FCP130N60

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FCP130N60 N- 沟道 SuperFET® II MOSFET 600 V, 28 A, 130 mΩ 特性 描述 • 650 V @ TJ = 150 °C SuperFET® II MOSFET 是飞兆利用电荷平衡技术实现出色的低 导通电阻和更低栅极电荷性能的全新高压超级结 (SJ) MOSFET 系列产品。这项先进技术专用于最小化传导损耗，提供卓越的开 关性能，并能够承受极端 dv/dt 额定值和更高雪崩能量。因此， SuperFET II MOSFET 适用于系统小型化和高效化的各种各样的 AC-DC 功率转换的应用中。 • 典型值 RDS(on) = 112 mΩ • 超低栅极电荷 （典型值 Qg=54 nC） • 低有效输出电容 （典型值 Coss(eff.)= 240 pF） • 100% 经过雪崩测试 • 符合 RoHS 标准 应用 • 通信 / 服务器电源 • 工业电源 D GD S G TO-220 S 最大绝对额定值 TC = 25 °C 除非另有说明。 符号 漏极－源极电压 VGSS 栅极－源极电压 ID 漏极电流 IDM 漏极电流 EAS IAR EAR dv/dt FCP130N60 600 参数 VDSS - DC ±20 - AC (f > 1 Hz) - 连续 （TC = 25 °C） 28 - 连续 （TC = 100 °C） 18 V A （注 1） 84 A 单脉冲雪崩能量 （注 2） 720 mJ 雪崩电流 （注 1） 6 A 重复雪崩能量 MOSFET dv/dt （注 1） 2.78 mJ 二极管恢复 dv/dt 峰值 （注 3） - 脉冲 100 20 V/ns (TC = 25 °C) 278 W - 高于 25 °C 的功耗系数 2.2 W/°C -55 至 +150 300 °C FCP130N60 单位 PD 功耗 TJ, TSTG 工作和存储温度范围 用于焊接的最大引脚温度，距离外壳 1/8”，持续 5 秒 TL ±30 单位 V °C 热性能 符号 参数 RθJC 结至外壳热阻最大值 0.45 RθJA 结至环境热阻最大值 40 © 2014 飞兆半导体公司 FCP130N60 Rev. C1 1 °C/W www.fairchildsemi.com FCP130N60 — N- 沟道 SuperFET® II MOSFET 2015 年 3 月 器件编号 FCP130N60 顶标 FCP130N60 封装 TO-220 包装方法 塑料管 卷尺寸 不适用 带宽 不适用 数量 50 个 电气特性 TC = 25 °C 除非另有说明。 符号 参数 测试条件 最小值 典型值 最大值 VGS = 0 V, ID = 10 mA, TJ = 25 °C 600 - - VGS = 0 V, ID = 10 mA, TJ = 150 °C 650 - - - 0.67 - 单位 关断特性 BVDSS 漏极－源极击穿电压 ΔBVDSS / ΔTJ 击穿电压温度系数 IDSS 零栅极电压漏极电流 IGSS ID = 10 mA，参考 25 °C 数值 V V/°C VDS = 600 V, VGS = 0 V - - 1 VDS = 480 V, VGS = 0 V, TC = 125 °C - 1.3 - 栅极－体漏电流 VGS = ±20 V, VDS = 0 V - - ±100 VGS(th) RDS(on) 栅极阈值电压 VGS = VDS, ID = 250 μA 2.5 - 3.5 V 漏极至源极静态导通电阻 VGS = 10 V, ID = 14 A - 112 130 mΩ gFS 正向跨导 VDS = 20 V, ID = 14 A - 26 - S VDS = 380 V, VGS = 0 V, f = 1 MHz - 2700 3590 pF - 65 85 pF - 2.85 - pF μA nA 导通特性 动态特性 Ciss 输入电容 Coss 输出电容 Crss 反向传输电容 Coss(eff.) 有效输出电容 VDS = 0 V 至 480 V, VGS = 0 V - 240 - pF VDS = 380 V, ID = 14 A, VGS = 10 V - 54 70 nC - 12 - nC - 14 - nC - 1 - Ω - 25 60 ns - 16 42 ns - 65 140 ns - 4 18 ns Qg(tot) 10 V 的栅极电荷总量 Qgs 栅极－源极栅极电荷 Qgd 栅极－漏极 “ 米勒 ” 电荷 ESR 等效串联电阻 （注 4） f = 1 MHz 开关特性 td(on) 导通延迟时间 tr 导通上升时间 td(off) 关断延迟时间 tf 关断下降时间 VDD = 380 V, ID = 14 A, VGS = 10 V, Rg = 4.7 Ω （注 4） 漏极－源极二极管特性 IS 漏极－源极二极管最大正向连续电流 - - 28 A ISM 漏极－源极二极管最大正向脉冲电流 - - 84 A VSD 漏极－源极二极管正向电压 VGS = 0 V, ISD = 14 A - - 1.2 V trr 反向恢复时间 - 376 - ns Qrr 反向恢复电荷 VGS = 0 V, ISD = 14 A, dIF/dt = 100 A/μs - 7.6 - μC 注： 1. 重复额定值：脉冲宽度受限于最大结温。 2. IAS = 6 A， VDD = 50 V， RG = 25 Ω，开始于 TJ = 25 °C。 3. ISD ≤ 14 A， di/dt ≤ 200 A/μs， VDD ≤ BVDSS，开始于 TJ = 25 °C。 4. 典型特性本质上独立于工作温度。 © 2014 飞兆半导体公司 FCP130N60 Rev. C1 2 www.fairchildsemi.com FCP130N60 — N- 沟道 SuperFET® II MOSFET 封装标识与定购信息 图 1. 导通区域特性 图 2. 传输特性 200 100 *Notes: 1. VDS = 20V 2. 250μs Pulse Test ID, Drain Current[A] ID, Drain Current[A] 100 10 VGS = 10.0V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 1 0.3 1 10 VDS, Drain-Source Voltage[V] o 150 C o o -55 C 1 20 25 C 10 2 图 3. 导通电阻变化与 漏极电流和栅极电压的关系 0.30 200 100 o IS, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 0.25 0.20 VGS = 10V VGS = 20V 0.10 0 30 60 ID, Drain Current [A] *Notes: 1. VGS = 0V 2. 250μs Pulse Test 10 o 150 C 1 o 25 C 0.1 0.01 0.001 0.0 90 图 5. 电容特性 Capacitances [pF] VGS, Gate-Source Voltage [V] 10 Ciss 1000 Coss 100 *Note: 1. VGS = 0V 2. f = 1MHz 10 1 Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 0.1 -1 10 © 2014 飞兆半导体公司 FCP130N60 Rev. C1 0 1 0.3 0.6 0.9 1.2 VSD, Body Diode Forward Voltage [V] 1.5 图 6. 栅极电荷特性 100000 10000 7 图 4. 体二极管正向电压 变化与源极电流和温度的关系 *Note: TC = 25 C 0.15 3 4 5 6 VGS, Gate-Source Voltage[V] 2 10 10 10 VDS, Drain-Source Voltage [V] 3 VDS = 120V 8 VDS = 300V 6 VDS = 480V 4 2 0 600 *Note: ID = 14A 0 12 24 36 48 Qg, Total Gate Charge [nC] 60 www.fairchildsemi.com FCP130N60 — N- 沟道 SuperFET® II MOSFET 典型性能特征 图 7. 击穿电压变化与温度的关系 图 8. 导通电阻变化与温度的关系 2.5 *Notes: 1. VGS = 0V 2. ID = 10mA RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] *Notes: 1. VGS = 10V 2. ID = 14A 2.0 1.5 1.0 0.5 -100 200 图 9. 最大安全工作区 200 图 10. 最大漏极电流与壳温的关系 200 35 100 10μs 28 100μs 10 ID, Drain Current [A] ID, Drain Current [A] -50 0 50 100 150 o TJ, Junction Temperature [ C] 1ms Operation in This Area is Limited by R DS(on) DC 1 *Notes: o 1. TC = 25 C 21 14 7 o 0.1 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 图 11. Eoss 与漏源极电压的关系 15 EOSS, [μJ] 12 9 6 3 0 0 © 2014 飞兆半导体公司 FCP130N60 Rev. C1 120 240 360 480 VDS, Drain to Source Voltage [V] 600 4 www.fairchildsemi.com FCP130N60 — N- 沟道 SuperFET® II MOSFET 典型性能特征 （接上页） FCP130N60 — N- 沟道 SuperFET® II MOSFET 典型性能特征 （接上页） 图 12. 瞬态热响应曲线 o ZθJC(t), Thermal Response [ C/W] 1 0.5 0.1 0.2 0.1 0.01 t1 0.02 0.01 *Notes: Single pulse 0.001 -5 10 © 2014 飞兆半导体公司 FCP130N60 Rev. C1 PDM 0.05 t2 o 1. ZθJC(t) = 0.45 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 -2 10 10 t1, Rectangular Pulse Duration [sec] 5 -1 10 1 www.fairchildsemi.com FCP130N60 — N- 沟道 SuperFET® II MOSFET 图 13. 栅极电荷测试电路与波形 图 14. 阻性开关测试电路与波形 图 15. 非箝位电感开关测试电路与波形 © 2014 飞兆半导体公司 FCP130N60 Rev. C1 6 www.fairchildsemi.com FCP130N60 — N- 沟道 SuperFET® II MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop 图 16. 二极管恢复 dv/dt 峰值测试电路与波形 © 2014 飞兆半导体公司 FCP130N60 Rev. C1 7 www.fairchildsemi.com SUPPLIER "B" PACKAGE SHAPE 3.50 10.67 9.65 E SUPPLIER "A" PACKAGE SHAPE 3.40 2.50 16.30 13.90 IF PRESENT, SEE NOTE "D" 16.51 15.42 E 9.40 8.13 E 1 [2.46] 2 3 C 4.10 2.70 14.04 12.70 2.13 2.06 FRONT VIEWS 4.70 4.00 1.62 H 1.42 "A1" 8.65 7.59 SEE NOTE "F" 1.62 1.10 2.67 2.40 1.00 0.55 6.69 6.06 OPTIONAL CHAMFER E 14.30 11.50 NOTE "I" BOTTOM VIEW 3 0.60 0.36 SIDE VIEW 2.85 2.10 2 1 BACK VIEW NOTES: A) REFERENCE JEDEC, TO-220, VARIATION AB B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS COMMON TO ALL PACKAGE SUPPLIERS EXCEPT WHERE NOTED [ ]. D) LOCATION OF MOLDED FEATURE MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE) E DOES NOT COMPLY JEDEC STANDARD VALUE. F) "A1" DIMENSIONS AS BELOW: SINGLE GAUGE = 0.51 - 0.61 DUAL GAUGE = 1.10 - 1.45 G) DRAWING FILE NAME: TO220B03REV9 H PRESENCE IS SUPPLIER DEPENDENT I) SUPPLIER DEPENDENT MOLD LOCKING HOLES IN HEATSINK. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com