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FAN48630BUC33X

FAN48630BUC33X

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    16-UFBGA,WLCSP

  • 描述:

    IC REG BOOST PROG 1.5A 16WLCSP

  • 数据手册
  • 价格&库存
FAN48630BUC33X 数据手册
Synchronous Regulator with Bypass Mode, TINYBOOST®, 2.5 MHz, 1500 mA FAN48630 www.onsemi.com Description Features • Few External Components: 0.47 mH Inductor and 0603 Case Size • • • • • • • • • • • • • Input and Output Capacitors Input Voltage Range: 2.35 V to 5.5 V Fixed Output Voltage Options: 3.0 V to 5.0 V Maximum Continuous Load Current: 1500 mA at VIN of 2.6 V Boosting VOUT to 3.5 V Up to 96% Efficient True Bypass Operation when VIN > VOUT_TARGET Internal Synchronous Rectifier Soft−Start with True Load Disconnect Forced Bypass Mode VSEL Control to Optimize Target VOUT Short−Circuit Protection Low Operating Quiescent Current 16−Bump, 0.4 mm Pitch WLCSP These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant WLCSP16 1.78x1.78x0.586 CASE 567SY MARKING DIAGRAM 1 Pin−1 Mark 12 KK X Y Z 2 K K X Y Z = Alphanumeric Device Marking = Lot Rune Code = Alphabetical Year Code = 2−weeks Date Code = Assembly Plant Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Battery VIN + VOUT CIN L1 The FAN48630 allows systems to take advantage of new battery chemistries that can supply significant energy when the battery voltage is lower than the required voltage for system power ICs. By combining built−in power transistors, synchronous rectification, and low supply current; this IC provides a compact solution for systems using advanced Li−Ion battery chemistries. The FAN48630 is a boost regulator designed to provide a minimum output voltage from a single−cell Li−Ion battery, even when the battery voltage is below system minimum. Output voltage regulation is guaranteed to a maximum load current of 1500 mA. Quiescent current in Shutdown Mode is less than 3 mA, which maximizes battery life. The regulator transitions smoothly between Bypass and normal Boost Mode. The device can be forced into Bypass Mode to reduce quiescent current. The FAN48630 is available in a 16−bump, 0.4 mm pitch, Wafer−Level Chip−Scale Package (WLCSP). 0.47 mH COUT 20 mF PGND 4.7mF SW VSEL SYSTEM LO AD FAN48630 AGND EN BYP PG Figure 1. Typical Application Applications • Boost for Low−Voltage Li−ion Batteries, Brownout Prevention, Boosted Audio, USB OTG, and LTE / 3G RF Power • Cell Phones, Smart Phones, Portable Instruments © Semiconductor Components Industries, LLC, 2015 October, 2019 − Rev. 2 1 Publication Order Number: FAN48630/D FAN48630 Table 1. ORDERING INFORMATION Part Number Output Voltage (Note 1) VSELO/VSEL1 Soft − Start Forced Bypass Operating Temperature FAN48630UC315X 3.15 / 3.33 FAST Low IQ −40 to 85°C FAN48630BUC315X (Note 2) 3.15 / 3.33 FAST Low IQ FAN48630UC33X 3.30 / 3.49 FAST Low IQ FAN48630BUC33X (Note 2) 3.30 / 3.49 FAST Low IQ JX FAN48630BUC34X (Note 2) 3.20 / 3.40 FAST Low IQ JR FAN48630UC35X 3.50 / 3.70 FAST Low IQ J6 FAN48630UC37AX 3.70 / 3.77 FAST Low IQ JT FAN48630UC45X 4.50 / 4.76 SLOW OCP On J7 FAN48630UC50X 5.00 / 5.29 SLOW OCP On J8 Package Shipping† 16−Ball, 4x4 Array, Tape & Reel 0.4mm Pitch, 250um Ball, Wafer−Level Chip−Scale Package (WLCSP) Top Marking J5 J5 JX †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1. Other output voltages are available on request. Please contact a ON Semiconductor representative. 2. The FAN48630BUC315X, FAN48630BUC33X and FAN48630BUC34X include backside lamination. TYPICAL APPLICATION Q3B Q3A VIN CIN Q3 L1 Bypass Control Q1B Q1A SW VOUT Q2 GND COUT Q1 Synchronous Rectifier Control VSEL EN BYP Modulator Logic and Control PG Figure 2. Block Diagram www.onsemi.com 2 FAN48630 Table 2. RECOMMENDED COMPONENTS Component Description Vendor Parameter Typ. Unit L1 0.47 mH, 30% Toko: DFE201612C DFR201612C Cyntec: PIFE20161B L 0.47 mH DCR (Series R) 40 mW CIN 4.7 mF, 10%, 6.3 V, X5R, 0603 Murata: GRM188R60J475K TDK: C1608X5R0J475K C 4.7 mF COUT 2 x 10 mF, 20%, 10 V, X5R, 0603 TDK: C1608X5R1A106M C 20 mF PIN CONFIGURATION EN PG A1 A2 VSEL AGND B1 VIN B3 C2 C3 A2 A1 B4 B4 B3 B2 B1 C4 C4 C3 C2 C1 D4 D4 D3 D2 D1 SW AGND D1 A3 VOUT B2 BYP C1 A4 A4 A3 PGND D2 D3 Figure 3. Top Through View (Bumps Down) Figure 4. Bottom View Table 3. PIN DEFINITIONS Pin # Name A1 EN Enable. When this pin is HIGH, the circuit is enabled (Note 3). A2 PG Power Good. This is an open−drain output. PG is actively pulled LOW if output falls out of regulation due to overload or if thermal protection threshold is exceeded. A3–A4 VIN Input Voltage. Connect to Li−Ion battery input power source (Note 3). B1 VSEL Output Voltage Select. When boost is running, this pin can be used to select output voltage. B2, C2, D1 AGND Analog Ground. This is the signal ground reference for the IC. All voltage levels are measured with respect to this pin. B3–B4 VOUT Output Voltage. Place COUT as close as possible to the device. C1 BYP Bypass. This pin can be used to activate Forced Bypass Mode. When this pin is LOW, the bypass switches (Q3 and Q1) are turned on and the IC is otherwise inactive. C3–C4 SW Switching Node. Connect to inductor. D2–D4 PGND Description Power Ground. This is the power return for the IC. The COUT bypass capacitor should be returned with the shortest path possible to these pins. 3. Do not connect the EN pin to VIN. A logic voltage of 1.8 V should control the EN pin and enable/disable the device. www.onsemi.com 3 FAN48630 Table 4. ABSOLUTE MAXIMUM RATINGS Symbol Parameter VIN VIN Input Voltage VOUT Min. Max. Unit −0.3 6.5 V VOUT Output Voltage SW Node 6.0 V DC −0.3 8.0 V Transient: 10 ns, 3 MHz −1.0 8.0 V 6.5 V Other Pins −0.3 (Note 4) ESD Electrostatic Discharge Protection Level Human Body Model per JESD22−A114 3.0 Charged Device Model per JESD22−C101 kV 1.5 kV TJ Junction Temperature −40 +150 °C TSTG Storage Temperature −65 +150 °C +260 °C TL Lead Soldering Temperature, 10 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 4. Lesser of 6.5 V or VIN + 0.3 V. Table 5. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min. Max. Unit VIN Supply Voltage 2.35 5.5 V IOUT Output Current 0 1500 mA TA Ambient Temperature −40 +85 °C TJ Junction Temperature −40 +125 °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. Table 6. THERMAL CHARACTERISTICS Symbol Typ. Unit θJA Junction−to−Ambient Thermal Resistance Parameter 80 °C/W θJB Junction−to−Board Thermal Resistance 42 Junction−to−ambient thermal resistance is a function of application and board layout. This data is measured with four−layer Fairchild® evaluation boards (1 oz copper on all layers). Special attention must be paid not to exceed junction temperature TJ(max) at a given ambient temperate TA. Table 7. ELECTRICAL CHARACTERISTICS Recommended operating conditions, unless otherwise noted, circuit per Figure 1, VIN = 2.35 V to VOUT, TA = −40°C to 85°C. Typical values are given VIN = 3.0 V and TA = 25°C. Parameter Symbol IQ V IN Quiescent Current Typ. Max. Unit Bypass Mode VOUT = 3.5 V, VIN = 4.2 V Condition 140 190 μA Boost Mode VOUT = 3.5 V, VIN = 2.5 V 150 250 μA Shutdown: EN = 0, VIN = 3.0 V 1.5 5.0 μA Low IQ 4 10 μA OCP On 45 90 μA 0.2 1.0 μA Forced Bypass Mode VOUT = 3.5 V VIN = 3.5 V ILK Min. VOUT to VIN Reverse Leakage VOUT = 5 V, EN = 0 ILK_OUT VOUT Leakage Current VOUT = 0, EN = 0, VIN = 4.2 V 0.1 1.0 μA VUVLO Under−Voltage Lockout VIN Rising 2.20 2.35 V VUVLO_HYS Under−Voltage Lockout Hysteresis 200 VPG(OL) PG Low IPG = 5 mA IPG_LK PG Leakage Current VPG = 5 V VIH Logic Level High EN, VSEL, BYP VIL Logic Level Low EN, VSEL, BYP mV 0.4 V 1 μA 1.2 V 0.4 www.onsemi.com 4 V FAN48630 Table 7. ELECTRICAL CHARACTERISTICS (continued) Recommended operating conditions, unless otherwise noted, circuit per Figure 1, VIN = 2.35 V to VOUT, TA = −40°C to 85°C. Typical values are given VIN = 3.0 V and TA = 25°C. Symbol RLOW IPD Parameter Condition Logic Control Pin Pull Downs (LOW Active) BYP, VSEL, EN Min. Typ. Max. Unit kΩ 300 Weak Current Source Pull−Down BYP, VSEL, EN VREG Output Voltage Accuracy Referred to GND, DC, VOUT−VIN > 100 mV VTRSP Load Transient Response 500–1250 mA, VIN = 3.6 V, VOUT = 5.0 V ±4 % tON On−Time VIN = 3.0 V, VOUT = 3.5 V, Load > 1000 mA 80 ns fSW Switching Frequency VIN = 3.6 V, VOUT = 5.0 V, Load = 1000 mA 2.0 2.5 3.0 MHz 2.6 2.9 3.1 A IV_LIM 100 –2 nA 4 % Boost Valley Current Limit VIN = 2.6 V IV_LIM_SS Boost Valley Current Limit During SS VIN = 2.6 V 1.6 A VMIN_1.5A Minimum VIN for 1500 mA Load (Short Term) VOUT = 5.0 V, TJ < 120°C 3.0 V VOUT = 4.5 V, TJ < 120°C 2.8 V VOUT = 3.5 V, TJ < 120°C 2.35 V VOUT = 3.15 V, TJ < 120°C 2.35 V LIN1 Slow 350 mA Fast 800 mA Slow 700 mA Fast 1600 mA Slow, 50 Ω Load 1300 μs Fast, 50 Ω Load 600 μs VIN = 5.0 V, VIN − VOUT 200 ISS_PK Soft−Start Input Peak Current Limit LIN2 tSS Soft−Start EN HIGH to Regulation VOCP OCP Comparator Threshold VOVP Output Over−Voltage Protection Threshold 6.0 VOVP_HYS Output Over−Voltage Protection Hysteresis 300 RDS(ON)N N−Channel Boost Switch RDS(ON) VIN = 3.5 V, VOUT = 3.5 V 85 120 mW RDS(ON)P P−Channel Sync Rectifier RDS(ON) VIN = 3.5 V, VOUT = 3.5 V 65 85 mW VIN = 3.5 V, VOUT = 3.5 V 65 85 mW RDS(ON)P_BYP P−Channel Bypass Switch RDS(ON) mV 6.3 V mV T120A T120 Activation Threshold 120 °C T120R T120 Release Threshold 100 °C T150T T150 Threshold 150 °C T150H T150 Hysteresis 20 °C FAULT Restart Timer 20 ms tRST Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 5 FAN48630 TYPICAL CHARACTERISTICS Unless otherwise specified; VIN = 3.6 V, VOUT = 5 V, and TA = 25°C; circuit and components according to Figure 1. 100% 96% 94% 92% Efficiency Efficiency 96% 92% 88% 2.5 VIN 3.0 VIN 84% 90% 88% 86% 84% 3.3 VIN −40C 82% 4.2 VIN +25C +85C 80% 80% 0 250 500 750 1000 1250 0 1500 250 500 750 1000 1250 1500 Load Current (mA) Load Current (mA) Figure 5. Efficiency vs. Load Current and Input Voltage, VOUT = 3.5 V Figure 6. Efficiency vs. Load Current and Temperature, VIN = 3.0 V, VOUT = 3.5 V 96% 96% 92% 92% Efficiency Efficiency 88% 84% 88% 84% 80% 2.5 VIN 3.0 VIN 76% −40C 80% 3.6 VIN +25C 4.2 VIN 72% 0 250 500 750 1000 1250 +85C 76% 1500 0 250 500 750 1000 1250 Load Current (mA) Load Current (mA) Figure 7. Efficiency vs. Load Current and Input Voltage Figure 8. Efficiency vs. Load Current and Temperature 1500 100% 100% 96% 96% Efficiency Efficiency 92% 92% 88% 88% 84% 5.0 VOUT 4.5 VOUT 3.5 VOUT 5.0 VOUT 84% 4.5 VOUT 80% 3.5 VOUT 3.15 VOUT 3.15 VOUT 80% 2.0 2.5 3.0 3.5 4.0 76% 2.0 4.5 Input Voltage (V) 2.5 3.0 3.5 4.0 Input Voltage (V) Figure 9. Efficiency vs. Input Voltage and Output Voltage, 200 mA Load Figure 10. Efficiency vs. Input Voltage and Output Voltage, 1000 mA Load www.onsemi.com 6 4.5 FAN48630 3 3 2 2 Output Regulation (%) Output Regulation (%) TYPICAL CHARACTERISTICS (CONTINUED) Unless otherwise specified; VIN = 3.6 V, VOUT = 5 V, and TA = 25°C; circuit and components according to Figure 1. 1 0 2.5 VIN 3.0 VIN −1 1 0 −40C −1 3.6 VIN +25C 4.2 VIN −2 0 250 500 750 1000 1250 +85C −2 1500 0 250 Load Current (mA) 1250 1500 −40C Auto +25C Auto +85C Auto −40C Bypass +25C Bypass +85C Bypass 200 Input Current ( Input Current ( 250 150 100 50 150 100 50 0 0 2.0 2.5 3.0 3.5 4.0 4.5 2.0 2.5 Input Voltage (V) 50 2,500 Switching Frequency (KHz) 3,000 40 30 20 2.5 VIN 3.0 VIN 10 3.6 VIN 4.2 VIN 0 250 500 750 3.5 4.0 4.5 Figure 14. Quiescent Current vs. Input Voltage, Temperature and Mode, VOUT = 3.5 V, Forced Bypass, Low IQ 60 0 3.0 Input Voltage (V) Figure 13. Quiescent Current vs. Input Voltage, Temperature and Mode, VOUT = 5.0 V, Forced Bypass, OCP Active Output Ripple (mVpp) 1000 Figure 12. Output Regulation vs. Load Current and Temperature (Normalized to 3.6 VIN, 500 mA Load, TA = 255C) −40C Auto +25C Auto +85C Auto −40C Bypass +25C Bypass +85C Bypass 200 750 Load Current (mA) Figure 11. Output Regulation vs. Load Current and Input Voltage (Normalized to 3.6 VIN, 500 mA Load) 250 500 1000 1250 2,000 1,500 1,000 2.5 VIN 3.0 VIN 500 3.6 VIN 4.2 VIN 0 1500 0 Load Current (mA) 250 500 750 1000 1250 Load Current (mA) Figure 15. Output Ripple vs. Load Current and Input Voltage Figure 16. Frequency vs. Load Current and Input Voltage www.onsemi.com 7 1500 FAN48630 TYPICAL CHARACTERISTICS (CONTINUED) Unless otherwise specified; VIN = 3.6 V, VOUT = 5 V, and TA = 25°C; circuit and components according to Figure 1. Figure 17. Startup, 50  Load Figure 18. Startup, 50  Load, VIN = 2.5 V, VOUT = 3.5 V Figure 20. Load Transient, 100−500 mA, 100 ns Edge Figure 19. Overload Protection Figure 21. Load Transient, 500−1250 mA, 100 ns Edge Figure 22. Load Transient, 100−500 mA, 100 ns Edge, VIN = 3 V, VOUT = 3.5 V www.onsemi.com 8 FAN48630 TYPICAL CHARACTERISTICS (CONTINUED) Unless otherwise specified; VIN = 3.6 V, VOUT = 5 V, and TA = 25°C; circuit and components according to Figure 1. Figure 23. Transient Overload, 500−1950 mA, 100 ns Edge, VIN = 3 V, VOUT = 3.5 V Figure 24. Line Transient, 3.0−3.6 VIN, 10 s Edge, 500 mA Load, VOUT = 3.15 V Figure 25. Line Transient, 3.0−3.6 VIN, 10 s Edge, 1,000 mA Load, VOUT = 3.5 V Figure 26. Line Transient, 3.3−3.9 VIN, 10 s Edge, 500 mA load, VOUT = 3.5 V Figure 27. Bypass Entry / Exit, Slow VIN Ramp 1 ms Edge, 500 mA Load, VOUT = 3.5 V, 3.2 − 3.8 VIN Figure 28. VSEL Step, VIN = 3 V, VOUT = 3.5 V, 500 mA Load www.onsemi.com 9 FAN48630 CIRCUIT DESCRIPTION internal fixed current source from VIN (Q3). The current is limited to LIN1 set point. If VOUT reaches VIN−300 mV during LIN1 Mode, the SS state is initiated. Otherwise, LIN1 times out after 512 ms and LIN2 Mode is entered. In LIN2 Mode, the current source is incremented to 2 A. If VOUT fails to reach VIN−300 mV after 1024 ms, a fault condition is declared. FAN48630 is a synchronous boost regulator, typically operating at 2.5 MHz in Continuous Conduction Mode (CCM), which occurs at moderate to heavy load current and low VIN voltages. The regulator includes a Bypass Mode that activates when VIN is above the boost regulator’s setpoint. In anticipation of a heavy load transition, the setpoint can be adjusted upward by fixed amounts with the VSEL pin to reduce the required system headroom during lighter−load operation to save power. SS State Upon the successful completion of the LIN state (VOUT ≥ VIN−300 mV), the regulator begins switching with boost pulses current limited to 50% of nominal level. During SS state, VOUT is ramped up by stepping the internal reference. If VOUT fails to reach regulation during the SS ramp sequence for more than 64 ms, a fault condition is declared. If large COUT is used, the reference is automatically stepped slower to avoid excessive input current draw. Table 8. OPERATING STATES Mode Description Invoked When LIN Linear Startup VIN > VOUT SS Boost Soft−Start VOUT < VOUT_TARGET BST Boost Operating Mode VOUT = VOUT_TARGET BPS Bypass Mode VIN > VOUT_TARGET BST State This is a normal operating state of the regulator. Boost Mode The FAN48630 uses a current−mode modulator to achieve excellent transient response and smooth transitions between CCM and Discontinuous Conduction Mode (DCM) operation. During CCM operation, the device maintains a switching frequency of about 2.5 MHz. In light−load operation (DCM), frequency is reduced to maintain high efficiency. BPS State If VIN is above VREG when the SS Mode successfully completes, the device transitions directly to BPS Mode. FAST and SLOW Soft−Start Options The fast startup versions feature EN to regulation time of 600 ms. LIN1 and LIN2 phase currents are doubled compared to SLOW options, SS phase is also faster. Slow startup achieves EN to regulation time of 1300 ms to reduce inrush current. Table 9. BOOST STARTUP SEQUENCE Start State LIN1 Entry Exit End State VIN > UVLO, EN = 1 VOUT > VIN−300 mV SS LIN2 LIN2 SS LIN1 Exit LIN1 or LIN2 Exit VOUT > VIN−300 mV SS TIMEOUT FAULT VOUT = VOUT_TARGET BST OVERLOAD TIMEOUT FAULT Timeout (s) Table 10. OPERATING STATES 512 EN BYP Mode VOUT 0 0 Shutdown 0 1 Shutdown 0 0 Forced Bypass VIN Auto Bypass VOUT_TARGET or VIN (or VIN > VOUT_TARGET 1 1024 1 FAULT State 64 The regulator enters the FAULT state under any of the following conditions: • VOUT fails to achieve the voltage required to advance from LIN state to SS state. • VOUT fails to achieve the voltage required to advance from SS state to BST state. • Boost current limit triggers for 2 ms during the BST state. • VDS protection threshold is exceeded during BPS state. Shutdown and Startup If EN is LOW, all bias circuits are off and the regulator is in Shutdown Mode. During shutdown, current flow is prevented from VIN to VOUT, as well as reverse flow from VOUT to VIN. During startup, it is recommended to keep DC current draw below 500 mA. LIN State When EN is HIGH and VIN > UVLO, the regulator attempts to bring VOUT within 300 mV of VIN using the www.onsemi.com 10 FAN48630 • PG is released HIGH when the soft−start sequence is Once a fault is triggered, the regulator stops switching and presents a high−impedance path between VIN and VOUT. After waiting 20 ms, a restart is attempted. • Power Good Power good is 0 FAULT, 1 POWER GOOD, open−drain output. The Power good pin is provided for signaling the system when the regulator has successfully completed soft−start and no faults have occurred. Power good also functions as an early warning flag for high die temperature and overload conditions. • Forced Bypass Entry to Forced Bypass Mode initiates with a current limit on Q3 and then proceeds to a true bypass state. To prevent reverse current to the battery, the device waits until output discharges below VIN before entering Forced Bypass Mode. For Low−IQ Forced Bypass versions, after the transition is complete, most of the internal circuitry is disabled to minimize quiescent current draw. Short−circuit, UVLO, output OVP and over−temperature protections are inactive in Forced Bypass Mode. For OCP−On Forced Bypass versions, during Forced Bypass Mode, the device is short−circuit protected by a voltage comparator tracking the voltage drop from VIN to VOUT. If the drop exceeds 200 mV, a FAULT is declared. The over−temperature protection is also active. Over−Temperature The regulator shuts down when the die temperature exceeds 150°C. Restart occurs when the IC has cooled by approximately 20°C. Bypass Operation In normal operation, the device automatically transitions from Boost Mode to Bypass Mode, if VIN goes above target VOUT. In Bypass Mode, the device fully enhances both Q1 and Q3 to provide a very low impedance path from VIN to VOUT. Entry to the Bypass Mode is triggered by condition where VIN > VOUT and no switching has occurred during past 5 ms. To soften the entry to Bypass Mode, Q3 is driven as a linear current source for the first 5 ms. Bypass Mode exit is triggered when VOUT reaches the target VOUT voltage. During Automatic Bypass Mode, the device is short−circuit protected by voltage comparator tracking the voltage drop from VIN to VOUT; if the drop exceeds 200 mV, FAULT is declared. With sufficient load to enforce CCM operation, the Bypass Mode to Boost Mode transition occurs at the target VOUT. The corresponding input voltage at the transition point is: V IN v V OUT ) I LOAD * (DCR L ) R DS(ON)P)ŦR DS(ON)BYP successfully completed. PG is pulled LOW when PMOS current limit has triggered for 64 ms OR the die the temperature exceeds 120°C. PG is re−asserted when the device cools below to 100°C. Any FAULT condition causes PG to be de−asserted. VSEL VSEL can be asserted in anticipation of a positive load transient. Raising VSEL increases VOUT_TARGET by a fixed amount and VOUT is stepped to the corresponding target output voltage in 20 ms. The functionality can also be utilized to mitigate undershoot during severe line transients, while minimizing VOUT during more benign operating conditions to save power. EN Setting the EN pin voltage below 0.4 V disables the part. Placing the voltage above 1.2 V enables the part. Do not connect the EN pin to VIN. A logic voltage of 1.8 V should control the EN pin and enable / disable the device. The EN pin should be pulled HIGH after the VIN voltage has reached a minimum voltage of 2.3 V. (eq. 1) The Bypass Mode entry threshold has 25 mV hysteresis imposed at VOUT to prevent cycling between modes. The transition from Boost Mode to Bypass Mode occurs at the target VOUT+25 mV. The corresponding input voltage is: V IN w V OUT ) 25mV ) I LOAD * (DCR L ) R DS(ON)P) (eq. 2) www.onsemi.com 11 FAN48630 APPLICATION INFORMATION Output Capacitance (COUT) Output Voltage Ripple Output voltage ripple is inversely proportional to COUT. During tON, when the boost switch is on, all load current is supplied by COUT. Output ripple is calculated as: Stability The effective capacitance (CEFF) of small, high−value, ceramic capacitors decreases as bias voltage increases. FAN48630 is guaranteed for stable operation with the minimum value of CEFF (CEFF(MIN)) outlined in Table 11 below. V RIPPLE(P*P) + t ON * and ǒ t ON + t SW * D + t SW * 1 * Table 11. MINIMUM CEFF REQUIRED FOR STABILITY Operating Conditions therefore: VOUT (V) ILOAD (mA) CEFF(MIN) (F 3.15 0 to 1500 12 3.5 0 to 1500 9 4.5 and 5 0 to 1500 6 I LOAD C OUT ǒ V RIPPLE(P*P) + t SW * 1 * (eq. 3) V IN V OUT Ǔ Ǔ I LOAD V IN * V OUT C OUT (eq. 4) (eq. 5) and t SW + CEFF varies with manufacturer, material, and case size. 1 f SW (eq. 6) As can be seen from eq. 5, the maximum VRIPPLE occurs when VIN is at minimum and ILOAD is at maximum. Inductor Selection Recommended nominal inductance value is 0.47 mH. FAN48630 employs valley−current limiting; peak inductor current can reach 3.8 A for a short duration during overload conditions. Saturation effects cause the inductor current ripple to become higher under high loading as only valley of the inductor current ripple is controlled. For FAN48630UC315X, FAN48630BUC315X, FAN48630UC33X and FAN48630BUC33X, a 0.33 mH inductor can be used for improved transient performance. Layout Recommendations The layout recommendations below highlight various top−copper pours using different colors. To minimize spikes at VOUT, COUT must be placed as close as possible to PGND and VOUT, as shown in Figure 29. For thermal reasons, it is suggested to maximize the pour area for all planes other than SW. Especially the ground pour should be set to fill all available PCB surface area and tied to internal layers with a cluster of thermal vias. Startup Input current limiting is in effect during soft−start, which limits the current available to charge COUT and any additional capacitance on the VOUT line. If the output fails to achieve regulation within the limits described in the Startup section, a FAULT occurs, causing the circuit to shut down then restart after a significant time period. If the total combined output capacitance is very high, the circuit may not start on the first attempt, but eventually achieves regulation if no load is present. If a high−current load and high capacitance are both present during soft−start, the circuit may fail to achieve regulation and continually attempts soft−start, only to have the output capacitance discharged by the load when in a FAULT state. Figure 29. Layout Recommendation Table 12. PRODUCT−SPECIFIC DIMENSIONS D E X Y 1.780 ±0.030 1.780 ±0.030 0.290 0.290 TINYBOOST is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. FAIRCHILD is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 12 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WLCSP16 1.78x1.78x0.586 CASE 567SY ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON16621G WLCSP16 1.78x1.78x0.586 DATE 30 NOV 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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