 2.0% −2.0% 1500 Figure 12. Efficiency vs. Load Current and Temperature, VIN = 3.6 V, VOUT = 5.0 V 2.5 VIN 2.7 VIN 3.0 VIN 3.0% 1000 Load Current (mA) 1.0% 0.0% −1.0% −40°C +25°C +85°C 3.0% 2.0% 1.0% 0.0% −1.0% −2.0% 0 500 1000 1500 2000 −2.0% 0 2500 500 1000 1500 2000 2500 Load Current (mA) Load Current (mA) Figure 15. Output Regulation vs. Load Current and Input Voltage, VOUT = 3.3 V Figure 16. Output Regulation vs. Load Current and Temperature, VIN = 3.0 V, VOUT = 3.3 V www.onsemi.com 7 FAN48623 TYPICAL CHARACTERISTICS (continued) Unless otherwise specified, TA = 25°C; circuit and components according to Figure 1. 4.0% Output Regulation 3.0% Output Regulation 4.0% 2.5 VIN 2.7 VIN 3.0 VIN 3.3 VIN 2.0% 1.0% 0.0% −40°C +25°C +85°C 3.0% 2.0% 1.0% 0.0% −1.0% −1.0% −2.0% 0 500 1000 1500 2000 −2.0% 0 2500 500 2.5 3.0 3.6 4.2 3.0% 2.0% 0.0% −1.0% 1000 1500 2000 2.0% 1.0% 0.0% −1.0% −2.0% 2500 0 500 1500 2000 2500 Figure 20. Output Regulation vs. Load Current and Temperature, VIN = 3.6 V, VOUT = 5.0 V Figure 19. Output Regulation vs. Load Current and Input Voltage, VOUT = 5.0 V 220 200 −40°C +25°C +85°C 180 Quiescent Current (mA) Quiescent Current (mA) 1000 Load Current (mA) Load Current (mA) 160 140 120 100 2.5 2500 −40°C +25°C +85°C 3.0% 1.0% 500 2000 4.0% VIN VIN VIN VIN Output Regulation Output Regulation 4.0% 0 1500 Figure 18. Output Regulation vs. Load Current and Temperature, VIN = 3.0 V, VOUT = 3.5 V Figure 17. Output Regulation vs. Load Current and Input Voltage, VOUT = 3.5 V −2.0% 1000 Load Current (mA) Load Current (mA) 3.0 3.5 4.0 180 160 140 120 2.5 4.5 −40°C +25°C +85°C 200 3.0 3.5 4.0 4.5 5.0 5.5 Input Voltage V) Input Voltage V) Figure 22. Quiescent Current vs. Input Voltage and Temperature, VOUT = 5.0 V, Auto Bypass Figure 21. Quiescent Current vs. Input Voltage and Temperature, VOUT = 3.15 V, Auto Bypass www.onsemi.com 8 FAN48623 TYPICAL CHARACTERISTICS (continued) Unless otherwise specified, TA = 25°C; circuit and components according to Figure 1. 5 −40°C +25°C +85°C 10 Max Continuous Load (A) Quiescent Current (mA) 12 8 6 4 2 0 2.5 3.5 3.0 4.0 4.5 4 3.3 VOUT, 25°C 3.3 VOUT, 60°C 3.3 VOUT, 85°C 5.0 VOUT, 25°C 5.0 VOUT, 60°C 5.0 VOUT, 85°C 5.2 VOUT, 25°C 5.2 VOUT, 60°C 5.2 VOUT, 85°C 3.5 3 2.5 2 1.5 1 0.5 0 2.5 4.5 3.0 2,500 Frequency (kHz) Ripple (mV) 40 30 20 10 2.5 VIN 2.7 VIN 3.0 VIN 0 500 1000 1500 2000 2,000 1,500 1,000 2.5 VIN 2.7 VIN 3.0 VIN 500 0 2500 0 500 Load Current (mA) 1000 1500 2000 2500 Load Current (mA) Figure 26. Frequency vs. Load Current and Input Voltage, VOUT = 3.15 V Figure 25. Output Ripple vs. Load Current and Input Voltage, VOUT = 3.15 V 2,500 40 2,000 30 Frequency (kHz) Ripple (mV) 4.5 Figure 24. Typical Maximum Continuous Load vs. Input Voltage, Temperature and Output Voltage Figure 23. Quiescent Current vs. Input Voltage and Temperature, VOUT = 3.3 V, Forced Bypass 20 10 0 4.0 Input Voltage (V) Input Voltage (V) 0 3.5 2.5 VIN 2.7 VIN 3.0 VIN 0 500 1000 1500 2000 1,500 1,000 2.5 VIN 2.7 VIN 3.0 VIN 500 0 2500 0 500 1000 1500 2000 2500 Load Current (mA) Load Current (mA) Figure 27. Output Ripple vs. Load Current and Input Voltage, VOUT = 3.3 V Figure 28. Frequency vs. Load Current and Input Voltage, VOUT = 3.3 V www.onsemi.com 9 FAN48623 TYPICAL CHARACTERISTICS (continued) Unless otherwise specified, TA = 25°C; circuit and components according to Figure 1. 2.5 3.0 3.6 4.2 Ripple (mV) 40 3,000 VIN VIN VIN VIN 2,500 Frequency (kHz) 50 30 2,000 1,000 2.5 VIN 10 500 3.0 VIN 3.6 VIN 0 0 20 4.2 VIN 0 500 1000 1500 2000 2500 0 500 Load Current (mA) 1000 1500 2000 2500 Load Current (mA) Figure 30. Frequency vs. Load Current and Input Voltage, VOUT = 5.0 V Figure 29. Output Ripple vs. Load Current and Input Voltage, VOUT = 5.0 V VOUT (2 V/div) VOUT (1 V/div) IIN (500 mA/div) IIN (500 mA/div) EN (2 V/div) EN (2 V/div) PG (5 V/div) 100 ms/div PG (5 V/div) Figure 31. Startup, 50 W Load, VIN = 2.5 V, VOUT = 3.15 V 100 ms/div Figure 32. Startup, 50 W Load, VIN = 3.0 V, VOUT = 5.0 V VOUT (1 V/div) IL (2 A/div) IL (2 A/div) VOUT (1 V/div) PG (2 V/div) 5 ms/div 50 ms/div PG (2 V/div) Figure 33. Overload Protection, VIN = 3.0 V, VOUT = 5.0 V Figure 34. Output Fault, VIN = 3.0 V, VOUT = 3.3 V www.onsemi.com 10 FAN48623 TYPICAL CHARACTERISTICS (continued) Unless otherwise specified, TA = 25°C; circuit and components according to Figure 1. 3.3 V VOUT (200 mV/div) VOUT (200 mV/div) 5.0 V IOUT (1 A/div) IOUT (1 A/div) 100 ms/div 100 ms/div Figure 35. Load Transient, 150−2000 mA, 10 ms Edge, VIN = 3.0 V, VOUT = 3.3 V Figure 36. Load Transient, 150−1000 mA, 10 ms Edge, VIN = 3.6 V, VOUT = 5.0 V VOUT (50 mV/div) VOUT (200 mV/div) VIN (200 mV/div) 3.2 V 3.0 V 2.7 V VIN (200 mV/div) 20 ms/div 20 ms/div Figure 37. Line Transient, 3.0−3.6 VIN, 10 ms Edge, 500 mA Load, VOUT = 3.3 V Figure 38. Line Transient, 2.7−3.0 VIN, 10 ms Edge, 500 mA Load, VOUT = 3.3 V VOUT (100 mV/div) 3.3 V VSEL (2 V/div) 20 ms/div Figure 39. VSEL Step, VIN = 3 V, VOUT = 3.3 V, 500 mA Load www.onsemi.com 11 FAN48623 CIRCUIT DESCRIPTION FAN48623 is a synchronous boost regulator, typically operating at 2.5 MHz in Continuous Conduction Mode (CCM), which occurs at moderate to heavy load current and low VIN voltages. At light load, the regulator operates at Discontinuous Conduction Mode (DCM) to maintain high efficiency. FAN48623 uses a current−mode modulator to achieve excellent transient response and smooth transitions between CCM and DCM operation. The regulator includes a Bypass Mode that automatically activates when VIN is above the boost regulator’s set point. Soft−Start Mode (SS) Upon successful completion of the LIN Mode (VOUT ≥VIN − 300 mV), SS Mode begins and the regulator starts switching with boost valley current limited to 50% of nominal level at Boost Mode. During SS Mode, VOUT is ramped up by stepping the internal reference. If VOUT fails to reach the voltage required during the SS ramp sequence within 64 ms, a fault state is declare Boost Mode (BST) This is a normal operating state of the regulator. Bypass Mode (BPS) If VIN is above VOUT_TARGET when the SS Mode successfully completes, the device transitions directly to BPS Mode. Table 2. OPERATING STATES Mode Description Invoked When LIN Linear Startup VIN > VOUT SS Soft−Start Mode VIN < VOUT < VOUT_TARGET BST Boost Operating Mode VOUT = VOUT_TARGET BPS Bypass Mode VIN > VOUT_TARGET Table 4. EN AND BYP LOGIC TABLE EN BYP Mode VOUT 0 0 Shutdown 0 Startup and Shutdown (EN Pin) If EN is LOW, all bias circuits are off and the regulator is in Shutdown Mode. During shutdown, current flow is prevented from VIN to VOUT, as well as reverse flow from VOUT to VIN. During startup, keep DC current draw below 500 mA until the device successfully executes startup. It is recommended not to connect EN directly to VIN but use a GPIO voltage of 1.8 V to set the logic for the EN pin. The following table describes the startup sequence. 1 LIN1 LIN2 SS Exit VIN > VUVLO, EN = 1 VOUT > VIN − 300 mV SS TIMEOUT LIN2 LIN1 Exit VOUT > VIN − 300 mV SS TIMEOUT FAULT VOUT = VOUT_TARGET BST LIN1 or LIN2 Exit 0 Forced Bypass VIN 1 Auto Bypass VOUT_TARGET or VIN (if VIN > VOUT_TARGET) The regulator enters the FAULT state under any of the following conditions: • VOUT fails to achieve the voltage required to advance from LIN state to SS state. • VOUT fails to achieve the voltage required to advance from SS state to BST state. • Boost valley current limit triggers for 2 ms during the BST state. • VIN to VOUT voltage drop exceeds 160 mV during BPS state. • VIN < VUVLO If a fault is triggered, the regulator stops switching and presents a high−impedance path between VIN and VOUT. After waiting 20 ms, an automatic restart is attempted. End Timeout Mode (ms) Entry Shutdown 0 FAULT State Table 3. BOOST STARTUP SEQUENCE Start Mode 1 512 1024 Linear Startup (LIN) When EN is HIGH and VIN > VUVLO, the regulator attempts to bring VOUT within 300 mV of VIN using the internal fixed current source from VIN (Q3). The current is limited to the LIN1 (~1 A) set point. If VOUT reaches VIN−300 mV during LIN1 Mode, SS Mode is initiated. Otherwise, LIN1 times out after 512 ms and LIN2 Mode is entered. In LIN2 Mode, the current source is incremented to approximately 2 A. If VOUT fails to reach VIN−300 mV after 1024 ms, a fault state is declared. Power Good Power good is defined as a 0−FAULT, 1−POWER GOOD, open−drain output. The Power Good pin (PG) signals when the regulator has successfully completed soft−start with no faults occurring. Power Good also functions as a warning flag for high die temperature. • PG is released HIGH when the soft−start sequence is successfully completed. • Any FAULT state causes PG to be de−asserted. www.onsemi.com 12 FAN48623 • PG is not asserted during Forced Bypass exit to Boost hysteresis imposed at VOUT to prevent cycling between modes. The corresponding input voltage at the transition point is: Mode until the soft−start sequence is successfully completed. Over−Temperature ǒ Ǔ V IN v V OUT ) I LOAD @ DCR L ) R DS(ON)P ø R DS(ON)BYP * 50 mV When the die temperature exceeds 125°C, PG de−asserts (eq. 1) and the output remains regulated. PG is re−asserted when the device cools by approximately 20°C. The regulator shuts down if the die temperature exceeds 150°C. Restart occurs when the IC has cooled by approximately 20°C. The Bypass Mode entry threshold has a 30 mV hysteresis imposed at VOUT to prevent cycling between modes. The transition from Boost Mode to Bypass Mode occurs at the target VOUT + 30 mV. The corresponding input voltage is: ǒ Automatic Bypass Ǔ V IN v V OUT ) I LOAD @ DCR L ) R DS(ON)P ) 30 mV In normal operation, the device automatically transitions from Boost Mode to Bypass Mode if VIN goes above VOUT_TARGET. In Bypass Mode, the device fully enhances both Q1 and Q3 to provide a very low impedance path from VIN to VOUT. Entry into the Bypass Mode is triggered when VIN > VOUT_TARGET and no switching has occurred during the past 10 ms. To soften the entry into Bypass Mode, Q3 is driven as a linear current source for the first 5 ms. Bypass Mode exit is triggered when VOUT reaches VOUT_TARGET. During Automatic Bypass Mode, the device is short−circuit protected by voltage comparator tracking the voltage drop from VIN to VOUT; if the drop exceeds 160 mV, a fault state is declared. With sufficient load to enforce CCM operation, the Bypass Mode to Boost Mode transition occurs at the target VOUT. The Bypass Mode exit threshold has a 50 mV (eq. 2) Forced Bypass Forced Bypass Mode is activated by pulling BYP pin LOW. Forced Bypass Mode initiates with a current limit on Q3 and then proceeds to the Bypass Mode with both Q1 and Q3 fully enhanced. To prevent reverse current to the battery, the device waits until output discharges below VIN before entering Forced Bypass Mode. After the transition is complete, most of the internal circuitry is disabled to minimize quiescent current. OCP, UVLO and OTP are inactive in Forced Bypass Mode. By pulling BYP pin HIGH, the part transitions from Forced Bypass Mode to Boost Mode. During the transition, Q1 is off and Q3 is driven as a linear current source for the first 5 ms before entering Boost Mode. www.onsemi.com 13 FAN48623 APPLICATION INFORMATION Output Capacitance (COUT) current ripple to become higher under high loading as only the valley of the inductor current ripple is controlled. Stability The effective capacitance (CEFF − Note 4) of small, high−value, ceramic capacitors decrease as bias voltage increases, as illustrated in Figure 40. Startup Inrush Current Limit Input current limiting is in effect during soft−start, which limits the current available to charge COUT and any additional capacitance on the VOUT line. If the output fails to achieve regulation within the set limit, a FAULT occurs, causing the circuit to shut down then restart after 20 ms. If the total combined output capacitance is very high, the circuit may not start on the first attempt, but eventually achieves regulation if no load is present. If a high−current load and high capacitance are both present during soft−start, the circuit may fail to achieve regulation and continually attempts soft−start, only to have the output capacitance discharged by the load when in a FAULT state. 24 Capacitance (mF) 20 16 12 8 4 Output Voltage Ripple Output voltage ripple is inversely proportional to COUT. During tON, when the boost switch is on, all load current is supplied by COUT. Output ripple is calculated as: 0 0 1 2 3 4 5 6 7 8 9 10 DC Bias (V) Figure 40. CEFF for 22 mF, 0603, X5R, 10 V−Rated Capacitor (TDK C1608X5R1A226M080AC) V RIPPLE(P*P) + t ON @ and Stable operation is guaranteed with the minimum value of CEFF (CEFF(MIN)), as outlined in Table 5. therefore: Operating Conditions ILOAD (mA) CEFF(MIN) (mF) 3.15 0 to 2500 9 5.0 0 to 2500 6 ǒ t ON + t SW @ D + t SW @ 1 * Table 5. MINIMUM CEFF REQUIRED FOR STABILITY VOUT (V) I LOAD C OUT ǒ V RIPPLE(P*P) + t SW @ 1 * (eq. 3) V IN V OUT V IN V OUT Ǔ @ Ǔ (eq. 4) I LOAD C OUT (eq. 5) and t SW + 4. CEFF varies with manufacturer, material, and case size. 1 f SW (eq. 6) As can be seen from Equation 5, the maximum VRIPPLE occurs when VIN is at minimum and ILOAD is at maximum. Inductor Selection Recommended nominal inductance value is 0.47 mH. The FAN48623 employs valley−current limiting. Peak inductor current can reach 6.5 A for a short duration during overload conditions. Saturation effects cause the inductor Voltage at VOUT For applications where a foreign voltage source could be applied at VOUT, care should be taken to ensure VOUT never exceeds the Absolute Maximum Rating. LAYOUT RECOMMENDATIONS The layout recommendations below highlight various layers using different colors. To minimize spikes at VOUT, COUT must be placed as close as possible to PGND and VOUT, as shown in Figure 41. For thermal reasons, it is suggested to maximize the pour area for all planes other than SW. Especially the ground pour should be set to fill all available PCB surface area and tied to internal layers with a cluster of thermal vias. Figure 41. Layout Recommendation www.onsemi.com 14 FAN48623 Refer to the section below for detailed layout recommendations for each layer. VIN trace should go through CIN before going to VIN pins. VOUT trace should be as wide and as short as possible, for low impedance. Connect AGND directly to GND layer through a via. The ground area should be made as large as possible to help dissipate heat. Put as many as possible vias connected to ground plane (layer 2), to help dissipate heat. Figure 42. Top Layer • Layer 2 should be a solid ground layer, to shield VOUT from capacitive coupling of the fast edges of SW node. • Logic signals can be routed on this layer. Figure 43. Layer 2 SW trace should be as wide and as short as possible, and be isolated with GND area from any other sensitive traces. Figure 44. Layer 3 www.onsemi.com 15 FAN48623 ORDERING INFORMATION Part Number Output Voltage VSEL0/VSEL1 (Note 5) Operating Temperature FAN48623UC315X 3.150 / 3.330 −40°C to 85°C FAN48623UC32JX 3.20 / 3.413 FAN48623UC33X 3.300 / 3.489 JE FAN48623UC35X 3.5 / 3.7 JF FAN48623UC36FX 3.64 / 3.709 JG FAN48623UC50X 5.000 / 5.286 JL FAN48623UC50GX 5000 / 5.190 JM Package Shipping† Device Marking 16−Ball, 4x4 Array, 0.4 mm Pitch, 250 mm Ball, Wafer−Level Chip−Scale Package (WLCSP) 3000 / Tape & Reel JK JD †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 5. Other output voltages are available on request. Please contact a onsemi representative. PRODUCT−SPECIFIC DIMENSIONS Product D E X Y FAN48623UC315X 1.810 ±0.030 1.810 ±0.030 0.305 0.305 FAN48623UC32JX 1.810 ±0.030 1.810 ±0.030 0.305 0.305 FAN48623UC33X 1.810 ±0.030 1.810 ±0.030 0.305 0.305 FAN48623UC35X 1.810 ±0.030 1.810 ±0.030 0.305 0.305 FAN48623UC36FX 1.810 ±0.030 1.810 ±0.030 0.305 0.305 FAN48623UC50X 1.810 ±0.030 1.810 ±0.030 0.305 0.305 FAN48623UC50GX 1.810 ±0.030 1.810 ±0.030 0.305 0.305 TINYBOOST is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. www.onsemi.com 16 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WLCSP16 1.81x1.81x0.586 CASE 567QZ ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13358G WLCSP16 1.81x1.81x0.586 DATE 31 OCT 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative
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